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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP25P10-138-GE3

Name: SUP25P10-138-GE3
Brand: Vishay Siliconix
SKU: SUP25P10-138-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP25P10-138-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP25P10-138-GE3.pdf

Description:: MOSFET N-CH 100V 16.3A TO220AB

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Product details

Overview

SUP25P10-138-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -100 V drain-source voltage, 0.138 Ω maximum R_DS(on) at V_GS = -10 V, and -16.3 A continuous drain current at T_C = 25 °C. It features 24 nC typical total gate charge, 1.7 °C/W junction-to-case thermal resistance, and is optimized for high-efficiency DC/DC converters and motor control switches where low conduction loss and robust avalanche capability are required.

For engineers reviewing the SUP25P10-138-GE3 datasheet, SUP25P10-138-GE3 pinout, SUP25P10-138-GE3 application, or SUP25P10-138-GE3 equivalent, this device's verified -100 V rating, TO-220AB package with drain-connected tab, gate-threshold range of -2 V to -4 V, and 31.25 mJ single-pulse avalanche energy are critical selection criteria in power-switching designs requiring ruggedness and thermal stability.

Technical Context

This MOSFET employs Vishay's TrenchFET® process to achieve low R_DS(on) while maintaining high breakdown voltage and controlled gate charge. Its negative V_GS(th) (-2 to -4 V) enables direct logic-level drive from standard -5 V or -10 V controllers without level-shifting circuitry.

The device integrates a source-drain diode with -0.85 V to -1.5 V forward voltage at -5 A and exhibits 70–105 ns reverse recovery time. Its safe operating area (SOA) is defined up to 100 µs pulse width with voltage derating above 25 °C case temperature, and it supports pulsed drain currents up to -40 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Maximum blocking voltage before avalanche onset; defines upper limit for DC bus or flyback clamp applications.
R_DS(on) max	0.138 Ω at V_GS = -10 V - Determines conduction loss at full load; yields ~14.5 W I²R loss at -16.3 A.
I_D continuous	-16.3 A at T_C = 25 °C - Thermal-limited current with heatsink; derates to -7.3 A at T_C = 125 °C.
Q_g typ	24 nC at V_GS = -6 V - Governs gate drive power and switching speed; enables efficient operation at 100–500 kHz.
E_AS	31.25 mJ - Single-pulse avalanche energy rating; ensures reliability during inductive turn-off transients.
R_thJC	1.7 °C/W - Junction-to-case thermal resistance; allows accurate junction temperature estimation when mounted on heatsink.
V_GS(th)	-2 V to -4 V - Gate threshold range; confirms reliable turn-on with -5 V logic or microcontroller outputs.

Pinout & Package

Package: TO-220AB, lead (Pb)-free and halogen-free, drain connected to metal tab for direct heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; requires -10 V for full enhancement; gate resistance 2–16 Ω affects switching speed and ringing.
D	Drain	Main high-side current path; electrically tied to metal tab; must be isolated from heatsink unless system ground referenced.
S	Source	Reference node for gate drive; connects to load return or ground; source-drain diode conducts reverse current during freewheeling.

Key Features

Feature	Design Value
TrenchFET® Power MOSFET architecture	Enables lower R_DS(on) per die area than planar MOSFETs, improving power density in space-constrained converters.
100 % R_g and UIS tested	Each unit undergoes gate resistance screening and unclamped inductive switching validation, ensuring production consistency and ruggedness.
Drain-connected tab in TO-220AB	Provides low-thermal-resistance path to heatsink (R_thJC = 1.7 °C/W), enabling high-power dissipation without additional thermal interface layers.
Source-drain diode with 70–105 ns t_rr	Supports synchronous rectification or freewheeling in buck/bridge topologies with predictable recovery behavior and low Q_rr (220–330 nC).
Lead (Pb)-free and halogen-free construction	Meets JEDEC JS709A and RoHS Directive 2011/65/EU requirements for environmentally compliant industrial and automotive systems.

Applications

DC/DC Buck Converter	Brushed DC Motor H-Bridge
Use Scenario: High-efficiency 24–48 V input to 5–12 V output step-down converter in industrial PLC power supplies. IC Role / Device Role / Timing Role: High-side synchronous switch controlling power delivery; operates in hard-switched PWM mode at 250 kHz. Use Value: Low 0.138 Ω R_DS(on) minimizes conduction loss at 15 A load; 24 nC Q_g enables fast turn-on with minimal gate driver power.	Use Scenario: Bidirectional 24 V brushed motor drive in automated gate actuators with regenerative braking. IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration; handles continuous 12 A stall current and 40 A peak pulses. Use Value: -100 V rating withstands back-EMF spikes; 31.25 mJ E_AS absorbs inductive energy during rapid direction reversal.
AC-DC Auxiliary Supply	Hot-Swap OR-ing Circuit
Use Scenario: Secondary-side synchronous rectifier in offline flyback adapter supplying 12 V/3 A to control logic. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal. Use Value: Source-drain diode V_SD = -0.85 V reduces forward drop vs. 0.5 V Schottky; low Q_rr prevents cross-conduction losses.	Use Scenario: Redundant 48 V power rail OR-ing in telecom shelf with automatic fault isolation. IC Role / Device Role / Timing Role: Back-to-back configured P-channel MOSFET providing reverse-current blocking and low-loss conduction. Use Value: Negative V_GS(th) allows simple gate bias from rail; -16.3 A rating supports >20 A parallel configurations with margin.

DC/DC Buck Converter

Brushed DC Motor H-Bridge

Use Scenario: High-efficiency 24–48 V input to 5–12 V output step-down converter in industrial PLC power supplies.

IC Role / Device Role / Timing Role: High-side synchronous switch controlling power delivery; operates in hard-switched PWM mode at 250 kHz.

