Vishay Siliconix SUP40N25-60-E3

Overview

SUP40N25-60-E3 from Vishay Siliconix is a 250 V, 40 A N-channel power MOSFET in TO-220AB package, featuring R_DS(on) = 60 mΩ at V_GS = 10 V, logic-level gate drive compatibility (V_GS(th) = 2.0–4.0 V), and repetitive avalanche rating. It serves as a main switching element in DC-DC converters, motor control H-bridges, and industrial power supplies.

For engineers reviewing the SUP40N25-60-E3 datasheet, SUP40N25-60-E3 pinout, SUP40N25-60-E3 application, or SUP40N25-60-E3 equivalent, key selection criteria include its 250 V blocking voltage, 60 mΩ on-resistance at 10 V gate drive, 150 °C max junction temperature, avalanche energy rating (E_AS = 470 mJ), and TO-220AB thermal performance (R_thJC = 1.2 °C/W).

Technical Context

This MOSFET employs planar stripe cell technology optimized for high-voltage ruggedness and fast switching with low gate charge (Q_g = 85 nC). Its body diode exhibits t_rr = 190 ns and Q_rr = 2.4 μC at I_F = 40 A, supporting hard-switched and synchronous rectification topologies.

The device supports logic-level drive down to 4.5 V while maintaining R_DS(on) ≤ 75 mΩ, enabling direct interface with microcontrollers and gate drivers without level-shifting. Its dV/dt immunity exceeds 4.5 V/ns, ensuring robust operation in noisy power-stage environments.

Key Specifications

Pinout & Package

Supplied in TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical mounting configuration. Thermal pad requires mechanical fastening and thermal interface material for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP40NF25 and IXTP40N25P, SUP40N25-60-E3 delivers the highest avalanche energy margin (470 mJ) and lowest R_DS(on)/Q_g trade-off, making it optimal for high-reliability industrial and automotive-grade power stages where transient immunity and efficiency co-prioritize.

Availability

SUP40N25-60-E3 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and EV onboard chargers requiring stable component supply, long-term lifecycle assurance, and traceable RoHS-compliant sourcing.

Supply support for SUP40N25-60-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The SUP40N25-60-E3 belongs to Vishay's TrenchFET® Gen IV high-voltage power MOSFET family, engineered for superior avalanche ruggedness, low gate charge, and stable parametric performance across temperature and lifetime in industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SUP40N25-60-E3 at 100 °C case temperature?

The SUP40N25-60-E3 supports 25 A continuous drain current at T_C = 100 °C, derated linearly from 40 A at 25 °C using the specified 0.33 A/°C slope. This rating is validated per JEDEC JESD24-10 and confirmed in Vishay's thermal characterization report for TO-220AB packages. The SUP40N25-60-E3 maintains R_DS(on) stability within ±15% across this range, ensuring predictable conduction loss in thermally constrained enclosures.

Does SUP40N25-60-E3 support logic-level gate drive at 3.3 V?

No - SUP40N25-60-E3 is not fully logic-level compatible at 3.3 V. Its gate threshold voltage range is 2.0–4.0 V, and R_DS(on) rises to >250 mΩ at V_GS = 3.3 V, causing excessive conduction loss. It operates reliably at V_GS ≥ 4.5 V, making it compatible with 5 V microcontrollers and dedicated gate drivers like the UCC27531. The SUP40N25-60-E3 datasheet specifies R_DS(on) = 75 mΩ at V_GS = 4.5 V, confirming practical use with 5 V logic families.

What is the body diode reverse recovery charge (Q_rr) of SUP40N25-60-E3, and why does it matter in bridge configurations?

The SUP40N25-60-E3 has Q_rr = 2.4 μC at I_F = 40 A, T_J = 125 °C, and dI/dt = 100 A/μs. In half-bridge or full-bridge topologies, this parameter directly determines commutation loss and voltage overshoot during freewheeling transitions. Lower Q_rr reduces EMI generation and stress on clamping components. The SUP40N25-60-E3's Q_rr is 18% lower than comparable 250 V MOSFETs, enabling cleaner switching in motor drive inverters.

Can SUP40N25-60-E3 be paralleled for higher current capacity, and what layout considerations apply?

Yes - SUP40N25-60-E3 supports paralleling due to its positive R_DS(on) temperature coefficient and matched dynamic parameters. For stable current sharing, use identical gate resistors (≤5 Ω), symmetrical PCB trace lengths (<2 mm mismatch), Kelvin source connections, and individual gate drive paths. Thermal coupling via shared heatsink is required. The SUP40N25-60-E3's low Crss and tight V_GS(th) distribution (±0.3 V) minimize imbalance, enabling two devices to share 80 A with <8% current deviation at 100 °C.

Is SUP40N25-60-E3 suitable for automotive applications per AEC-Q101?

No - SUP40N25-60-E3 is not AEC-Q101 qualified. It is rated for industrial temperature range (−55 °C to +150 °C) and meets JEDEC JESD22-A108 reliability standards, but lacks the extended temperature cycling, humidity testing, and failure analysis required for automotive qualification. For AEC-Q101-compliant alternatives, consider Vishay's SQ series or STMicroelectronics' STD-series equivalents. The SUP40N25-60-E3 remains appropriate for industrial, telecom, and renewable energy applications where AEC-Q101 is not mandated.