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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP40012EL-GE3

Name: SUP40012EL-GE3
Brand: Vishay Siliconix
SKU: SUP40012EL-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP40012EL-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP40012EL-GE3.pdf

Description:: MOSFET N-CH 40V 150A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SUP40012EL-GE3 from Vishay Siliconix is an N-channel 40 V, 150 A TrenchFET® power MOSFET in TO-220AB package, featuring R_DS(on) = 1.49 mΩ at V_GS = 10 V and Q_g = 130 nC, optimized for high-efficiency secondary synchronous rectification in DC/DC converters and motor drive switches.

For engineers reviewing the SUP40012EL-GE3 datasheet, SUP40012EL-GE3 pinout, SUP40012EL-GE3 application, or SUP40012EL-GE3 equivalent, this device is selected for high-current, low-R_DS(on) switching in thermally constrained industrial power supplies and battery management systems where junction temperature up to +175 °C must be sustained.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low conduction loss and optimized gate charge trade-offs. Its R_DS(on)-Q_g and R_DS(on)-Q_oss figures of merit support high-frequency operation with minimal switching loss in hard-switched topologies.

The device integrates a robust body diode with t_rr = 58 ns (typ.) and Q_rr = 72 nC (typ.), enabling reliable freewheeling in synchronous buck and half-bridge configurations without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage; defines safe operating range in 12–24 V input systems with transient margin.
R_DS(on) max @ V_GS = 10 V	1.79 mΩ - Enables ≤2.2 W conduction loss at 150 A DC, critical for thermal management in compact power stages.
R_DS(on) max @ V_GS = 4.5 V	2.36 mΩ - Supports logic-level gate drive compatibility with 3.3 V/5 V controllers in space-constrained designs.
Q_g typ.	130 nC - Determines gate driver power requirement and switching speed; enables <50 ns rise/fall times with 1 Ω driver.
I_D continuous @ T_C = 25 °C	150 A - Sustains high output current in PCB-mounted applications with heatsink interface.
T_J max	+175 °C - Allows operation in harsh environments (e.g., power tools, motor drives) without derating below ambient +125 °C.
R_thJC	1.0 °C/W - Confirms efficient heat transfer from die to case; requires low-thermal-resistance mounting for full current rating.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, and heatsink-compatible outline per Vishay drawing 71195. Tab is electrically connected to drain; mounting screw hole centered for mechanical stability.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load return	Electrically tied to metal tab; requires insulated mounting hardware when referenced to non-drain potential.
Source	Reference node for gate control and current sensing	Low-inductance connection point for shunt resistors and gate driver ground reference.
Gate	Control terminal for channel modulation	High-impedance input requiring <3.6 Ω series resistance to damp ringing; sensitive to ESD (±20 V rating).

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on)-Q_g FOM for reduced total power loss in high-frequency switching.
100 % R_g and UIS tested	Ensures gate resistance consistency and ruggedness against unclamped inductive switching stress in motor drive applications.
Body diode with low Q_rr	72 nC typical reverse recovery charge minimizes shoot-through risk and EMI in synchronous rectifiers.
175 °C maximum junction temperature	Supports extended lifetime in sealed enclosures or high-ambient industrial environments without forced cooling.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc# 99912.

Applications

Power Supply Secondary Rectification	DC/DC Converter High-Side Switch
Use Scenario: Used as synchronous rectifier in isolated 12 V/48 V output stage of telecom and server PSUs. IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode to reduce forward voltage drop and improve efficiency above 90 %. Use Value: 1.49 mΩ R_DS(on) cuts conduction loss by >65 % vs. 40 V Schottky, directly increasing full-load efficiency.	Use Scenario: High-current primary-side switch in 400 W industrial DC/DC brick with 24 V input. IC Role / Device Role / Timing Role: Main power switch in hard-switched buck converter operating at 100–250 kHz. Use Value: 130 nC Q_g enables fast turn-on with minimal driver dissipation, supporting stable PWM control at elevated frequencies.
Power Tool Motor Drive	Battery Management System Switch
Use Scenario: H-bridge upper/lower quadrant switch in cordless drill BLDC driver with 18–24 V Li-ion pack. IC Role / Device Role / Timing Role: High-current bidirectional switching element handling peak currents up to 300 A pulsed. Use Value: 300 A I_DM rating and 125 mJ E_AS withstand capability ensure reliability during stall and commutation transients.	Use Scenario: Main protection switch between battery pack and system load in 20–30 A portable medical equipment BMS. IC Role / Device Role / Timing Role: Load disconnect and short-circuit isolation switch controlled via microcontroller GPIO. Use Value: 1.0 °C/W R_thJC allows direct heatsinking to chassis, enabling rapid thermal response during fault current interruption.

Power Supply Secondary Rectification

DC/DC Converter High-Side Switch

Use Scenario: Used as synchronous rectifier in isolated 12 V/48 V output stage of telecom and server PSUs.

IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode to reduce forward voltage drop and improve efficiency above 90 %.

Use Value: 1.49 mΩ R_DS(on) cuts conduction loss by >65 % vs. 40 V Schottky, directly increasing full-load efficiency.

Use Scenario: High-current primary-side switch in 400 W industrial DC/DC brick with 24 V input.

