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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP45P03-09-GE3

Name: SUP45P03-09-GE3
Brand: Vishay Siliconix
SKU: SUP45P03-09-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP45P03-09-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP45P03-09-GE3.pdf

Description:: MOSFET P-CH 30V 45A TO220AB

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Product details

Overview

SUP45P03-09-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -30 V drain-source voltage, 0.0087 Ω R_DS(on) at V_GS = -10 V, and -45 A continuous drain current at T_C = 25 °C. It serves as a high-current load switch in DC/DC converters and power distribution circuits with robust avalanche capability (61 mJ) and TO-220AB packaging for heatsink mounting.

For engineers reviewing the SUP45P03-09-GE3 datasheet, SUP45P03-09-GE3 pinout, SUP45P03-09-GE3 application, or SUP45P03-09-GE3 equivalent, key selection criteria include verified R_DS(on) at -4.5 V (-0.0150 Ω), total gate charge (60 nC typ.), junction-to-case thermal resistance (1.7 °C/W), and SOA-limited pulsed current handling (-100 A).

Technical Context

This device uses trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Q_g (60 nC typ.) and low C_iss (2700 pF). Its gate threshold voltage range (-1 V to -2.5 V) ensures reliable turn-on with standard logic-level negative gate drive.

The integrated body diode supports synchronous rectification in buck converters, with V_SD = -0.8 V typ. at -10 A and trr = 27 ns typ., enabling efficient reverse recovery in high-frequency power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage in high-side switch configurations
R_DS(on) @ V_GS = -10 V	0.0087 Ω - Enables <1 W conduction loss at -20 A, suitable for 50 W+ power switches
R_DS(on) @ V_GS = -4.5 V	0.0150 Ω - Supports direct interface with 5 V microcontroller outputs without level shifting
Q_g	60 nC typ. - Determines gate driver power requirement and switching speed in hard-switched topologies
I_D (continuous)	-45 A @ T_C = 25 °C - Requires external heatsink for sustained operation above ambient
E_AS	61 mJ - Withstands single-pulse inductive energy in motor drive or relay snubbing applications
R_thJC	1.7 °C/W - Enables precise junction temperature estimation when mounted to heatsink

Pinout & Package

Package: TO-220AB - Through-hole, insulated tab, heatsink-mountable with M3 screw hole; dimensions per Vishay Doc #71195 (L = 13.35–14.02 mm, D = 14.85–15.49 mm, E = 10.04–10.51 mm).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path from source to load	Connected to package tab - electrically tied to drain; requires isolation from heatsink unless floating drain topology
Source (S)	Reference node for gate drive and current return	Common connection point for load return and gate driver ground; defines V_GS reference
Gate (G)	Control terminal for channel modulation	High-impedance input requiring <2.5 Ω series resistance to damp ringing; sensitive to ESD

Key Features

Feature	Design Value
TrenchFET® construction	Delivers lowest R_DS(on) per die area among Vishay's -30 V P-channel portfolio, reducing board space in high-density power modules
100 % R_g and UIS tested	Ensures gate resistance consistency (0.5–5 Ω) and validated unclamped inductive switching robustness across production lots
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, supporting environmentally regulated industrial and automotive programs
Body diode with low V_SD	-0.8 V typical forward drop enables use in freewheeling paths without external Schottky diode in low-voltage DC/DC designs

Applications

High-Current Load Switch	DC/DC Converter High-Side Switch
Use Scenario: Power sequencing in industrial PLC I/O modules where 24 V rail must be enabled/disabled under microcontroller control. IC Role / Device Role / Timing Role: P-channel high-side switch controlling main 24 V supply to downstream circuitry. Use Value: Low R_DS(on) (0.0087 Ω) limits voltage drop to <1 V at 40 A, preserving regulation margin while supporting hot-swap capability.	Use Scenario: Synchronous buck converter output stage operating at 300 kHz with 12 V input and 5 V/20 A output. IC Role / Device Role / Timing Role: High-side P-channel MOSFET in non-isolated step-down regulator with body diode conducting during low-side conduction phase. Use Value: Verified trr = 27 ns and Q_rr = 20 nC minimize switching losses and EMI during body diode commutation.
Motor Drive Protection Switch	Hot-Swap Power Controller
Use Scenario: Bidirectional 24 V brushed DC motor control with dynamic braking via H-bridge configuration. IC Role / Device Role / Timing Role: Upper-leg P-channel switch absorbing inductive kickback during PWM off-time. Use Value: Single-pulse avalanche rating of 61 mJ allows safe clamping of L·di/dt transients without external TVS.	Use Scenario: Backplane power management in telecom line cards requiring inrush current limiting and fault isolation. IC Role / Device Role / Timing Role: Inrush-controlled high-side switch with soft-start via gate resistor network. Use Value: Guaranteed V_GS(th) (-1 to -2.5 V) enables predictable turn-on timing using RC-based gate ramp circuits.

High-Current Load Switch

DC/DC Converter High-Side Switch

Use Scenario: Power sequencing in industrial PLC I/O modules where 24 V rail must be enabled/disabled under microcontroller control.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling main 24 V supply to downstream circuitry.

Use Value: Low R_DS(on) (0.0087 Ω) limits voltage drop to <1 V at 40 A, preserving regulation margin while supporting hot-swap capability.

