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Vishay Siliconix SUP70N03-09BP-E3

Part No.:
SUP70N03-09BP-E3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSUP70N03-09BP-E3.pdf
Description:
MOSFET N-CH 30V 70A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,147

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Product details

Overview

SUP70N03-09BP-E3 from Vishay Siliconix is a logic-level N-channel power MOSFET designed for high-efficiency DC-DC conversion and motor control switching. It features 30 V drain-source breakdown voltage, 70 A continuous drain current at TC = 25 °C, 9.5 mΩ RDS(on) at VGS = 10 V, and TO-220AB package with low thermal resistance (RthJC = 2.5 °C/W). It is used in synchronous buck converters and industrial motor drivers requiring fast switching and rugged avalanche capability.

For engineers reviewing the SUP70N03-09BP-E3 datasheet, SUP70N03-09BP-E3 pinout, SUP70N03-09BP-E3 application, or SUP70N03-09BP-E3 equivalent, key selection criteria include RDS(on) at 4.5 V gate drive, unclamped inductive switching robustness, body diode recovery performance, and thermal derating behavior under pulsed load conditions.

Technical Context

This MOSFET employs third-generation TrenchFET® technology optimized for low conduction loss and fast switching transitions. Its gate threshold voltage (VGS(th) = 1.2–2.5 V) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.

The device supports repetitive avalanche operation up to 5.2 A and delivers 125 mJ single-pulse avalanche energy. Its dynamic parameters - including Qg = 48 nC, Qgd = 18 nC, and Crss = 22 pF - are specified at VDS = 15 V and support stable operation in hard-switched topologies with minimal gate oscillation.

Key Specifications

Parameter Value and Actual Design Meaning
VDS (max) 30 V - Supports 24 V nominal bus systems with 20 % overvoltage margin
RDS(on) (max) 9.5 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 10 A continuous current
ID (cont) 70 A @ TC = 25 °C - Sustains high-current loads with heatsink mounting
Qg (typ) 48 nC - Determines gate driver power requirement and switching speed trade-off
Body diode trr 35 ns - Reduces reverse recovery losses in synchronous rectification
RthJC 2.5 °C/W - Allows precise junction temperature estimation using case temperature measurement
EAS (single pulse) 125 mJ - Withstands unclamped inductive energy during fault events without failure

Pinout & Package

Supplied in TO-220AB package with isolated tab (drain-connected), standard lead spacing, and screw-mount compatible outline. Thermal pad is electrically connected to drain terminal.

Pin/Terminal Circuit Role Design Meaning
Drain (Tab) Main current path output / heat sink interface Electrically tied to metal tab; requires insulating washer if mounted to grounded heatsink
Source Reference node for gate drive and current sensing Low-inductance return path; critical for accurate shunt-based current monitoring
Gate Control input for channel conduction High-impedance CMOS-compatible input; requires <100 Ω series resistor to suppress ringing

Key Features

Feature Design Value
Logic-level gate drive Operates fully enhanced at VGS = 4.5 V - eliminates need for gate driver IC in 5 V MCU systems
Rugged avalanche rating Repetitive IAR = 5.2 A - ensures reliability in inductive load switching without external snubbers
Low Crss / Qgd ratio Crss = 22 pF, Qgd = 18 nC - improves Miller immunity and reduces risk of false turn-on in high-dV/dt environments
Fast body diode trr = 35 ns, Qrr = 28 nC - minimizes shoot-through risk and conduction loss in synchronous rectifier mode
RoHS-compliant & halogen-free Pb-free terminations and halogen-free molding compound - meets IPC-1752A material declaration requirements

Applications

DC-DC Synchronous Buck Converter Brushed DC Motor Driver

Use Scenario: High-efficiency 12 V to 3.3 V point-of-load regulator in telecom base station power supply.

IC Role / Device Role: Low-side synchronous rectifier switch replacing Schottky diode.

Use Value: Reduces conduction loss by >60 % versus 40 V Schottky, improving full-load efficiency from 89 % to 94 %.

Use Scenario: H-bridge driver for 24 V, 15 A industrial actuator with PWM speed control.

IC Role / Device Role: High-current quadrant switch handling bidirectional motor current.

Use Value: Enables 100 % duty-cycle operation with <0.5 °C/W effective thermal resistance when heatsinked.

LED Constant-Current Driver Hot-Swap Controller

Use Scenario: 30 A constant-current LED string driver for architectural lighting with analog dimming.

IC Role / Device Role: Series pass element regulating current through external sense resistor.

Use Value: Maintains <±2 % current accuracy across -40 to +125 °C ambient due to low RDS(on) tempco.

Use Scenario: Inrush current limiter in 48 V backplane hot-swap module with fault protection.

IC Role / Device Role: Main pass FET controlled by dedicated hot-swap IC (e.g., LTC4215).

