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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP50020E-GE3

Name: SUP50020E-GE3
Brand: Vishay Siliconix
SKU: SUP50020E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP50020E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP50020E-GE3.pdf

Description:: MOSFET N-CH 60V 120A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:6,000

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Product details

Overview

SUP50020E-GE3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® power MOSFET optimized for high-current switching in DC/DC converters and motor drives, featuring R_DS(on) = 2.0 mΩ at V_GS = 10 V, 120 A continuous drain current, and logic-level gate drive compatibility down to 7.5 V.

For engineers reviewing the SUP50020E-GE3 datasheet, SUP50020E-GE3 pinout, SUP50020E-GE3 application, or SUP50020E-GE3 equivalent, this device is selected for high-efficiency synchronous rectification, battery management systems requiring low conduction loss, and industrial motor control where thermal robustness up to 175 °C junction temperature is critical.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance and fast switching with Q_gd/Q_gs ratio < 0.25, enabling reduced switching losses in hard-switched topologies. Its 100 % R_g and UIS tested construction ensures gate robustness and avalanche reliability under transient overloads.

The device operates within a -55 °C to +175 °C junction temperature range and delivers 281 mJ single-pulse avalanche energy (E_AS) at L = 0.1 mH. Thermal resistance R_thJC = 0.4 °C/W supports high-power dissipation when mounted on heatsinks via its TO-220AB package's exposed drain tab.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for use in ≤60 V bus applications like 48 V power tools and telecom PSUs.
R_DS(on) max	2.4 mΩ at V_GS = 10 V - Enables ≤0.3 W conduction loss at 120 A, critical for high-current secondary-side rectification.
I_D continuous	120 A at T_J = 150 °C - Sustains full rated current with proper heatsinking, supporting compact 1–3 kW converter designs.
Q_g typ	128 nC - Determines gate driver power requirement; compatible with standard 1–2 A peak gate drivers in high-frequency operation.
T_J max	+175 °C - Allows operation in harsh environments (e.g., automotive under-hood, industrial motor drives) without derating.
R_thJC	0.4 °C/W - Enables efficient heat transfer from die to heatsink, reducing thermal bottleneck in high-power switching nodes.

Pinout & Package

Supplied in TO-220AB package with isolated mounting hole, featuring three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain, requiring insulating hardware when mounted to grounded heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-current output path and thermal interface	Exposed copper tab serves as primary current path and heatsink interface; must be electrically isolated if heatsink is grounded.
Source (Pin 1)	Reference node for gate drive and current return	Low-inductance source connection essential for stable gate control and minimizing shoot-through risk in half-bridge configurations.
Gate (Pin 2)	Control input for channel conduction	Logic-compatible input (V_GS(th) = 2–4 V) enables direct drive from microcontrollers or gate drivers without level-shifting.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 2.0 mΩ R_DS(on) at 10 V while maintaining rugged avalanche performance (E_AS = 281 mJ).
Logic-level gate drive	Operates fully enhanced at V_GS = 7.5 V, eliminating need for dedicated gate driver in low-voltage control circuits.
100 % R_g and UIS tested	Ensures gate resistance consistency and verified unclamped inductive switching capability for reliable hard-switching operation.
Lead (Pb)-free and halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709B, supporting environmentally compliant industrial and consumer production.

Applications

Secondary Synchronous Rectification	Power Tool Motor Drive
Use Scenario: High-efficiency 48 V output stage in isolated LLC resonant converters for server PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency >95 %. Use Value: 2.4 mΩ R_DS(on) cuts rectifier loss by >60 % vs. 40 V Schottky, directly increasing system efficiency and reducing thermal load.	Use Scenario: H-bridge motor controller in cordless drills and impact drivers operating from 18–60 V Li-ion packs. IC Role / Device Role / Timing Role: High-current quadrant switch handling bidirectional motor current up to 120 A peak. Use Value: 175 °C T_J rating allows sustained high-torque operation without thermal shutdown, extending tool runtime under load.
Battery Management System Switch	DC/AC Inverter Half-Bridge
Use Scenario: Main discharge/charge FET in 48 V ESS and UPS battery packs with active cell balancing. IC Role / Device Role / Timing Role: Bidirectional current switch controlling pack connection to load/charger with integrated body diode conduction. Use Value: 0.8–1.5 V V_SD forward voltage enables low-loss reverse conduction during charge cycles, minimizing power loss in BMS protection paths.	Use Scenario: High-side switch in 3 kW solar microinverter DC link stage converting 400 V DC to 230 V AC. IC Role / Device Role / Timing Role: Fast-switching power switch in hard-switched half-bridge topology with 128 nC total gate charge. Use Value: Low Q_gd/Q_gs ratio (< 0.25) suppresses Miller-induced turn-on, improving noise immunity and commutation reliability at 50–100 kHz.

Secondary Synchronous Rectification

Power Tool Motor Drive

Use Scenario: High-efficiency 48 V output stage in isolated LLC resonant converters for server PSUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency >95 %.

