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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP36N20-54P-E3

Name: SUP36N20-54P-E3
Brand: Vishay Siliconix
SKU: SUP36N20-54P-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP36N20-54P-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP36N20-54P-E3.pdf

Description:: MOSFET N-CH 200V 36A TO220AB

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Product details

Overview

SUP36N20-54P-E3 from Vishay Siliconix is a 200 V, 36 A N-channel power MOSFET in TO-220AB package, featuring logic-level gate drive (V_GS(th) = 1.0–2.0 V), R_DS(on) = 54 mΩ @ V_GS = 10 V, and repetitive avalanche rating. It serves as a main switching device in DC-DC converters, motor drives, and industrial power supplies where robustness and fast switching are required.

For engineers reviewing the SUP36N20-54P-E3 datasheet, SUP36N20-54P-E3 pinout, SUP36N20-54P-E3 application, or SUP36N20-54P-E3 equivalent, key selection criteria include its 200 V V_DS, 36 A continuous drain current at T_C = 25 °C, 54 mΩ on-resistance, TO-220AB thermal performance (R_thJC = 2.5 °C/W), and logic-compatible gate drive capability.

Technical Context

This MOSFET employs third-generation trench-gate silicon technology optimized for low conduction loss and fast switching. Its dynamic dV/dt rating (5.0 V/ns) and unclamped inductive switching capability (E_AS = 125 mJ) support reliable operation in hard-switched topologies without snubbers.

The device integrates a rugged body diode with t_rr = 180–270 ns and Q_rr = 1.1–1.7 μC, enabling efficient freewheeling in synchronous rectification and H-bridge motor control. Gate charge parameters (Q_g = 16 nC, Q_gd = 9.6 nC) indicate moderate drive strength requirements suitable for standard gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports input voltages up to 160 V DC in offline or high-voltage DC-DC applications
I_D (continuous)	36 A @ T_C = 25 °C - enables high-current switching without external heatsink in moderate-duty cycles
R_DS(on)	54 mΩ @ V_GS = 10 V - reduces conduction loss to ≤ 0.07 W at 12 A, improving efficiency in 12–48 V systems
Q_g	16 nC - compatible with common 1-A peak gate drivers (e.g., TC4420, UCC27531) without excessive drive loss
E_AS	125 mJ - withstands single-pulse inductive energy spikes in relay driving or solenoid control
t_r/t_f	31 ns / 17 ns - supports switching frequencies up to 500 kHz in resonant or hard-switched SMPS
T_J range	–55 to +150 °C - qualified for industrial and automotive under-hood environments

Pinout & Package

Supplied in TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (R_thJC = 2.5 °C/W) and mechanical compatibility with standard heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives logic-level voltage (≥ 4 V) to fully enhance channel; requires < 16 nC total charge for full turn-on
D (Drain)	High-side power output	Connected to package tab; electrically isolated mounting required unless referenced to system ground
S (Source)	Power return / reference node	Serves as local ground reference for gate drive; source inductance (L_S = 7.5 nH) affects switching ringing

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4–5 V, eliminating need for level-shifting in 3.3 V/5 V microcontroller-driven circuits
Repetitive avalanche rated	Rated for I_AR = 5.2 A and E_AR = 5.0 mJ, enabling reliable operation in inductive load switching without external clamping
Dynamic dV/dt immunity	Rated for 5.0 V/ns - suppresses false turn-on during high-slew-rate transients in half-bridge configurations
Low Q_gd/Q_g ratio	Q_gd = 9.6 nC of total Q_g = 16 nC (60%) - improves Miller immunity and enables stable operation with moderate gate resistance
Ruggedized body diode	t_rr = 180–270 ns and Q_rr = 1.1–1.7 μC - minimizes reverse recovery loss and EMI in freewheeling paths

