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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP60030E-GE3

Name: SUP60030E-GE3
Brand: Vishay Siliconix
SKU: SUP60030E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP60030E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP60030E-GE3.pdf

Description:: MOSFET N-CH 80V 120A TO220AB

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Product details

Overview

SUP60030E-GE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® power MOSFET in TO-220AB package, rated for 120 A continuous drain current at TJ = 150 °C, with RDS(on) of 0.0034 Ω at VGS = 10 V and 94 nC total gate charge - optimized for high-efficiency secondary synchronous rectification in server PSUs and telecom DC/DC converters.

For engineers reviewing the SUP60030E-GE3 datasheet, SUP60030E-GE3 pinout, SUP60030E-GE3 application, or SUP60030E-GE3 equivalent, this device's low Qgd (10 nC), 175 °C max junction temperature, and 100 % UIS testing support robust switching in high-power motor drives and battery management systems where thermal margin and avalanche ruggedness are critical.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance and fast switching dynamics. Its 0.4 °C/W junction-to-case thermal resistance enables high-power dissipation when mounted on heatsinks, while the 348 pF reverse transfer capacitance (Crss) and 24 ns turn-on delay support operation up to several hundred kHz in hard-switched topologies.

The device features a built-in body diode with 0.8–1.5 V forward voltage at 10 A and 126–190 ns reverse recovery time, making it suitable for freewheeling and synchronous rectification roles without external diodes. Gate threshold voltage is tightly specified between 2 V and 4 V, ensuring stable turn-on across temperature and process variation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports input rails up to 60 V DC/DC stages with 33 % safety margin against transients
R_DS(on) max	0.0034 Ω @ V_GS = 10 V - delivers ≤ 4.9 W conduction loss at 120 A, enabling >98 % efficiency in 48 V output converters
I_D continuous	120 A @ T_C = 25 °C - sustains full load in high-current industrial motor drivers with active heatsinking
Q_g typ	94 nC - determines gate drive power requirement (~1.9 mW per MHz at 10 V swing) for PWM controllers
E_AS	245 mJ - withstands single inductive energy spikes from 70 A avalanche current, protecting against short-circuit faults
R_thJC	0.4 °C/W - allows 375 W max power dissipation with <15 °C case-to-junction rise at full rated current
V_GS(th)	2–4 V - ensures reliable enhancement-mode turn-on with standard 5 V or 3.3 V logic-level gate drivers

Pinout & Package

TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting, 14.85–15.49 mm length, 10.04–10.51 mm width, and 13.35–14.02 mm height. Tab is electrically connected to drain for direct heatsink coupling.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically tied to metal tab - must be insulated from chassis unless referenced to system ground; primary thermal path to heatsink
Source	Reference node for gate control and current return	Low-impedance return path for load current; used as common reference for gate driver supply and current sensing
Gate	Control terminal for channel conduction	High-impedance input requiring <2.8 Ω gate resistance to damp ringing; sensitive to ESD (±20 V rating)

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.0034 Ω R_DS(on) in TO-220AB - 30 % lower on-resistance than planar equivalents at same voltage rating
100 % UIS tested	Each unit validated for unclamped inductive switching up to 245 mJ - guarantees ruggedness in motor drive and inverter fault conditions
Very low Q_gd (10 nC)	Reduces Miller plateau time and switching losses by >25 % vs. comparable 80 V MOSFETs with similar Q_g
175 °C max junction temperature	Supports operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial PLCs) without derating
Pb-free and halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc#99912 - suitable for green manufacturing programs

Applications

Server Power Supply	Industrial Motor Drive
Use Scenario: Secondary-side synchronous rectification in 48 V output, 1.5 kW telecom PSUs operating at 200–300 kHz. IC Role / Device Role / Timing Role: High-side switch replacing Schottky diodes to reduce conduction loss and improve efficiency. Use Value: Achieves 0.8–1.2 % absolute efficiency gain over 40 V Schottky solutions due to 0.0034 Ω R_DS(on) and low Q_gd-driven fast turn-off.	Use Scenario: Half-bridge leg in 3-phase BLDC motor controller for cordless power tools delivering 500 W mechanical output. IC Role / Device Role / Timing Role: Low-side switching element handling 120 A peak phase current with 100 μs pulse width. Use Value: Sustains 250 A pulsed drain current and 245 mJ avalanche energy during commutation faults - eliminates need for external snubbers.
Battery Management System	DC/AC Inverter
Use Scenario: Main discharge switch in 48 V Li-ion battery pack for e-bikes, supporting 100 A continuous and 250 A surge current. IC Role / Device Role / Timing Role: Bidirectional load switch controlling pack connection to inverter stage and regenerative braking path. Use Value: Body diode V_SD = 0.8–1.5 V at 10 A enables efficient regen current flow without external diode; R_thJC = 0.4 °C/W maintains <110 °C junction at 100 A.	Use Scenario: H-bridge switching element in 1.2 kW solar microinverter converting 40–60 V DC to 230 V AC at 50 Hz with high-frequency PWM. IC Role / Device Role / Timing Role: Fast-switching power stage component handling bidirectional current and voltage reversal stress. Use Value: 80 V V_DS rating provides 33 % margin above 60 V PV string max; Crss = 348 pF minimizes shoot-through risk during dead-time transitions.

Server Power Supply

Industrial Motor Drive

Use Scenario: Secondary-side synchronous rectification in 48 V output, 1.5 kW telecom PSUs operating at 200–300 kHz.

IC Role / Device Role / Timing Role: High-side switch replacing Schottky diodes to reduce conduction loss and improve efficiency.