Use Value: 2.4 mΩ R_DS(on) cuts rectifier loss by >60 % vs. 40 V Schottky, directly increasing system efficiency and reducing thermal load.

Use Scenario: H-bridge motor controller in cordless drills and impact drivers operating from 18–60 V Li-ion packs.

IC Role / Device Role / Timing Role: High-current quadrant switch handling bidirectional motor current up to 120 A peak.

Use Value: 175 °C T_J rating allows sustained high-torque operation without thermal shutdown, extending tool runtime under load.

Battery Management System Switch

DC/AC Inverter Half-Bridge

Use Scenario: Main discharge/charge FET in 48 V ESS and UPS battery packs with active cell balancing.

IC Role / Device Role / Timing Role: Bidirectional current switch controlling pack connection to load/charger with integrated body diode conduction.

Use Value: 0.8–1.5 V V_SD forward voltage enables low-loss reverse conduction during charge cycles, minimizing power loss in BMS protection paths.

Use Scenario: High-side switch in 3 kW solar microinverter DC link stage converting 400 V DC to 230 V AC.

IC Role / Device Role / Timing Role: Fast-switching power switch in hard-switched half-bridge topology with 128 nC total gate charge.

Use Value: Low Q_gd/Q_gs ratio (< 0.25) suppresses Miller-induced turn-on, improving noise immunity and commutation reliability at 50–100 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 3.2 mΩ @ 10 V; higher Q_g = 160 nC; same TO-220AB package	Lower current density and slower switching limit use in >100 kHz converters	Select when lower cost is prioritized over peak efficiency in ≤50 kHz motor drives.
STP120N6F6	R_DS(on) = 2.5 mΩ @ 10 V; TJ max = 175 °C; Q_g = 110 nC; TO-220FP package (no isolated tab)	Non-isolated tab requires insulated mounting hardware, limiting heatsink flexibility	Prefer when footprint compatibility with STP120N6F6 is required and thermal design accommodates non-isolated tab.

Compared with IRFB4115PBF and STP120N6F6, SUP50020E-GE3 offers the lowest R_DS(on) and best Q_gd/Q_gs ratio, making it optimal for high-frequency, high-current synchronous rectification and motor control where conduction and switching losses must both be minimized.

Availability

SUP50020E-GE3 is available at Aetrix Electronics and suitable for power supply secondary rectification, battery management systems, and motor drive applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for SUP50020E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SUP50020E-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered for high-current, high-efficiency switching in industrial, computing, and portable power systems.

FAQ

What is the maximum continuous drain current rating for SUP50020E-GE3?

The SUP50020E-GE3 is rated for 120 A continuous drain current at T_J = 150 °C with proper heatsinking. This rating assumes case temperature (T_C) ≤ 70 °C and is limited by package thermal resistance (R_thJC = 0.4 °C/W). At T_C = 25 °C, the device sustains 120 A continuously but must be derated per the SOA curve above 100 V_DS.

Does SUP50020E-GE3 support logic-level gate drive?

Yes, SUP50020E-GE3 supports logic-level gate drive with a gate threshold voltage (V_GS(th)) of 2–4 V and full enhancement at V_GS = 7.5 V. Its R_DS(on) = 2.7 mΩ at 7.5 V enables direct interfacing with 3.3 V or 5 V microcontrollers and gate drivers without level-shifting circuitry.

What is the avalanche energy rating of SUP50020E-GE3?

SUP50020E-GE3 is rated for 281 mJ single-pulse avalanche energy (E_AS) at L = 0.1 mH and T_J = 25 °C. This rating reflects validated unclamped inductive switching (UIS) capability, confirming robustness against inductive kickback in motor drive and relay driving applications.

Is SUP50020E-GE3 lead-free and halogen-free?

Yes, SUP50020E-GE3 is explicitly specified as lead (Pb)-free and halogen-free per Vishay's material compliance documentation (Doc. #99912), meeting RoHS Directive 2011/65/EU and JEDEC JS709B standards for environmentally compliant manufacturing.

What package type does SUP50020E-GE3 use, and is the drain tab electrically isolated?

SUP50020E-GE3 uses the TO-220AB package with an exposed drain tab. The tab is electrically connected to the Drain terminal and is not isolated - it must be mounted using insulating hardware (e.g., mica washer + shoulder washer) when attached to a grounded heatsink to prevent short circuits.

SUP50020E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 128 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP50020E-GE3 FAQ

1.How can I place an order for SUP50020E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP50020E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP50020E-GE3 reliable?

The price and inventory of SUP50020E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP50020E-GE3 is usually 5 days.

3.What payment methods are accepted for SUP50020E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP50020E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP50020E-GE3?

SUP50020E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP50020E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP50020E-GE3?

For technical support, including SUP50020E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP50020E-GE3 requirements.

6.How does Aetrix verify that SUP50020E-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP50020E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP50020E-GE3 meets industry standards.

7.What is the process for return or replacement of SUP50020E-GE3?

All SUP50020E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP50020E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP50020E-GE3 part is unused and in its original packaging.

Return procedure for SUP50020E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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