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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP50N10-21P-GE3

Name: SUP50N10-21P-GE3
Brand: Vishay Siliconix
SKU: SUP50N10-21P-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP50N10-21P-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP50N10-21P-GE3.pdf

Description:: MOSFET N-CH 100V 50A TO220AB

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Product details

Overview

SUP50N10-21P-GE3 from Vishay Siliconix is an N-channel enhancement-mode TrenchFET® power MOSFET rated for 100 V drain-source voltage, 50 A continuous drain current at TC = 25 °C, and 0.021 Ω RDS(on) at VGS = 10 V. It serves as a primary-side switching device in high-efficiency DC/AC inverters and synchronous rectifiers with robust avalanche capability (80 mJ single-pulse).

For engineers reviewing the SUP50N10-21P-GE3 datasheet, SUP50N10-21P-GE3 pinout, SUP50N10-21P-GE3 application, or SUP50N10-21P-GE3 equivalent, key selection criteria include its TO-220AB package thermal performance (RthJC = 1 °C/W), gate charge (30.2 nC typical), body diode recovery (trr = 55–83 ns), and Pb-free/halogen-free compliance per ordering suffix -GE3.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled gate charge distribution. Its 100 % Rg and UIS testing ensures gate robustness and unclamped inductive switching reliability under real-world transient conditions.

The device operates across -55 °C to +150 °C junction temperature range and supports gate drive voltages up to ±20 V. Its SOA curve defines safe operation under pulsed loads, with package-limited power dissipation (125 W at TC = 25 °C) and thermal resistance optimized for heatsink-mounted PCB applications.

Key Specifications

Parameter	Value and Actual Design Meaning
VDS	100 V - Maximum blocking voltage before breakdown; suitable for 48 V and 96 V bus systems with margin.
RDS(on) Max	0.021 Ω at VGS = 10 V - Enables <1.05 W conduction loss at 50 A, critical for thermal management in high-current inverters.
ID (Cont)	50 A at TC = 25 °C - Continuous current rating defined at case temperature; derates to 41.6 A at TC = 70 °C.
Qg (Typ)	30.2 nC - Total gate charge determines driver strength requirement and switching loss in hard-switched topologies.
EAS	80 mJ - Single-pulse avalanche energy rating confirms ruggedness during inductive turn-off transients without external snubbers.
RthJC	1 °C/W - Junction-to-case thermal resistance enables precise heatsink sizing; 125 W PD implies ≤125 °C ΔT at full load.
VGS(th)	2–4 V - Gate threshold voltage range ensures reliable turn-on with standard 5 V or 10 V logic-level drivers.

Pinout & Package

Package: TO-220AB - Through-hole, single-ended heatsink-mountable package with insulated tab; lead (Pb)-free and halogen-free per -GE3 suffix.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; requires ≥10 V for full enhancement; gate resistance 0.3–1.5 Ω affects ringing and drive loop stability.
D	Drain	Main high-side switching node; electrically connected to metal tab; must be isolated from heatsink unless using insulating washer.
S	Source	Power return path and reference for gate drive; connects to low-side of half-bridge or ground-referenced load.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lower RDS(on) per die area vs. planar MOSFETs, enabling compact 50 A switching in TO-220AB footprint.
100 % Rg tested	Guarantees gate resistance consistency (0.3–1.5 Ω), reducing risk of gate oscillation and driver overcurrent in production.
100 % UIS tested	Validates unclamped inductive switching capability up to 80 mJ, eliminating need for design margin assumptions on avalanche survival.
Pb-free and halogen-free (-GE3)	Meets RoHS Directive 2011/65/EU and JEDEC JS709B; compatible with lead-free reflow and legacy wave solder processes.
Body diode with trr = 55–83 ns	Enables use in synchronous rectification where fast reverse recovery minimizes commutation losses and EMI.

Applications

DC/AC Inverters	Primary Side Switching
Use Scenario: High-efficiency solar microinverters converting 40–60 V DC to 230 V AC with >96 % peak efficiency. IC Role / Device Role / Timing Role: Primary-side high-side switch in hard-switched or resonant half-bridge topology. Use Value: Low RDS(on) (0.021 Ω) and 50 A rating support high power density; 100 V rating provides 2× bus margin for 48 V input.	Use Scenario: Isolated flyback or forward converter in industrial SMPS with 36–75 V input range. IC Role / Device Role / Timing Role: Main switching transistor controlling energy transfer from primary winding to transformer. Use Value: 80 mJ EAS rating withstands leakage inductance spikes without snubber; TO-220AB allows direct heatsink mounting for thermal stability.
Synchronous Rectification	Motor Drive Half-Bridge
Use Scenario: Secondary-side rectification in telecom DC/DC bricks (e.g., 48 V input → 12 V output). IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode in LLC or phase-shifted full-bridge. Use Value: Fast body diode (trr = 55–83 ns) and low Qrr (107–161 nC) reduce switching loss and voltage overshoot during commutation.	Use Scenario: 3-phase BLDC motor driver stage for HVAC blowers or industrial pumps operating at 24–48 V. IC Role / Device Role / Timing Role: Upper or lower switch in half-bridge leg driving motor phase winding. Use Value: 50 A ID rating and 125 W PD support continuous 300–500 W output; RthJC = 1 °C/W simplifies thermal design with passive heatsinking.

DC/AC Inverters

Primary Side Switching

Use Scenario: High-efficiency solar microinverters converting 40–60 V DC to 230 V AC with >96 % peak efficiency.

IC Role / Device Role / Timing Role: Primary-side high-side switch in hard-switched or resonant half-bridge topology.

Use Value: Low RDS(on) (0.021 Ω) and 50 A rating support high power density; 100 V rating provides 2× bus margin for 48 V input.

