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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP57N20-33-E3

Name: SUP57N20-33-E3
Brand: Vishay Siliconix
SKU: SUP57N20-33-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP57N20-33-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP57N20-33-E3.pdf

Description:: MOSFET N-CH 200V 57A TO220AB

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Product details

Overview

SUP57N20-33-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 200 V (V_DS), 57 A continuous drain current at T_C = 25 °C, and 0.033 Ω r_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature and features a TO-220AB package with drain-connected tab, designed as a primary-side switch in isolated DC/DC converters.

For engineers reviewing the SUP57N20-33-E3 datasheet, SUP57N20-33-E3 pinout, SUP57N20-33-E3 application, or SUP57N20-33-E3 equivalent, key selection criteria include its 200 V breakdown voltage, 0.033 Ω on-resistance at 10 V gate drive, 140 A pulsed drain rating, avalanche energy capability (61 mJ), and thermal resistance R_thJC = 0.5 °C/W - all critical for high-reliability, high-efficiency power conversion designs.

Technical Context

This MOSFET employs Vishay's TrenchFET® process to achieve low r_DS(on) while maintaining robust 200 V V_DS rating and 175 °C maximum junction temperature. Its gate threshold voltage (2–4 V) enables standard 10 V logic-level drive, and it supports fast switching with Q_g = 90–130 nC and t_d(on)/t_d(off) ≤ 35/70 ns under specified test conditions.

The device integrates a source-drain diode with 65 A continuous forward current, 1.0–1.5 V forward voltage at 65 A, and 130–200 ns reverse recovery time. Its SOA is defined up to 1 ms pulses and DC operation, limited by r_DS(on) at low V_DS, and validated for single-pulse avalanche energy of 61 mJ at L = 0.1 mH.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Withstands up to 200 V drain-to-source blocking voltage, suitable for 48 V and 110 V input DC/DC topologies with margin.
r_DS(on)	0.033 Ω @ V_GS = 10 V, I_D = 30 A - Enables <1.0 W conduction loss at 57 A full-load current in optimized heatsink layouts.
I_D (continuous)	57 A @ T_C = 25 °C - Supports high-current primary-side switching in industrial and telecom power supplies.
E_AS	61 mJ - Provides measurable unclamped inductive switching robustness without external snubbers in flyback or forward converters.
R_thJC	0.5 °C/W - Allows efficient heat transfer from die to heatsink, enabling compact thermal design when mounted on copper-clad PCB or external heatsink.
Q_g	90–130 nC - Determines gate driver power requirement and switching speed trade-off; compatible with common 1–2 A peak gate drivers.
T_J max	175 °C - Permits operation in high-ambient environments such as enclosed power enclosures or base stations without derating.

Pinout & Package

Package: TO-220AB, through-hole, drain-connected metal tab (electrically active). Mounting requires insulating washer or isolation pad if heatsink is grounded.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires 10 V nominal drive for full enhancement; ±20 V absolute max rating.
D	Drain	Main high-voltage power terminal; internally connected to metal tab for low-inductance, high-current path to heatsink.
S	Source	Power return node and reference for gate drive; forms common node with body diode cathode.

Key Features

Feature	Design Value
TrenchFET® technology	Delivers industry-competitive r_DS(on) × area efficiency for 200 V class, reducing conduction losses without sacrificing ruggedness.
175 °C maximum junction temperature	Enables reliable operation in thermally constrained spaces and high-ambient applications like industrial motor drives and telecom rectifiers.
Drain-connected tab	Provides low-thermal-resistance path to heatsink (R_thJC = 0.5 °C/W) and simplifies mechanical mounting in high-power TO-220 layouts.
61 mJ single-pulse avalanche energy	Supports robustness against transient overvoltage events in hard-switched topologies without requiring additional clamping components.

