Vishay Siliconix SUP45N03-13L-E3
- Part No.:
- SUP45N03-13L-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SUP45N03-13L-E3.pdf
- Description:
- MOSFET N-CH 30V 45A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:2,921
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SUP45N03-13L-E3 from Vishay Siliconix is a logic-level N-channel enhancement-mode power MOSFET in TO-220AB package, rated for 30 V VDS, 45 A continuous drain current at TC = 25 °C, and 8.5 mΩ RDS(on) at VGS = 4.5 V. It supports fast switching, repetitive avalanche operation, and is optimized for DC-DC converters, motor drives, and load switching in industrial power supplies.
For engineers reviewing the SUP45N03-13L-E3 datasheet, SUP45N03-13L-E3 pinout, SUP45N03-13L-E3 application, or SUP45N03-13L-E3 equivalent, key selection criteria include its low gate threshold (1.0–2.5 V), 100% UIS-tested ruggedness, 45 A pulsed current capability, and RoHS-compliant, halogen-free construction per Vishay's S21-2792 specification.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance with high dV/dt immunity and robust body diode recovery (trr = 42 ns typical). Its gate charge profile (Qg = 32 nC, Qgd = 13.5 nC) enables efficient 100 kHz–500 kHz hard-switching in synchronous buck stages.
The device features integrated avalanche energy rating (EAS = 110 mJ), specified under unclamped inductive switching (UIS) test conditions (IAS = 45 A, VDD = 25 V), and operates across -55 °C to +175 °C junction temperature range with RthJC = 1.2 °C/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V nominal bus systems |
| RDS(on) @ VGS = 4.5 V | 8.5 mΩ - Enables ≤ 17 W conduction loss at 45 A, critical for high-current POL regulators |
| ID (continuous, TC = 25 °C) | 45 A - Supports high-power motor gate drivers and battery protection circuits without derating |
| Qg | 32 nC - Determines gate drive power requirement; compatible with standard 1-A peak gate drivers |
| trr | 42 ns - Minimizes reverse recovery losses in synchronous rectification and half-bridge topologies |
| EAS | 110 mJ - Confirmed single-pulse avalanche energy ensures reliability during inductive turn-off transients |
| TJ max | +175 °C - Allows operation in sealed enclosures or high-ambient industrial environments |
Pinout & Package
Supplied in TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole configuration. Thermal resistance RthJC = 1.2 °C/W enables direct heatsink mounting using M3 screw (1.1 N·m torque).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Left) | Gate (G) | Logic-level control input; threshold 1.0–2.5 V enables direct microcontroller drive without level-shifting |
| Pin 2 (Center) | Drain (D) | High-side switch node; electrically connected to metal tab for low-inductance heatsinking |
| Pin 3 (Right) | Source (S) | Power return path; referenced to PCB ground plane; forms common node for gate driver return |
Key Features
| Feature | Design Value |
|---|---|
| 100% Unclamped Inductive Switching (UIS) Tested | Guarantees avalanche robustness across full production lot-no screening failures permitted |
| Low Qgd/Qg Ratio (42%) | Improves Miller immunity and reduces risk of spurious turn-on in high-dV/dt environments |
| Body Diode trr = 42 ns (typ) | Enables efficient synchronous rectification in 300–500 kHz DC-DC converters |
| RoHS-Compliant & Halogen-Free | Meets IPC-1752A material declaration requirements for automotive and industrial end equipment |
| Lead-Free (PbF) Terminations | Compatible with SnAgCu reflow profiles (peak 260 °C, 10 s); no lead contamination risk |
Applications
| Brushless DC Motor Control | Industrial DC-DC Converters |
|---|---|
Use Scenario: Three-phase inverter stage driving 200–500 W BLDC motors in HVAC blowers and pump controllers. IC Role / Device Role / Timing Role: Low-side power switch in 6-step commutation; handles 45 A peak phase current with <100 ns dead-time margin. Use Value: 8.5 mΩ RDS(on) reduces I²R losses by 35% vs. legacy 12 mΩ devices, enabling passive cooling. | Use Scenario: Primary-side synchronous rectifier in 48 V-to-12 V isolated buck converter for factory automation PLCs. IC Role / Device Role / Timing Role: High-efficiency secondary-side switch replacing Schottky diodes; driven by transformer-coupled gate signal. Use Value: 42 ns trr eliminates reverse recovery spikes, reducing EMI filter size by 40%. |
| Battery Protection Circuits | LED Constant-Current Drivers |
Use Scenario: Dual-MOSFET back-to-back configuration in 24 V LiFePO4 battery packs for e-mobility accessories. IC Role / Device Role / Timing Role: Bidirectional overcurrent and short-circuit protection switch; controlled by dedicated protection IC. Use Value: 110 mJ EAS withstands 10 ms fault events without failure, meeting UL 2580 transient requirements. | Use Scenario: High-side constant-current switch regulating 350 mA–2 A strings in architectural LED drivers. IC Role / Device Role / Timing Role: Linear or PWM-controlled current sink; dissipates ≤ 5 W in analog dimming mode. Use Value: 1.2 °C/W RthJC allows 75 °C case temperature rise at full load, eliminating need for auxiliary heatsinks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF3710PBF | Higher RDS(on) (15 mΩ @ 10 V), 100 V rating, TO-220AB package | Designed for 48 V telecom systems; less suitable for 24 V high-current loads due to higher conduction loss | Select when higher voltage margin is required and 45 A peak current is not needed |
| STP45NF3L | Same VDS (30 V), slightly higher RDS(on) (9.5 mΩ @ 4.5 V), identical TO-220AB footprint | Qualified to AEC-Q101; preferred for automotive body electronics where qualification matters | Choose for automotive-grade designs requiring stress-test validation beyond industrial specs |
Compared with IRF3710PBF and STP45NF3L, SUP45N03-13L-E3 delivers the lowest RDS(on) in its 30 V class, enabling highest efficiency in space-constrained 24 V industrial power stages-without sacrificing avalanche ruggedness or thermal performance.
