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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP85N03-3M6P-GE3

Name: SUP85N03-3M6P-GE3
Brand: Vishay Siliconix
SKU: SUP85N03-3M6P-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP85N03-3M6P-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP85N03-3M6P-GE3.pdf

Description:: MOSFET N-CH 30V 85A TO220AB

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Product details

Overview

SUP85N03-3M6P-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 30 V drain-source voltage, 85 A continuous drain current (package-limited), and 3.6 mΩ typical R_DS(on) at V_GS = 10 V. It serves as a high-current synchronous rectifier or primary-side switch in low-voltage DC/DC converters and power supplies.

For engineers reviewing the SUP85N03-3M6P-GE3 datasheet, SUP85N03-3M6P-GE3 pinout, SUP85N03-3M6P-GE3 application, or SUP85N03-3M6P-GE3 equivalent, key selection criteria include its 1.6 °C/W junction-to-case thermal resistance, 67 nC total gate charge, 4.5 V logic-level compatibility, avalanche energy rating of 101 mJ, and TO-220AB package suitability for forced-air or heatsink-mounted designs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance with high current capability in a standard through-hole package. Its gate threshold voltage range (1–2.5 V) enables reliable turn-on with 4.5 V logic drivers, while its 100% UIS-tested construction ensures robustness against inductive switching stress.

The device features a built-in body diode with 0.83–1.5 V forward voltage at 10 A and 41–62 ns reverse recovery time, supporting efficient synchronous rectification. Thermal performance is defined by R_thJC = 1.6 °C/W and R_thJA = 40 °C/W (PCB mount), making it suitable for thermally constrained industrial and telecom power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage in power stage; defines use in ≤24 V nominal systems with margin.
R_DS(on) @ 10 V	3.6 mΩ typical - Enables <1 W conduction loss at 85 A, critical for high-efficiency secondary-side rectification.
I_D continuous	85 A (package-limited) - Sustains high output current in DC/DC converters without derating when heatsinked.
Q_g	67 nC typical - Determines gate drive power and switching speed; compatible with standard MOSFET drivers at ≤500 kHz.
E_AS	101 mJ single-pulse - Withstands inductive energy during hard-switching or fault events without failure.
R_thJC	1.6 °C/W - Allows direct thermal path to heatsink; supports >70 W dissipation with 100 °C ΔT.
V_GS(th)	1–2.5 V - Ensures full enhancement with 3.3 V or 5 V logic-level controllers.

Pinout & Package

Package: TO-220AB (3-lead, through-hole, isolated tab). Drain connected to tab for direct heatsinking; G and S pins are bent leads on same side.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≥10 V for lowest R_DS(on), but fully enhanced from 4.5 V.
D	Drain	High-current output node; electrically connected to metal tab for thermal and electrical grounding to heatsink.
S	Source	Reference node for gate drive and current sensing; common return for load current in low-side switch configuration.

Key Features

Feature	Design Value
TrenchFET® technology	Delivers ultra-low R_DS(on) in TO-220AB without requiring die-size increase or exotic packaging.
100 % UIS tested	Guarantees single-pulse avalanche ruggedness up to 101 mJ - eliminates need for external snubbers in flyback or LLC resonant converters.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmentally regulated industrial and telecom deployments.
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V - compatible with microcontroller GPIOs and low-voltage PWM controllers without level-shifting.
Low Q_gd/Q_g ratio	Q_gd = 12.2 nC / Q_g = 67 nC → ~18 % - improves hard-switching efficiency and reduces Miller-induced shoot-through risk.

Applications

Server VRM Output Stage	Telecom DC/DC Brick
Use Scenario: High-current, high-efficiency 12 V input to 1 V/100+ A output conversion in server voltage regulator modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; switched at 300–600 kHz. Use Value: 3.6 mΩ R_DS(on) minimizes conduction loss under heavy load; TO-220AB tab enables direct heatsink mounting for thermal stability.	Use Scenario: Secondary-side power switch in isolated 48 V to 12 V DC/DC bricks used in base station power systems. IC Role / Device Role / Timing Role: Primary-side high-side switch in active clamp forward topology; handles 30 V blocking and 85 A peak currents. Use Value: 101 mJ E_AS withstands clamp circuit energy; 1.6 °C/W R_thJC maintains TJ < 125 °C under full load with forced air.
Industrial PLC Power Supply	Automotive ADAS Camera Module PSU
Use Scenario: 24 V input to 5 V/3 A auxiliary supply in programmable logic controller backplanes. IC Role / Device Role / Timing Role: Primary-side switch in non-isolated buck converter; duty-cycled at 250 kHz. Use Value: 4.5 V logic-level gate enables direct drive from industrial MCU; RoHS/halogen-free compliance meets CE/UL industrial safety requirements.	Use Scenario: 12 V input to 3.3 V/2 A power rail for image sensor and ISP in automotive camera modules. IC Role / Device Role / Timing Role: Low-dropout synchronous rectifier in compact buck converter; operates in ambient up to 85 °C. Use Value: 0.83 V body diode V_SD reduces dead-time losses; -55 to 150 °C operating range satisfies AEC-Q101 ambient requirements.

Server VRM Output Stage

Telecom DC/DC Brick

Use Scenario: High-current, high-efficiency 12 V input to 1 V/100+ A output conversion in server voltage regulator modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; switched at 300–600 kHz.

Use Value: 3.6 mΩ R_DS(on) minimizes conduction loss under heavy load; TO-220AB tab enables direct heatsink mounting for thermal stability.

Use Scenario: Secondary-side power switch in isolated 48 V to 12 V DC/DC bricks used in base station power systems.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active clamp forward topology; handles 30 V blocking and 85 A peak currents.