Use Value: Low 0.138 Ω R_DS(on) minimizes conduction loss at 15 A load; 24 nC Q_g enables fast turn-on with minimal gate driver power.

Use Scenario: Bidirectional 24 V brushed motor drive in automated gate actuators with regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration; handles continuous 12 A stall current and 40 A peak pulses.

Use Value: -100 V rating withstands back-EMF spikes; 31.25 mJ E_AS absorbs inductive energy during rapid direction reversal.

AC-DC Auxiliary Supply

Hot-Swap OR-ing Circuit

Use Scenario: Secondary-side synchronous rectifier in offline flyback adapter supplying 12 V/3 A to control logic.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal.

Use Value: Source-drain diode V_SD = -0.85 V reduces forward drop vs. 0.5 V Schottky; low Q_rr prevents cross-conduction losses.

Use Scenario: Redundant 48 V power rail OR-ing in telecom shelf with automatic fault isolation.

IC Role / Device Role / Timing Role: Back-to-back configured P-channel MOSFET providing reverse-current blocking and low-loss conduction.

Use Value: Negative V_GS(th) allows simple gate bias from rail; -16.3 A rating supports >20 A parallel configurations with margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPBF	R_DS(on) = 0.2 Ω @ -10 V; Q_g = 44 nC; TO-220 package, same pinout.	Higher conduction loss and slower switching; suitable only where efficiency <90 % is acceptable.	Choose IRF9540NPBF only if legacy design compatibility outweighs efficiency and thermal performance trade-offs.
IXTP12P10P	R_DS(on) = 0.12 Ω @ -10 V; Q_g = 29 nC; TO-220 package, same pinout.	Marginally lower R_DS(on) but higher Q_g; avalanche rating not specified in datasheet.	Select IXTP12P10P when lowest possible conduction loss is prioritized and avalanche stress is absent in system operation.

Compared with IRF9540NPBF and IXTP12P10P, SUP25P10-138-GE3 delivers the best balance of low R_DS(on), moderate Q_g, and guaranteed avalanche energy-making it optimal for thermally constrained, high-reliability DC/DC and motor control designs where both efficiency and transient robustness matter.

Availability

SUP25P10-138-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, motor control circuits, and hot-swap OR-ing applications requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant manufacturing.

Supply support for SUP25P10-138-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The SUP25P10-138-GE3 belongs to Vishay's TrenchFET® P-channel MOSFET family, engineered for high-voltage industrial power conversion, motor drives, and redundant power systems demanding low R_DS(on), fast switching, and proven avalanche capability.

FAQ

What is the maximum continuous drain current for SUP25P10-138-GE3 at 125 °C case temperature?

The maximum continuous drain current for SUP25P10-138-GE3 drops to -7.3 A at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and silicon die; proper heatsinking is essential to sustain higher currents at elevated temperatures. The SUP25P10-138-GE3 datasheet confirms this value under "Continuous Drain Current (T_J = 150 °C)" conditions.

Does SUP25P10-138-GE3 have a specified avalanche energy rating?

Yes, SUP25P10-138-GE3 has a single-pulse avalanche energy rating of 31.25 mJ, measured with L = 0.1 mH under standardized test conditions. This value is explicitly listed in the Absolute Maximum Ratings section and validated per Vishay's 100 % UIS testing protocol. The SUP25P10-138-GE3 specification sheet confirms this parameter supports reliable operation during inductive switching transients.

What is the gate-threshold voltage range for SUP25P10-138-GE3?

The gate-threshold voltage (V_GS(th)) for SUP25P10-138-GE3 is -2 V minimum to -4 V maximum, measured at V_DS = V_GS and I_D = -250 µA. This range ensures consistent turn-on behavior across temperature and process variation. The SUP25P10-138-GE3 datasheet specifies these values in the Static Characteristics table under "Gate-Threshold Voltage".

Is SUP25P10-138-GE3 compatible with standard TO-220AB footprints and mounting hardware?

Yes, SUP25P10-138-GE3 uses the industry-standard TO-220AB package with identical mechanical dimensions, pin layout (G-D-S), and heatsink hole placement as defined in Vishay document 71195. The drain is internally connected to the metal tab, requiring electrical isolation from the heatsink unless system grounding permits. The SUP25P10-138-GE3 package drawing confirms full footprint compatibility.

What is the typical total gate charge for SUP25P10-138-GE3 at V_GS = -6 V?

The typical total gate charge (Q_g) for SUP25P10-138-GE3 is 24 nC when driven at V_GS = -6 V, V_DS = -50 V, and I_D = -6.7 A. This value is critical for calculating gate driver power and estimating switching times. The SUP25P10-138-GE3 datasheet lists this parameter in the Dynamic Characteristics table under "Total Gate Charge".

SUP25P10-138-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 16.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 13.8mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2100 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 73.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP25P10-138-GE3 FAQ

1.How can I place an order for SUP25P10-138-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP25P10-138-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP25P10-138-GE3 reliable?

The price and inventory of SUP25P10-138-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP25P10-138-GE3 is usually 5 days.

3.What payment methods are accepted for SUP25P10-138-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP25P10-138-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP25P10-138-GE3?

SUP25P10-138-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP25P10-138-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP25P10-138-GE3?

For technical support, including SUP25P10-138-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP25P10-138-GE3 requirements.

6.How does Aetrix verify that SUP25P10-138-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP25P10-138-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP25P10-138-GE3 meets industry standards.

7.What is the process for return or replacement of SUP25P10-138-GE3?

All SUP25P10-138-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP25P10-138-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP25P10-138-GE3 part is unused and in its original packaging.

Return procedure for SUP25P10-138-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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