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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP10250E-GE3

Name: SUP10250E-GE3
Brand: Vishay Siliconix
SKU: SUP10250E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP10250E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP10250E-GE3.pdf

Description:: MOSFET N-CH 250V 63A TO220AB

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Product details

Overview

SUP10250E-GE3 from Vishay Siliconix is an N-channel 250 V, 63 A (T_C = 25 °C), TO-220AB power MOSFET optimized for high-efficiency switch-mode power supplies and synchronous rectification, featuring R_DS(on) = 0.0315 Ω at V_GS = 10 V, 175 °C maximum junction temperature, and 57.6 nC total gate charge.

For engineers reviewing the SUP10250E-GE3 datasheet, SUP10250E-GE3 pinout, SUP10250E-GE3 application, or SUP10250E-GE3 equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit (FOM), robust avalanche rating (E_AS = 180 mJ), and suitability for high-voltage DC/DC converters, solar microinverters, and Class D audio amplifiers requiring thermally stable switching performance.

Technical Context

This device employs a planar silicon process with ThunderFET® optimization to minimize conduction and switching losses simultaneously. Its gate threshold voltage (V_GS(th) = 2–4 V) enables reliable enhancement-mode operation with standard 10 V gate drivers, while the 1.5–5 Ω gate resistance supports controlled turn-on/turn-off timing in hard-switched topologies.

The MOSFET's SOA is defined up to 100 μs pulse width with derating per curve, and its body diode exhibits t_rr = 212–420 ns and Q_rr = 1.6–3.2 μC - critical parameters for synchronous rectification efficiency and EMI management in high-frequency converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - supports primary-side switching in 200–240 VAC offline SMPS and 400 VDC bus applications
R_DS(on) max	0.0315 Ω at V_GS = 10 V - enables <1.9 W conduction loss at 63 A, reducing heatsink requirements
I_D continuous	63 A at T_C = 25 °C - rated for high-current output stages in UPS and industrial DC/DC converters
Q_g typ	57.6 nC - balances switching speed and driver loss; supports 100–500 kHz operation with moderate gate drive strength
E_AS	180 mJ - withstands single-pulse inductive energy without failure, enhancing reliability in motor drive and inverter designs
T_J max	+175 °C - allows operation in high-ambient environments (e.g., enclosed solar inverters or industrial enclosures)
R_thJC	0.4 °C/W - enables efficient heat transfer to external heatsink, critical for sustained high-power operation

Pinout & Package

Package: TO-220AB - through-hole, single-ended, isolated tab (drain-connected), with standardized 2.54 mm lead pitch and heatsink-mounting hole per Vishay drawing 5471.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path collector	Internally connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits
Source (S)	Current return path and reference node	Common return for gate drive and load; defines local ground for gate-source control loop
Gate (G)	Control electrode	High-impedance input requiring low-inductance routing; sensitive to ringing due to 1.5–5 Ω internal R_g

Key Features

Feature	Design Value
ThunderFET® optimization	Minimizes R_DS(on) × C_oss FOM for reduced switching loss in high-frequency hard-switched converters
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and guarantees unclamped inductive switching capability
Body diode with low Q_rr	Q_rr = 1.6–3.2 μC enables efficient synchronous rectification with reduced reverse recovery loss and EMI
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc# 99912
Maximum 175 °C junction temperature	Supports extended thermal margin in sealed or high-ambient industrial and renewable energy systems

