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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP40N10-30-E3

Name: SUP40N10-30-E3
Brand: Vishay Siliconix
SKU: SUP40N10-30-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP40N10-30-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP40N10-30-E3.pdf

Description:: MOSFET N-CH 100V 40A TO220AB

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Product details

Overview

SUP40N10-30-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 100 V drain-source voltage, 40 A continuous drain current at TC = 25 °C, and 0.030 Ω typical RDS(on) at VGS = 10 V. It operates up to 175 °C junction temperature and is used in high-efficiency DC-DC converters, motor control H-bridges, and industrial power switching circuits.

For engineers reviewing the SUP40N10-30-E3 datasheet, SUP40N10-30-E3 pinout, SUP40N10-30-E3 application, or SUP40N10-30-E3 equivalent, key selection criteria include its 100 V breakdown rating, low 0.030 Ω on-resistance at 10 V gate drive, 175 °C thermal capability, TO-220AB package mechanical compatibility, and avalanche energy rating of 61 mJ.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage (2–4 V) enables compatibility with standard 5 V and 10 V logic-level drivers, while its 35–60 nC total gate charge supports efficient gate driving at moderate frequencies.

The device features a built-in body diode with 1.0–1.5 V forward voltage at 30 A and 60–100 ns reverse recovery time, making it suitable for synchronous rectification and freewheeling paths where controlled diode conduction is required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage before avalanche; defines use in ≤100 V bus systems
R_DS(on)	0.030 Ω @ V_GS = 10 V, I_D = 15 A - Enables <1.2 W conduction loss at 20 A
I_D (continuous)	40 A @ T_C = 25 °C - Requires heatsinking above ~23 A at 125 °C case temperature
E_AS	61 mJ - Supports single-pulse inductive load switching without external snubbers
T_J max	175 °C - Allows operation in high-ambient industrial environments with derated power
Q_g	35–60 nC - Determines gate driver current requirement (~1–2 A peak for 20 ns rise)
R_thJC	1.4 °C/W - Enables direct thermal path to heatsink; critical for thermal design margin

Pinout & Package

Package: TO-220AB, through-hole, single-ended heat sink tab (Drain-connected), RoHS-compliant lead-free termination (E3 suffix).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; requires 2–4 V threshold to turn on; driven by logic-level or dedicated gate driver
D	Drain	Main high-side or low-side switching node; electrically connected to metal tab for thermal conduction
S	Source	Reference node for gate drive; common return for load current; tied to ground or floating node per topology

Key Features

Feature	Design Value
TrenchFET® technology	Enables lower R_DS(on) per die area vs. planar MOSFETs, improving power density in TO-220 footprint
175 °C maximum junction temperature	Supports operation in sealed enclosures or high-ambient environments without forced air cooling
61 mJ single-pulse avalanche energy	Allows reliable switching into inductive loads without external clamping in many industrial motor drives
Body diode with 60–100 ns t_rr	Reduces need for external freewheeling diodes in half-bridge and buck converter applications

Applications

Motor Drive Inverter Stage	Industrial DC-DC Converter Primary Switch
Use Scenario: High-current H-bridge for 24–48 V BLDC motor control in factory automation actuators. IC Role / Device Role / Timing Role: Low-side and high-side switching element in three-phase inverter leg; switched at 10–20 kHz. Use Value: 0.030 Ω R_DS(on) minimizes I²R losses during 30–40 A peak phase currents, reducing heatsink size.	Use Scenario: Primary-side switch in isolated 48 V input, 12 V output full-bridge DC-DC converter for telecom power shelves. IC Role / Device Role / Timing Role: Main power switch handling 25 A RMS primary current; operated with zero-voltage switching assist. Use Value: 100 V V_DS rating provides 2× safety margin over 48 V nominal bus, supporting transient surges up to 80 V.
UPS Battery Disconnect Switch	High-Power LED Driver Switch
Use Scenario: Solid-state battery disconnect in 48 V UPS systems requiring fail-safe isolation during fault conditions. IC Role / Device Role / Timing Role: Normally-closed high-side switch; activated only during normal operation; must sustain short-circuit events. Use Value: 175 °C T_J rating and 61 mJ E_AS allow safe interruption of >30 A fault current without thermal runaway.	Use Scenario: PWM-controlled main switch in constant-current 350 W LED driver for high-bay lighting fixtures. IC Role / Device Role / Timing Role: Low-side switching element modulated at 1–5 kHz to regulate LED string current. Use Value: Low 0.030 Ω R_DS(on) keeps conduction loss below 0.5 W at 40 A, enabling passive-cooled enclosure design.

Motor Drive Inverter Stage

Industrial DC-DC Converter Primary Switch

Use Scenario: High-current H-bridge for 24–48 V BLDC motor control in factory automation actuators.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in three-phase inverter leg; switched at 10–20 kHz.

Use Value: 0.030 Ω R_DS(on) minimizes I²R losses during 30–40 A peak phase currents, reducing heatsink size.

Use Scenario: Primary-side switch in isolated 48 V input, 12 V output full-bridge DC-DC converter for telecom power shelves.

IC Role / Device Role / Timing Role: Main power switch handling 25 A RMS primary current; operated with zero-voltage switching assist.

Use Value: 100 V V_DS rating provides 2× safety margin over 48 V nominal bus, supporting transient surges up to 80 V.

