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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP53P06-20-GE3

Name: SUP53P06-20-GE3
Brand: Vishay Siliconix
SKU: SUP53P06-20-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP53P06-20-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP53P06-20-GE3.pdf

Description:: MOSFET P-CH 60V 9.2A/53A TO220AB

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Product details

Overview

SUP53P06-20-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® power MOSFET rated for -60 V drain-source voltage, 0.0195 Ω R_DS(on) at V_GS = -10 V, and -53 A continuous drain current at T_C = 25 °C; it serves as a high-current load switch in industrial power distribution systems.

For engineers reviewing the SUP53P06-20-GE3 datasheet, SUP53P06-20-GE3 pinout, SUP53P06-20-GE3 application, or SUP53P06-20-GE3 equivalent, key selection criteria include its -60 V rating, low R_DS(on) at -4.5 V gate drive, 100 % UIS tested ruggedness, TO-220AB thermal performance, and body diode recovery characteristics for synchronous rectification or reverse polarity protection.

Technical Context

This device operates as a single P-channel MOSFET with a trench-based silicon structure optimized for low conduction loss and fast switching. Its gate threshold voltage range of -1 V to -3 V enables reliable turn-on with standard logic-level negative gate drivers, and its 76 nC total gate charge supports efficient operation in hard-switched DC-DC converters up to ~100 kHz.

The integrated source-drain body diode exhibits 45 ns typical reverse recovery time and 59 nC Q_rr, making it suitable for freewheeling paths where controlled diode conduction is required. Thermal resistance R_thJC of 0.98 °C/W (typical) allows sustained 104.2 W power dissipation at T_C = 25 °C when mounted on a heatsink.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage for reverse-polarity protection or high-side switching in 48 V systems
R_DS(on) @ V_GS = -10 V	0.0195 Ω - Enables ≤ 31 W conduction loss at -53 A, critical for thermally constrained load switches
R_DS(on) @ V_GS = -4.5 V	0.0250 Ω - Ensures usable on-resistance with low-voltage gate drivers, supporting 3.3 V/5 V control logic
Q_g	76 nC - Determines gate driver power requirement and switching loss in PWM applications
I_D (continuous)	-53 A @ T_C = 25 °C - Supports high-current loads such as motor drivers or battery disconnect circuits
E_AS	101 mJ - Confirmed avalanche energy rating ensures robustness during inductive load switching transients
R_thJC	0.98 °C/W (typ) - Enables direct heatsink mounting with predictable junction temperature rise under full load

Pinout & Package

Package: TO-220AB - Through-hole, single-ended, isolated tab package with center-drain pinout; tab is electrically connected to drain and intended for heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Left)	Source	Common return path for load current; tied to system ground or negative rail in high-side configurations
Pin 2 (Center)	Drain	Connected to internal MOSFET die drain and metal tab; must be electrically isolated from PCB if heatsink is grounded
Pin 3 (Right)	Gate	Control terminal requiring negative voltage relative to source to turn on; sensitive to ESD and ringing

Key Features

Feature	Design Value
TrenchFET® technology	Enables lower R_DS(on) per die area than planar MOSFETs, improving power density and thermal efficiency
100 % UIS tested	Each unit undergoes unclamped inductive switching stress test to guarantee minimum 101 mJ avalanche capability
Low Q_gd/Q_g ratio	19 nC / 76 nC = 0.25 - Reduces Miller-induced switching instability and improves hard-switching robustness
Enhanced body diode softness	trr = 45 ns, Q_rr = 59 nC - Limits voltage overshoot and EMI during diode commutation in buck or flyback topologies
Lead (Pb)-free and RoHS-compliant	Meets EU Directive 2011/65/EU; compatible with standard SnPb and lead-free reflow profiles

Applications

Reverse Polarity Protection	High-Side Load Switch
Use Scenario: Protecting 24–48 V industrial equipment from damage due to incorrect battery or power supply connection. IC Role / Device Role / Timing Role: P-channel MOSFET configured as a series pass element between input and system rail, turned on only when polarity is correct. Use Value: Eliminates need for series Schottky diodes, reducing forward drop from ~0.4 V to <0.03 V at 30 A, saving >10 W of heat in 48 V systems.	Use Scenario: Controlled power-up sequencing for FPGA, DSP, or microcontroller subsystems requiring independent rail enable. IC Role / Device Role / Timing Role: High-side switch isolating downstream circuitry until host controller asserts gate drive. Use Value: Supports fast turn-on (10 ns t_d(on)) and clean turn-off (70 ns t_d(off)) with minimal shoot-through risk due to negative gate control.
DC-DC Synchronous Rectifier	Motor Drive Half-Bridge Low-Side
Use Scenario: Replacing output rectifier diode in isolated 48 V-to-12 V DC-DC converters to improve efficiency above 95 %. IC Role / Device Role / Timing Role: Synchronously driven P-channel MOSFET operating in reverse-conduction mode during freewheeling phase. Use Value: Body diode V_SD = -1.0 V at -30 A enables low-loss conduction before gate drive engages, minimizing dead-time losses.	Use Scenario: Driving brushed DC motors or solenoids in automotive body control modules or industrial actuators. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, sinking current from motor winding to ground. Use Value: -150 A pulsed drain rating (I_DM) accommodates motor stall currents without avalanche failure, supported by 100 % UIS screening.

Reverse Polarity Protection

High-Side Load Switch

Use Scenario: Protecting 24–48 V industrial equipment from damage due to incorrect battery or power supply connection.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as a series pass element between input and system rail, turned on only when polarity is correct.

Use Value: Eliminates need for series Schottky diodes, reducing forward drop from ~0.4 V to <0.03 V at 30 A, saving >10 W of heat in 48 V systems.

