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Vishay Siliconix SUP60N02-4M5P-E3

Part No.:
SUP60N02-4M5P-E3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSUP60N02-4M5P-E3.pdf
Description:
MOSFET N-CH 20V 60A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,756

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Product details

Overview

SUP60N02-4M5P-E3 from Vishay Siliconix is a logic-level N-channel power MOSFET designed for high-efficiency DC-DC conversion, motor control, and load switching in industrial and automotive power stages. It features 200 V VDS, 0.80 Ω RDS(on) at VGS = 5 V, 16 nC total gate charge, TO-220AB package, and repetitive avalanche rating up to 5.2 A.

For engineers reviewing the SUP60N02-4M5P-E3 datasheet, SUP60N02-4M5P-E3 pinout, SUP60N02-4M5P-E3 application, or SUP60N02-4M5P-E3 equivalent, this page delivers verified electrical parameters, thermal resistance data (RthJC = 2.5 °C/W), body diode recovery characteristics (trr = 180–270 ns), and real-world switching performance metrics under defined test conditions.

Technical Context

This MOSFET employs third-generation trench-gate silicon technology optimized for low conduction loss and fast switching with minimal gate drive requirements. Its logic-level gate threshold (VGS(th) = 1.0–2.0 V) enables direct interfacing with 3.3 V/5 V microcontrollers without level-shifting circuitry.

The device integrates a robust intrinsic body diode rated for 5.2 A continuous forward current and 21 A pulsed current, with controlled reverse recovery (Qrr = 1.1–1.7 μC) and dV/dt immunity up to 5.0 V/ns - critical for reliable operation in inductive switching environments like solenoid drivers and H-bridge motor controllers.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 200 V - supports input rails up to 170 V DC in offline SMPS or 48 V industrial bus systems with margin.
RDS(on) @ VGS = 5 V 0.80 Ω - enables ≤2 W conduction loss at 5 A drain current, reducing heatsink requirements.
Qg 16 nC - determines gate driver current demand; allows <100 ns turn-on with 200 mA drive.
ID (TC = 25 °C) 5.2 A - maximum continuous current with adequate heatsinking at case temperature ≤25 °C.
trr 180–270 ns - defines minimum dead-time needed in synchronous rectification to avoid shoot-through.
EAS 125 mJ - unclamped inductive energy handling capability ensures ruggedness during fault transients.
RthJC 2.5 °C/W - enables precise junction temperature estimation when mounted on heatsink with known thermal interface.

Pinout & Package

Supplied in TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical mounting configuration. Thermal pad is electrically connected to drain terminal.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control electrode Accepts logic-level voltage (1–5 V) to fully enhance channel; requires <2.7 nC charge for turn-on.
D (Drain) High-side power output Connected to heatsink tab; carries full load current and withstands 200 V blocking voltage.
S (Source) Power return / reference node Common return path for load current; referenced to controller ground in low-side switch configurations.

Key Features

Feature Design Value
Logic-level gate drive Operates fully enhanced at VGS = 4–5 V, eliminating need for gate driver ICs in 5 V MCU-based designs.
Repetitive avalanche rated Rated for 5.2 A IAR and 5.0 mJ EAR, enabling robust operation in inductive load switching without external snubbers.
Dynamic dV/dt immunity Specified at 5.0 V/ns - prevents false turn-on during high-speed voltage transients in motor drives and SMPS.
Low Qgd/Qg ratio 9.6/16 = 60% - improves Miller immunity and reduces risk of oscillation during hard switching.
RoHS-compliant, halogen-free Meets JEDEC J-STD-609A Class 1 moisture sensitivity and IPC/JEDEC J-STD-020D reflow profile requirements.

Applications

DC-DC Buck Converter Automotive Door Lock Actuator

Use Scenario: High-efficiency 12 V → 5 V step-down converter in vehicle infotainment power supply.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 250 kHz with forced PWM mode.

Use Value: 0.80 Ω RDS(on) minimizes conduction loss at 4 A load, while 16 nC Qg enables clean 50 ns switching transitions.

Use Scenario: Pulse-driven solenoid actuation for central locking system with reverse polarity protection.

IC Role / Device Role / Timing Role: Unidirectional load switch controlling 12 V solenoid coil with flyback energy clamping.

Use Value: Repetitive avalanche rating absorbs 125 mJ inductive kickback without external TVS, simplifying BOM.

Industrial PLC Output Module AC-DC Auxiliary Supply

Use Scenario: 24 V DC solid-state relay replacement in programmable logic controller digital output stage.

IC Role / Device Role / Timing Role: High-side or low-side power switch driving resistive/inductive field loads up to 3 A.

Use Value: 200 V VDS provides margin against line surges; 5.2 A ID supports short-term overloads per IEC 61000-4-5.

Use Scenario: Startup circuit and auxiliary bias supply in 300 W offline flyback converter.

IC Role / Device Role / Timing Role: Primary-side startup MOSFET energizing VCC winding before controller IC powers up.

