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Vishay Siliconix SUP50N03-5M1P-GE3
- Part No.:
- SUP50N03-5M1P-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SUP50N03-5M1P-GE3.pdf
- Description:
- MOSFET N-CH 30V 50A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:7,429
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Product details
Overview
SUP50N03-5M1P-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 30 V drain-source voltage, 50 A continuous drain current at TC = 25 °C, and 5.1 mΩ RDS(on) at VGS = 10 V. It serves as a high-efficiency synchronous rectifier or primary/secondary-side switch in DC/DC converters and power supplies.
For engineers reviewing the SUP50N03-5M1P-GE3 datasheet, SUP50N03-5M1P-GE3 pinout, SUP50N03-5M1P-GE3 application, or SUP50N03-5M1P-GE3 equivalent, key selection criteria include its low gate charge (21.7 nC at 4.5 V), robust avalanche energy rating (80 mJ), and TO-220AB package thermal performance (RthJC = 2.1 °C/W).
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with 21.7 nC total gate charge at 4.5 V drive. Its 30 V VDS rating and 50 A ID capability support high-current, medium-voltage power conversion stages where conduction loss minimization is critical.
The device features 100 % Rg and UIS testing, integrated body diode with 34 ns reverse recovery time and 34 nC Qrr, and operates across -55 °C to +150 °C junction temperature range. Thermal resistance from junction-to-case is 2.1 °C/W, enabling high-power dissipation when mounted on heatsink-equipped PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage in off-state; defines use in ≤30 V bus systems. |
| RDS(on) | 5.1 mΩ at VGS = 10 V - Enables <0.5 W conduction loss at 10 A, critical for high-efficiency rectification. |
| ID (Cont.) | 50 A at TC = 25 °C - Supports high-current output stages without parallel devices in compact designs. |
| Qg | 21.7 nC at VGS = 4.5 V - Low gate drive energy reduces driver losses and enables efficient 5 V logic-level control. |
| EAS | 80 mJ - Withstands single-pulse inductive energy events common in DC/DC converter switching nodes. |
| RthJC | 2.1 °C/W - Allows >25 W steady-state power dissipation with 50 °C case-to-ambient delta, supporting heatsink-free operation at moderate loads. |
| VGS(th) | 1.0–2.5 V - Ensures reliable turn-on with standard 3.3 V or 5 V microcontroller GPIOs. |
Pinout & Package
Package: TO-220AB - Through-hole, single-ended heat-transfer package with isolated drain tab; requires mechanical mounting to heatsink via M3 screw through central hole (ØP = 3.54–3.94 mm). Dimensions comply with JEDEC TO-220AB standard (Document 71195).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal; accepts 0–20 V drive; 0.7–3.5 Ω internal gate resistance limits ringing and EMI. |
| D | Drain | Main high-side or low-side power terminal; electrically connected to metal tab; must be insulated from heatsink unless referenced to system ground. |
| S | Source | Power return path and reference for gate drive; ties to PCB ground plane or source node of complementary switch in half-bridge. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® construction | Delivers industry-leading RDS(on) × Qg figure-of-merit (≈110 mΩ·nC), reducing combined conduction and switching losses. |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and guarantees unclamped inductive switching reliability per JEDEC JESD22-A115. |
| Lead (Pb)-free and Halogen-free | Meets RoHS Directive 2011/65/EU and IEC 61249-2-21, enabling compliance in consumer, industrial, and automotive end equipment. |
| Low Qgd / Qgs ratio | Qgd = 6.7 nC, Qgs = 7 nC → ratio ≈ 0.96 - minimizes Miller effect, improving hard-switching stability and dV/dt immunity. |
Applications
| Server VRM Output Stage | Industrial DC/DC Converter |
|---|---|
Use Scenario: High-current, high-efficiency 12 V input to 1 V/50 A output stage using multiphase buck topology. IC Role / Device Role: Synchronous rectifier in lower FET position; commutates current during freewheeling interval. Use Value: 5.1 mΩ RDS(on) and 21.7 nC Qg reduce conduction loss by >35 % vs. comparable 8 mΩ parts, directly improving full-load efficiency. |
Use Scenario: 24 V to 5 V/20 A isolated forward converter with active clamp reset. IC Role / Device Role: Primary-side main switch handling 50 A peak current at 300 kHz switching frequency. Use Value: 80 mJ EAS rating withstands leakage inductance spikes during clamp reset, eliminating need for external snubber. |
| Telecom Power Supply | Automotive Body Control Module |
Use Scenario: 48 V intermediate bus converter supplying 12 V/30 A to downstream POL modules. IC Role / Device Role: Secondary-side synchronous rectifier operating in continuous conduction mode. Use Value: 0.75–1.5 V VSD forward voltage and 34 ns trr minimize body diode conduction loss during dead-time, boosting light-load efficiency. |
Use Scenario: 12 V battery-fed motor driver for HVAC blower or seat actuator with PWM control. IC Role / Device Role: Low-side power switch controlling brushed DC motor current up to 50 A peak. Use Value: -55 °C to +150 °C operating range and 100 % UIS testing ensure reliability under automotive thermal cycling and load dump transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF540NPBF | RDS(on) = 44 mΩ @ 10 V (8.6× higher); Qg = 71 nC (3.3× higher); TO-220AB package. | Higher conduction and switching losses limit use to ≤10 A average current or low-frequency (<100 kHz) applications. | Select only if legacy design reuse or cost sensitivity outweighs efficiency requirements. |
| STP55NF06L | RDS(on) = 10.5 mΩ @ 5 V; VDS = 60 V; Qg = 55 nC; same TO-220AB footprint but higher voltage rating. | Over-specified VDS increases gate drive energy and die size; less optimal for 30 V systems due to higher capacitance. | Prefer only when 60 V margin is required for surge tolerance or future voltage scaling. |
Compared with IRF540NPBF and STP55NF06L, SUP50N03-5M1P-GE3 delivers superior efficiency in 30 V, high-current DC/DC applications due to its ultra-low RDS(on)/Qg combination, while maintaining identical TO-220AB mounting and thermal interface compatibility.
