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Vishay Siliconix SUP50020EL-GE3
- Part No.:
- SUP50020EL-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SUP50020EL-GE3.pdf
- Description:
- MOSFET N-CH 60V 120A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:261
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Product details
Overview
SUP50020EL-GE3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® power MOSFET in TO-220AB package, rated for 120 A continuous drain current at TJ = 150 °C, with RDS(on) of 0.0023 Ω at VGS = 10 V and 0.0028 Ω at VGS = 4.5 V, and total gate charge of 126 nC - optimized for high-efficiency secondary synchronous rectification in power supplies.
For engineers reviewing the SUP50020EL-GE3 datasheet, SUP50020EL-GE3 pinout, SUP50020EL-GE3 application, or SUP50020EL-GE3 equivalent, key selection considerations include its logic-level gate drive compatibility, 175 °C maximum junction temperature, 0.4 °C/W junction-to-case thermal resistance, avalanche energy rating of 281 mJ, and Qgd/Qgs ratio < 0.25 for fast switching control.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and high current density in a standard through-hole TO-220AB package. Its gate threshold voltage range (1.2–2.5 V) and guaranteed operation down to 4.5 V gate drive enable direct interfacing with microcontrollers and PWM controllers without level-shifting.
The device features 100 % Rg and UIS testing, with SOA defined up to DC operation at TC = 25 °C and derated per curve above 70 °C. Its body diode exhibits trr = 120–180 ns and Qrr = 0.287–0.430 μC, supporting high-frequency hard-switched and synchronous rectifier topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (max) | 60 V - supports 48 V bus systems with margin for transient spikes |
| RDS(on) @ 10 V | 0.0023 Ω - enables ≤ 3.3 W conduction loss at 120 A |
| ID (cont) @ 150 °C | 120 A - delivers high output current in compact heatsinked designs |
| Qg (total) | 126 nC - determines gate driver power requirement and switching speed |
| RthJC | 0.4 °C/W - allows efficient heat transfer to external heatsink |
| EAS | 281 mJ - withstands single-pulse inductive energy during fault conditions |
| VGS(th) | 1.2–2.5 V - ensures reliable turn-on with 3.3 V or 5 V logic-level drivers |
Pinout & Package
Supplied in TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, and heatsink-compatible flange. Dimensions comply with Vishay drawing 71195: D = 14.85–15.49 mm, E = 10.04–10.51 mm, L = 13.35–14.02 mm, and flange hole ØP = 3.54–3.94 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main power output terminal, connected to MOSFET's bulk silicon substrate and package tab | Must be electrically isolated from heatsink unless referenced to system ground; primary path for load current and thermal dissipation |
| G (Gate) | Control input for channel conduction | High-impedance node requiring low-inductance gate drive trace; sensitive to ESD and ringing due to 126 nC Qg |
| S (Source) | Reference node for gate drive and current return path | Common connection point for source resistor sensing, feedback networks, and low-side switching reference |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables ultra-low RDS(on) and high cell density without compromising ruggedness or UIS performance |
| Logic-level gate drive | Operates fully enhanced with VGS ≥ 4.5 V - eliminates need for gate driver ICs in many 3.3 V/5 V control systems |
| Qgd/Qgs ratio < 0.25 | Reduces Miller-induced switching delay and improves controllability during hard commutation |
| 100 % Rg and UIS tested | Ensures gate resistance consistency and validated avalanche robustness per JEDEC JESD24-11 |
| 175 °C max TJ | Supports operation in high-ambient environments (e.g., enclosed power tools, motor drives) without derating |
Applications
| Power Supply Secondary Rectification | DC/DC Converter Primary Switch |
|---|---|
Use Scenario: High-current output stage of isolated AC/DC adapter or server PSU operating at 100–500 kHz. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction losses and improve efficiency. Use Value: Achieves < 0.3 V forward drop at 100 A, cutting rectifier losses by >50 % versus 0.8 V Schottky, directly increasing full-load efficiency by 1–2 %. | Use Scenario: 48 V input, 12 V output non-isolated buck converter in telecom or industrial power module. IC Role / Device Role / Timing Role: High-side main switch controlling energy transfer into output inductor. Use Value: Low RDS(on) and 126 nC Qg support high-frequency switching with minimal gate drive loss and < 10 ns rise/fall times under 1 Ω drive. |
| Battery Management System Switch | Motor Drive Half-Bridge Leg |
Use Scenario: Bidirectional current control in Li-ion pack protection circuit or active balancing stage. IC Role / Device Role / Timing Role: Load disconnect or charge/discharge path switch with reverse current blocking. Use Value: 60 V rating covers 13S–16S battery stacks (up to 57.6 V), while 75 A avalanche current handles inductive kickback during FET turn-off. | Use Scenario: Upper or lower switch in 24–48 V BLDC motor inverter driving power tools or e-bikes. IC Role / Device Role / Timing Role: High-current switching element in half-bridge topology, synchronized with complementary FET. Use Value: 0.4 °C/W RthJC enables direct bolt-down heatsinking, sustaining 120 A peak currents with < 40 °C junction rise over case at 100 W dissipation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | RDS(on) = 0.004 Ω @ 10 V (nearly 2× higher), Qg = 131 nC, TO-220AB package | Lower current density; requires larger heatsink for same ID | Choose when legacy design reuse or cost sensitivity outweighs efficiency gains |
| STP120N6F6 | RDS(on) = 0.0022 Ω @ 10 V (comparable), Qg = 110 nC, but TJ max = 175 °C and TO-220FP package (no isolated tab) | Non-isolated tab limits heatsink mounting options; lower Qg reduces gate drive demand | Choose when PCB space constraints favor TO-220FP and isolation not required |
Compared with IRF1404PBF and STP120N6F6, SUP50020EL-GE3 offers the lowest RDS(on) among TO-220AB-packaged 60 V N-ch devices, highest continuous current rating at elevated temperature, and verified avalanche capability - making it optimal for thermally constrained, high-efficiency synchronous rectifier and motor drive applications where thermal management and conduction loss dominate design trade-offs.