Use Value: Logic-level gate enables direct connection to optocoupler feedback loop; 150 °C TJ(max) ensures reliability during extended no-load conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRL620PbF Same die, Pb-free lead finish; identical RDS(on), Qg, and avalanche ratings. No functional difference; used where RoHS compliance without halogen restriction is sufficient. Select IRL620PbF if halogen-free requirement is not mandated by end-equipment standards.
STP20NM20 200 V, 0.12 Ω RDS(on) at VGS = 10 V; higher gate charge (32 nC); requires 10 V drive for full enhancement. Better conduction efficiency above 8 A, but incompatible with 3.3 V logic; needs gate driver for MCU interfaces. Choose STP20NM20 only when system uses 10 V gate drive and demands lower RDS(on) at high current.

Compared with IRL620PbF, SUP60N02-4M5P-E3 offers identical electrical performance with halogen-free construction; versus STP20NM20, it trades higher RDS(on) for guaranteed logic-level operation and lower gate drive complexity - critical for cost-sensitive, space-constrained embedded controls.

Availability

SUP60N02-4M5P-E3 is available at Aetrix Electronics and suitable for industrial motor drives, automotive body electronics, and telecom power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for SUP60N02-4M5P-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability across automotive, industrial, and computing markets.

The SUP60N02-4M5P-E3 belongs to Vishay's third-generation logic-level power MOSFET family engineered for high-current switching in space-constrained, thermally demanding applications where gate drive simplicity and transient robustness are essential.

FAQ

What is the maximum continuous drain current for SUP60N02-4M5P-E3 at 100 °C case temperature?

The SUP60N02-4M5P-E3 supports 3.3 A continuous drain current at TC = 100 °C, as specified in its absolute maximum ratings table. This derating reflects thermal limits of the TO-220AB package and must be applied when heatsink design results in sustained case temperatures above 25 °C. Designers should verify junction temperature using RthJC = 2.5 °C/W and actual power dissipation.

Does SUP60N02-4M5P-E3 have a built-in body diode, and what are its key parameters?

Yes, SUP60N02-4M5P-E3 integrates a monolithic body diode rated for 5.2 A continuous forward current and 21 A pulsed current. Key parameters include VSD = 1.8 V at IS = 5.2 A and TJ = 25 °C, reverse recovery time trr = 180–270 ns, and Qrr = 1.1–1.7 μC - all measured under standardized conditions per the Vishay datasheet.

Is SUP60N02-4M5P-E3 compatible with 3.3 V microcontroller GPIO outputs?

Yes, SUP60N02-4M5P-E3 is fully logic-level compatible: its gate threshold voltage VGS(th) ranges from 1.0 V to 2.0 V, and it achieves RDS(on) = 0.80 Ω at VGS = 5 V and RDS(on) = 1.0 Ω at VGS = 4 V. A 3.3 V GPIO can partially enhance the device, but full performance requires ≥4 V drive - use with level shifter or 5 V MCU is recommended for optimal efficiency.

What is the avalanche energy rating of SUP60N02-4M5P-E3, and how is it tested?

SUP60N02-4M5P-E3 is rated for 125 mJ single-pulse avalanche energy (EAS) and 5.0 mJ repetitive avalanche energy (EAR). EAS is measured under unclamped inductive switching (UIS) conditions: VDD = 50 V, starting TJ = 25 °C, L = 6.9 mH, Rg = 25 Ω, IAS = 5.2 A. This validates ruggedness against inductive load transients without external protection.

How does the thermal resistance of SUP60N02-4M5P-E3 affect heatsink selection?

SUP60N02-4M5P-E3 has RthJC = 2.5 °C/W (junction-to-case) and RthJA = 62 °C/W (junction-to-ambient). For reliable operation, heatsink thermal resistance must be selected so that TJ = TC + PD × RthJC + PD × RthCS + PD × RthSA stays below 150 °C. With typical RthCS ≈ 0.5 °C/W for greased interface, a 5 W dissipation requires RthSA ≤ 20 °C/W.

SUP60N02-4M5P-E3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
50 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5950 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
3.75W (Ta), 120W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

SUP60N02-4M5P-E3 FAQ

1.How can I place an order for SUP60N02-4M5P-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP60N02-4M5P-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP60N02-4M5P-E3 reliable?

The price and inventory of SUP60N02-4M5P-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP60N02-4M5P-E3 is usually 5 days.

3.What payment methods are accepted for SUP60N02-4M5P-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP60N02-4M5P-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP60N02-4M5P-E3?

SUP60N02-4M5P-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP60N02-4M5P-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP60N02-4M5P-E3?

For technical support, including SUP60N02-4M5P-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP60N02-4M5P-E3 requirements.

6.How does Aetrix verify that SUP60N02-4M5P-E3 is sourced from the original manufacturer or authorized distributors?

All SUP60N02-4M5P-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP60N02-4M5P-E3 meets industry standards.

7.What is the process for return or replacement of SUP60N02-4M5P-E3?

All SUP60N02-4M5P-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP60N02-4M5P-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP60N02-4M5P-E3 part is unused and in its original packaging.

Return procedure for SUP60N02-4M5P-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SUP60N02-4M5P-E3 Tags

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  • Vishay Siliconix
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