Use Scenario: Synchronous buck converter output stage operating at 300 kHz with 12 V input and 5 V/20 A output.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET in non-isolated step-down regulator with body diode conducting during low-side conduction phase.

Use Value: Verified trr = 27 ns and Q_rr = 20 nC minimize switching losses and EMI during body diode commutation.

Motor Drive Protection Switch

Hot-Swap Power Controller

Use Scenario: Bidirectional 24 V brushed DC motor control with dynamic braking via H-bridge configuration.

IC Role / Device Role / Timing Role: Upper-leg P-channel switch absorbing inductive kickback during PWM off-time.

Use Value: Single-pulse avalanche rating of 61 mJ allows safe clamping of L·di/dt transients without external TVS.

Use Scenario: Backplane power management in telecom line cards requiring inrush current limiting and fault isolation.

IC Role / Device Role / Timing Role: Inrush-controlled high-side switch with soft-start via gate resistor network.

Use Value: Guaranteed V_GS(th) (-1 to -2.5 V) enables predictable turn-on timing using RC-based gate ramp circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PBF	R_DS(on) = 0.02 Ω @ -10 V; Q_g = 110 nC; TO-220 package	Higher conduction loss and slower switching; less suitable for >200 kHz DC/DC	Select when cost sensitivity outweighs efficiency and frequency requirements
DMT3006LPS-13	R_DS(on) = 0.0058 Ω @ -10 V; SO-8 package; no insulated tab	Lower R_DS(on) but limited to 30 A continuous; unsuitable for heatsink mounting	Select for space-constrained PCBs where thermal design permits surface-mount solution

Compared with IRF4905PBF and DMT3006LPS-13, SUP45P03-09-GE3 delivers optimal balance of low R_DS(on), moderate Q_g, and TO-220AB mechanical robustness-making it preferred for industrial-grade 45 A load switching where thermal management and reliability are prioritized over footprint size.

Availability

SUP45P03-09-GE3 is available at Aetrix Electronics and suitable for high-current load switching, DC/DC converter high-side control, and motor drive protection applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for SUP45P03-09-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and high-reliability manufacturing.

The SUP45P03-09-GE3 belongs to Vishay's TrenchFET® P-channel power MOSFET product line, engineered for high-efficiency, high-current switching in industrial power supplies, motor controls, and battery-powered systems.

FAQ

What is the maximum continuous drain current for SUP45P03-09-GE3 at 70 °C case temperature?

The SUP45P03-09-GE3 supports -45 A continuous drain current at T_C = 70 °C, matching its rating at 25 °C due to derating curves defined in the Safe Operating Area (SOA) plot. This reflects its robust thermal design with R_thJC = 1.7 °C/W and package-limited conduction capability.

Does SUP45P03-09-GE3 require a gate driver IC for 5 V microcontroller interfacing?

No, SUP45P03-09-GE3 is fully compatible with 5 V logic-level gate drive: its V_GS(th) range (-1 V to -2.5 V) and R_DS(on) = 0.0150 Ω at V_GS = -4.5 V ensure strong enhancement-mode turn-on without external level shifting, though a 10–100 Ω series gate resistor is recommended for ringing suppression.

What is the avalanche energy rating of SUP45P03-09-GE3 and how is it validated?

The SUP45P03-09-GE3 has a single-pulse avalanche energy rating of 61 mJ, measured under standardized test conditions (L = 0.1 mH, I_AS = -35 A). This rating is 100 % production-tested per Vishay's UIS (unclamped inductive switching) qualification, ensuring consistent ruggedness across all units.

Can SUP45P03-09-GE3 be used in synchronous rectification topologies?

Yes, SUP45P03-09-GE3 supports synchronous rectification via its integrated body diode, which exhibits V_SD = -0.8 V typ. at -10 A and t_rr = 27 ns typ. These characteristics enable efficient freewheeling in buck converters up to ~500 kHz, provided gate timing avoids shoot-through.

Is the TO-220AB package of SUP45P03-09-GE3 electrically insulated?

No, the TO-220AB package of SUP45P03-09-GE3 has an uninsulated drain-connected tab. The drain terminal is directly tied to the metal tab, requiring electrical isolation (e.g., mica washer or silicone pad) when mounted to a grounded heatsink to prevent short circuits.

SUP45P03-09-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2700 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 73.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP45P03-09-GE3 FAQ

1.How can I place an order for SUP45P03-09-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP45P03-09-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP45P03-09-GE3 reliable?

The price and inventory of SUP45P03-09-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP45P03-09-GE3 is usually 5 days.

3.What payment methods are accepted for SUP45P03-09-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP45P03-09-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP45P03-09-GE3?

SUP45P03-09-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP45P03-09-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP45P03-09-GE3?

For technical support, including SUP45P03-09-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP45P03-09-GE3 requirements.

6.How does Aetrix verify that SUP45P03-09-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP45P03-09-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP45P03-09-GE3 meets industry standards.

7.What is the process for return or replacement of SUP45P03-09-GE3?

All SUP45P03-09-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP45P03-09-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP45P03-09-GE3 part is unused and in its original packaging.

Return procedure for SUP45P03-09-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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