Applications

Uninterruptible Power Supplies (UPS)	Solar Microinverters
Use Scenario: High-efficiency DC/AC inversion stage with bidirectional energy flow and fast transient response. IC Role / Device Role / Timing Role: Primary high-side switching MOSFET in full-bridge or H-bridge inverter leg, handling 250 V DC bus and 50–60 Hz AC output. Use Value: Low R_DS(on) minimizes conduction loss during high-current half-cycles; 175 °C rating sustains operation under battery backup thermal stress.	Use Scenario: Module-level DC/AC conversion in photovoltaic arrays exposed to outdoor ambient extremes. IC Role / Device Role / Timing Role: High-voltage switching element in interleaved flyback or LLC resonant inverter topology. Use Value: Robust avalanche capability (E_AS = 180 mJ) absorbs line transients; TO-220AB package enables direct heatsink mounting on aluminum enclosure.
Class D Audio Amplifiers	Industrial Motor Drives
Use Scenario: Output stage in high-fidelity, high-power audio amplifiers requiring low distortion and thermal stability. IC Role / Device Role / Timing Role: Half-bridge high-side and low-side switching device operating at 300–500 kHz carrier frequency. Use Value: Tight V_GS(th) tolerance (2–4 V) ensures matched turn-on across paralleled devices; low C_iss/C_rss ratio improves PWM fidelity and reduces shoot-through risk.	Use Scenario: Inverter output stage driving 3-phase BLDC or induction motors in HVAC and pump systems. IC Role / Device Role / Timing Role: IGBT replacement in 200–250 V DC bus motor control modules, used in high-side and low-side positions. Use Value: 150 A pulsed drain current (I_DM) handles motor startup surges; 0.4 °C/W R_thJC supports forced-air cooling in compact drives.

Uninterruptible Power Supplies (UPS)

Solar Microinverters

Use Scenario: High-efficiency DC/AC inversion stage with bidirectional energy flow and fast transient response.

IC Role / Device Role / Timing Role: Primary high-side switching MOSFET in full-bridge or H-bridge inverter leg, handling 250 V DC bus and 50–60 Hz AC output.

Use Value: Low R_DS(on) minimizes conduction loss during high-current half-cycles; 175 °C rating sustains operation under battery backup thermal stress.

Use Scenario: Module-level DC/AC conversion in photovoltaic arrays exposed to outdoor ambient extremes.

IC Role / Device Role / Timing Role: High-voltage switching element in interleaved flyback or LLC resonant inverter topology.

Use Value: Robust avalanche capability (E_AS = 180 mJ) absorbs line transients; TO-220AB package enables direct heatsink mounting on aluminum enclosure.

Class D Audio Amplifiers

Industrial Motor Drives

Use Scenario: Output stage in high-fidelity, high-power audio amplifiers requiring low distortion and thermal stability.

IC Role / Device Role / Timing Role: Half-bridge high-side and low-side switching device operating at 300–500 kHz carrier frequency.

Use Value: Tight V_GS(th) tolerance (2–4 V) ensures matched turn-on across paralleled devices; low C_iss/C_rss ratio improves PWM fidelity and reduces shoot-through risk.

Use Scenario: Inverter output stage driving 3-phase BLDC or induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: IGBT replacement in 200–250 V DC bus motor control modules, used in high-side and low-side positions.

Use Value: 150 A pulsed drain current (I_DM) handles motor startup surges; 0.4 °C/W R_thJC supports forced-air cooling in compact drives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50FP	500 V V_DS, higher R_DS(on) (0.22 Ω), TO-220FP package (isolated tab)	Better suited for 400 VDC bus designs but less efficient at 250 V due to higher conduction loss	Select when higher voltage margin is required and lower switching frequency (<100 kHz) allows higher R_DS(on) penalty
IXTH50N20P	200 V V_DS, lower R_DS(on) (0.022 Ω), TO-247 package, no integrated gate resistor	Optimized for 100–200 V systems; unsuitable for 250 V applications due to breakdown limit	Choose only for 200 V nominal bus designs where ultra-low R_DS(on) justifies larger TO-247 footprint and higher cost

Compared with STP20NM50FP and IXTH50N20P, SUP10250E-GE3 uniquely balances 250 V rating, sub-32 mΩ R_DS(on), and TO-220AB thermal performance - making it optimal for 200–250 V applications demanding both efficiency and ruggedness without over-specifying voltage or package size.

Availability

SUP10250E-GE3 is available at Aetrix Electronics and suitable for uninterruptible power supplies, solar microinverters, and Class D audio amplifiers requiring stable component supply, long-term lifecycle support, and consistent Pb-free/halogen-free compliance.