Availability
SUP50020EL-GE3 is available at Aetrix Electronics and suitable for power supply secondary rectification, DC/DC converter switching, and motor drive applications requiring stable component supply, Pb-free/halogen-free compliance, and long-term industrial lifecycle support.
Supply support for SUP50020EL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Intertechnology is a global manufacturer of discrete semiconductors and passive components, founded in 1962 and headquartered in Malvern, PA, with vertical fabrication capabilities across silicon MOSFETs, diodes, resistors, and capacitors.
SUP50020EL-GE3 belongs to Vishay Siliconix's TrenchFET® Gen IV power MOSFET product line, engineered specifically for high-current, high-efficiency switching in power conversion, motor control, and battery systems where low RDS(on), fast switching, and ruggedness are critical.
FAQ
What is the maximum continuous drain current rating for SUP50020EL-GE3 at 125 °C case temperature?
SUP50020EL-GE3 is rated for 120 A continuous drain current at TC = 70 °C and TC = 25 °C per the Absolute Maximum Ratings table. At TC = 125 °C, the device remains within its Safe Operating Area only under pulsed conditions - continuous operation at that temperature exceeds thermal limits and is not specified. Derating curves in the datasheet show usable ID drops to ~60 A at TC = 125 °C for DC operation.
Does SUP50020EL-GE3 have an integrated body diode, and what are its key characteristics?
Yes, SUP50020EL-GE3 includes a built-in parasitic body diode. Its forward voltage is 0.8–1.5 V at IF = 10 A and VGS = 0 V, reverse recovery time is 120–180 ns, and reverse recovery charge is 0.287–0.430 μC. These values are measured under standardized conditions (IF = 39 A, di/dt = 100 A/μs) and support use in synchronous rectifier and freewheeling applications.
Is SUP50020EL-GE3 suitable for logic-level gate drive without a dedicated gate driver IC?
Yes, SUP50020EL-GE3 is explicitly characterized for logic-level operation: it achieves full enhancement with VGS ≥ 4.5 V, and its gate threshold voltage range (1.2–2.5 V) ensures reliable turn-on from standard 3.3 V or 5 V microcontroller outputs. However, due to its 126 nC total gate charge, slew rate and drive strength must be verified to meet target switching speed requirements.
What is the thermal resistance from junction to case (RthJC) for SUP50020EL-GE3, and how does it impact heatsink design?
SUP50020EL-GE3 has a specified RthJC of 0.4 °C/W. This low value reflects highly efficient thermal conduction from die to package tab, enabling effective heatsinking via direct bolt-down to aluminum or copper heatsinks. When combined with typical heatsink RthHA of 0.5–1.0 °C/W, total thermal resistance stays below 1.5 °C/W - sufficient to maintain TJ < 150 °C at 100 W dissipation.
How is avalanche ruggedness specified for SUP50020EL-GE3, and what test conditions apply?
SUP50020EL-GE3 is 100 % tested for Unclamped Inductive Switching (UIS) per JEDEC standards. Its single-pulse avalanche rating is 281 mJ at TA = 25 °C, measured with L = 0.1 mH, ID = 75 A, and VDD = 60 V. This rating validates robustness against inductive energy during turn-off transients in motor drive and converter applications - no derating is applied beyond the stated test condition.
SUP50020EL-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 126 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11113 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SUP50020EL-GE3 FAQ
1.How can I place an order for SUP50020EL-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUP50020EL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUP50020EL-GE3 reliable?
The price and inventory of SUP50020EL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP50020EL-GE3 is usually 5 days.
3.What payment methods are accepted for SUP50020EL-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP50020EL-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUP50020EL-GE3?
SUP50020EL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUP50020EL-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUP50020EL-GE3?
For technical support, including SUP50020EL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP50020EL-GE3 requirements.
6.How does Aetrix verify that SUP50020EL-GE3 is sourced from the original manufacturer or authorized distributors?
All SUP50020EL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP50020EL-GE3 meets industry standards.
7.What is the process for return or replacement of SUP50020EL-GE3?
All SUP50020EL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP50020EL-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUP50020EL-GE3 part is unused and in its original packaging.
Return procedure for SUP50020EL-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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