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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP70030E-GE3

Name: SUP70030E-GE3
Brand: Vishay Siliconix
SKU: SUP70030E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP70030E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP70030E-GE3.pdf

Description:: MOSFET N-CH 100V 150A TO220AB

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Product details

Overview

SUP70030E-GE3 from Vishay Siliconix is an N-channel 100 V, 150 A (T_C = 25 °C) TrenchFET® power MOSFET in TO-220AB package, featuring R_DS(on) = 2.65 mΩ at V_GS = 10 V and 3.20 mΩ at V_GS = 7.5 V, Q_g = 142.4 nC, and 175 °C maximum junction temperature - optimized for high-current synchronous rectification in server PSUs and industrial DC/DC converters.

For engineers reviewing the SUP70030E-GE3 datasheet, SUP70030E-GE3 pinout, SUP70030E-GE3 application, or SUP70030E-GE3 equivalent, key selection criteria include its low gate charge for fast switching in hard-switched topologies, robust avalanche rating (E_AS = 180 mJ), and validated R_g (0.34–3.4 Ω) for controlled turn-on/turn-off in motor drive H-bridges.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining stable threshold voltage (V_GS(th) = 2–4 V) across -55 to +175 °C. Its dynamic parameters - C_iss = 10,870 pF, C_oss = 820 pF, and C_rss = 40 pF - support efficient operation in resonant and phase-shifted full-bridge converters up to 200 kHz.

The device integrates a fast body diode with t_rr = 76–150 ns and Q_rr = 0.205–0.24 μC, enabling reliable OR-ing and e-fuse functions without external Schottky clamping. Thermal design is anchored by R_thJC = 0.4 °C/W and R_thJA = 40 °C/W (PCB mount), supporting continuous 150 A conduction when heatsinked.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V and 54 V bus systems with 10 % margin for transient overvoltage
R_DS(on) max @ 10 V	3.18 mΩ - enables <1.5 W conduction loss at 150 A, critical for high-efficiency secondary-side rectification
Q_g typ	142.4 nC - determines gate driver power requirement and switching transition time in hard-switched SMPS
I_D continuous @ T_C = 25 °C	150 A - defines maximum steady-state current capability with adequate heatsinking
E_AS	180 mJ - quantifies single-pulse avalanche energy handling for inductive load switching reliability
T_J max	+175 °C - allows operation in high-ambient environments such as enclosed power tools and motor drives
R_thJC	0.4 °C/W - enables direct thermal path to heatsink, reducing junction-to-case temperature rise under full load

Pinout & Package

Package: TO-220AB - through-hole, single-ended, isolated drain tab, compatible with standard PCB mounting and mechanical heatsinking via M3 screw through heatsink hole.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output terminal	Internally connected to metal tab - must be electrically isolated from heatsink unless system ground reference permits
Source (S)	Reference node for gate drive and current return	Low-inductance connection point for Kelvin sensing or current monitoring shunt placement
Gate (G)	Control input for channel conduction	High-impedance node requiring low-ESR gate resistor (R_g = 1 Ω typical) to damp ringing and control dV/dt

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 30 % lower R_DS(on) vs. planar MOSFETs at same die size, improving power density in space-constrained PSU designs
100 % R_g tested	Ensures consistent gate resistance (0.34–3.4 Ω), minimizing variation in switching speed and EMI profile across production lots
Very low Q_gd	18.5 nC - reduces Miller plateau duration and associated switching losses during hard commutation
100 % UIS tested	Validates ruggedness against unclamped inductive switching events common in motor drive and solenoid control
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C, supporting green manufacturing requirements

Applications

Server Power Supply Secondary Rectification	Industrial DC/DC Converter Switch
Use Scenario: High-current 12 V output stage in 3 kW telecom rectifier, operating at 200 kHz with synchronous rectification. IC Role / Device Role / Timing Role: Primary power switch in low-side synchronous rectifier configuration, replacing Schottky diodes to reduce conduction loss. Use Value: Achieves >98.5 % efficiency at full load due to 2.65 mΩ R_DS(on), cutting heat sink size by 40 % versus legacy 5 mΩ devices.	Use Scenario: Input-side high-side switch in isolated 48 V → 12 V industrial DC/DC module with active clamp forward topology. IC Role / Device Role / Timing Role: Main switching element handling 150 A peak current, driven by isolated gate driver with 10 V logic level. Use Value: Withstands repetitive 100 V bus transients and delivers 180 mJ avalanche energy per pulse, eliminating need for external snubbers.
Power Tool Motor Drive H-Bridge	Battery Management System e-Fuse
Use Scenario: Half-bridge leg in cordless drill BLDC inverter, switching at 25 kHz with PWM duty cycle up to 95 %. IC Role / Device Role / Timing Role: Low-side switch in H-bridge, leveraging fast body diode (t_rr = 76 ns) for freewheeling current recirculation. Use Value: Enables 175 °C junction operation without derating, sustaining 150 A burst current during stall conditions without thermal shutdown.	Use Scenario: Bidirectional current-limiting switch in 48 V Li-ion battery pack protection circuit, responding to overcurrent within 500 ns. IC Role / Device Role / Timing Role: e-Fuse element controlling main battery discharge path, activated by external current-sense comparator and logic controller. Use Value: Low R_DS(on) minimizes voltage drop (<50 mV at 15 A), preserving state-of-charge accuracy and enabling precise 100 A fault current limiting.

Server Power Supply Secondary Rectification

Industrial DC/DC Converter Switch

Use Scenario: High-current 12 V output stage in 3 kW telecom rectifier, operating at 200 kHz with synchronous rectification.