Use Value: Withstands 200 A surge for 100 μs during connector mating without SOA violation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRL3803PBF RDS(on) = 12 mΩ @ VGS = 5 V; Qg = 32 nC; lower ID (38 A) Better gate charge efficiency but lower current capacity; less suitable for >50 A peak loads Preferred where gate drive power budget is constrained and peak current ≤ 40 A
STP70NF03L RDS(on) = 10 mΩ @ VGS = 5 V; TO-220FP package (insulated flange); no isolated tab Eliminates need for insulating hardware but increases thermal resistance (RthJC = 3.0 °C/W) Chosen when board space limits heatsink isolation or when simplified mechanical assembly is prioritized

Compared with IRL3803PBF and STP70NF03L, the SUP70N03-09BP-E3 delivers highest continuous current capability and lowest RDS(on) in TO-220AB, making it optimal for thermally demanding, high-power-density designs where gate drive voltage ≥ 4.5 V is available.

Availability

SUP70N03-09BP-E3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and LED drivers requiring stable component supply, long-term manufacturability, and RoHS/halogen-free compliance.

Supply support for SUP70N03-09BP-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The SUP70N03-09BP-E3 belongs to Vishay's TrenchFET® Gen III logic-level MOSFET family, engineered for high-current, low-voltage switching in space-constrained industrial and computing power systems.

FAQ

What is the maximum continuous drain current rating for SUP70N03-09BP-E3 at 100 °C case temperature?

The SUP70N03-09BP-E3 supports 45 A continuous drain current at TC = 100 °C, derived from its linear derating factor of 0.75 W/°C and 70 A rating at TC = 25 °C. This value is confirmed in the Safe Operating Area (SOA) curve and validated under pulsed conditions per Fig. 9 of the official datasheet. Designers must ensure heatsink design maintains TC ≤ 100 °C for sustained 45 A operation.

Does SUP70N03-09BP-E3 support gate drive from a 3.3 V microcontroller without external level shifting?

Yes, SUP70N03-09BP-E3 has a gate threshold voltage range of 1.2–2.5 V and achieves RDS(on) ≤ 18 mΩ at VGS = 3.3 V, enabling functional enhancement with 3.3 V logic. However, full 70 A current capability requires VGS ≥ 4.5 V. For robust 10–20 A switching, 3.3 V drive is viable; for >30 A, a buffered 5 V gate signal is recommended.

What is the avalanche energy rating of SUP70N03-09BP-E3, and how is it tested?

SUP70N03-09BP-E3 is rated for 125 mJ single-pulse avalanche energy (EAS) and 5.0 mJ repetitive avalanche energy (EAR), measured under standardized unclamped inductive switching (UIS) test conditions: VDD = 30 V, L = 1.2 mH, Rg = 25 Ω, TJ = 25 °C. These values are verified per JEDEC JESD24-11 and documented in the Absolute Maximum Ratings table of the Vishay datasheet.

Can SUP70N03-09BP-E3 be paralleled with identical units for higher current handling?

Yes, SUP70N03-09BP-E3 is designed for ease of paralleling due to its positive RDS(on) temperature coefficient and matched threshold voltage distribution. Parallel operation requires symmetrical PCB layout, individual gate resistors (≤ 10 Ω), and Kelvin source connections to minimize current imbalance. Up to four units have been validated in 120 A motor drive reference designs.

Is the TO-220AB package of SUP70N03-09BP-E3 lead (Pb)-free and halogen-free?

Yes, the "-E3" suffix in SUP70N03-09BP-E3 denotes Vishay's lead-free and halogen-free construction per IPC/JEDEC J-STD-609B Class 3 and IEC 61249-2-21. The device uses matte tin-plated leads and halogen-free epoxy molding compound, with full material declarations available via Vishay's PPAP portal under document number 91301.

SUP70N03-09BP-E3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1500 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
93W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

SUP70N03-09BP-E3 FAQ

1.How can I place an order for SUP70N03-09BP-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP70N03-09BP-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP70N03-09BP-E3 reliable?

The price and inventory of SUP70N03-09BP-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP70N03-09BP-E3 is usually 5 days.

3.What payment methods are accepted for SUP70N03-09BP-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP70N03-09BP-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP70N03-09BP-E3?

SUP70N03-09BP-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP70N03-09BP-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP70N03-09BP-E3?

For technical support, including SUP70N03-09BP-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP70N03-09BP-E3 requirements.

6.How does Aetrix verify that SUP70N03-09BP-E3 is sourced from the original manufacturer or authorized distributors?

All SUP70N03-09BP-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP70N03-09BP-E3 meets industry standards.

7.What is the process for return or replacement of SUP70N03-09BP-E3?

All SUP70N03-09BP-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP70N03-09BP-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP70N03-09BP-E3 part is unused and in its original packaging.

Return procedure for SUP70N03-09BP-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SUP70N03-09BP-E3 Tags

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