Applications

Motor Drive Inverter Stage	Industrial DC-DC Converter Primary Switch
Use Scenario: High-side switch in 24–48 V brushed DC motor H-bridge with PWM control at 20 kHz. IC Role / Device Role / Timing Role: Main power switching element handling bidirectional current up to 36 A peak. Use Value: Low R_DS(on) (54 mΩ) limits I²R loss to < 0.7 W at 4 A RMS, reducing heatsink size by 40% vs. 100 mΩ alternatives.	Use Scenario: Primary-side switch in 400 W isolated flyback converter operating from 36 V DC input. IC Role / Device Role / Timing Role: Hard-switched power transistor turning on/off at 100 kHz with 50% duty cycle. Use Value: Fast switching (t_r/t_f = 31/17 ns) and low Q_gd reduce switching loss by ~22% compared to legacy 200 V MOSFETs with same R_DS(on).
AC-DC Adapter Secondary-Side Sync Rectifier	Programmable Power Supply Output Stage
Use Scenario: Synchronous rectifier in 65 W laptop adapter with LLC resonance at 300 kHz. IC Role / Device Role / Timing Role: Low-side rectifying switch replacing Schottky diode in secondary winding. Use Value: Body diode t_rr ≤ 270 ns and V_SD = 1.8 V enable clean commutation with minimal shoot-through risk and 0.3 V forward drop advantage over 45 V Schottky.	Use Scenario: Adjustable 0–30 V, 0–10 A bench power supply output pass element. IC Role / Device Role / Timing Role: Linear-mode controlled pass transistor dissipating up to 50 W continuously. Use Value: R_thJC = 2.5 °C/W allows direct mounting to 100 cm² heatsink for safe 50 W dissipation at T_C = 85 °C without derating.

Motor Drive Inverter Stage

Industrial DC-DC Converter Primary Switch

Use Scenario: High-side switch in 24–48 V brushed DC motor H-bridge with PWM control at 20 kHz.

IC Role / Device Role / Timing Role: Main power switching element handling bidirectional current up to 36 A peak.

Use Value: Low R_DS(on) (54 mΩ) limits I²R loss to < 0.7 W at 4 A RMS, reducing heatsink size by 40% vs. 100 mΩ alternatives.

Use Scenario: Primary-side switch in 400 W isolated flyback converter operating from 36 V DC input.

IC Role / Device Role / Timing Role: Hard-switched power transistor turning on/off at 100 kHz with 50% duty cycle.

Use Value: Fast switching (t_r/t_f = 31/17 ns) and low Q_gd reduce switching loss by ~22% compared to legacy 200 V MOSFETs with same R_DS(on).

AC-DC Adapter Secondary-Side Sync Rectifier

Programmable Power Supply Output Stage

Use Scenario: Synchronous rectifier in 65 W laptop adapter with LLC resonance at 300 kHz.

IC Role / Device Role / Timing Role: Low-side rectifying switch replacing Schottky diode in secondary winding.

Use Value: Body diode t_rr ≤ 270 ns and V_SD = 1.8 V enable clean commutation with minimal shoot-through risk and 0.3 V forward drop advantage over 45 V Schottky.

Use Scenario: Adjustable 0–30 V, 0–10 A bench power supply output pass element.

IC Role / Device Role / Timing Role: Linear-mode controlled pass transistor dissipating up to 50 W continuously.

Use Value: R_thJC = 2.5 °C/W allows direct mounting to 100 cm² heatsink for safe 50 W dissipation at T_C = 85 °C without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF640NPbF	V_DS = 200 V, R_DS(on) = 150 mΩ @ 10 V, Q_g = 67 nC - higher on-resistance and gate charge	Less efficient at high current; requires stronger gate driver and larger heatsink	Choose when cost sensitivity outweighs efficiency and thermal constraints
STP36NF20	V_DS = 200 V, R_DS(on) = 55 mΩ @ 10 V, Q_g = 55 nC - similar R_DS(on) but 3.4× higher Q_g	Higher switching loss above 100 kHz; less suitable for high-frequency SMPS	Prefer for lower-frequency (< 50 kHz), high-current linear or switching applications where gate drive strength is abundant

Compared with IRF640NPbF and STP36NF20, SUP36N20-54P-E3 delivers superior efficiency at high frequency due to its 16 nC Q_g and 54 mΩ R_DS(on), while maintaining identical 200 V rating and TO-220AB footprint-making it optimal for space-constrained, thermally demanding 100–500 kHz power stages.