Availability
SUP50N03-5M1P-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and telecom power supplies requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for SUP50N03-5M1P-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SUP50N03-5M1P-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency synchronous rectification and switching in enterprise and industrial power systems.
FAQ
What is the maximum continuous drain current rating for SUP50N03-5M1P-GE3 at 70 °C case temperature?
The SUP50N03-5M1P-GE3 supports 50 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is identical to its 25 °C rating because thermal derating begins above 70 °C, with current limited by SOA constraints rather than package dissipation alone.
Does SUP50N03-5M1P-GE3 support 3.3 V logic-level gate drive?
Yes, SUP50N03-5M1P-GE3 has a gate threshold voltage range of 1.0–2.5 V and delivers 6.3 mΩ RDS(on) at VGS = 4.5 V. While not fully enhanced at 3.3 V, it conducts usable current (ID ≈ 15–20 A) with acceptable on-resistance for many medium-duty applications; for full 50 A capability, 4.5 V or higher drive is recommended.
What is the safe operating area (SOA) limitation for SUP50N03-5M1P-GE3 at DC operation?
At DC operation, SUP50N03-5M1P-GE3 is package-limited to 2.7 W at TA = 25 °C (RthJA = 46 °C/W) and 59.5 W at TC = 25 °C (RthJC = 2.1 °C/W). The SOA curve confirms that DC operation is constrained by RDS(on) heating, not voltage breakdown-maximum VDS at ID = 50 A is ~0.25 V in linear region.
Is SUP50N03-5M1P-GE3 suitable for avalanche-prone circuits like flyback snubbers?
Yes, SUP50N03-5M1P-GE3 is 100 % UIS tested and rated for 80 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH. This makes it suitable for controlled avalanche applications such as RCD snubbers or inductive load switching where energy absorption is required without external clamping.
How does the body diode performance of SUP50N03-5M1P-GE3 compare to Schottky alternatives?
SUP50N03-5M1P-GE3 features a fast body diode with 34 ns reverse recovery time and 34 nC Qrr, outperforming most standard MOSFETs but not matching Schottky forward voltage (0.3–0.5 V). Its VSD = 0.75–1.5 V at IF = 10 A provides predictable conduction during dead-time, enabling efficient synchronous rectification without external diode replacement.
SUP50N03-5M1P-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.1mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 66 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2780 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.7W (Ta), 59.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SUP50N03-5M1P-GE3 FAQ
1.How can I place an order for SUP50N03-5M1P-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUP50N03-5M1P-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUP50N03-5M1P-GE3 reliable?
The price and inventory of SUP50N03-5M1P-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP50N03-5M1P-GE3 is usually 5 days.
3.What payment methods are accepted for SUP50N03-5M1P-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP50N03-5M1P-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUP50N03-5M1P-GE3?
SUP50N03-5M1P-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUP50N03-5M1P-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUP50N03-5M1P-GE3?
For technical support, including SUP50N03-5M1P-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP50N03-5M1P-GE3 requirements.
6.How does Aetrix verify that SUP50N03-5M1P-GE3 is sourced from the original manufacturer or authorized distributors?
All SUP50N03-5M1P-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP50N03-5M1P-GE3 meets industry standards.
7.What is the process for return or replacement of SUP50N03-5M1P-GE3?
All SUP50N03-5M1P-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP50N03-5M1P-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUP50N03-5M1P-GE3 part is unused and in its original packaging.
Return procedure for SUP50N03-5M1P-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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