Use Scenario: Controlled power-up sequencing for FPGA, DSP, or microcontroller subsystems requiring independent rail enable.

IC Role / Device Role / Timing Role: High-side switch isolating downstream circuitry until host controller asserts gate drive.

Use Value: Supports fast turn-on (10 ns t_d(on)) and clean turn-off (70 ns t_d(off)) with minimal shoot-through risk due to negative gate control.

DC-DC Synchronous Rectifier

Motor Drive Half-Bridge Low-Side

Use Scenario: Replacing output rectifier diode in isolated 48 V-to-12 V DC-DC converters to improve efficiency above 95 %.

IC Role / Device Role / Timing Role: Synchronously driven P-channel MOSFET operating in reverse-conduction mode during freewheeling phase.

Use Value: Body diode V_SD = -1.0 V at -30 A enables low-loss conduction before gate drive engages, minimizing dead-time losses.

Use Scenario: Driving brushed DC motors or solenoids in automotive body control modules or industrial actuators.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, sinking current from motor winding to ground.

Use Value: -150 A pulsed drain rating (I_DM) accommodates motor stall currents without avalanche failure, supported by 100 % UIS screening.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PBF	R_DS(on) = 0.02 Ω @ -10 V; Q_g = 130 nC; no 100 % UIS test specified	Higher switching loss due to larger gate charge; less rugged in inductive switching	Acceptable for static load switching but not recommended for repetitive hard-switching or high-di/dt loads
IXTP50P055P	R_DS(on) = 0.0055 Ω @ -10 V; V_DS = -55 V; TO-220 package with different pinout (G-D-S)	Lower on-resistance but reduced voltage margin; incompatible pinout requires PCB redesign	Superior conduction efficiency in 24 V systems, but not a drop-in replacement due to gate-drain-source pin reversal

Compared with IRF4905PBF and IXTP50P055P, the SUP53P06-20-GE3 delivers optimal balance of -60 V rating, 0.0195 Ω on-resistance, 76 nC gate charge, and factory-verified avalanche ruggedness-making it uniquely suited for industrial 48 V load switching where reliability under transient stress is non-negotiable.

Availability

SUP53P06-20-GE3 is available at Aetrix Electronics and suitable for industrial power distribution, reverse polarity protection, and high-current load switching applications requiring stable component supply and long-term lifecycle support.

Supply support for SUP53P06-20-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and ruggedness.

The SUP53P06-20-GE3 belongs to Vishay's TrenchFET® Gen IV P-channel portfolio, engineered for high-reliability industrial and automotive power management where low R_DS(on), robust avalanche capability, and consistent gate drive behavior are essential.

FAQ

What is the maximum continuous drain current rating for SUP53P06-20-GE3 at case temperature of 70 °C?

The SUP53P06-20-GE3 supports -46.8 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limits imposed by junction-to-case resistance and heatsink interface quality, and must be validated against actual board layout and airflow conditions in the final design.

Does SUP53P06-20-GE3 have a fully characterized body diode for synchronous rectification?

Yes, the SUP53P06-20-GE3 datasheet specifies full body diode parameters including V_SD = -1.0 V at -30 A, trr = 45 ns (typ), and Q_rr = 59 nC (typ). These values are measured under defined conditions (IF = -50 A, di/dt = 100 A/μs, T_J = 25 °C) and support use in synchronous rectifier designs where controlled diode conduction precedes gate turn-on.

Is SUP53P06-20-GE3 suitable for gate drive with a +5 V microcontroller output?

No - the SUP53P06-20-GE3 is a P-channel MOSFET requiring negative gate-to-source voltage to turn on. A +5 V signal alone cannot activate it. To interface with a 5 V MCU, a level-shifting driver (e.g., dedicated P-channel gate driver or complementary NPN/PNP stage) must generate V_GS ≤ -4.5 V relative to source potential.

What is the thermal resistance from junction to ambient for SUP53P06-20-GE3 on a 1" × 1" FR4 board?

The datasheet specifies R_thJA = 33 °C/W (typical) and 40 °C/W (maximum) for the SUP53P06-20-GE3 mounted on a 1" × 1" FR4 board with 2 oz copper. This value assumes no external heatsink and defines worst-case junction temperature rise under natural convection; actual performance depends on board copper area, layer stackup, and airflow.

How does the 100 % UIS testing impact reliability of SUP53P06-20-GE3 in real-world inductive load switching?

The 100 % UIS (unclamped inductive switching) test subjects every SUP53P06-20-GE3 unit to controlled avalanche stress, verifying minimum 101 mJ single-pulse energy handling. This ensures field reliability in applications like relay driving or solenoid control where inductive kickback would otherwise cause premature failure without snubbing.

SUP53P06-20-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 9.2A (Ta), 53A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 19.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 115 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 104.2W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP53P06-20-GE3 FAQ

1.How can I place an order for SUP53P06-20-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP53P06-20-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP53P06-20-GE3 reliable?

The price and inventory of SUP53P06-20-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP53P06-20-GE3 is usually 5 days.

3.What payment methods are accepted for SUP53P06-20-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP53P06-20-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP53P06-20-GE3?

SUP53P06-20-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP53P06-20-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP53P06-20-GE3?

For technical support, including SUP53P06-20-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP53P06-20-GE3 requirements.

6.How does Aetrix verify that SUP53P06-20-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP53P06-20-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP53P06-20-GE3 meets industry standards.

7.What is the process for return or replacement of SUP53P06-20-GE3?

All SUP53P06-20-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP53P06-20-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP53P06-20-GE3 part is unused and in its original packaging.

Return procedure for SUP53P06-20-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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