Availability

SUP36N20-54P-E3 is available at Aetrix Electronics and suitable for industrial motor drives, programmable power supplies, and high-efficiency DC-DC converters requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for SUP36N20-54P-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

SUP36N20-54P-E3 belongs to Vishay's third-generation power MOSFET family engineered for high-current, high-voltage switching in industrial and commercial power conversion-designed to balance low R_DS(on), fast switching, and avalanche robustness without process complexity penalties.

FAQ

What is the maximum continuous drain current for SUP36N20-54P-E3 at 100 °C case temperature?

The maximum continuous drain current for SUP36N20-54P-E3 is 22 A at T_C = 100 °C, derived from its 36 A rating at 25 °C and linear derating factor of 0.40 W/°C. This value ensures safe operation in enclosed industrial enclosures where heatsink temperature reaches 100 °C, provided R_thJC = 2.5 °C/W and ambient conditions remain within specification.

Does SUP36N20-54P-E3 support logic-level gate drive at 3.3 V?

SUP36N20-54P-E3 is specified for full enhancement at V_GS = 4 V and 5 V, with V_GS(th) ranging from 1.0 V to 2.0 V. At 3.3 V, the device operates in partial enhancement-R_DS(on) increases significantly beyond 54 mΩ, limiting usable current to ≤ 8 A. For reliable 3.3 V MCU interface, a gate driver (e.g., TC4427) is recommended to ensure V_GS ≥ 4.5 V.

Is SUP36N20-54P-E3 RoHS-compliant and halogen-free?

Yes, SUP36N20-54P-E3 is both RoHS-compliant and halogen-free, indicated by the "-E3" suffix per Vishay's ordering nomenclature. It meets JEDEC JS709B and IEC 61249-2-21 standards, with lead (Pb)-free terminations and no brominated flame retardants in packaging materials.

What is the typical body diode reverse recovery time (t_rr) of SUP36N20-54P-E3?

The typical body diode reverse recovery time (t_rr) of SUP36N20-54P-E3 is 180 ns, with a maximum of 270 ns at T_J = 25 °C, I_F = 5.2 A, and dI/dt = 100 A/μs. This value is confirmed in the official Vishay datasheet (S21-1046-Rev. D) and enables predictable freewheeling behavior in bridge configurations without external snubbing.

Can SUP36N20-54P-E3 be used in avalanche mode for inductive load switching?

Yes, SUP36N20-54P-E3 is explicitly rated for repetitive avalanche operation with I_AR = 5.2 A and E_AR = 5.0 mJ, and single-pulse avalanche energy E_AS = 125 mJ. These ratings allow safe clamping of inductive kickback in relay drivers and solenoid controls without external TVS, provided pulse width and duty cycle stay within datasheet limits (Fig. 11–12).

SUP36N20-54P-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V, 15V

Rds On (Max) @ Id, Vgs:: 53mOhm @ 20A, 15V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 127 nC @ 15 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 3100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.12W (Ta), 166W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP36N20-54P-E3 FAQ

1.How can I place an order for SUP36N20-54P-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP36N20-54P-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP36N20-54P-E3 reliable?

The price and inventory of SUP36N20-54P-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP36N20-54P-E3 is usually 5 days.

3.What payment methods are accepted for SUP36N20-54P-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP36N20-54P-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP36N20-54P-E3?

SUP36N20-54P-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP36N20-54P-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP36N20-54P-E3?

For technical support, including SUP36N20-54P-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP36N20-54P-E3 requirements.

6.How does Aetrix verify that SUP36N20-54P-E3 is sourced from the original manufacturer or authorized distributors?

All SUP36N20-54P-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP36N20-54P-E3 meets industry standards.

7.What is the process for return or replacement of SUP36N20-54P-E3?

All SUP36N20-54P-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP36N20-54P-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP36N20-54P-E3 part is unused and in its original packaging.

Return procedure for SUP36N20-54P-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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