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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP60N06-12P-E3

Name: SUP60N06-12P-E3
Brand: Vishay Siliconix
SKU: SUP60N06-12P-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP60N06-12P-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP60N06-12P-E3.pdf

Description:: MOSFET N-CH 60V 60A TO220AB

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Product details

Overview

SUP60N06-12P-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 60 V V_DS, 60 A continuous drain current (package-limited), and 12.0 mΩ R_DS(on) at V_GS = 10 V. It features 100 % R_g and UIS testing, RoHS-compliant Pb-free construction, and is optimized for synchronous rectification and high-efficiency DC/DC power supplies.

For engineers reviewing the SUP60N06-12P-E3 datasheet, SUP60N06-12P-E3 pinout, SUP60N06-12P-E3 application, or SUP60N06-12P-E3 equivalent, key selection criteria include its 1.25 °C/W R_thJC, 33 nC total gate charge, 1970 pF C_iss, TO-220AB package thermal performance, and verified avalanche energy rating of 80 mJ.

Technical Context

This device employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Q_g/Q_gd ratio (33 nC / 9 nC). Its gate threshold voltage range (2.5–4.5 V) ensures robust turn-on margin under varying drive conditions while maintaining low leakage (±250 nA I_GSS).

The integrated body diode supports synchronous rectifier operation with 0.84–1.5 V forward voltage at 10 A and 40–80 ns reverse recovery time. Thermal design is anchored by a junction-to-case resistance of 1.25 °C/W and a maximum power dissipation of 100 W at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage before breakdown; defines use in ≤48 V bus systems with safety margin.
R_DS(on)	0.012 Ω @ V_GS = 10 V, I_D = 30 A - Enables <1.1 W conduction loss at 30 A, critical for thermal management in compact PSUs.
I_D (continuous)	60 A (T_J = 150 °C, package-limited) - Supports high-current output stages without parallel devices in TO-220AB footprint.
Q_g	33 nC (typ.) - Low gate charge reduces driver power and switching losses in high-frequency (>100 kHz) converters.
R_thJC	1.25 °C/W - Enables direct heatsink mounting for efficient thermal transfer; allows >80 W sustained power with modest heatsinking.
E_AS	80 mJ (L = 0.1 mH) - Confirmed single-pulse avalanche capability improves reliability during inductive load switching transients.
C_iss	1970 pF @ V_DS = 30 V - Predictable input capacitance aids gate drive design and EMI filtering in hard-switched topologies.

Pinout & Package

Supplied in TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole configuration. Mounting requires mechanical isolation unless drain is referenced to heatsink potential.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≥2.5 V V_GS(th) to turn on; max ±20 V rating limits driver voltage swing.
D	Drain	Main high-side current path; electrically connected to metal tab; must be insulated from heatsink unless system ground-referenced.
S	Source	Reference node for gate drive and current sensing; ties to power ground or low-side switch source in half-bridge configurations.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × area efficiency for TO-220AB, reducing board space and conduction losses in high-current paths.
100 % R_g tested	Ensures consistent gate resistance (0.3–2.8 Ω), enabling predictable rise/fall times and reliable paralleling behavior.
100 % UIS tested	Guarantees robustness against unclamped inductive switching events without derating, critical for motor drive and SMPS flyback stages.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC requirements for environmentally constrained industrial and telecom applications.

Applications

Server VRM Output Stage	Industrial DC/DC Converter
Use Scenario: High-current, high-efficiency buck converter delivering 12 V @ 50+ A to CPU/GPU cores in data center servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in multiphase buck topology, operating at 300–600 kHz with precise gate timing. Use Value: 0.012 Ω R_DS(on) minimizes I²R losses at full load, while 33 nC Q_g enables efficient high-frequency switching with standard gate drivers.	Use Scenario: 48 V to 12 V isolated DC/DC module for factory automation PLCs requiring long-term reliability and thermal stability. IC Role / Device Role / Timing Role: Primary-side switching MOSFET in active-clamp forward or LLC resonant converter, handling repetitive 60 A peak currents. Use Value: 80 mJ E_AS rating and 1.25 °C/W R_thJC ensure survival under transient overloads and sustained 85 °C ambient operation.
Telecom Rectifier Module	EV Onboard Charger Auxiliary Stage
Use Scenario: 54 V input telecom rectifier supplying +48 V DC with >96 % efficiency and strict thermal envelope constraints. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge topology, replacing Schottky diodes to reduce forward drop. Use Value: 0.84 V V_SD body diode forward voltage and fast 40 ns t_rr minimize dead-time losses and improve light-load efficiency.	Use Scenario: 400 V to 12 V auxiliary power supply in EV onboard chargers, powering control circuitry under wide ambient temperature range (-40 to +105 °C). IC Role / Device Role / Timing Role: Primary-side switch in flyback converter, operating with variable duty cycle and high-voltage stress during cold cranking. Use Value: 60 V V_DS rating with 150 °C T_J(max) and -55 °C T_stg support automotive-grade thermal cycling and startup surge resilience.

Server VRM Output Stage

Industrial DC/DC Converter

Use Scenario: High-current, high-efficiency buck converter delivering 12 V @ 50+ A to CPU/GPU cores in data center servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in multiphase buck topology, operating at 300–600 kHz with precise gate timing.

Use Value: 0.012 Ω R_DS(on) minimizes I²R losses at full load, while 33 nC Q_g enables efficient high-frequency switching with standard gate drivers.

Use Scenario: 48 V to 12 V isolated DC/DC module for factory automation PLCs requiring long-term reliability and thermal stability.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in active-clamp forward or LLC resonant converter, handling repetitive 60 A peak currents.

