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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP75P03-07-E3

Name: SUP75P03-07-E3
Brand: Vishay Siliconix
SKU: SUP75P03-07-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP75P03-07-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP75P03-07-E3.pdf

Description:: MOSFET P-CH 30V 75A TO220AB

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Product details

Overview

SUP75P03-07-E3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET rated for -30 V drain-source voltage, 0.007 Ω R_DS(on) at -10 V gate drive, and ±75 A continuous drain current at T_C = 25 °C. It features TO-220AB packaging with drain-connected tab, 175 °C maximum junction temperature, and is RoHS-compliant (lead-free). It serves as a high-current power switch in DC-DC converters and motor control H-bridge high-side configurations.

For engineers reviewing the SUP75P03-07-E3 datasheet, SUP75P03-07-E3 pinout, SUP75P03-07-E3 application, or SUP75P03-07-E3 equivalent, key selection criteria include its -30 V V_DS, low 0.007 Ω on-resistance at -10 V, 187 W power dissipation capability, integrated source-drain diode with 55–100 ns reverse recovery time, and thermal resistance of 0.8 °C/W junction-to-case.

Technical Context

This device operates as a single P-channel silicon MOSFET with fully specified avalanche energy rating (180 mJ) and SOA-limited switching performance. Its gate threshold voltage range (-1 V to -3 V) ensures reliable turn-on with standard logic-level negative gate drive, while its 9000 pF input capacitance and 240 nC total gate charge define driver sizing requirements for hard-switched topologies.

The SUP75P03-07-E3 supports high-duty-cycle operation up to 175 °C junction temperature and exhibits monotonic R_DS(on) increase with temperature-0.013 Ω at 175 °C under -30 A conditions-enabling predictable thermal design in conduction-dominated applications like battery disconnect and load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage before avalanche onset; defines use in ≤30 V bus systems.
R_DS(on) @ V_GS = -10 V	0.007 Ω - Enables <1.6 W conduction loss at 75 A; critical for high-efficiency power stages.
I_D Continuous @ T_C = 25 °C	±75 A - Package-limited current; requires heatsinking for sustained operation above ~40 A.
Q_g Total Gate Charge	160–240 nC - Determines gate driver peak current requirement (~96 mA avg over 2.5 Ω R_g).
R_thJC	0.8 °C/W - Enables direct thermal interface to heatsink; allows precise junction temperature estimation.
V_SD Forward Voltage	-1.2 to -1.5 V @ -75 A - Defines body diode conduction loss during synchronous rectification or freewheeling.
E_AR Avalanche Energy	180 mJ - Supports unclamped inductive switching without failure; enables robustness in relay/motor drive.

Pinout & Package

Package: TO-220AB, through-hole, drain-connected metal tab (electrically active), insulated mounting surface required.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain terminal	Electrically connected to drain; must be isolated from heatsink unless heatsink is referenced to drain potential.
Lead 1 (Source)	Source connection	Reference node for gate drive; carries full load current and body diode return path.
Lead 2 (Gate)	Control input	High-impedance MOSFET gate; requires negative voltage relative to source to turn on (V_GS ≤ -1 V).
Lead 3 (Source)	Source connection (dual-source lead)	Second source lead for low-inductance layout; used in Kelvin-source configurations to separate sense and power paths.

Key Features

Feature	Design Value
P-channel enhancement mode	Enables high-side switching without level-shifting gate drivers in low-voltage DC systems.
175 °C maximum junction temperature	Supports operation in harsh environments (e.g., automotive under-hood, industrial motor drives) with derated current.
RoHS-compliant lead-free termination	Meets global environmental regulations; compatible with Pb-free reflow and wave soldering processes.
Drain-connected tab with insulation requirement	Requires electrically isolating hardware (e.g., mica washer + shoulder washer) when mounted to grounded heatsink.
Specified repetitive avalanche capability	Guarantees survivability during inductive turn-off transients without external snubbers in properly designed circuits.