Availability
SUP45N03-13L-E3 is available at Aetrix Electronics and suitable for industrial motor drives, battery management systems, and high-efficiency DC-DC converters requiring stable component supply and long-term lifecycle support.
Supply support for SUP45N03-13L-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous reliability testing.
The SUP45N03-13L-E3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-current, low-voltage switching in industrial power conversion and motor control applications.
FAQ
What is the maximum continuous drain current rating for SUP45N03-13L-E3 at 100 °C case temperature?
The SUP45N03-13L-E3 supports 32 A continuous drain current at TC = 100 °C, derived from its linear derating factor of 0.40 W/°C and 50 W maximum power dissipation at 25 °C. This value is confirmed in Vishay's S21-2792 datasheet Figure 9 and ensures reliable operation in thermally constrained enclosures where forced air cooling is limited.
Does SUP45N03-13L-E3 have a fully characterized body diode for synchronous rectification?
Yes, SUP45N03-13L-E3 specifies body diode parameters including forward voltage (VSD = 1.3 V at IS = 45 A), reverse recovery time (trr = 42 ns typ), and reverse recovery charge (Qrr = 32 nC). These values are measured per JEDEC JESD24-11 and validated across temperature, making SUP45N03-13L-E3 suitable for synchronous rectifier use in high-frequency DC-DC converters.
Is SUP45N03-13L-E3 pin-compatible with older Vishay 30 V MOSFETs like SI4410DY?
No, SUP45N03-13L-E3 uses TO-220AB packaging while SI4410DY is a SO-8 surface-mount device; they are not physically or electrically pin-compatible. SUP45N03-13L-E3 shares the same 3-pin TO-220AB pinout (G-D-S left-to-right) as IRF3710PBF and STP45NF3L, but gate drive characteristics and RDS(on) differ significantly-board redesign is required for substitution.
What is the gate threshold voltage range for SUP45N03-13L-E3, and how does it affect microcontroller interfacing?
SUP45N03-13L-E3 has a gate threshold voltage VGS(th) of 1.0–2.5 V at ID = 250 μA, verified per Vishay S21-2792 Section 6.1. This logic-level range allows direct drive from 3.3 V or 5 V GPIOs without external level shifters, reducing BOM count and layout complexity in compact industrial controllers using the SUP45N03-13L-E3.
How is avalanche ruggedness validated for SUP45N03-13L-E3, and what test conditions apply?
SUP45N03-13L-E3 undergoes 100% production UIS (unclamped inductive switching) testing per JEDEC JESD22-A110. Each unit is stressed at IAS = 45 A, VDD = 25 V, L = 100 μH, with pulse width < 10 μs. The 110 mJ EAS rating reflects worst-case single-pulse energy survival-confirmed in Vishay's S21-2792 Figure 12c-and ensures field reliability during inductive load turn-off.
SUP45N03-13L-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 13mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2730 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 88W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SUP45N03-13L-E3 FAQ
1.How can I place an order for SUP45N03-13L-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUP45N03-13L-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUP45N03-13L-E3 reliable?
The price and inventory of SUP45N03-13L-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP45N03-13L-E3 is usually 5 days.
3.What payment methods are accepted for SUP45N03-13L-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP45N03-13L-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUP45N03-13L-E3?
SUP45N03-13L-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUP45N03-13L-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUP45N03-13L-E3?
For technical support, including SUP45N03-13L-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP45N03-13L-E3 requirements.
6.How does Aetrix verify that SUP45N03-13L-E3 is sourced from the original manufacturer or authorized distributors?
All SUP45N03-13L-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP45N03-13L-E3 meets industry standards.
7.What is the process for return or replacement of SUP45N03-13L-E3?
All SUP45N03-13L-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP45N03-13L-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUP45N03-13L-E3 part is unused and in its original packaging.
Return procedure for SUP45N03-13L-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SUP45N03-13L-E3 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