Use Value: 101 mJ E_AS withstands clamp circuit energy; 1.6 °C/W R_thJC maintains TJ < 125 °C under full load with forced air.

Industrial PLC Power Supply

Automotive ADAS Camera Module PSU

Use Scenario: 24 V input to 5 V/3 A auxiliary supply in programmable logic controller backplanes.

IC Role / Device Role / Timing Role: Primary-side switch in non-isolated buck converter; duty-cycled at 250 kHz.

Use Value: 4.5 V logic-level gate enables direct drive from industrial MCU; RoHS/halogen-free compliance meets CE/UL industrial safety requirements.

Use Scenario: 12 V input to 3.3 V/2 A power rail for image sensor and ISP in automotive camera modules.

IC Role / Device Role / Timing Role: Low-dropout synchronous rectifier in compact buck converter; operates in ambient up to 85 °C.

Use Value: 0.83 V body diode V_SD reduces dead-time losses; -55 to 150 °C operating range satisfies AEC-Q101 ambient requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.7 mΩ @ 10 V; higher Q_g = 131 nC; TO-220AB package.	Lower switching efficiency at >300 kHz due to higher gate charge; better suited for lower-frequency, higher-voltage (40 V) applications.	Choose IRF1404PBF only if 40 V V_DS margin is required and switching frequency is ≤150 kHz.
STP85NF3L	R_DS(on) = 3.5 mΩ @ 10 V; similar Q_g = 65 nC; TO-220FP (full-pack) variant available.	Same electrical performance but TO-220FP offers insulated case; slightly lower thermal resistance (R_thJC = 1.5 °C/W).	STP85NF3L is a functional alternative with identical performance envelope; prefer if insulation from heatsink is required.

Compared with IRF1404PBF and STP85NF3L, SUP85N03-3M6P-GE3 delivers the lowest R_DS(on) among 30 V TO-220AB devices at 3.6 mΩ, combined with industry-leading UIS ruggedness and halogen-free compliance - making it optimal for high-density, high-reliability 24 V system power stages.

Availability

SUP85N03-3M6P-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC bricks, and industrial PLC power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SUP85N03-3M6P-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

SUP85N03-3M6P-GE3 belongs to Vishay's TrenchFET® Gen III power MOSFET family, engineered specifically for high-current, low-voltage DC/DC conversion in computing, telecom, and industrial power systems where thermal density and switching loss are critical.

FAQ

What is the maximum continuous drain current rating for SUP85N03-3M6P-GE3?

The SUP85N03-3M6P-GE3 has a continuous drain current rating of 85 A at T_C = 25 °C, limited by package thermal capacity rather than silicon. At T_C = 70 °C, the rating remains 85 A per the datasheet, but practical design must respect the SOA curve and thermal limits imposed by PCB layout and heatsinking. Derating applies above 70 °C case temperature.

Is SUP85N03-3M6P-GE3 suitable for logic-level gate drive applications?

Yes, SUP85N03-3M6P-GE3 is explicitly characterized for logic-level operation: its gate threshold voltage ranges from 1.0 V to 2.5 V, and it achieves full enhancement with R_DS(on) = 4.4 mΩ at V_GS = 4.5 V. This makes SUP85N03-3M6P-GE3 compatible with 3.3 V and 5 V microcontrollers and PWM controllers without external level-shifting circuitry.

What does the "-GE3" suffix indicate in SUP85N03-3M6P-GE3?

The "-GE3" suffix in SUP85N03-3M6P-GE3 denotes Vishay's lead (Pb)-free and halogen-free packaging standard, compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21. It confirms that the TO-220AB package uses matte tin plating and halogen-free molding compound - a requirement for environmentally regulated industrial and telecom end equipment.

Does SUP85N03-3M6P-GE3 include avalanche energy rating specifications?

Yes, SUP85N03-3M6P-GE3 is 100 % UIS (unclamped inductive switching) tested and specified with a single-pulse avalanche energy rating of 101 mJ at L = 0.1 mH and T_J = 25 °C. This rating is validated per JEDEC JESD24-11 and ensures robustness in flyback, forward, and resonant converter topologies where inductive energy must be safely absorbed.

What is the thermal resistance from junction to case for SUP85N03-3M6P-GE3?

The junction-to-case thermal resistance (R_thJC) for SUP85N03-3M6P-GE3 is 1.6 °C/W, measured from the silicon die to the metal drain tab. This value enables precise thermal modeling when mounted to a heatsink, and supports >70 W power dissipation with a 100 °C temperature rise - assuming low-interface thermal resistance between tab and heatsink surface.

SUP85N03-3M6P-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.6mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3535 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 78.1W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP85N03-3M6P-GE3 FAQ

1.How can I place an order for SUP85N03-3M6P-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP85N03-3M6P-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP85N03-3M6P-GE3 reliable?

The price and inventory of SUP85N03-3M6P-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP85N03-3M6P-GE3 is usually 5 days.

3.What payment methods are accepted for SUP85N03-3M6P-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP85N03-3M6P-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP85N03-3M6P-GE3?

SUP85N03-3M6P-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP85N03-3M6P-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP85N03-3M6P-GE3?

For technical support, including SUP85N03-3M6P-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP85N03-3M6P-GE3 requirements.

6.How does Aetrix verify that SUP85N03-3M6P-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP85N03-3M6P-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP85N03-3M6P-GE3 meets industry standards.

7.What is the process for return or replacement of SUP85N03-3M6P-GE3?

All SUP85N03-3M6P-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP85N03-3M6P-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP85N03-3M6P-GE3 part is unused and in its original packaging.

Return procedure for SUP85N03-3M6P-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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