Applications

Automotive Battery Disconnect	Industrial DC Motor Control
Use Scenario: High-side main battery isolation switch in 12 V/24 V vehicle systems, activated during ignition-off or fault conditions. IC Role / Device Role / Timing Role: Power MOSFET acting as controlled series disconnect element between battery and downstream loads. Use Value: Low 0.007 Ω R_DS(on) minimizes standby leakage and voltage drop; 175 °C rating ensures reliability across engine bay temperature extremes.	Use Scenario: High-side switch in half-bridge or H-bridge driver for brushed DC motors in factory automation equipment. IC Role / Device Role / Timing Role: P-channel high-side switch enabling bidirectional motor control with simplified gate drive architecture. Use Value: Negative gate drive compatibility eliminates need for bootstrap capacitors or isolated supplies; avalanche rating handles motor inductive kickback.
Server PSU OR-ing Circuit	Telecom Hot-Swap Controller
Use Scenario: OR-ing FET in redundant 12 V server power supply units to prevent backfeed and enable seamless switchover. IC Role / Device Role / Timing Role: Low-loss conduction path replacing Schottky diodes; controlled by external OR-ing controller IC. Use Value: 0.007 Ω R_DS(on) reduces power loss by >80% vs. typical 0.5 V diode drop at 50 A; Kelvin-source leads support accurate current sensing.	Use Scenario: Inrush-limiting and fault-isolation switch in hot-swap modules for 48 V telecom distribution boards. IC Role / Device Role / Timing Role: Main power FET controlled by hot-swap controller to manage board insertion surge and short-circuit protection. Use Value: 187 W power dissipation and 0.8 °C/W R_thJC allow high-current inrush handling with minimal thermal rise; fast 55 ns t_rr limits diode conduction loss during transient events.

Automotive Battery Disconnect

Industrial DC Motor Control

Use Scenario: High-side main battery isolation switch in 12 V/24 V vehicle systems, activated during ignition-off or fault conditions.

IC Role / Device Role / Timing Role: Power MOSFET acting as controlled series disconnect element between battery and downstream loads.

Use Value: Low 0.007 Ω R_DS(on) minimizes standby leakage and voltage drop; 175 °C rating ensures reliability across engine bay temperature extremes.

Use Scenario: High-side switch in half-bridge or H-bridge driver for brushed DC motors in factory automation equipment.

IC Role / Device Role / Timing Role: P-channel high-side switch enabling bidirectional motor control with simplified gate drive architecture.

Use Value: Negative gate drive compatibility eliminates need for bootstrap capacitors or isolated supplies; avalanche rating handles motor inductive kickback.

Server PSU OR-ing Circuit

Telecom Hot-Swap Controller

Use Scenario: OR-ing FET in redundant 12 V server power supply units to prevent backfeed and enable seamless switchover.

IC Role / Device Role / Timing Role: Low-loss conduction path replacing Schottky diodes; controlled by external OR-ing controller IC.

Use Value: 0.007 Ω R_DS(on) reduces power loss by >80% vs. typical 0.5 V diode drop at 50 A; Kelvin-source leads support accurate current sensing.

Use Scenario: Inrush-limiting and fault-isolation switch in hot-swap modules for 48 V telecom distribution boards.

IC Role / Device Role / Timing Role: Main power FET controlled by hot-swap controller to manage board insertion surge and short-circuit protection.

Use Value: 187 W power dissipation and 0.8 °C/W R_thJC allow high-current inrush handling with minimal thermal rise; fast 55 ns t_rr limits diode conduction loss during transient events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	Higher R_DS(on) (0.02 Ω @ -10 V), lower I_D (74 A), same TO-220AB package, no specified avalanche energy.	Less suitable for repetitive inductive switching; acceptable where conduction loss budget permits higher resistance.	Select when cost sensitivity outweighs avalanche robustness and lowest possible R_DS(on).
IXTP75P03T	Same V_DS (-30 V), slightly higher R_DS(on) (0.0085 Ω @ -10 V), TO-220 package, 150 °C max T_J, no tab-drain connection.	Requires different mechanical mounting (isolated tab); lower thermal limit restricts high-temperature operation.	Prefer where lower thermal rating is acceptable and drain-isolated mounting simplifies heatsink integration.

