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Vishay Siliconix SUP60020E-GE3
- Part No.:
- SUP60020E-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SUP60020E-GE3.pdf
- Description:
- MOSFET N-CH 80V 150A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:500
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Product details
Overview
SUP60020E-GE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® power MOSFET in TO-220AB package, rated for 150 A continuous drain current at TC = 25 °C, with RDS(on) of 2.4 mΩ at VGS = 10 V and 2.8 mΩ at VGS = 7.5 V, designed for high-efficiency secondary synchronous rectification in server power supplies.
For engineers reviewing the SUP60020E-GE3 datasheet, SUP60020E-GE3 pinout, SUP60020E-GE3 application, or SUP60020E-GE3 equivalent, key selection criteria include its 175 °C maximum junction temperature, 151.2 nC total gate charge, 0.4 °C/W junction-to-case thermal resistance, and robust 180 mJ single-pulse avalanche energy rating.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with minimized Qgd (24 nC), reducing switching losses during Miller plateau transition. Its SOA is limited by RDS(on) at low VDS and by avalanche capability at high VDS/pulsed conditions.
The device integrates a body diode with 0.75–1.5 V forward voltage at 10 A and 80–160 ns reverse recovery time, supporting bidirectional current handling in OR-ing and e-fuse topologies. Thermal design relies on direct case-to-heatsink mounting, leveraging its 0.4 °C/W RthJC for high-power dissipation up to 375 W at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 80 V - supports 48 V input bus systems with 20 % margin against transients |
| RDS(on) @ 10 V | 2.4 mΩ - enables <1.5 W conduction loss at 40 A DC current |
| Qg total | 151.2 nC - determines gate drive power requirement and switching speed trade-off |
| ID continuous | 150 A @ TC = 25 °C - requires active heatsinking for sustained operation above 70 °C case temp |
| EAS | 180 mJ - withstands inductive turn-off energy without failure in motor drive or DC/AC inverter snubbing |
| RthJC | 0.4 °C/W - mandates mechanical interface <0.1 mm thermal pad thickness for optimal heat transfer to heatsink |
| VGS(th) | 2–4 V - ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting, 15.49 mm × 10.51 mm × 14.02 mm footprint, and heatsink hole for mechanical retention.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main power output terminal | Internally connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits |
| G (Gate) | Control input | High-impedance node requiring low-inductance PCB routing and gate resistor (1–10 Ω typical) to damp oscillation |
| S (Source) | Power return/reference node | Common reference for gate drive; source inductance directly impacts switching stability and dV/dt immunity |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables ultra-low RDS(on) while maintaining rugged avalanche performance and stable threshold over temperature |
| 100 % Rg tested | Guarantees gate resistance between 0.34 Ω and 3.4 Ω, critical for consistent gate drive timing and EMI control |
| 175 °C TJ max | Supports operation in sealed enclosures or high-ambient environments without derating below 125 °C ambient |
| Very low Qgd | 24 nC minimizes Miller-induced shoot-through risk and reduces required gate drive energy during hard-switching |
| 100 % UIS tested | Each unit validated for unclamped inductive switching stress, ensuring reliability in motor drive and converter freewheeling |
Applications
| Server Power Supply Secondary Side | Industrial DC/DC Converter |
|---|---|
Use Scenario: High-current synchronous rectification in 12 V or 5 V output rails of 1 kW+ telecom/server PSUs. IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diodes to reduce conduction loss and improve efficiency >95 % at full load. Use Value: 2.4 mΩ RDS(on) cuts rectifier loss by ~60 % vs. 40 V Schottky, enabling higher power density and lower thermal design cost. | Use Scenario: Primary-side or secondary-side switching in isolated 48 V–12 V industrial DC/DC modules for PLCs and HMIs. IC Role / Device Role / Timing Role: Main power switch in half-bridge or synchronous buck topology operating at 100–500 kHz. Use Value: 151.2 nC Qg allows clean turn-on/turn-off with standard 2 A gate drivers, minimizing dead-time loss and improving light-load efficiency. |
| Power Tool Motor Drive | Battery Management System e-Fuse |
Use Scenario: Half-bridge H-bridge driver for brushed DC motors in cordless drills and impact drivers (18–40 V battery packs). IC Role / Device Role / Timing Role: High-current, high-dV/dt switching element handling 150 A peak pulses during stall or acceleration. Use Value: 500 A pulsed drain rating and 180 mJ avalanche energy prevent failure during motor commutation spikes and load dump events. | Use Scenario: Solid-state OR-ing and overcurrent protection in multi-cell Li-ion battery packs for UPS and portable medical devices. IC Role / Device Role / Timing Role: Bidirectional current path with integrated body diode used for reverse polarity protection and controlled turn-off during fault. Use Value: 0.75–1.5 V VSD and 80–160 ns trr enable fast, low-loss reverse conduction and precise current limiting via external sense resistor. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFB4115PBF | 80 V, 140 A, RDS(on) = 2.7 mΩ @ 10 V, Qg = 160 nC, TO-220 package | Slightly higher RDS(on) and Qg; lower ID rating; same thermal interface | Acceptable where 0.3 mΩ RDS(on) margin is not critical and gate drive capability accommodates +6 % Qg |
| STP150N8F6 | 80 V, 150 A, RDS(on) = 2.3 mΩ @ 10 V, Qg = 132 nC, TO-220FP package (full-pack) | Lower Qg improves switching efficiency; TO-220FP has insulated tab but lower PD rating (125 W) | Preferred for space-constrained designs needing lower gate drive loss, but requires verification of thermal interface under 375 W peak dissipation |
Compared with IRFB4115PBF and STP150N8F6, SUP60020E-GE3 delivers the lowest RDS(on) × Qg figure-of-merit (363 mΩ·nC) among TO-220 variants, making it optimal for high-current, medium-frequency (<300 kHz) applications where conduction loss dominates.
