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Vishay Siliconix SUP40010EL-GE3
- Part No.:
- SUP40010EL-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SUP40010EL-GE3.pdf
- Description:
- MOSFET N-CH 40V 120A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:77
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Product details
Overview
SUP40010EL-GE3 from Vishay Siliconix is an N-channel 40 V TrenchFET® power MOSFET in TO-220AB package, rated for 120 A continuous drain current at TJ = 150 °C, with RDS(on) of 1.47 mΩ at VGS = 10 V and 1.72 mΩ at VGS = 4.5 V, designed for high-efficiency secondary-side synchronous rectification in DC/DC converters and motor drive switches.
For engineers reviewing the SUP40010EL-GE3 datasheet, SUP40010EL-GE3 pinout, SUP40010EL-GE3 application, or SUP40010EL-GE3 equivalent, key selection factors include its logic-level gate drive capability (VGS(th) = 1.2–2.5 V), low Qgd/Qgs ratio (< 0.5), 175 °C max junction temperature, and 100 % UIS-tested ruggedness for demanding industrial power switching.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance and fast switching with controlled gate charge distribution-Qg = 150 nC (typ.), Qgd = 11 nC (typ.), and Qgs = 32 nC (typ.) at VDS = 20 V. Its dynamic performance supports high-frequency operation in hard-switched topologies up to several hundred kHz.
The device features integrated body diode with trr = 135 ns (typ.) and Qrr = 0.34 μC (typ.) at IF = 41 A, di/dt = 100 A/μs, enabling efficient freewheeling in bridge configurations. Thermal design is supported by RthJC = 0.4 °C/W and SOA-rated pulsed current up to 300 A (100 μs).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 36 V nominal bus systems and 48 V industrial power rails. |
| RDS(on) @ 10 V | 1.47 mΩ (typ.) - Enables <1.8 W conduction loss at 120 A, critical for high-current synchronous rectifiers. |
| ID (cont.) | 120 A @ TC = 25 °C - Supports high-power density designs without forced air cooling when mounted on heatsink. |
| Qgd/Qgs | < 0.5 - Reduces Miller-induced turn-off delay and improves EMI behavior in high-dV/dt switching environments. |
| TJ max | +175 °C - Allows operation in sealed enclosures or high-ambient industrial environments without derating. |
| VGS(th) | 1.2–2.5 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers, eliminating need for gate boosters. |
| UIS Tested | 100 % production tested - Guarantees robustness against inductive switching transients in motor and solenoid drives. |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting, 13.35–14.02 mm length, 10.04–10.51 mm width, and 4.25–4.65 mm height. Tab is electrically connected to drain for direct heatsink coupling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heatsink interface | Electrically tied to metal tab; requires insulating washer if heatsink is grounded; enables low-inductance thermal path. |
| Source | Reference node for gate drive and current sensing | Low-impedance return path; used as common reference for shunt-based current monitoring in half-bridge configurations. |
| Gate | Control input for channel modulation | High-impedance MOS control terminal; requires ≤1.6 Ω gate resistance (Rg) to damp ringing per datasheet recommendation. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × Qg figure-of-merit (≈220 mΩ·nC), optimizing trade-off between conduction and switching losses. |
| Logic-level gate drive | Operates fully enhanced with VGS ≥ 4.5 V, enabling direct interface with microcontrollers, PWM controllers, and gate drivers without level-shifting. |
| 100 % UIS testing | Each unit validated for unclamped inductive switching energy (EAS = 320 mJ), ensuring reliability in motor commutation and relay driving. |
| Halogen-free & Pb-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709B, supporting environmentally compliant industrial and automotive-qualified assemblies. |
| 175 °C junction rating | Extends usable lifetime in thermally constrained applications such as enclosed battery management systems and power tools. |
Applications
| Secondary Synchronous Rectification | Brushless DC Motor Drive |
|---|---|
|
Use Scenario: High-current output stage in isolated 48 V DC/DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 95 %. Use Value: 1.47 mΩ RDS(on) cuts forward voltage drop to ~177 mV at 120 A, reducing rectifier loss by >60 % vs. 45 V Schottky. |
Use Scenario: High-current phase-leg switch in 1–3 kW cordless power tools with battery packs up to 60 V. IC Role / Device Role / Timing Role: N-channel high-side or low-side switch in 3-phase inverter bridge, driven by isolated gate driver. Use Value: 120 A continuous rating and 300 A pulsed capability support peak torque delivery without thermal throttling during stall conditions. |
| Battery Management System (BMS) | Industrial DC/AC Inverter |
|
Use Scenario: Main discharge/charge FET in high-capacity Li-ion battery packs for energy storage and e-mobility. IC Role / Device Role / Timing Role: Bidirectional current-handling switch controlling pack connection to load/charger with overcurrent protection. Use Value: 80 A avalanche current (IAS) and 320 mJ single-pulse energy rating enable safe interruption of fault currents without external fusing. |
Use Scenario: Output stage switch in 1–5 kVA single-phase inverters for solar microinverters and UPS systems. IC Role / Device Role / Timing Role: Hard-switched power switch operating at 16–20 kHz with active clamping or snubbing networks. Use Value: Low Crss (880 pF typ.) and Qgd/Qgs < 0.5 minimize voltage-dependent gate drive loss and improve ZVS margin in resonant topologies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFB4115PBF | RDS(on) = 3.2 mΩ @ 10 V; TO-220AB; VDS = 150 V; Qg = 120 nC | Higher voltage rating suits 100–120 V bus systems but higher on-resistance increases conduction loss at 40 V. | Choose IRFB4115PBF only if system requires >40 V blocking; otherwise SUP40010EL-GE3 delivers superior efficiency at 40 V. |
| STP120N4F6 | RDS(on) = 2.4 mΩ @ 10 V; TO-220FP; VDS = 40 V; Qg = 115 nC; no UIS test specified | Smaller TO-220FP package limits thermal dissipation; lacks 100 % UIS screening for inductive loads. | Select STP120N4F6 only for space-constrained, lower-duty-cycle applications where ruggedness is secondary to footprint. |
Compared with IRFB4115PBF and STP120N4F6, the SUP40010EL-GE3 offers the lowest RDS(on) at 40 V, full UIS qualification, and TO-220AB's superior thermal performance-making it optimal for high-current, high-reliability 40 V power switching where efficiency and transient robustness are prioritized.
Availability
SUP40010EL-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, battery management systems, and high-efficiency DC/DC converters requiring stable component supply, long-term lifecycle support, and traceable halogen-free sourcing.
Supply support for SUP40010EL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The SUP40010EL-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-current, low-voltage power conversion where minimal conduction loss and robust switching reliability are essential.
FAQ
What is the maximum continuous drain current rating for SUP40010EL-GE3?
The SUP40010EL-GE3 is rated for 120 A continuous drain current at case temperature TC = 25 °C and junction temperature TJ = 150 °C. Derating applies above TC = 25 °C per the datasheet's thermal curves, with 125 W max power dissipation at TC = 125 °C. This rating assumes proper heatsinking per TO-220AB mounting guidelines.
Does SUP40010EL-GE3 support logic-level gate drive?
Yes, the SUP40010EL-GE3 supports logic-level gate drive with a gate threshold voltage VGS(th) range of 1.2–2.5 V and guaranteed RDS(on) of 2.1 mΩ max at VGS = 4.5 V. It fully enhances with standard 3.3 V or 5 V microcontroller outputs, eliminating need for gate voltage boosting in most low-voltage power stages.
Is SUP40010EL-GE3 qualified for automotive applications?
The SUP40010EL-GE3 is not AEC-Q101 qualified. It is designed for industrial, computing, and consumer power applications. For automotive use, Vishay offers AEC-Q101-qualified variants in the same TrenchFET® family-but SUP40010EL-GE3 itself carries no automotive qualification documentation or stress-test reporting.
What is the thermal resistance from junction to case for SUP40010EL-GE3?
The SUP40010EL-GE3 has a junction-to-case thermal resistance RthJC of 0.4 °C/W, measured from die junction to the drain-connected metal tab. This value enables precise thermal modeling when the tab is mounted to a heatsink with known interface resistance, supporting accurate TJ estimation under load.
How is avalanche ruggedness verified for SUP40010EL-GE3?
The SUP40010EL-GE3 undergoes 100 % production unclamped inductive switching (UIS) testing per JEDEC JESD22-A110. Each unit is validated to withstand 320 mJ single-pulse avalanche energy (EAS) with IAS = 80 A, ensuring reliable operation during inductive turn-off transients in motor and transformer-driven circuits.
SUP40010EL-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- ThunderFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 230 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11155 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SUP40010EL-GE3 FAQ
1.How can I place an order for SUP40010EL-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUP40010EL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUP40010EL-GE3 reliable?
The price and inventory of SUP40010EL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP40010EL-GE3 is usually 5 days.
3.What payment methods are accepted for SUP40010EL-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP40010EL-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUP40010EL-GE3?
SUP40010EL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUP40010EL-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUP40010EL-GE3?
For technical support, including SUP40010EL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP40010EL-GE3 requirements.
6.How does Aetrix verify that SUP40010EL-GE3 is sourced from the original manufacturer or authorized distributors?
All SUP40010EL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP40010EL-GE3 meets industry standards.
7.What is the process for return or replacement of SUP40010EL-GE3?
All SUP40010EL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP40010EL-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUP40010EL-GE3 part is unused and in its original packaging.
Return procedure for SUP40010EL-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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