IC Role / Device Role / Timing Role: Primary power switch in low-side synchronous rectifier configuration, replacing Schottky diodes to reduce conduction loss.

Use Value: Achieves >98.5 % efficiency at full load due to 2.65 mΩ R_DS(on), cutting heat sink size by 40 % versus legacy 5 mΩ devices.

Use Scenario: Input-side high-side switch in isolated 48 V → 12 V industrial DC/DC module with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switching element handling 150 A peak current, driven by isolated gate driver with 10 V logic level.

Use Value: Withstands repetitive 100 V bus transients and delivers 180 mJ avalanche energy per pulse, eliminating need for external snubbers.

Power Tool Motor Drive H-Bridge

Battery Management System e-Fuse

Use Scenario: Half-bridge leg in cordless drill BLDC inverter, switching at 25 kHz with PWM duty cycle up to 95 %.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge, leveraging fast body diode (t_rr = 76 ns) for freewheeling current recirculation.

Use Value: Enables 175 °C junction operation without derating, sustaining 150 A burst current during stall conditions without thermal shutdown.

Use Scenario: Bidirectional current-limiting switch in 48 V Li-ion battery pack protection circuit, responding to overcurrent within 500 ns.

IC Role / Device Role / Timing Role: e-Fuse element controlling main battery discharge path, activated by external current-sense comparator and logic controller.

Use Value: Low R_DS(on) minimizes voltage drop (<50 mV at 15 A), preserving state-of-charge accuracy and enabling precise 100 A fault current limiting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP4468PBF	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 160 nC; TO-247AC package; no 100 % R_g test	Larger footprint, higher gate drive power required, less suitable for compact TO-220 layouts	Choose when higher avalanche rating (E_AS = 320 mJ) is prioritized over board space and gate drive efficiency
STP150N10F7	R_DS(on) = 3.0 mΩ @ 10 V; Q_g = 125 nC; TO-220FP package; lower I_D rating (120 A)	Shorter lead form factor limits heatsink contact area; reduced continuous current capability	Prefer for space-constrained consumer-grade inverters where 120 A peak suffices and lower Q_g improves light-load efficiency

Compared with IRFP4468PBF and STP150N10F7, SUP70030E-GE3 offers the optimal balance of TO-220AB thermal performance (R_thJC = 0.4 °C/W), validated gate resistance control, and 150 A continuous rating - making it the preferred choice for industrial-grade 48–100 V systems demanding long-term reliability under sustained high current.

Availability

SUP70030E-GE3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and battery management systems requiring stable component supply and long-lifecycle support.

Supply support for SUP70030E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SUP70030E-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-reliability applications in computing, industrial automation, and energy infrastructure where low R_DS(on) and robust avalanche capability are mandatory.

FAQ

What is the maximum continuous drain current rating for SUP70030E-GE3 at 70 °C case temperature?

The SUP70030E-GE3 supports 150 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper heatsinking and adherence to SOA limits - notably, the device remains package-limited rather than thermally limited at this condition, confirming its robust construction for high-power industrial use cases.

Does SUP70030E-GE3 have a fully characterized body diode for synchronous rectification?

Yes, SUP70030E-GE3 includes a fully characterized intrinsic body diode with V_SD = 0.8–1.5 V at I_F = 10 A and reverse recovery time t_rr = 76–150 ns. These parameters are measured under standardized conditions (I_F = 34 A, di/dt = 100 A/μs) and enable reliable zero-voltage switching in LLC and phase-shifted topologies without external diode supplementation.

Is SUP70030E-GE3 suitable for avalanche-prone motor drive applications?

Yes, SUP70030E-GE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy E_AS = 180 mJ at L = 0.1 mH. This makes it suitable for brushed DC and BLDC motor drive circuits where inductive kickback exceeds V_DS rating, provided pulse width and duty cycle remain within SOA-defined limits.

What is the gate threshold voltage range for SUP70030E-GE3, and how does it affect drive compatibility?

The gate threshold voltage V_GS(th) for SUP70030E-GE3 is 2–4 V at I_D = 250 μA. This range ensures compatibility with standard 5 V and 3.3 V logic-level gate drivers while maintaining sufficient noise margin to prevent spurious turn-on. The device requires ≥7.5 V for full enhancement (R_DS(on) ≤ 3.84 mΩ), confirming suitability for 10 V gate drive systems.

How does the thermal resistance of SUP70030E-GE3 impact heatsink selection?

SUP70030E-GE3 has R_thJC = 0.4 °C/W and R_thJA = 40 °C/W (PCB mount). For a 150 A load at 2.65 mΩ, power dissipation reaches ~60 W - requiring a heatsink with R_thSA ≤ 0.6 °C/W to maintain T_J ≤ 125 °C at 25 °C ambient. The low R_thJC confirms that thermal performance is dominated by heatsink interface quality, not package limitation.

SUP70030E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.18mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 214 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10870 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP70030E-GE3 FAQ

1.How can I place an order for SUP70030E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP70030E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP70030E-GE3 reliable?

The price and inventory of SUP70030E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP70030E-GE3 is usually 5 days.

3.What payment methods are accepted for SUP70030E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP70030E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP70030E-GE3?

SUP70030E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP70030E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP70030E-GE3?

For technical support, including SUP70030E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP70030E-GE3 requirements.

6.How does Aetrix verify that SUP70030E-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP70030E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP70030E-GE3 meets industry standards.

7.What is the process for return or replacement of SUP70030E-GE3?

All SUP70030E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP70030E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP70030E-GE3 part is unused and in its original packaging.

Return procedure for SUP70030E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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