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Vishay Siliconix SUP70040E-GE3
- Part No.:
- SUP70040E-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SUP70040E-GE3.pdf
- Description:
- MOSFET N-CH 100V 120A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:310
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Product details
Overview
SUP70040E-GE3 from Vishay Siliconix is an N-channel 100 V (D-S) power MOSFET optimized for high-current switching in secondary synchronous rectification, DC/DC converters, and motor drive applications. It delivers RDS(on) = 4.0 mΩ at VGS = 10 V, supports 120 A continuous drain current at TC = 25 °C, and operates up to +175 °C junction temperature in TO-220AB package.
For engineers reviewing the SUP70040E-GE3 datasheet, SUP70040E-GE3 pinout, SUP70040E-GE3 application, or SUP70040E-GE3 equivalent, key selection criteria include its low on-resistance at 7.5 V gate drive, 76 nC total gate charge, robust UIS rating (266 mJ), and thermal resistance of 0.4 °C/W (junction-to-case), critical for high-efficiency power stage design.
Technical Context
This ThunderFET® MOSFET uses planar silicon technology with 100 % Rg and UIS testing for production reliability. Its gate threshold voltage (2.5–4.0 V) enables compatibility with standard 5 V and 10 V logic-level drivers, while the body diode exhibits VSD = 0.8–1.5 V at IF = 10 A and VGS = 0 V.
The device features Ciss = 5100 pF, Coss = 2025 pF, and Crss = 165 pF at VDS = 50 V, supporting fast switching with td(on) = 15–30 ns and tf = 15–30 ns under specified test conditions. Its SOA is limited by RDS(on) at short pulses and by package thermal capacity at DC operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum drain-source blocking voltage; defines use in ≤100 V bus systems such as 48 V telecom or industrial DC supplies. |
| RDS(on) max | 4.0 mΩ at VGS = 10 V - Enables <1 W conduction loss at 50 A, critical for high-efficiency synchronous rectifiers. |
| ID continuous | 120 A at TC = 25 °C - Requires heatsink mounting; derates to 125 W at TC = 125 °C per PD rating. |
| Qg typ | 76 nC - Determines gate driver power requirement; compatible with medium-power drivers like IR2110 or UCC27531. |
| RthJC | 0.4 °C/W - Enables direct heatsink attachment; allows ~300 W dissipation before reaching 175 °C junction limit with 75 °C case temp. |
| EAS | 266 mJ - Specifies single-pulse avalanche energy handling; supports inductive load switching without external snubbers. |
| VGS(th) | 2.5–4.0 V - Ensures turn-on with 5 V microcontroller outputs; avoids partial enhancement in noise-prone environments. |
Pinout & Package
Supplied in TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole configuration for high-power PCB mounting and heatsink integration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heat transfer surface | Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits. |
| Source | Reference node for gate control and current return | Low-impedance return path; layout must minimize inductance to reduce switching oscillation and VGS ringing. |
| Gate | Control terminal for channel modulation | High-impedance input requiring <1 μA bias; sensitive to ESD; requires gate resistor (1–10 Ω) to dampen ringing. |
Key Features
| Feature | Design Value |
|---|---|
| ThunderFET® construction | Optimized cell layout and process for reduced RDS(on) × Qg figure-of-merit, improving efficiency in hard-switched topologies. |
| 175 °C maximum junction temperature | Enables operation in high-ambient environments (e.g., enclosed motor drives or battery packs) without derating beyond thermal limits. |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency (0.6–6.6 Ω) and single-pulse avalanche robustness across all units, reducing field failure risk. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E; suitable for consumer, industrial, and automotive supply chains. |
| TO-220AB mechanical outline | Standardized footprint (15.49 mm × 10.51 mm × 4.65 mm) ensures drop-in replacement in existing heatsink-mount designs. |
Applications
| Secondary Synchronous Rectification | DC/DC Converter Primary Switch |
|---|---|
Use Scenario: High-current output stage in isolated LLC or phase-shifted full-bridge SMPS for server PSUs or telecom rectifiers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction losses at 12–48 V output rails. Use Value: Achieves >1 % efficiency gain over 40 V Schottky diodes at 60 A due to 4.0 mΩ RDS(on), lowering thermal load on secondary PCB area. |
Use Scenario: Primary-side switch in 300–500 W offline flyback or forward converters for industrial HMIs and PLC power modules. IC Role / Device Role / Timing Role: Main power switch handling 100 V bus with fast turn-off to minimize overlap losses during ZVS transitions. Use Value: 76 nC Qg and 15–30 ns tf support 200–300 kHz switching while maintaining <1.5 W gate drive loss with 10 Ω resistor. |
| Power Tool Motor Drive | Battery Management System Switch |
Use Scenario: H-bridge half-bridge leg in cordless drill/driver BLDC controllers operating from 18–60 V Li-ion packs. IC Role / Device Role / Timing Role: High-current quadrant switch enabling bidirectional motor current flow with integrated body diode commutation. Use Value: 120 A ID rating and 266 mJ EAS withstand motor back-EMF spikes during abrupt braking without external clamping. |
