Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP70042E-GE3

Name: SUP70042E-GE3
Brand: Vishay Siliconix
SKU: SUP70042E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SUP70042E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP70042E-GE3.pdf

Description:: N-CHANNEL 100 V (D-S) MOSFET TO-

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:575

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SUP70042E-GE3 from Vishay Siliconix is an N-channel 100 V, 150 A (T_C = 25 °C) TrenchFET® power MOSFET in TO-220AB package, with R_DS(on) = 4.0 mΩ at V_GS = 10 V and Q_g = 84 nC, designed for high-efficiency switching in DC/DC converters and motor drive switches.

For engineers reviewing the SUP70042E-GE3 datasheet, SUP70042E-GE3 pinout, SUP70042E-GE3 application, or SUP70042E-GE3 equivalent, key selection criteria include its 175 °C maximum junction temperature, 100 % UIS tested ruggedness, low Q_gd for reduced switching loss, and TO-220AB thermal performance with R_thJC = 0.55 °C/W.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with minimized gate charge. Its dynamic parameters-C_iss = 6490 pF, C_oss = 570 pF, and C_rss = 20 pF-are optimized for hard-switched topologies requiring stable voltage gain and low Miller feedback.

The device supports continuous operation up to 175 °C junction temperature and features a robust body diode with t_rr = 58 ns (typ.) and Q_rr = 126 μC (typ.), enabling reliable synchronous rectification and OR-ing applications without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage; suitable for 48 V and 60 V bus systems with margin.
R_DS(on) max @ V_GS = 10 V	4.0 mΩ - Enables <1.2 W conduction loss at 150 A, critical for high-current power tools and inverters.
Q_g typ.	84 nC - Determines gate driver power requirement; compatible with standard 1–2 A peak drivers.
I_D continuous @ T_C = 25 °C	150 A - Requires heatsink mounting; enables single-device use in 1–3 kW industrial DC/DC stages.
R_thJC	0.55 °C/W - Confirms efficient heat transfer to heatsink; supports >200 W dissipation with modest thermal interface.
E_AS single pulse	125 mJ - Validates avalanche ruggedness for unclamped inductive switching in motor drives.
V_GS(th)	2–4 V - Ensures clean turn-on with standard 5 V or 3.3 V logic-level gate drivers when used with appropriate buffering.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting, and heatsink-compatible flange. Dimensions per Vishay Doc. 71195: D = 15.17 mm max, E = 10.28 mm max, L = 13.69 mm max, ØP = 3.74 mm.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Left, when viewed from front with label side up)	Source (S)	Low-side return path; connects to PCB ground plane or source rail; electrically tied to tab via internal isolation in TO-220AB variant.
Pin 2 (Center)	Gate (G)	Control input; requires ≤±20 V rating; sensitive to ESD; layout must minimize inductance to suppress ringing during fast switching.
Pin 3 (Right)	Drain (D)	High-voltage power node; internally bonded to metal tab; must be thermally and electrically connected to heatsink with insulating pad if isolation required.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 4.0 mΩ R_DS(on) at 100 V rating-best-in-class conduction efficiency for TO-220AB footprint.
100 % UIS tested	Guarantees single-pulse avalanche capability up to 125 mJ, eliminating need for external snubbers in inductive load switching.
Very low Q_gd (9.5 nC typ.)	Reduces Miller plateau time and switching loss during hard commutation, improving efficiency in 100–500 kHz SMPS designs.
175 °C maximum T_J	Enables operation in sealed enclosures or high-ambient environments (e.g., power tools, EV chargers) without derating.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per Doc. 99912.

Applications

Switching Power Supply	DC/DC Converter
Use Scenario: Primary-side switch in 600–1000 W offline flyback or LLC resonant converters. IC Role / Device Role / Timing Role: High-voltage, high-current main switching element handling full input power with minimal conduction loss. Use Value: 4.0 mΩ R_DS(on) and 84 nC Q_g enable >95 % efficiency at 100 kHz while maintaining thermal headroom on standard heatsinks.	Use Scenario: High-current synchronous rectifier or primary switch in 48 V–12 V bidirectional buck-boost converters for server PSUs. IC Role / Device Role / Timing Role: Low-side or high-side power switch managing up to 150 A continuous current with fast turn-off control. Use Value: 175 °C T_J rating and 0.55 °C/W R_thJC allow sustained 120 A operation without forced air cooling.
Motor Drive Switch	Battery Management System (BMS)
Use Scenario: Half-bridge high-side switch in cordless power tool battery packs (e.g., 40 V–60 V nominal). IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged power transistor controlling brushed or BLDC motor phase current. Use Value: 125 mJ E_AS withstands inductive kickback during PWM commutation; low Q_gd ensures crisp edge control under high di/dt.	Use Scenario: Solid-state e-fuse and OR-ing switch in multi-cell Li-ion battery stacks for UPS and portable medical devices. IC Role / Device Role / Timing Role: Bidirectional current-blocking and fault-isolation switch with integrated body diode reverse recovery control. Use Value: 58 ns t_rr and 126 μC Q_rr minimize shoot-through risk and reverse recovery loss during hot-swap transitions.

Switching Power Supply

DC/DC Converter

Use Scenario: Primary-side switch in 600–1000 W offline flyback or LLC resonant converters.

IC Role / Device Role / Timing Role: High-voltage, high-current main switching element handling full input power with minimal conduction loss.

