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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP60N10-16L-E3

Name: SUP60N10-16L-E3
Brand: Vishay Siliconix
SKU: SUP60N10-16L-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP60N10-16L-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP60N10-16L-E3.pdf

Description:: MOSFET N-CH 100V 60A TO220AB

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Product details

Overview

SUP60N10-16L-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 100 V drain-source voltage, 60 A continuous drain current at TC = 25 °C, and 0.016 Ω rDS(on) at VGS = 10 V. It operates up to 175 °C junction temperature and is optimized for PWM switching in high-efficiency DC/DC primary-side applications.

For engineers reviewing the SUP60N10-16L-E3 datasheet, SUP60N10-16L-E3 pinout, SUP60N10-16L-E3 application, or SUP60N10-16L-E3 equivalent, key selection criteria include its 1.0 °C/W junction-to-case thermal resistance, 73–110 nC total gate charge, avalanche energy rating of 80 mJ, and TO-220AB package with drain-connected tab for direct heatsinking.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching performance. Its gate threshold voltage (1–3 V) enables robust drive compatibility with standard 5 V and 10 V logic-level controllers, while the 3820 pF input capacitance and 210 pF reverse transfer capacitance support stable high-frequency PWM operation up to several hundred kHz.

The device integrates a source-drain body diode with 1.0–1.5 V forward voltage at 60 A and 62–100 ns reverse recovery time, enabling synchronous rectification-capable topologies. Its safe operating area (SOA) is defined up to 100 A pulsed drain current and supports single-pulse avalanche energy handling without derating below 125 °C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for primary-side switch in 48 V–96 V bus DC/DC converters
r_DS(on)	0.016 Ω @ V_GS = 10 V, I_D = 30 A - Enables <1 W conduction loss at 60 A full-load operation with proper heatsinking
I_D (continuous)	60 A @ T_C = 25 °C - Supports high-current primary-side switching in industrial SMPS designs
Q_g	73–110 nC - Determines gate driver power requirement and switching transition time in hard-switched topologies
R_thJC	1.0 °C/W - Allows direct mounting to heatsink for efficient thermal management without thermal interface material penalty
T_J max	175 °C - Enables reliable operation in sealed enclosures or high-ambient environments without forced air cooling
E_AR	80 mJ - Specifies single-pulse avalanche ruggedness for inductive load switching without snubber circuits

Pinout & Package

Package: TO-220AB, through-hole, drain-connected metal tab (electrically active), 3-terminal configuration.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal accepting 0–10 V logic-level drive; requires ≥10 V for full enhancement and minimal r_DS(on)
D	Drain	Main high-side power terminal; internally connected to metal tab for low-inductance, high-current path and thermal conduction
S	Source	Reference node for gate drive and current sensing; common return for load current and body diode conduction

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 20% lower r_DS(on) vs. planar MOSFETs at same die size, reducing conduction losses in space-constrained designs
PWM-optimized switching	Low Q_gd/Q_g ratio (20/73–110 nC) minimizes Miller-induced shoot-through risk in half-bridge configurations
175 °C rated junction	Enables extended lifetime in thermally aggressive environments such as motor drives and solar inverters without derating
Drain-connected tab	Provides dual-function mechanical mounting and thermal path-eliminates need for insulating pads in many heatsink-mounting cases
80 mJ avalanche energy	Permits unclamped inductive switching in flyback and forward converters without external protection components

Applications

Industrial DC/DC Converters	Server Power Supplies
Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter delivering 300–600 W. IC Role / Device Role / Timing Role: High-side power switch controlling transformer primary current during PWM on-time. Use Value: Low 0.016 Ω r_DS(on) reduces conduction loss by >30% vs. comparable 20 mΩ MOSFETs, improving full-load efficiency to >94%.	Use Scenario: Main switch in redundant 12 V intermediate bus converter (IBC) for multi-rail server VRMs. IC Role / Device Role / Timing Role: Hard-switched primary transistor operating at 250–500 kHz with synchronous rectification on secondary side. Use Value: 1.0 °C/W R_thJC allows direct heatsink mounting, simplifying thermal design and supporting 60 A peak current bursts during CPU load transients.
Telecom Rectifiers	Motor Drive Inverters
Use Scenario: Primary switch in -48 V telecom rectifier module converting AC to regulated -48 V DC output. IC Role / Device Role / Timing Role: High-reliability main switch handling continuous 50 A load with 100% duty cycle capability under fault conditions. Use Value: 175 °C T_J rating ensures uninterrupted operation in sealed cabinets where ambient exceeds 85 °C.	Use Scenario: Upper-leg switch in three-phase inverter stage driving 3 kW BLDC motor in HVAC compressors. IC Role / Device Role / Timing Role: Fast-turning-on power switch synchronized with complementary low-side devices using dead-time control. Use Value: 62–100 ns t_rr and low Q_rr (0.10–0.25 µC) minimize body diode commutation loss during freewheeling intervals.

Industrial DC/DC Converters

Server Power Supplies

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter delivering 300–600 W.

IC Role / Device Role / Timing Role: High-side power switch controlling transformer primary current during PWM on-time.

Use Value: Low 0.016 Ω r_DS(on) reduces conduction loss by >30% vs. comparable 20 mΩ MOSFETs, improving full-load efficiency to >94%.

Use Scenario: Main switch in redundant 12 V intermediate bus converter (IBC) for multi-rail server VRMs.

IC Role / Device Role / Timing Role: Hard-switched primary transistor operating at 250–500 kHz with synchronous rectification on secondary side.