Applications

Telecom Rectifier Modules	Industrial DC/DC Converters
Use Scenario: High-efficiency 48 V input to 12 V output isolated DC/DC conversion in telecom shelf power systems. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch in forward or half-bridge topology operating at 100–300 kHz. Use Value: Low 0.033 Ω r_DS(on) minimizes conduction loss at 50+ A load currents, improving system efficiency beyond 94 % at full load.	Use Scenario: 24–72 V battery-fed isolated power supply for PLC I/O modules and sensor interfaces. IC Role / Device Role / Timing Role: Main switching element in flyback converter primary side, handling repetitive 200 V transients during demagnetization. Use Value: 200 V V_DS rating and 61 mJ E_AS ensure reliable operation under line surges and transformer leakage spikes without failure.
Server PSU Hold-Up Circuits	EV Onboard Charger Stages
Use Scenario: High-current hold-up switch in redundant AC/DC front-end modules to maintain output during brief AC dropout. IC Role / Device Role / Timing Role: Low-side switching element conducting up to 57 A continuously with minimal thermal rise. Use Value: 175 °C T_J rating and 0.5 °C/W R_thJC allow sustained operation at >100 W dissipation with passive cooling.	Use Scenario: Interleaved PFC or isolated DC/DC stage in 3.3 kW onboard chargers for light-duty EVs. IC Role / Device Role / Timing Role: High-voltage switching transistor in boost or LLC resonant converter primary leg. Use Value: Fast dynamic parameters (Q_gd = 34 nC, t_f = 200–300 ns) support efficient ZVS/ZCS operation above 100 kHz switching frequencies.

Telecom Rectifier Modules

Industrial DC/DC Converters

Use Scenario: High-efficiency 48 V input to 12 V output isolated DC/DC conversion in telecom shelf power systems.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch in forward or half-bridge topology operating at 100–300 kHz.

Use Value: Low 0.033 Ω r_DS(on) minimizes conduction loss at 50+ A load currents, improving system efficiency beyond 94 % at full load.

Use Scenario: 24–72 V battery-fed isolated power supply for PLC I/O modules and sensor interfaces.

IC Role / Device Role / Timing Role: Main switching element in flyback converter primary side, handling repetitive 200 V transients during demagnetization.

Use Value: 200 V V_DS rating and 61 mJ E_AS ensure reliable operation under line surges and transformer leakage spikes without failure.

Server PSU Hold-Up Circuits

EV Onboard Charger Stages

Use Scenario: High-current hold-up switch in redundant AC/DC front-end modules to maintain output during brief AC dropout.

IC Role / Device Role / Timing Role: Low-side switching element conducting up to 57 A continuously with minimal thermal rise.

Use Value: 175 °C T_J rating and 0.5 °C/W R_thJC allow sustained operation at >100 W dissipation with passive cooling.

Use Scenario: Interleaved PFC or isolated DC/DC stage in 3.3 kW onboard chargers for light-duty EVs.

IC Role / Device Role / Timing Role: High-voltage switching transistor in boost or LLC resonant converter primary leg.

Use Value: Fast dynamic parameters (Q_gd = 34 nC, t_f = 200–300 ns) support efficient ZVS/ZCS operation above 100 kHz switching frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF20	r_DS(on) = 0.036 Ω @ 10 V; R_thJC = 0.65 °C/W; lower E_AS (45 mJ)	Marginally higher conduction loss and reduced avalanche robustness limit use in high-stress flyback designs.	Acceptable where thermal margin exists and avalanche stress is minimal; verify SOA compliance per layout.
IXTH50N20L2	r_DS(on) = 0.040 Ω @ 10 V; 150 °C T_J max; TO-247 package	Larger footprint and lower max junction temperature reduce power density and ambient tolerance vs. SUP57N20-33-E3.	Preferred only when TO-247 mechanical compatibility or higher pulse current (160 A) is required; not drop-in.

Compared with STP55NF20 and IXTH50N20L2, SUP57N20-33-E3 delivers superior thermal performance (0.5 °C/W), higher avalanche energy (61 mJ), and tighter r_DS(on) (0.033 Ω), making it optimal for space-constrained, high-reliability 200 V switch-mode power supplies where thermal headroom and transient robustness are critical.

Availability

SUP57N20-33-E3 is available at Aetrix Electronics and suitable for telecom rectifier modules, industrial DC/DC converters, and EV onboard charger stages requiring stable component supply and RoHS-compliant lead-free termination.

Supply support for SUP57N20-33-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and thermal performance.

The SUP57N20-33-E3 belongs to Vishay's TrenchFET® Gen III 200 V power MOSFET family, engineered for high-efficiency, high-reliability primary-side switching in isolated DC/DC converters and industrial power systems.

FAQ

What is the maximum continuous drain current rating for SUP57N20-33-E3 at 125 °C case temperature?

The SUP57N20-33-E3 has a continuous drain current rating of 33 A at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects increased channel resistance at elevated temperatures and must be applied when designing thermal management for sustained high-power operation. The full 57 A rating applies only at T_C = 25 °C, and actual usable current depends on heatsinking and ambient conditions. Always consult the SOA curve for safe operating limits across voltage and time domains.

Does SUP57N20-33-E3 have a built-in body diode, and what are its key characteristics?

Yes, SUP57N20-33-E3 includes an integrated source-drain body diode rated for 65 A continuous forward current and 140 A pulsed current. Its forward voltage is 1.0–1.5 V at I_F = 65 A and V_GS = 0 V, with reverse recovery time of 130–200 ns and Q_rr = 0.52–1.2 µC. These parameters are critical for evaluating commutation losses in synchronous rectification or freewheeling applications. The diode is not optimized for ultra-fast recovery but is fully characterized for standard hard-switched topologies.

Is SUP57N20-33-E3 suitable for use in avalanche-rated circuits, and what is its single-pulse energy rating?

Yes, SUP57N20-33-E3 is specified for unclamped inductive switching with a single-pulse avalanche energy rating of 61 mJ at L = 0.1 mH, tested per JEDEC standards. This rating validates its ability to absorb transient energy during turn-off in inductive loads without failure. Designers must ensure that actual circuit conditions (inductance, peak current, voltage) fall within the SOA-defined avalanche boundary. The device is not rated for repetitive avalanche operation unless explicitly qualified per application-specific testing.

What is the gate threshold voltage range for SUP57N20-33-E3, and how does it affect drive requirements?

The gate threshold voltage (V_GS(th)) for SUP57N20-33-E3 is 2–4 V at I_D = 250 µA, indicating it is a logic-level-compatible MOSFET. However, full enhancement and minimum r_DS(on) require V_GS ≥ 10 V. Gate drive circuits must supply ≥10 V with sufficient peak current (≥1 A) to charge Q_g = 90–130 nC rapidly. Operating near V_GS(th) results in high on-resistance and thermal instability; therefore, SUP57N20-33-E3 should always be driven with a well-regulated 10–15 V gate supply.

How does the drain-connected tab of SUP57N20-33-E3 impact PCB layout and thermal design?

The drain-connected metal tab in SUP57N20-33-E3 requires electrical isolation from the heatsink or chassis unless the drain node is at ground potential. Standard practice uses mica or ceramic washers with thermal grease, or insulated mounting kits. PCB copper pour under the tab must be tied to drain net and sized per IPC-2221 for current and thermal capacity. Failure to isolate or undersize the drain copper increases risk of short circuits and thermal bottlenecking, directly impacting R_thJC performance and long-term reliability of SUP57N20-33-E3.

SUP57N20-33-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 57A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 33mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.75W (Ta), 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP57N20-33-E3 FAQ

1.How can I place an order for SUP57N20-33-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP57N20-33-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP57N20-33-E3 reliable?

The price and inventory of SUP57N20-33-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP57N20-33-E3 is usually 5 days.

3.What payment methods are accepted for SUP57N20-33-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP57N20-33-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP57N20-33-E3?

SUP57N20-33-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP57N20-33-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP57N20-33-E3?

For technical support, including SUP57N20-33-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP57N20-33-E3 requirements.

6.How does Aetrix verify that SUP57N20-33-E3 is sourced from the original manufacturer or authorized distributors?

All SUP57N20-33-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP57N20-33-E3 meets industry standards.

7.What is the process for return or replacement of SUP57N20-33-E3?

All SUP57N20-33-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP57N20-33-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP57N20-33-E3 part is unused and in its original packaging.

Return procedure for SUP57N20-33-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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