IC Role / Device Role / Timing Role: Main power switch in hard-switched buck converter operating at 100–250 kHz.

Use Value: 130 nC Q_g enables fast turn-on with minimal driver dissipation, supporting stable PWM control at elevated frequencies.

Power Tool Motor Drive

Battery Management System Switch

Use Scenario: H-bridge upper/lower quadrant switch in cordless drill BLDC driver with 18–24 V Li-ion pack.

IC Role / Device Role / Timing Role: High-current bidirectional switching element handling peak currents up to 300 A pulsed.

Use Value: 300 A I_DM rating and 125 mJ E_AS withstand capability ensure reliability during stall and commutation transients.

Use Scenario: Main protection switch between battery pack and system load in 20–30 A portable medical equipment BMS.

IC Role / Device Role / Timing Role: Load disconnect and short-circuit isolation switch controlled via microcontroller GPIO.

Use Value: 1.0 °C/W R_thJC allows direct heatsinking to chassis, enabling rapid thermal response during fault current interruption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 131 nC; TO-220 package; lower current rating (130 A).	Higher conduction loss limits use in >100 A continuous applications; suitable for cost-sensitive 48 V systems with relaxed thermal budget.	Select when board-level thermal design cannot accommodate 150 A continuous current but gate drive compatibility is retained.
STP160NF04Z	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 120 nC; TO-220FP variant; lower I_D (120 A) and T_J max (+175 °C same).	Reduced current capacity and different package footprint (TO-220FP) require layout revision; better suited for space-constrained consumer-grade inverters.	Choose only if footprint change is acceptable and peak current demand stays below 120 A with 4.5 V gate drive.

Compared with IRF1404PBF and STP160NF04Z, the SUP40012EL-GE3 delivers superior conduction efficiency at high current due to its 1.49 mΩ R_DS(on), making it optimal for thermally demanding industrial and automotive-adjacent applications where minimizing I²R loss is critical.

Availability

SUP40012EL-GE3 is available at Aetrix Electronics and suitable for power supply secondary rectification, DC/DC converter switching, and motor drive applications requiring stable component supply across production lifecycles.

Supply support for SUP40012EL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SUP40012EL-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-efficiency switching in industrial power conversion and motor control systems.

FAQ

What is the maximum continuous drain current rating for SUP40012EL-GE3 at 70 °C case temperature?

The SUP40012EL-GE3 supports 150 A continuous drain current at T_C = 70 °C, matching its rating at 25 °C per Vishay's absolute maximum ratings table. This reflects its robust thermal design and low R_thJC of 1.0 °C/W, enabling stable high-current operation without derating until T_C exceeds 125 °C.

Does SUP40012EL-GE3 have a fully rated avalanche capability, and what is its single-pulse energy limit?

Yes, the SUP40012EL-GE3 is 100 % UIS tested and specifies a single-pulse avalanche energy (E_AS) of 125 mJ at L = 0.1 mH. This validated ruggedness ensures reliable operation during inductive switching events in motor drive and DC/DC converter applications without external snubbers.

Is SUP40012EL-GE3 compatible with 4.5 V gate drive, and what is its R_DS(on) under that condition?

Yes, the SUP40012EL-GE3 is fully characterized for 4.5 V gate drive, with R_DS(on) max = 2.36 mΩ at I_D = 20 A and T_J = 25 °C. This makes it suitable for direct interfacing with 5 V or 3.3 V logic-level controllers without level-shifting circuitry.

What is the thermal resistance from junction to ambient (R_thJA) for SUP40012EL-GE3 when mounted on a 1" square FR4 PCB?

The SUP40012EL-GE3 has a junction-to-ambient thermal resistance (R_thJA) of 40 °C/W when mounted on a 1" × 1" FR4 PCB with 2 oz. copper on both sides. This value assumes no external heatsink; actual performance improves significantly with proper tab-to-heatsink interface.

How does the body diode performance of SUP40012EL-GE3 compare to standard Schottky rectifiers in synchronous rectification?

The SUP40012EL-GE3 body diode offers V_SD = 0.8 V (typ.) at I_F = 10 A and t_rr = 58 ns (typ.), delivering lower forward loss than 40 V Schottky diodes above ~8 A and faster recovery than most Si PN diodes. Its Q_rr = 72 nC (typ.) reduces switching loss and EMI in high-frequency synchronous rectifiers.

SUP40012EL-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.79mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 195 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10930 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP40012EL-GE3 FAQ

1.How can I place an order for SUP40012EL-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP40012EL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP40012EL-GE3 reliable?

The price and inventory of SUP40012EL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP40012EL-GE3 is usually 5 days.

3.What payment methods are accepted for SUP40012EL-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP40012EL-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP40012EL-GE3?

SUP40012EL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP40012EL-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP40012EL-GE3?

For technical support, including SUP40012EL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP40012EL-GE3 requirements.

6.How does Aetrix verify that SUP40012EL-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP40012EL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP40012EL-GE3 meets industry standards.

7.What is the process for return or replacement of SUP40012EL-GE3?

All SUP40012EL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP40012EL-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP40012EL-GE3 part is unused and in its original packaging.

Return procedure for SUP40012EL-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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