Supply support for SUP10250E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and thermally robust solutions.

The SUP10250E-GE3 belongs to Vishay's ThunderFET® power MOSFET family, engineered specifically for high-voltage, high-current switch-mode power conversion where low R_DS(on) × Q_g FOM and rugged avalanche performance are critical.

FAQ

What is the maximum continuous drain current rating for SUP10250E-GE3 at 70 °C case temperature?

The SUP10250E-GE3 has a continuous drain current rating of 36.3 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation within its 0.4 °C/W junction-to-case thermal resistance. Designers must verify heatsink interface and ambient conditions to maintain T_C ≤ 70 °C for this current level. The SUP10250E-GE3 datasheet confirms this value under "Continuous Drain Current (T_J = 150 °C)" conditions.

Does SUP10250E-GE3 have an integrated gate resistor, and what is its typical value?

Yes, SUP10250E-GE3 includes an integrated gate resistor with a typical value of 3.1 Ω (range 1.5–5 Ω), measured at 1 MHz per the datasheet's Dynamic specifications. This built-in R_g helps dampen gate oscillation and simplifies PCB layout by reducing external component count. It is factory-trimmed and 100 % tested, contributing to consistent switching behavior across units. The SUP10250E-GE3 specification sheet explicitly lists this parameter under "Gate Resistance" in Table 2.

Can SUP10250E-GE3 be used in synchronous rectification applications, and what body diode parameters support this?

Yes, SUP10250E-GE3 is suitable for synchronous rectification due to its optimized body diode characteristics: forward voltage V_SD = 0.79–1.2 V at I_F = 10 A, reverse recovery time t_rr = 212–420 ns, and reverse recovery charge Q_rr = 1.6–3.2 μC. These values enable efficient commutation with minimal reverse recovery loss and EMI generation. The SUP10250E-GE3 datasheet confirms these parameters in the "Drain-Source Body Diode Ratings and Characteristics" section.

What is the Safe Operating Area (SOA) limitation for SUP10250E-GE3 at 10 ms pulse width?

At 10 ms pulse width, the SUP10250E-GE3 SOA is limited by R_DS(on) conduction (not avalanche or breakdown), supporting up to ~40 A at 100 V V_DS per the SOA graph on page 5 of the datasheet. This reflects thermal constraints of the TO-220AB package under transient conditions. Operation beyond this boundary risks thermal runaway or bond-wire failure. The SUP10250E-GE3 SOA curve explicitly shows the 10 ms boundary intersecting the R_DS(on)-limited region.

Is SUP10250E-GE3 pin-compatible with other TO-220AB N-channel MOSFETs, and what mechanical details confirm this?

Yes, SUP10250E-GE3 uses the industry-standard TO-220AB outline per Vishay package drawing 5471, with 2.54 mm lead pitch, 15.17 mm D dimension (max), and drain-connected metal tab - matching JEDEC TO-220AB mechanical specifications. Pin order (G-D-S, top view) and mounting hole location are identical across compliant parts. The SUP10250E-GE3 package documentation confirms full mechanical compatibility with standard TO-220AB footprints and heatsinks.

SUP10250E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: ThunderFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 88 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP10250E-GE3 FAQ

1.How can I place an order for SUP10250E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP10250E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP10250E-GE3 reliable?

The price and inventory of SUP10250E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP10250E-GE3 is usually 5 days.

3.What payment methods are accepted for SUP10250E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP10250E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP10250E-GE3?

SUP10250E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP10250E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP10250E-GE3?

For technical support, including SUP10250E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP10250E-GE3 requirements.

6.How does Aetrix verify that SUP10250E-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP10250E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP10250E-GE3 meets industry standards.

7.What is the process for return or replacement of SUP10250E-GE3?

All SUP10250E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP10250E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP10250E-GE3 part is unused and in its original packaging.

Return procedure for SUP10250E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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