Use Value: 1.0 °C/W R_thJC allows direct heatsink mounting, simplifying thermal design and supporting 60 A peak current bursts during CPU load transients.

Telecom Rectifiers

Motor Drive Inverters

Use Scenario: Primary switch in -48 V telecom rectifier module converting AC to regulated -48 V DC output.

IC Role / Device Role / Timing Role: High-reliability main switch handling continuous 50 A load with 100% duty cycle capability under fault conditions.

Use Value: 175 °C T_J rating ensures uninterrupted operation in sealed cabinets where ambient exceeds 85 °C.

Use Scenario: Upper-leg switch in three-phase inverter stage driving 3 kW BLDC motor in HVAC compressors.

IC Role / Device Role / Timing Role: Fast-turning-on power switch synchronized with complementary low-side devices using dead-time control.

Use Value: 62–100 ns t_rr and low Q_rr (0.10–0.25 µC) minimize body diode commutation loss during freewheeling intervals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF10	Higher r_DS(on) (0.018 Ω), lower Q_g (65 nC), same TO-220AB package	Lower gate drive power but higher conduction loss at >40 A; less suitable for high-current continuous operation	Select when gate drive capability is limited and peak current remains below 50 A
IRF540NPBF	Lower voltage rating (100 V), higher r_DS(on) (0.044 Ω), 175 °C rated, TO-220AB	Significantly higher conduction loss; acceptable only in low-duty-cycle or low-current auxiliary switching roles	Use only as cost-sensitive fallback where efficiency and thermal margin are secondary to BOM cost

Compared with STP60NF10 and IRF540NPBF, SUP60N10-16L-E3 delivers superior thermal performance (1.0 °C/W vs. 1.5–1.8 °C/W) and lower conduction loss at rated current-critical for high-power density, high-reliability industrial power stages.

Availability

SUP60N10-16L-E3 is available at Aetrix Electronics and suitable for industrial DC/DC converters, server power supplies, and telecom rectifiers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from qualified manufacturing sites.

Supply support for SUP60N10-16L-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for demanding industrial and computing applications.

The SUP60N10-16L-E3 belongs to Vishay's TrenchFET® Gen III high-current power MOSFET family, engineered specifically for high-efficiency, high-temperature primary-side switching in enterprise and infrastructure power systems.

FAQ

What is the maximum continuous drain current rating for SUP60N10-16L-E3 at 125 °C case temperature?

The SUP60N10-16L-E3 supports 35 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied in thermal design calculations when ambient or heatsink conditions exceed 25 °C. The device maintains full 60 A capability only when mounted on a heatsink maintaining TC ≤ 25 °C.

Does SUP60N10-16L-E3 have avalanche capability, and how is it rated?

Yes, SUP60N10-16L-E3 is rated for repetitive avalanche operation with 80 mJ single-pulse energy at TJ = 25 °C (L = 0.1 mH). This rating is validated per JEDEC standards and enables reliable unclamped inductive switching in flyback, forward, and resonant converters without external snubbers-provided pulse width remains ≤ 300 µs and duty cycle ≤ 2 %.

Is SUP60N10-16L-E3 compatible with 5 V gate drive, and what is its on-resistance under that condition?

SUP60N10-16L-E3 is not fully enhanced at 5 V gate drive. Its datasheet specifies rDS(on) = 0.018 Ω only at VGS = 4.5 V and ID = 20 A-not at 5 V. For guaranteed 0.016 Ω performance, 10 V gate drive is required. At 4.5 V, conduction loss increases ~12.5% versus 10 V, making 5 V drive marginal for high-current applications.

What is the thermal resistance from junction to ambient for SUP60N10-16L-E3 in free air?

The junction-to-ambient thermal resistance (RthJA) for SUP60N10-16L-E3 is 62.5 °C/W under free-air conditions, as measured on a 1" square FR-4 PCB. This value assumes no heatsink and highlights the necessity of external thermal management-such as mounting to a heatsink via the drain-connected tab-to achieve usable power dissipation in real-world applications.

How does the body diode performance of SUP60N10-16L-E3 compare to standard rectifiers in synchronous designs?

The integrated body diode of SUP60N10-16L-E3 has a forward voltage of 1.0–1.5 V at 60 A and reverse recovery time of 62–100 ns. While slower and higher-VF than dedicated Schottky diodes, its parameters are optimized for controlled commutation in synchronous rectification-especially when paired with precise dead-time control to avoid cross-conduction, making it viable in cost-sensitive, medium-frequency SMPS.

SUP60N10-16L-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3820 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP60N10-16L-E3 FAQ

1.How can I place an order for SUP60N10-16L-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP60N10-16L-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP60N10-16L-E3 reliable?

The price and inventory of SUP60N10-16L-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP60N10-16L-E3 is usually 5 days.

3.What payment methods are accepted for SUP60N10-16L-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP60N10-16L-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP60N10-16L-E3?

SUP60N10-16L-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP60N10-16L-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP60N10-16L-E3?

For technical support, including SUP60N10-16L-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP60N10-16L-E3 requirements.

6.How does Aetrix verify that SUP60N10-16L-E3 is sourced from the original manufacturer or authorized distributors?

All SUP60N10-16L-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP60N10-16L-E3 meets industry standards.

7.What is the process for return or replacement of SUP60N10-16L-E3?

All SUP60N10-16L-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP60N10-16L-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP60N10-16L-E3 part is unused and in its original packaging.

Return procedure for SUP60N10-16L-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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