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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP70060E-GE3

Name: SUP70060E-GE3
Brand: Vishay Siliconix
SKU: SUP70060E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP70060E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP70060E-GE3.pdf

Description:: MOSFET N-CH 100V 131A TO220AB

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Product details

Overview

SUP70060E-GE3 from Vishay Siliconix is an N-channel 100 V, 131 A (T_C = 25 °C), TO-220AB-packaged power MOSFET with R_DS(on) = 4.8 mΩ at V_GS = 10 V and Q_g = 53.5 nC, designed for high-current switching in industrial DC/DC converters and synchronous rectification stages.

For engineers reviewing the SUP70060E-GE3 datasheet, SUP70060E-GE3 pinout, SUP70060E-GE3 application, or SUP70060E-GE3 equivalent, key selection criteria include its 175 °C maximum junction temperature, 100 % R_g and UIS tested reliability, and low thermal resistance (R_thJC = 0.75 °C/W) enabling high-power-density designs without forced cooling.

Technical Context

This ThunderFET® MOSFET uses planar silicon technology optimized for low conduction loss and fast switching in hard-switched topologies. Its gate charge profile (Q_gd/Q_gs = 13.2/14.5 nC) supports efficient zero-voltage switching (ZVS) transition control in resonant converters.

The device features a robust body diode with t_rr = 88 ns (typ.) and Q_rr = 0.22 μC (typ.), enabling reliable operation in synchronous rectifier configurations where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports input rails up to 85 V DC in offline SMPS and 48 V bus systems with margin for transient spikes.
R_DS(on) max	5.8 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 30 A continuous drain current, reducing heatsink requirements.
I_D cont	131 A at T_C = 25 °C - Delivers high peak power capability in motor drive H-bridge legs and UPS inverters.
Q_g typ	53.5 nC - Allows gate drive with standard 1-A peak drivers at 100 kHz switching without excessive driver loss.
E_AS	125 mJ - Withstands single-pulse avalanche energy events common during inductive load switching or fault conditions.
R_thJC	0.75 °C/W - Permits >150 W dissipation with modest heatsinking (e.g., 20 °C/W sink yields T_J ≈ 135 °C at 100 W).
V_GS(th)	2–4 V - Ensures clean turn-on with standard 5 V or 3.3 V logic-level gate drivers without level-shifting.

Pinout & Package

Package: TO-220AB - Through-hole, single-ended heat-transfer package with isolated drain tab; 15.17 mm × 10.28 mm × 4.45 mm footprint; requires mechanical mounting to heatsink via M3 screw through drain tab hole (ØP = 3.54–3.94 mm).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 0–20 V gate-source voltage; 1.9 Ω typical gate resistance limits ringing and simplifies snubber design.
D (Drain)	High-side power output	Connected to internal die backside; electrically tied to metal tab - must be insulated from chassis unless referenced to system ground.
S (Source)	Power return/reference node	Serves as local ground reference for gate drive; source inductance must be minimized to avoid shoot-through in half-bridge layouts.

Key Features

Feature	Design Value
ThunderFET® construction	Optimized cell layout delivering 15 % lower R_DS(on) vs. prior-gen 100 V MOSFETs at same die size, improving power density.
100 % R_g tested	Guarantees gate resistance ≤3.8 Ω, ensuring predictable rise/fall times and eliminating need for external gate resistors in most applications.
100 % UIS tested	Each unit validated for unclamped inductive switching stress up to I_AS = 50 A and E_AS = 125 mJ - critical for motor drive reliability.
175 °C T_J max	Enables operation in sealed enclosures or high-ambient environments (e.g., telecom rectifiers at 85 °C ambient) without derating.
Lead (Pb)-free & halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709B - suitable for consumer, industrial, and medical end equipment requiring green compliance.

Applications

Uninterruptible Power Supplies (UPS)	AC/DC Switch-Mode Power Supplies
Use Scenario: High-efficiency inverter stage converting 48 V DC battery bank to 120/230 V AC output. IC Role / Device Role / Timing Role: Low-side switch in full-bridge topology handling 100+ A peak currents during overload transients. Use Value: 0.75 °C/W R_thJC enables sustained 1.2 kW output without active cooling; 175 °C T_J rating prevents thermal shutdown during 150 % load for 30 s.	Use Scenario: Primary-side switching element in 1 kW telecom rectifier operating at 100 kHz. IC Role / Device Role / Timing Role: Hard-switched MOSFET in forward converter primary leg, conducting 80 A average current. Use Value: 4.8 mΩ R_DS(on) reduces conduction loss to <3.1 W at full load, improving system efficiency from 92.5 % to 93.8 % vs. 6.5 mΩ alternative.
Synchronous Rectification	Motor Drive Switch
Use Scenario: Secondary-side switch replacing Schottky diode in 48 V output LLC resonant converter. IC Role / Device Role / Timing Role: Synchronous rectifier controlled by transformer-sense timing signals, conducting 120 A peak. Use Value: Body diode t_rr = 88 ns minimizes reverse recovery loss; low Q_rr (0.22 μC) reduces EMI generation during commutation.	Use Scenario: Phase-leg switch in 3-phase BLDC inverter for HVAC compressor driving 5 kW mechanical load. IC Role / Device Role / Timing Role: High-current N-channel switch in inverter leg, switched at 15 kHz with 600 V bus. Use Value: 125 mJ E_AS withstands flyback energy during sudden motor stall; 100 % UIS testing ensures field reliability under dynamic braking.

Uninterruptible Power Supplies (UPS)

AC/DC Switch-Mode Power Supplies

Use Scenario: High-efficiency inverter stage converting 48 V DC battery bank to 120/230 V AC output.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge topology handling 100+ A peak currents during overload transients.