Use Scenario: Isolated flyback or forward converter in industrial SMPS with 36–75 V input range.

IC Role / Device Role / Timing Role: Main switching transistor controlling energy transfer from primary winding to transformer.

Use Value: 80 mJ EAS rating withstands leakage inductance spikes without snubber; TO-220AB allows direct heatsink mounting for thermal stability.

Synchronous Rectification

Motor Drive Half-Bridge

Use Scenario: Secondary-side rectification in telecom DC/DC bricks (e.g., 48 V input → 12 V output).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode in LLC or phase-shifted full-bridge.

Use Value: Fast body diode (trr = 55–83 ns) and low Qrr (107–161 nC) reduce switching loss and voltage overshoot during commutation.

Use Scenario: 3-phase BLDC motor driver stage for HVAC blowers or industrial pumps operating at 24–48 V.

IC Role / Device Role / Timing Role: Upper or lower switch in half-bridge leg driving motor phase winding.

Use Value: 50 A ID rating and 125 W PD support continuous 300–500 W output; RthJC = 1 °C/W simplifies thermal design with passive heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP50N10F6	RDS(on) = 0.022 Ω @ 10 V; Qg = 32 nC; TO-220FP package (full-pack, no heatsink tab exposure).	Limited to lower-power applications due to 30 W PD (TO-220FP); unsuitable for high-duty-cycle heatsink-mounted use.	Select when board space constraints require insulated package and thermal load ≤30 W.
IRF540NPBF	RDS(on) = 0.044 Ω @ 10 V; Qg = 71 nC; same TO-220AB package but older planar process.	Higher conduction and switching losses; not rated for avalanche energy; lacks 100 % UIS test.	Accept only for cost-sensitive, non-critical 100 V switching where 0.021 Ω RDS(on) and 80 mJ EAS are not required.

Compared with STP50N10F6 and IRF540NPBF, SUP50N10-21P-GE3 delivers 2× lower RDS(on), 2.2× less Qg, and guaranteed avalanche ruggedness-making it optimal for thermally constrained, high-reliability inverter and SMPS designs requiring long-term field robustness.

Availability

SUP50N10-21P-GE3 is available at Aetrix Electronics and suitable for DC/AC inverters, primary side switching, and synchronous rectification requiring stable component supply, Pb-free compliance, and verified avalanche performance.

Supply support for SUP50N10-21P-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The SUP50N10-21P-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered for high-current, high-voltage switching in industrial power conversion, renewable energy, and motor control systems.

FAQ

What is the maximum continuous drain current rating for SUP50N10-21P-GE3?

The SUP50N10-21P-GE3 has a maximum continuous drain current (ID) of 50 A at case temperature TC = 25 °C, derating to 41.6 A at TC = 70 °C. This rating assumes proper heatsinking and is validated per the SOA curve in the official datasheet (Document Number: 62781). The device's 125 W maximum power dissipation and 1 °C/W junction-to-case thermal resistance directly support this current capability under controlled thermal conditions.

Does SUP50N10-21P-GE3 support logic-level gate drive?

SUP50N10-21P-GE3 is not a logic-level MOSFET; its gate threshold voltage (VGS(th)) ranges from 2 V to 4 V, but full enhancement requires VGS ≥ 10 V to achieve the specified 0.021 Ω RDS(on). Driving it with 5 V logic will result in significantly higher on-resistance (>0.05 Ω) and excessive conduction loss. A dedicated 10–15 V gate driver is recommended for optimal performance.

Is SUP50N10-21P-GE3 suitable for avalanche-prone circuits like flyback converters?

Yes - SUP50N10-21P-GE3 is 100 % UIS tested and rated for 80 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH. This makes it suitable for primary-side switching in flyback and forward converters where leakage inductance causes voltage spikes. Its ruggedness eliminates the need for external clamping in many designs, provided layout minimizes parasitic inductance.

What does the "-GE3" suffix indicate for SUP50N10-21P-GE3?

The "-GE3" suffix on SUP50N10-21P-GE3 denotes Vishay's standard Pb-free and halogen-free packaging: matte tin-plated leads, no lead (Pb), and compliant with RoHS Directive 2011/65/EU and JEDEC JS709B. It is not a "green" or "eco" variant code - it is the baseline industrial-grade, environmentally compliant version of the part.

How does the body diode performance of SUP50N10-21P-GE3 compare to standard rectifiers?

SUP50N10-21P-GE3 features an integrated body diode with forward voltage VSD = 0.75–1.2 V at IF = 8 A and reverse recovery time trr = 55–83 ns. While slower than dedicated SiC Schottkys, its trr and Qrr (107–161 nC) are optimized for synchronous rectification in medium-frequency LLC or phase-shifted topologies - outperforming older MOSFETs and enabling measurable efficiency gains over FRD-based solutions in 100–300 kHz applications.

SUP50N10-21P-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 21mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2055 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP50N10-21P-GE3 FAQ

1.How can I place an order for SUP50N10-21P-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP50N10-21P-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP50N10-21P-GE3 reliable?

The price and inventory of SUP50N10-21P-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP50N10-21P-GE3 is usually 5 days.

3.What payment methods are accepted for SUP50N10-21P-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP50N10-21P-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP50N10-21P-GE3?

SUP50N10-21P-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP50N10-21P-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP50N10-21P-GE3?

For technical support, including SUP50N10-21P-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP50N10-21P-GE3 requirements.

6.How does Aetrix verify that SUP50N10-21P-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP50N10-21P-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP50N10-21P-GE3 meets industry standards.

7.What is the process for return or replacement of SUP50N10-21P-GE3?

All SUP50N10-21P-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP50N10-21P-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP50N10-21P-GE3 part is unused and in its original packaging.

Return procedure for SUP50N10-21P-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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