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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP85N03-04P-E3

Name: SUP85N03-04P-E3
Brand: Vishay Siliconix
SKU: SUP85N03-04P-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP85N03-04P-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP85N03-04P-E3.pdf

Description:: MOSFET N-CH 30V 85A TO220AB

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Product details

Overview

SUP85N03-04P from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 30 V drain-source voltage, 85 A continuous drain current at TC = 25 °C, and 0.0043 Ω rDS(on) at VGS = 10 V. It operates up to 175 °C junction temperature and uses TO-263 (D2PAK) package with drain-connected tab, targeting high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the SUP85N03-04P datasheet, SUP85N03-04P pinout, SUP85N03-04P application, or SUP85N03-04P equivalent, key selection criteria include its 0.007 Ω rDS(on) at 4.5 V gate drive, 71 nC total gate charge, 175 °C thermal rating, and lead-free D2PAK packaging for industrial power stages requiring robust conduction and switching performance.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low on-resistance and fast switching in synchronous rectification and high-side/low-side switching configurations. Its 0.9 °C/W junction-to-case thermal resistance and 40 °C/W junction-to-ambient rating (PCB mount) support thermally constrained board-level designs.

The device features a built-in body diode with 1.1–1.5 V forward voltage at 85 A and 42–70 ns reverse recovery time, enabling use in freewheeling paths without external diodes. Avalanche energy rating of 280 mJ (L = 0.1 mH) supports unclamped inductive switching reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V and 24 V bus applications
r_DS(on) @ V_GS = 10 V	0.0043 Ω - Enables <1 W conduction loss at 85 A in high-current power rails
r_DS(on) @ V_GS = 4.5 V	0.007 Ω - Supports logic-level gate drive from 3.3 V/5 V microcontrollers
Q_g	71–90 nC - Determines gate driver power requirement and switching speed trade-off
T_J max	175 °C - Allows operation in sealed enclosures or high-ambient environments
R_thJC	0.9 °C/W - Enables direct heatsink mounting for >100 W dissipation capability
I_D (continuous)	85 A @ T_C = 25 °C - Package-limited current suitable for high-power buck stages

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, drain-connected tab for thermal and electrical connection to PCB heatsink plane.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≤20 V gate-source swing and low-impedance drive due to 71–90 nC Q_g
D	Drain	High-side or low-side switch node; internally connected to metal tab for thermal path and current return
S	Source	Reference node for gate drive; ties to power ground or floating source in high-side configuration

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers ultra-low r_DS(on) and high cell density in D2PAK footprint for compact power stages
100 % R_g tested	Ensures consistent gate resistance (0.7–3.8 Ω) across production lots, critical for parallel operation
Lead-free (RoHS-compliant)	E3 suffix confirms Pb-free terminations and halogen-free molding compound per JEDEC J-STD-020
175 °C TJ rating	Supports extended lifetime in automotive under-hood or industrial motor control environments
280 mJ avalanche energy	Enables reliable operation in inductive load switching without external snubbers in many cases

Applications

DC-DC Synchronous Buck Converter	Brushed DC Motor Driver
Use Scenario: High-efficiency 12 V input to 3.3/5 V output conversion in telecom power supplies. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss. Use Value: 0.0043 Ω r_DS(on) cuts rectifier loss by >60 % vs. 40 V Schottky, improving full-load efficiency by ~1.2 %.	Use Scenario: Full-bridge H-bridge driving 24 V, 50 A brushed motors in industrial actuators. IC Role / Device Role: High-current quadrant switch with integrated body diode for regenerative braking. Use Value: 85 A continuous rating and 240 A pulsed current handle peak stall currents; 42–70 ns trr enables clean commutation.
Automotive HVAC Blower Control	Server VRM High-Side Switch
Use Scenario: PWM-controlled blower fan in passenger compartment with ambient up to 85 °C. IC Role / Device Role: Low-side switch in single-MOSFET drive topology with PWM duty cycle modulation. Use Value: 175 °C T_J rating ensures margin over under-dash ambient; 0.007 Ω r_DS(on) at 4.5 V enables direct MCU GPIO drive.	Use Scenario: High-side switch in multiphase 48 V to 1 V VRM for AI accelerators. IC Role / Device Role: Power stage switch operating at 300–500 kHz with tight thermal constraints. Use Value: 0.9 °C/W R_thJC allows direct copper pad attachment to heatsink; 71 nC Q_g balances switching loss and drive complexity.

DC-DC Synchronous Buck Converter

Brushed DC Motor Driver

Use Scenario: High-efficiency 12 V input to 3.3/5 V output conversion in telecom power supplies.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss.

Use Value: 0.0043 Ω r_DS(on) cuts rectifier loss by >60 % vs. 40 V Schottky, improving full-load efficiency by ~1.2 %.

Use Scenario: Full-bridge H-bridge driving 24 V, 50 A brushed motors in industrial actuators.

IC Role / Device Role: High-current quadrant switch with integrated body diode for regenerative braking.