Compared with IRF4905PbF and IXTP75P03T, the SUP75P03-07-E3 delivers superior conduction efficiency, guaranteed avalanche ruggedness, and higher junction temperature tolerance-making it optimal for thermally constrained, inductively loaded, or safety-critical high-current P-channel switching.

Availability

SUP75P03-07-E3 is available at Aetrix Electronics and suitable for automotive battery management, industrial motor drives, and telecom hot-swap systems requiring stable component supply, long-term manufacturability, and RoHS-compliant sourcing.

Supply support for SUP75P03-07-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SUP75P03-07-E3 belongs to Vishay's TrenchFET® Gen IV P-channel MOSFET family, engineered for high-current, low-voltage switching in automotive, industrial, and computing power systems.

FAQ

What is the maximum continuous drain current for SUP75P03-07-E3 at 125 °C case temperature?

The SUP75P03-07-E3 supports -65 A continuous drain current at T_C = 125 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be validated against actual PCB layout and heatsink performance. The device remains fully functional at this current if junction temperature stays within -55 °C to 175 °C range.

Does SUP75P03-07-E3 have a drain-connected tab, and what does that mean for mounting?

Yes, the SUP75P03-07-E3 has a drain-connected metal tab in its TO-220AB package. This means the tab is electrically tied to the drain terminal and must be electrically isolated from the heatsink using an insulating washer (e.g., mica or ceramic) unless the heatsink is intentionally held at drain potential. Failure to isolate may cause short circuits or ground loops.

What is the typical gate threshold voltage range for SUP75P03-07-E3, and how does it affect drive requirements?

The SUP75P03-07-E3 has a gate threshold voltage range of -1 V to -3 V (V_GS(th)) at T_J = 25 °C. This ensures reliable turn-on with modest negative gate drive, but full enhancement requires V_GS ≤ -4.5 V for 0.010 Ω R_DS(on). Designers must ensure gate driver can sink sufficient current to achieve and maintain these negative voltages relative to source.

Can SUP75P03-07-E3 be used in synchronous rectification applications?

The SUP75P03-07-E3 is not optimized for synchronous rectification due to its relatively high body diode forward voltage (-1.2 to -1.5 V) and slow reverse recovery (55–100 ns). While functional in low-frequency freewheeling roles, N-channel alternatives with lower V_F and faster t_rr are preferred for high-efficiency synchronous buck or LLC rectification.

Is SUP75P03-07-E3 suitable for avalanche-rated operation, and what is its rated energy?

Yes, the SUP75P03-07-E3 is fully specified for repetitive avalanche operation with a rated energy of 180 mJ (E_AR) at L = 0.1 mH. This rating is guaranteed by design and enables robust use in inductive load switching-such as solenoid drivers or motor phase control-without external snubbers, provided operating conditions stay within the SOA curve.

SUP75P03-07-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.75W (Ta), 187W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP75P03-07-E3 FAQ

1.How can I place an order for SUP75P03-07-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP75P03-07-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP75P03-07-E3 reliable?

The price and inventory of SUP75P03-07-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP75P03-07-E3 is usually 5 days.

3.What payment methods are accepted for SUP75P03-07-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP75P03-07-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP75P03-07-E3?

SUP75P03-07-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP75P03-07-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP75P03-07-E3?

For technical support, including SUP75P03-07-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP75P03-07-E3 requirements.

6.How does Aetrix verify that SUP75P03-07-E3 is sourced from the original manufacturer or authorized distributors?

All SUP75P03-07-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP75P03-07-E3 meets industry standards.

7.What is the process for return or replacement of SUP75P03-07-E3?

All SUP75P03-07-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP75P03-07-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP75P03-07-E3 part is unused and in its original packaging.

Return procedure for SUP75P03-07-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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