Use Value: 80 mJ E_AS rating and 1.25 °C/W R_thJC ensure survival under transient overloads and sustained 85 °C ambient operation.

Telecom Rectifier Module

EV Onboard Charger Auxiliary Stage

Use Scenario: 54 V input telecom rectifier supplying +48 V DC with >96 % efficiency and strict thermal envelope constraints.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge topology, replacing Schottky diodes to reduce forward drop.

Use Value: 0.84 V V_SD body diode forward voltage and fast 40 ns t_rr minimize dead-time losses and improve light-load efficiency.

Use Scenario: 400 V to 12 V auxiliary power supply in EV onboard chargers, powering control circuitry under wide ambient temperature range (-40 to +105 °C).

IC Role / Device Role / Timing Role: Primary-side switch in flyback converter, operating with variable duty cycle and high-voltage stress during cold cranking.

Use Value: 60 V V_DS rating with 150 °C T_J(max) and -55 °C T_stg support automotive-grade thermal cycling and startup surge resilience.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06L	R_DS(on) = 0.014 Ω @ 10 V; higher C_iss (2200 pF); no UIS test documentation	Same TO-220AB package but lower avalanche ruggedness; less suitable for inductive switching stress	Acceptable where cost sensitivity outweighs transient robustness; verify SOA compliance per design.
IRFZ44NPBF	R_DS(on) = 0.028 Ω @ 10 V; 50 A I_D; older planar process; higher Q_g (67 nC)	Larger conduction loss and slower switching; limited to ≤100 kHz operation	Only for legacy redesigns with fixed layout; not recommended for new high-efficiency designs targeting >95 % efficiency.

Compared with STP60NF06L and IRFZ44NPBF, the SUP60N06-12P-E3 delivers superior conduction efficiency, lower gate drive demand, and verified avalanche immunity-making it the preferred choice for thermally constrained, high-reliability power conversion where R_DS(on), Q_g, and ruggedness are co-optimized.

Availability

SUP60N06-12P-E3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and telecom rectifier modules requiring stable component supply, long-lifecycle support, and Pb-free compliance.

Supply support for SUP60N06-12P-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.

The SUP60N06-12P-E3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered for high-current, high-frequency switching in enterprise power supplies, industrial converters, and telecom infrastructure where low R_DS(on) and ruggedness are mandatory.

FAQ

What is the maximum continuous drain current rating for the SUP60N06-12P-E3?

The SUP60N06-12P-E3 has a continuous drain current rating of 60 A at T_J = 150 °C, limited by package thermal capability-not silicon. At T_C = 70 °C, the rating drops to 54 A. This value assumes proper heatsinking with R_thJC = 1.25 °C/W and is validated per the SOA curve in the official datasheet (Document Number: 69070).

Is the SUP60N06-12P-E3 suitable for synchronous rectification in a 48 V to 12 V DC/DC converter?

Yes, the SUP60N06-12P-E3 is explicitly listed for synchronous rectifier applications in its datasheet. Its 0.012 Ω R_DS(on) at 10 V gate drive, low 0.84 V body diode forward voltage, and 40 ns reverse recovery time make it highly effective in reducing conduction and switching losses in secondary-side synchronous rectification of 48 V input converters.

Does the SUP60N06-12P-E3 have avalanche capability, and is it production-tested?

Yes, the SUP60N06-12P-E3 is 100 % UIS (unclamped inductive switching) tested per datasheet Document Number 69070, with a specified single-pulse avalanche energy rating of 80 mJ (L = 0.1 mH). This validated ruggedness supports reliable operation in flyback, forward, and LLC converters subject to inductive turn-off transients.

What is the gate threshold voltage range for the SUP60N06-12P-E3, and how does it affect drive design?

The gate threshold voltage (V_GS(th)) for the SUP60N06-12P-E3 is specified from 2.5 V to 4.5 V at I_D = 250 µA. This range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while providing noise margin against false triggering. Drive circuits must supply ≥5 V to guarantee full enhancement across temperature and unit variation.

How does the thermal performance of the SUP60N06-12P-E3 compare to standard TO-220AB MOSFETs?

The SUP60N06-12P-E3 achieves a junction-to-case thermal resistance (R_thJC) of 1.25 °C/W - among the lowest for TO-220AB-packaged MOSFETs. This enables up to 100 W power dissipation at T_C = 25 °C, outperforming typical competitors (often >1.5 °C/W), and supports higher sustained current in space-constrained industrial and telecom power designs.

SUP60N06-12P-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1970 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3.25W (Ta), 100W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP60N06-12P-E3 FAQ

1.How can I place an order for SUP60N06-12P-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP60N06-12P-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP60N06-12P-E3 reliable?

The price and inventory of SUP60N06-12P-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP60N06-12P-E3 is usually 5 days.

3.What payment methods are accepted for SUP60N06-12P-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP60N06-12P-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP60N06-12P-E3?

SUP60N06-12P-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP60N06-12P-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP60N06-12P-E3?

For technical support, including SUP60N06-12P-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP60N06-12P-E3 requirements.

6.How does Aetrix verify that SUP60N06-12P-E3 is sourced from the original manufacturer or authorized distributors?

All SUP60N06-12P-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP60N06-12P-E3 meets industry standards.

7.What is the process for return or replacement of SUP60N06-12P-E3?

All SUP60N06-12P-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP60N06-12P-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP60N06-12P-E3 part is unused and in its original packaging.

Return procedure for SUP60N06-12P-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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