Use Value: 85 A continuous rating and 240 A pulsed current handle peak stall currents; 42–70 ns trr enables clean commutation.

Automotive HVAC Blower Control

Server VRM High-Side Switch

Use Scenario: PWM-controlled blower fan in passenger compartment with ambient up to 85 °C.

IC Role / Device Role: Low-side switch in single-MOSFET drive topology with PWM duty cycle modulation.

Use Value: 175 °C T_J rating ensures margin over under-dash ambient; 0.007 Ω r_DS(on) at 4.5 V enables direct MCU GPIO drive.

Use Scenario: High-side switch in multiphase 48 V to 1 V VRM for AI accelerators.

IC Role / Device Role: Power stage switch operating at 300–500 kHz with tight thermal constraints.

Use Value: 0.9 °C/W R_thJC allows direct copper pad attachment to heatsink; 71 nC Q_g balances switching loss and drive complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF8726PbF	r_DS(on) = 0.0032 Ω @ 10 V, Q_g = 17 nC, TO-220AB package	Lower gate charge but higher thermal resistance (1.5 °C/W); not surface-mount	Prefer when through-hole mounting and minimal drive loss are priorities over PCB space
STL220N3LLH6	r_DS(on) = 0.0022 Ω @ 10 V, 60 V rating, PowerFLAT 5x6 package	Higher voltage rating and smaller footprint but lower current rating (60 A) and no 175 °C rating	Prefer when board area is constrained and 60 V margin is required, but 175 °C operation is not needed

Compared with IRF8726PbF and STL220N3LLH6, SUP85N03-04P uniquely balances 85 A current, 175 °C rating, D2PAK thermal performance, and logic-level compatibility-making it optimal for high-reliability, surface-mount industrial power stages where thermal headroom and gate drive simplicity are critical.

Availability

SUP85N03-04P is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, HVAC controls, and server VRMs requiring stable component supply and long-term industrial availability.

Supply support for SUP85N03-04P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

SUP85N03-04P belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered for high-current, high-temperature switching in industrial and automotive power conversion systems.

FAQ

What is the maximum continuous drain current for SUP85N03-04P at 100 °C case temperature?

The SUP85N03-04P supports 85 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and applies to both TO-220AB and TO-263 variants. Derating is required above 100 °C case temperature per the SOA curve, and thermal design must ensure junction temperature remains ≤175 °C under worst-case operating conditions.

Is SUP85N03-04P compatible with 3.3 V microcontroller gate drive?

Yes, SUP85N03-04P delivers 0.007 Ω rDS(on) at VGS = 4.5 V, making it functional with 3.3 V logic levels when used with gate boosting or level-shifting circuitry. However, full 85 A current capability requires ≥4.5 V gate drive; for direct 3.3 V GPIO drive, derating to ~60 A is recommended based on rDS(on) vs. VGS curves in the datasheet.

Does SUP85N03-04P have avalanche capability, and how is it rated?

Yes, SUP85N03-04P is rated for repetitive avalanche with 280 mJ energy (L = 0.1 mH) at TJ = 25 °C. This rating supports unclamped inductive switching in motor drives and relay drivers. The device is 100 % avalanche tested during production, and the SOA curve defines safe operating limits under transient overvoltage conditions.

What is the thermal resistance from junction to ambient for SUP85N03-04P in standard PCB mount?

For SUP85N03-04P in TO-263 (D2PAK) package mounted on a 1" square FR-4 PCB, the junction-to-ambient thermal resistance (RthJA) is 40 °C/W. This value assumes standard copper pour layout; actual performance improves significantly with enhanced heatsinking via the drain-connected tab.

How does the E3 suffix affect the SUP85N03-04P specification and compliance?

The E3 suffix on SUP85N03-04P indicates lead-free (Pb-free) terminations and RoHS-compliant construction per JEDEC J-STD-020. It does not alter electrical or thermal specifications versus non-E3 versions. The device meets halogen-free requirements and supports standard reflow profiles for lead-free assembly, with no impact on maximum junction temperature or avalanche ratings.

SUP85N03-04P-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.3mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.75W (Ta), 166W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP85N03-04P-E3 FAQ

1.How can I place an order for SUP85N03-04P-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP85N03-04P-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP85N03-04P-E3 reliable?

The price and inventory of SUP85N03-04P-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP85N03-04P-E3 is usually 5 days.

3.What payment methods are accepted for SUP85N03-04P-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP85N03-04P-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP85N03-04P-E3?

SUP85N03-04P-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP85N03-04P-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP85N03-04P-E3?

For technical support, including SUP85N03-04P-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP85N03-04P-E3 requirements.

6.How does Aetrix verify that SUP85N03-04P-E3 is sourced from the original manufacturer or authorized distributors?

All SUP85N03-04P-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP85N03-04P-E3 meets industry standards.

7.What is the process for return or replacement of SUP85N03-04P-E3?

All SUP85N03-04P-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP85N03-04P-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP85N03-04P-E3 part is unused and in its original packaging.

Return procedure for SUP85N03-04P-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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