Use Scenario: Main discharge/charge FET in 48 V lithium iron phosphate (LiFePO4) battery packs for energy storage systems. IC Role / Device Role / Timing Role: High-side or low-side protection switch controlling pack connection to inverter or charger based on BMS fault signals. Use Value: 0.0046 Ω RDS(on) at 7.5 V gate drive ensures <0.5 V drop at 100 A, minimizing voltage sag during peak load transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | RDS(on) = 4.7 mΩ @ 10 V; Qg = 131 nC; RthJC = 0.55 °C/W; same TO-220AB package. | Higher gate charge increases driver loss; higher RthJC reduces thermal headroom at high ambient. | Acceptable where gate drive capability exceeds 100 mA and heatsinking margin is ≥20 % greater than required for SUP70040E-GE3. |
| STP120N10F7 | RDS(on) = 3.8 mΩ @ 10 V; Qg = 82 nC; RthJC = 0.45 °C/W; TO-220FP package (insulated tab). | Lower RDS(on) but higher Qg; insulated tab eliminates need for isolation kit but reduces thermal conductivity. | Preferred when electrical isolation from heatsink is mandatory; avoid if thermal budget is constrained below 100 W dissipation. |
Compared with IRF1404PBF and STP120N10F7, SUP70040E-GE3 offers the best balance of low RDS(on), moderate Qg, and lowest RthJC, making it optimal for thermally dense 100 V switch-mode applications where both conduction and switching losses must be minimized simultaneously.
Availability
SUP70040E-GE3 is available at Aetrix Electronics and suitable for power supply secondary rectification, motor drive switching, and battery management systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for SUP70040E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.
The SUP70040E-GE3 belongs to Vishay's ThunderFET® family, engineered specifically for high-current, high-frequency switching in industrial power conversion, motor control, and renewable energy systems.
FAQ
What is the maximum continuous drain current rating for SUP70040E-GE3 at 70 °C case temperature?
The SUP70040E-GE3 supports 120 A continuous drain current at TC = 70 °C, matching its rating at 25 °C due to thermal design margin built into the TO-220AB package and internal silicon layout. This value is confirmed in the Absolute Maximum Ratings table and remains valid up to TC = 125 °C before derating begins.
Does SUP70040E-GE3 require a gate driver with negative turn-off capability?
No, SUP70040E-GE3 does not require negative turn-off voltage. Its gate threshold voltage range (2.5–4.0 V) and low gate leakage (<±250 nA) allow reliable turn-off using 0 V gate drive. Standard non-inverting drivers like TC4420 or MIC4423 are fully compatible without negative rail support.
Can SUP70040E-GE3 be used in avalanche mode for inductive load switching?
Yes, SUP70040E-GE3 is 100 % UIS tested with EAS = 266 mJ at L = 0.1 mH, confirming controlled avalanche capability. It may be used in unclamped inductive switching applications such as relay drivers or solenoid controls, provided pulse width and duty cycle remain within SOA limits.
What is the typical reverse transfer capacitance (Crss) of SUP70040E-GE3 and why does it matter?
The typical Crss of SUP70040E-GE3 is 165 pF at VDS = 50 V. This parameter directly impacts Miller effect during switching - lower Crss reduces gate voltage coupling during dV/dt events, minimizing false turn-on risk and enabling faster, more stable hard-switching operation.
Is the drain tab of SUP70040E-GE3 electrically isolated from the package mount surface?
No, the drain tab of SUP70040E-GE3 is electrically connected to the drain terminal and is not isolated. When mounted to a heatsink, an insulating pad or mica washer must be used unless the heatsink is referenced to the drain potential in the circuit. This is inherent to the TO-220AB package construction.
SUP70040E-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 120 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5100 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SUP70040E-GE3 FAQ
1.How can I place an order for SUP70040E-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUP70040E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUP70040E-GE3 reliable?
The price and inventory of SUP70040E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP70040E-GE3 is usually 5 days.
3.What payment methods are accepted for SUP70040E-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP70040E-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUP70040E-GE3?
SUP70040E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUP70040E-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUP70040E-GE3?
For technical support, including SUP70040E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP70040E-GE3 requirements.
6.How does Aetrix verify that SUP70040E-GE3 is sourced from the original manufacturer or authorized distributors?
All SUP70040E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP70040E-GE3 meets industry standards.
7.What is the process for return or replacement of SUP70040E-GE3?
All SUP70040E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP70040E-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUP70040E-GE3 part is unused and in its original packaging.
Return procedure for SUP70040E-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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