Use Value: Achieves 0.8–1.2 % absolute efficiency gain over 40 V Schottky solutions due to 0.0034 Ω R_DS(on) and low Q_gd-driven fast turn-off.

Use Scenario: Half-bridge leg in 3-phase BLDC motor controller for cordless power tools delivering 500 W mechanical output.

IC Role / Device Role / Timing Role: Low-side switching element handling 120 A peak phase current with 100 μs pulse width.

Use Value: Sustains 250 A pulsed drain current and 245 mJ avalanche energy during commutation faults - eliminates need for external snubbers.

Battery Management System

DC/AC Inverter

Use Scenario: Main discharge switch in 48 V Li-ion battery pack for e-bikes, supporting 100 A continuous and 250 A surge current.

IC Role / Device Role / Timing Role: Bidirectional load switch controlling pack connection to inverter stage and regenerative braking path.

Use Value: Body diode V_SD = 0.8–1.5 V at 10 A enables efficient regen current flow without external diode; R_thJC = 0.4 °C/W maintains <110 °C junction at 100 A.

Use Scenario: H-bridge switching element in 1.2 kW solar microinverter converting 40–60 V DC to 230 V AC at 50 Hz with high-frequency PWM.

IC Role / Device Role / Timing Role: Fast-switching power stage component handling bidirectional current and voltage reversal stress.

Use Value: 80 V V_DS rating provides 33 % margin above 60 V PV string max; Crss = 348 pF minimizes shoot-through risk during dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 0.020 Ω @ 10 V (5.9× higher); Q_g = 131 nC; TO-220AB package	Higher conduction and switching losses limit use to <50 A continuous; unsuitable for high-frequency sync rectification	Select only if cost sensitivity outweighs efficiency requirements and thermal constraints allow higher R_DS(on) penalty.
STP120N80M5	R_DS(on) = 0.0055 Ω @ 10 V (1.6× higher); Q_gd = 14.5 nC; TO-247 package (larger footprint)	Requires PCB layout change; higher R_DS(on) increases conduction loss by ~60 % at 120 A	Preferable only when TO-247 mounting and higher avalanche rating (E_AS = 420 mJ) justify redesign effort and cost premium.

Compared with IRF1404PBF and STP120N80M5, SUP60030E-GE3 delivers the lowest R_DS(on) and Q_gd in TO-220AB form factor, enabling highest power density and efficiency in space-constrained 100+ A applications without changing package or footprint.

Availability

SUP60030E-GE3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and battery management systems requiring stable component supply with full RoHS compliance and long-term lifecycle assurance.

Supply support for SUP60030E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SUP60030E-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency DC/DC conversion and motor control where low R_DS(on), fast switching, and avalanche reliability are essential.

FAQ

What is the maximum continuous drain current rating for SUP60030E-GE3?

The SUP60030E-GE3 is rated for 120 A continuous drain current at case temperature (T_C) = 25 °C and junction temperature (T_J) = 150 °C. At T_C = 70 °C, the rating remains 120 A due to its low R_thJC of 0.4 °C/W and robust thermal design. Derating applies only beyond 150 °C T_J.

Does SUP60030E-GE3 have a built-in body diode, and what are its key characteristics?

Yes, SUP60030E-GE3 integrates a parasitic body diode with forward voltage V_SD = 0.8–1.5 V at I_F = 10 A and V_GS = 0 V. Its reverse recovery time is 126–190 ns, and Q_rr is 0.315–0.475 μC - enabling use in freewheeling and synchronous rectification without external diodes in many designs.

What is the gate threshold voltage range for SUP60030E-GE3, and how does it affect drive compatibility?

The gate threshold voltage (V_GS(th)) for SUP60030E-GE3 is specified from 2 V to 4 V at I_D = 250 μA. This range ensures reliable turn-on with standard 5 V logic-level gate drivers and compatibility with 3.3 V microcontrollers when using appropriate gate resistors and layout practices to avoid false triggering.

Is SUP60030E-GE3 suitable for avalanche-rated applications, and what is its single-pulse energy rating?

Yes, SUP60030E-GE3 is 100 % UIS tested and rated for single-pulse avalanche energy (E_AS) of 245 mJ at L = 0.1 mH. This makes it suitable for inductive switching applications like motor drives and DC/AC inverters where transient overvoltage events may occur during fault conditions.

What thermal resistance values define the SUP60030E-GE3's cooling performance?

SUP60030E-GE3 has a junction-to-case thermal resistance (R_thJC) of 0.4 °C/W and junction-to-ambient (R_thJA) of 40 °C/W on a 1" × 1" FR4 PCB. The low R_thJC enables efficient heat transfer to external heatsinks, while R_thJA reflects natural convection limits - confirming the necessity of heatsinking for sustained >50 A operation.

SUP60030E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 141 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7910 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP60030E-GE3 FAQ

1.How can I place an order for SUP60030E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP60030E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP60030E-GE3 reliable?

The price and inventory of SUP60030E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP60030E-GE3 is usually 5 days.

3.What payment methods are accepted for SUP60030E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP60030E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP60030E-GE3?

SUP60030E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP60030E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP60030E-GE3?

For technical support, including SUP60030E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP60030E-GE3 requirements.

6.How does Aetrix verify that SUP60030E-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP60030E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP60030E-GE3 meets industry standards.

7.What is the process for return or replacement of SUP60030E-GE3?

All SUP60030E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP60030E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP60030E-GE3 part is unused and in its original packaging.

Return procedure for SUP60030E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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