UPS Battery Disconnect Switch

High-Power LED Driver Switch

Use Scenario: Solid-state battery disconnect in 48 V UPS systems requiring fail-safe isolation during fault conditions.

IC Role / Device Role / Timing Role: Normally-closed high-side switch; activated only during normal operation; must sustain short-circuit events.

Use Value: 175 °C T_J rating and 61 mJ E_AS allow safe interruption of >30 A fault current without thermal runaway.

Use Scenario: PWM-controlled main switch in constant-current 350 W LED driver for high-bay lighting fixtures.

IC Role / Device Role / Timing Role: Low-side switching element modulated at 1–5 kHz to regulate LED string current.

Use Value: Low 0.030 Ω R_DS(on) keeps conduction loss below 0.5 W at 40 A, enabling passive-cooled enclosure design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP40NF10L	100 V, 40 A, R_DS(on) = 0.032 Ω @ 10 V; logic-level gate; same TO-220AB package	Higher gate charge (70 nC) increases driver loss; slightly higher R_DS(on) raises conduction loss by ~7%	Acceptable for lower-frequency (<10 kHz) switching where gate drive loss is secondary to cost
IRF540NPBF	100 V, 33 A, R_DS(on) = 0.044 Ω @ 10 V; standard gate threshold; TO-220AB	Lower current rating and higher on-resistance increase thermal stress at 40 A; no specified avalanche rating	Only suitable for derated operation (≤25 A) or non-inductive loads where avalanche immunity is not required

Compared with STP40NF10L and IRF540NPBF, the SUP40N10-30-E3 delivers superior thermal robustness (175 °C), higher avalanche energy (61 mJ), and lower R_DS(on), making it preferred for high-reliability industrial motor drives and DC-DC converters operating near thermal limits.

Availability

SUP40N10-30-E3 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and high-power LED lighting systems requiring stable component supply and long-term manufacturability.

Supply support for SUP40N10-30-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and performance in harsh environments.

The SUP40N10-30-E3 belongs to Vishay's TrenchFET® Gen III power MOSFET family, engineered for high-current, high-temperature industrial switching applications demanding low R_DS(on) and robust avalanche capability.

FAQ

What is the maximum continuous drain current rating for SUP40N10-30-E3 at 125 °C case temperature?

The SUP40N10-30-E3 is rated for 23 A continuous drain current at TC = 125 °C. This derating reflects increased R_DS(on) and thermal resistance at elevated temperatures. Designers must ensure heatsink design maintains TC ≤ 125 °C when operating near this current level to avoid exceeding the 175 °C maximum junction temperature.

Is SUP40N10-30-E3 compatible with 5 V logic-level gate drive?

Yes, SUP40N10-30-E3 has a gate threshold voltage range of 2–4 V, allowing turn-on with 5 V logic signals. However, full enhancement and minimum R_DS(on) require V_GS ≥ 10 V. For optimal efficiency, a 10 V gate drive is recommended; 5 V drive yields higher on-resistance (~0.034 Ω) and reduced current capability.

Does SUP40N10-30-E3 have a specified avalanche rating, and how is it tested?

Yes, SUP40N10-30-E3 is rated for 61 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH. This rating is verified per JEDEC JESD24-11 using unclamped inductive switching tests with pulse width ≤ 300 µs and duty cycle ≤ 2 %. It supports reliable operation in inductive load switching without external snubbers under defined conditions.

What is the thermal resistance from junction to case (R_thJC) for SUP40N10-30-E3, and why does it matter?

The SUP40N10-30-E3 has a junction-to-case thermal resistance of 1.4 °C/W. This value directly determines the temperature rise from die to heatsink mounting surface. A low R_thJC enables efficient heat transfer to external heatsinks, which is essential for maintaining TJ ≤ 175 °C under high-current operation and simplifies thermal design in space-constrained industrial systems.

How does the body diode performance of SUP40N10-30-E3 compare to external Schottky diodes in freewheeling applications?

The SUP40N10-30-E3 body diode has V_SD = 1.0–1.5 V at 30 A and t_rr = 60–100 ns. While less efficient than low-V_F Schottky diodes, its integrated nature eliminates layout complexity and parasitic inductance. It is suitable for moderate-frequency freewheeling (e.g., <20 kHz buck converters), but external Schottkys remain preferred for ultra-low-loss or high-frequency (>100 kHz) designs.

SUP40N10-30-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.75W (Ta), 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP40N10-30-E3 FAQ

1.How can I place an order for SUP40N10-30-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP40N10-30-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP40N10-30-E3 reliable?

The price and inventory of SUP40N10-30-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP40N10-30-E3 is usually 5 days.

3.What payment methods are accepted for SUP40N10-30-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP40N10-30-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP40N10-30-E3?

SUP40N10-30-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP40N10-30-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP40N10-30-E3?

For technical support, including SUP40N10-30-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP40N10-30-E3 requirements.

6.How does Aetrix verify that SUP40N10-30-E3 is sourced from the original manufacturer or authorized distributors?

All SUP40N10-30-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP40N10-30-E3 meets industry standards.

7.What is the process for return or replacement of SUP40N10-30-E3?

All SUP40N10-30-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP40N10-30-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP40N10-30-E3 part is unused and in its original packaging.

Return procedure for SUP40N10-30-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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