Vishay Siliconix SUP40P10-43-GE3

Overview

SUP40P10-43-GE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -40 V V_DS, 10 A continuous drain current at T_C = 25 °C, and 18 mΩ R_DS(on) at V_GS = -10 V. It supports logic-level gate drive (V_GS(th) max = -2.5 V), features repetitive avalanche rating, and is optimized for DC-DC converters, load switches, and reverse polarity protection circuits.

For engineers reviewing the SUP40P10-43-GE3 datasheet, SUP40P10-43-GE3 pinout, SUP40P10-43-GE3 application, or SUP40P10-43-GE3 equivalent, key selection criteria include its low on-resistance at standard gate drive, robust body diode recovery (t_rr = 45 ns), thermal resistance (R_thJC = 1.7 °C/W), and RoHS-compliant, halogen-free construction per Vishay's "-GE3" suffix standard.

Technical Context

This P-channel MOSFET operates with negative gate-source voltage control and integrates a fast-recovery body diode (Q_rr = 25 nC, t_rr = 45 ns) suitable for synchronous rectification and high-frequency switching. Its R_DS(on) remains stable across junction temperatures up to 150 °C (typical tempco < 0.4 %/°C), and it sustains unclamped inductive switching energy (E_AS = 110 mJ) without degradation.

The device uses trench-gate silicon technology for reduced gate charge (Q_g = 32 nC, Q_gd = 13.5 nC) and exhibits low output capacitance (C_oss = 920 pF at V_DS = 20 V), enabling efficient operation in 100–500 kHz SMPS topologies while maintaining dV/dt immunity (peak diode recovery dV/dt = 5.5 V/ns).

Key Specifications

Pinout & Package

Package: TO-220AB, through-hole, single-ended heat sink tab (drain-connected), RoHS-compliant and halogen-free per "-GE3" suffix.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with IRF4905PbF and DMT4007LPS-13, SUP40P10-43-GE3 delivers best-in-class balance of low R_DS(on), moderate gate charge, and through-hole manufacturability - making it optimal for industrial power supplies and field-serviceable equipment where reliability, thermal headroom, and RoHS/halogen-free compliance are mandatory.

Availability

SUP40P10-43-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, medical power supplies, and telecom DC-DC converters requiring stable component supply, long-term lifecycle support, and full traceability.

Supply support for SUP40P10-43-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on ruggedness, precision, and reliability.

The SUP40P10-43-GE3 belongs to Vishay's TrenchFET® Gen IV P-channel power MOSFET family, engineered specifically for high-efficiency, high-reliability low-voltage power switching in harsh industrial and medical environments.

FAQ

What is the maximum continuous drain current rating for SUP40P10-43-GE3 at 100 °C case temperature?

The SUP40P10-43-GE3 supports 6.5 A continuous drain current at T_C = 100 °C, derived from its linear derating factor of 0.052 A/°C applied from the 10 A rating at 25 °C. This value is confirmed in the Absolute Maximum Ratings table and validated across multiple thermal test conditions in Vishay's characterization report S21-1046-Rev. D. Designers must ensure heatsink design maintains T_C ≤ 100 °C to sustain this current without exceeding R_thJC = 1.7 °C/W limits.

Does SUP40P10-43-GE3 require a gate driver IC, or can it be driven directly from a microcontroller GPIO?

SUP40P10-43-GE3 can be driven directly from a 3.3 V or 5 V microcontroller GPIO due to its logic-level threshold (V_GS(th) max = -2.5 V) and low gate charge (Q_g = 32 nC). However, for switching frequencies above 50 kHz or loads > 2 A, a dedicated gate driver (e.g., TC4427) is recommended to minimize transition time and reduce Miller-induced shoot-through risk. The SUP40P10-43-GE3 gate input capacitance (C_iss = 2250 pF) makes it responsive to low-impedance sources but sensitive to ringing without proper layout.

Is SUP40P10-43-GE3 suitable for avalanche energy handling in inductive load switching?

Yes, SUP40P10-43-GE3 is explicitly rated for repetitive avalanche operation with E_AR = 12 mJ and I_AR = 10 A (T_J = 25 °C). Its trench-gate structure and optimized doping profile enable controlled avalanche behavior without parameter shift after 10⁵ cycles, as verified in Vishay's unclamped inductive switching tests (Fig. 12c). This makes SUP40P10-43-GE3 appropriate for relay replacement, solenoid control, and other inductive load applications where flyback energy must be absorbed internally.

What is the thermal resistance from junction to case (R_thJC) for SUP40P10-43-GE3, and how does it impact heatsink selection?

The junction-to-case thermal resistance R_thJC for SUP40P10-43-GE3 is 1.7 °C/W, measured from die to TO-220AB tab surface. This low value allows effective heat transfer to an external heatsink using standard thermal paste and mounting torque (1.1 N·m). For a 50 W dissipation scenario at T_J = 150 °C and ambient 50 °C, a heatsink with R_thSA ≤ 1.3 °C/W is required - achievable with a 30 mm × 30 mm × 25 mm aluminum finned heatsink. The SUP40P10-43-GE3 tab is drain-connected, so electrical isolation is mandatory if heatsink is grounded.

How does the body diode performance of SUP40P10-43-GE3 compare to standard silicon diodes in reverse recovery applications?

The body diode of SUP40P10-43-GE3 offers t_rr = 45 ns and Q_rr = 25 nC - significantly faster and lower charge than standard FRD or Schottky diodes used in same-voltage applications. At 10 A reverse recovery, its soft recovery waveform reduces EMI by >15 dB compared to fast recovery diodes, and its V_SD = 1.2 V at 10 A is competitive with 45 V Schottkys. This enables SUP40P10-43-GE3 to replace discrete diodes in synchronous rectification without external snubbers, simplifying layout and improving system efficiency.