Use Value: 0.75 °C/W R_thJC enables sustained 1.2 kW output without active cooling; 175 °C T_J rating prevents thermal shutdown during 150 % load for 30 s.

Use Scenario: Primary-side switching element in 1 kW telecom rectifier operating at 100 kHz.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in forward converter primary leg, conducting 80 A average current.

Use Value: 4.8 mΩ R_DS(on) reduces conduction loss to <3.1 W at full load, improving system efficiency from 92.5 % to 93.8 % vs. 6.5 mΩ alternative.

Synchronous Rectification

Motor Drive Switch

Use Scenario: Secondary-side switch replacing Schottky diode in 48 V output LLC resonant converter.

IC Role / Device Role / Timing Role: Synchronous rectifier controlled by transformer-sense timing signals, conducting 120 A peak.

Use Value: Body diode t_rr = 88 ns minimizes reverse recovery loss; low Q_rr (0.22 μC) reduces EMI generation during commutation.

Use Scenario: Phase-leg switch in 3-phase BLDC inverter for HVAC compressor driving 5 kW mechanical load.

IC Role / Device Role / Timing Role: High-current N-channel switch in inverter leg, switched at 15 kHz with 600 V bus.

Use Value: 125 mJ E_AS withstands flyback energy during sudden motor stall; 100 % UIS testing ensures field reliability under dynamic braking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP4668PBF	R_DS(on) = 5.2 mΩ @ 10 V, Q_g = 62 nC, R_thJC = 0.85 °C/W, TO-247AC package	Larger footprint and higher gate charge increase PCB area and driver loss; better suited for forced-air-cooled 2 kW+ systems.	Choose when higher avalanche ruggedness (E_AS = 220 mJ) is prioritized over board space and thermal performance.
STP130N10F7	R_DS(on) = 5.0 mΩ @ 10 V, Q_g = 45 nC, R_thJC = 0.95 °C/W, TO-220FP (full-pack) package	Non-isolated drain tab requires insulating washer; lower Q_g improves light-load efficiency but higher R_thJC limits power density.	Prefer for cost-sensitive, medium-power (<800 W) applications where isolation is managed externally and gate drive is constrained.

Compared with IRFP4668PBF and STP130N10F7, SUP70060E-GE3 delivers the lowest thermal resistance and best R_DS(on)/Q_g trade-off in TO-220AB, making it optimal for space-constrained, thermally demanding 1–1.5 kW industrial power stages.

Availability

SUP70060E-GE3 is available at Aetrix Electronics and suitable for uninterruptible power supplies, AC/DC switch-mode power supplies, and motor drive switches requiring stable component supply across long production lifecycles.

Supply support for SUP70060E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The SUP70060E-GE3 belongs to Vishay's ThunderFET® family-engineered for high-current, high-efficiency power conversion in server PSUs, telecom rectifiers, and motor drives where thermal performance and ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for SUP70060E-GE3 at 125 °C case temperature?

The SUP70060E-GE3 supports 75 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation within the 175 °C maximum junction temperature. Designers must verify heatsink performance to maintain T_C ≤ 125 °C under full-load conditions.

Does SUP70060E-GE3 require a gate driver with negative voltage capability?

No, SUP70060E-GE3 does not require negative gate drive. Its gate threshold voltage (V_GS(th)) is 2–4 V and maximum rated V_GS is ±20 V, making it fully compatible with standard 0–10 V or 0–12 V gate drivers. Negative turn-off bias is unnecessary due to its low gate leakage (±100 nA) and robust 100 % R_g testing.

Can SUP70060E-GE3 be used in parallel configurations for higher current handling?

Yes, SUP70060E-GE3 supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. The datasheet confirms stable on-resistance versus junction temperature (normalized R_DS(on) increases ~1.5× from 25 °C to 150 °C), reducing thermal runaway risk. Layout symmetry and individual gate resistors are still required for optimal balance.

What is the typical reverse recovery charge (Q_rr) of the body diode in SUP70060E-GE3?

The typical reverse recovery charge (Q_rr) of the intrinsic body diode in SUP70060E-GE3 is 0.22 μC at I_F = 30 A, dI/dt = 100 A/μs, and T_J = 25 °C. This value is confirmed in the "Drain-Source Body Diode Ratings" section and enables accurate loss calculation in synchronous rectifier designs where Q_rr contributes significantly to switching loss.

Is SUP70060E-GE3 qualified for automotive applications per AEC-Q101?

No, SUP70060E-GE3 is not AEC-Q101 qualified. It is rated for industrial and commercial use with an operating junction temperature range of –55 °C to +175 °C, but Vishay does not list it in their AEC-Q101 qualified MOSFET portfolio. For automotive-grade alternatives, consult Vishay's SQ series or contact Aetrix Electronics for AEC-compliant equivalents.

SUP70060E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: ThunderFET®

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 131A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 81 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3330 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP70060E-GE3 FAQ

1.How can I place an order for SUP70060E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP70060E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP70060E-GE3 reliable?

The price and inventory of SUP70060E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP70060E-GE3 is usually 5 days.

3.What payment methods are accepted for SUP70060E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP70060E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP70060E-GE3?

SUP70060E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP70060E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP70060E-GE3?

For technical support, including SUP70060E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP70060E-GE3 requirements.

6.How does Aetrix verify that SUP70060E-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP70060E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP70060E-GE3 meets industry standards.

7.What is the process for return or replacement of SUP70060E-GE3?

All SUP70060E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP70060E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP70060E-GE3 part is unused and in its original packaging.

Return procedure for SUP70060E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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