Availability
SUP60020E-GE3 is available at Aetrix Electronics and suitable for server power supply secondary rectification, industrial DC/DC converters, and battery management systems requiring stable component supply and long-term industrial lifecycle support.
Supply support for SUP60020E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The SUP60020E-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered for high-current, high-efficiency switching in enterprise and industrial power conversion systems.
FAQ
What is the maximum continuous drain current rating for SUP60020E-GE3 at 70 °C case temperature?
SUP60020E-GE3 maintains a continuous drain current rating of 150 A at TC = 70 °C, per the Absolute Maximum Ratings table. This reflects its robust thermal design and 175 °C maximum junction temperature, allowing sustained high-current operation without derating until case temperatures exceed 70 °C.
Does SUP60020E-GE3 have an insulated tab, and how does that affect heatsink mounting?
SUP60020E-GE3 uses a TO-220AB package with a non-insulated drain-connected tab. The tab must be electrically isolated from the heatsink using a mica or polymer insulator and thermal compound unless the heatsink is referenced to system ground and compatible with drain potential. Failure to isolate may cause short circuits or safety hazards.
What is the typical gate threshold voltage range for SUP60020E-GE3, and why does it matter for gate drive design?
The gate threshold voltage (VGS(th)) for SUP60020E-GE3 is specified as 2–4 V at TJ = 25 °C. This range ensures compatibility with both 3.3 V and 5 V logic-level gate drivers while providing sufficient noise margin. Designers must ensure gate drive voltage exceeds 4 V to guarantee full enhancement across temperature and process variation.
How is the avalanche capability of SUP60020E-GE3 verified, and what real-world conditions does it protect against?
SUP60020E-GE3 undergoes 100 % unclamped inductive switching (UIS) testing per JEDEC standards, with a guaranteed single-pulse avalanche energy (EAS) of 180 mJ. This protects against voltage spikes caused by inductive load turn-off in motor drives, DC/AC inverters, and relay coil suppression-preventing catastrophic failure during transient overvoltage events.
Can SUP60020E-GE3 be used in parallel configurations, and what layout considerations are essential?
Yes, SUP60020E-GE3 supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing. Critical layout requirements include matched gate trace lengths, individual gate resistors (≤5 Ω), Kelvin-source connections to minimize common-source inductance, and symmetrical power loop geometry to avoid dynamic current imbalance.
SUP60020E-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.4mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 227 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 10680 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SUP60020E-GE3 FAQ
1.How can I place an order for SUP60020E-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUP60020E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUP60020E-GE3 reliable?
The price and inventory of SUP60020E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP60020E-GE3 is usually 5 days.
3.What payment methods are accepted for SUP60020E-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP60020E-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUP60020E-GE3?
SUP60020E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUP60020E-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUP60020E-GE3?
For technical support, including SUP60020E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP60020E-GE3 requirements.
6.How does Aetrix verify that SUP60020E-GE3 is sourced from the original manufacturer or authorized distributors?
All SUP60020E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP60020E-GE3 meets industry standards.
7.What is the process for return or replacement of SUP60020E-GE3?
All SUP60020E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP60020E-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUP60020E-GE3 part is unused and in its original packaging.
Return procedure for SUP60020E-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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