Use Value: 4.0 mΩ R_DS(on) and 84 nC Q_g enable >95 % efficiency at 100 kHz while maintaining thermal headroom on standard heatsinks.

Use Scenario: High-current synchronous rectifier or primary switch in 48 V–12 V bidirectional buck-boost converters for server PSUs.

IC Role / Device Role / Timing Role: Low-side or high-side power switch managing up to 150 A continuous current with fast turn-off control.

Use Value: 175 °C T_J rating and 0.55 °C/W R_thJC allow sustained 120 A operation without forced air cooling.

Motor Drive Switch

Battery Management System (BMS)

Use Scenario: Half-bridge high-side switch in cordless power tool battery packs (e.g., 40 V–60 V nominal).

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged power transistor controlling brushed or BLDC motor phase current.

Use Value: 125 mJ E_AS withstands inductive kickback during PWM commutation; low Q_gd ensures crisp edge control under high di/dt.

Use Scenario: Solid-state e-fuse and OR-ing switch in multi-cell Li-ion battery stacks for UPS and portable medical devices.

IC Role / Device Role / Timing Role: Bidirectional current-blocking and fault-isolation switch with integrated body diode reverse recovery control.

Use Value: 58 ns t_rr and 126 μC Q_rr minimize shoot-through risk and reverse recovery loss during hot-swap transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP4110PBF	R_DS(on) = 4.5 mΩ @ 10 V; Q_g = 105 nC; R_thJC = 0.50 °C/W; same TO-220AB package.	Higher gate charge increases driver loss; slightly higher R_DS(on) raises conduction loss by ~12.5 % at 150 A.	Acceptable where thermal margin exists and driver capability exceeds 2 A peak; not recommended for 500 kHz+ switching.
STP150N10F7	R_DS(on) = 3.8 mΩ @ 10 V; Q_g = 92 nC; R_thJC = 0.65 °C/W; TO-220FP (full-pack) variant only.	Lower R_DS(on) improves conduction efficiency but higher R_thJC degrades thermal performance; no isolated tab option.	Preferred for space-constrained layouts needing lower on-resistance, but requires careful thermal design due to inferior junction-to-case resistance.

Compared with IRFP4110PBF and STP150N10F7, SUP70042E-GE3 offers the optimal balance of ultra-low R_DS(on), moderate Q_g, and industry-leading R_thJC, making it the most thermally efficient choice for high-current, high-reliability industrial switching applications.

Availability

SUP70042E-GE3 is available at Aetrix Electronics and suitable for switching power supply, motor drive switch, and battery management system applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SUP70042E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The SUP70042E-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered for high-current, high-temperature industrial and automotive-qualified power conversion systems.

FAQ

What is the maximum continuous drain current rating for SUP70042E-GE3 at 70 °C case temperature?

The SUP70042E-GE3 supports 139 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating from 150 A at 25 °C reflects thermal constraints of the TO-220AB package and must be validated against actual heatsink performance and ambient conditions in the final design.

Does SUP70042E-GE3 have a fully rated avalanche capability, and what is the test condition?

Yes, SUP70042E-GE3 is 100 % UIS (unclamped inductive switching) tested per JEDEC JESD24-1. The single-pulse avalanche energy rating is 125 mJ at L = 0.1 mH, confirming robustness against inductive transients in motor drive and power tool applications without external protection.

What is the typical reverse recovery time (t_rr) of the body diode in SUP70042E-GE3, and under what conditions is it measured?

The typical reverse recovery time (t_rr) of the intrinsic body diode in SUP70042E-GE3 is 58 ns, measured at I_F = 10 A, di/dt = 100 A/μs, and T_J = 25 °C. This value supports efficient operation in synchronous rectification and OR-ing configurations where fast diode recovery minimizes cross-conduction loss.

Is SUP70042E-GE3 suitable for logic-level gate drive, and what is its gate threshold voltage range?

SUP70042E-GE3 has a gate threshold voltage (V_GS(th)) range of 2–4 V at I_D = 250 μA, making it compatible with 3.3 V and 5 V logic-level gate drivers. However, full enhancement to R_DS(on) = 4.0 mΩ requires V_GS ≥ 10 V; thus, a dedicated gate driver or level-shifter is recommended for optimal performance.

What thermal resistance values are specified for SUP70042E-GE3, and how do they impact heatsink selection?

SUP70042E-GE3 specifies R_thJC = 0.55 °C/W (junction-to-case) and R_thJA = 40 °C/W (junction-to-ambient, PCB mount). The low R_thJC confirms excellent thermal coupling to the heatsink, meaning heatsink selection should prioritize low R_thSA (sink-to-ambient); for 278 W P_D, a heatsink with ≤ 0.3 °C/W total thermal resistance is required to maintain T_J ≤ 175 °C.

SUP70042E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6490 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP70042E-GE3 FAQ

1.How can I place an order for SUP70042E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP70042E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP70042E-GE3 reliable?

The price and inventory of SUP70042E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP70042E-GE3 is usually 5 days.

3.What payment methods are accepted for SUP70042E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP70042E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP70042E-GE3?

SUP70042E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP70042E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP70042E-GE3?

For technical support, including SUP70042E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP70042E-GE3 requirements.

6.How does Aetrix verify that SUP70042E-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP70042E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP70042E-GE3 meets industry standards.

7.What is the process for return or replacement of SUP70042E-GE3?

All SUP70042E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP70042E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP70042E-GE3 part is unused and in its original packaging.

Return procedure for SUP70042E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …