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Vishay Siliconix SUP85N04-03-E3
- Part No.:
- SUP85N04-03-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SUP85N04-03-E3.pdf
- Description:
- MOSFET N-CH 40V 85A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:9,675
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Product details
Overview
SUP85N04-03 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 85 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature. It delivers rDS(on) of 3.5 mΩ at VGS = 10 V and 5.3 mΩ at VGS = 4.5 V, and is optimized for high-current DC-DC conversion and motor drive stages in industrial power supplies.
For engineers reviewing the SUP85N04-03 datasheet, SUP85N04-03 pinout, SUP85N04-03 application, or SUP85N04-03 equivalent, key selection criteria include its TO-220AB package with drain-connected tab, avalanche energy rating of 280 mJ, thermal resistance RthJC of 0.6 °C/W, and gate charge Qg of 165–250 nC under standard switching conditions.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance while maintaining robust avalanche capability and high-temperature operation up to 175 °C. Its dynamic parameters-including Ciss = 6860 pF, Crss = 800 pF, and Qgd = 55 nC-support efficient hard-switching in synchronous buck converters and half-bridge inverters.
The device features a built-in source-drain diode with VSD = 1.1–1.4 V at IF = 85 A and trr = 60–90 ns, enabling body-diode commutation in H-bridge motor control. Its SOA curve supports pulsed drain currents up to 240 A with strict duty-cycle and voltage-derating constraints.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 40 V - Supports 36 V nominal bus systems with 10 % margin for transients |
| rDS(on) | 3.5 mΩ @ VGS = 10 V, ID = 30 A - Enables < 1.1 W conduction loss at 85 A in TO-220AB |
| ID (Continuous) | 85 A @ TC = 25 °C - Limited by package thermal capacity, not die |
| Qg | 165–250 nC - Determines gate driver power requirement and switching speed trade-off |
| RthJC | 0.6 °C/W - Allows ~150 W dissipation before reaching 175 °C junction limit with 25 °C case |
| EAS | 280 mJ - Withstands single-pulse inductive energy without failure in unclamped inductive switching |
| VGS(th) | 1–3 V - Ensures reliable turn-on with 4.5 V logic-level gate drive |
Pinout & Package
Package: TO-220AB, with drain internally connected to the metal tab (electrically active). Mounting requires isolation hardware if heatsink is grounded.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal; accepts ±20 V max; 100 nA leakage at ±20 V |
| D | Drain | Main power input; electrically tied to metal tab; must be isolated from heatsink unless referenced to same potential |
| S | Source | Power return and reference node for gate drive; defines VGS reference point |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading rDS(on) × Qg figure-of-merit for 40 V class, reducing combined conduction and switching losses |
| 175 °C TJ max rating | Enables operation in sealed enclosures or high-ambient environments without derating below 125 °C ambient |
| Drain-connected tab | Reduces thermal resistance path but mandates electrical isolation when mounting to grounded heatsinks |
| 280 mJ avalanche energy | Eliminates need for external snubbers in relay-driving or solenoid-control applications with inductive kickback |
| Logic-level compatible | Guaranteed turn-on at VGS = 4.5 V (rDS(on) = 5.3 mΩ), supporting direct interface with 5 V microcontrollers and gate drivers |
Applications
| Industrial Motor Drives | High-Efficiency DC-DC Converters |
|---|---|
Use Scenario: Half-bridge gate driver stage controlling 24–48 V brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: High-side and low-side switching element handling peak currents up to 240 A during stall conditions. Use Value: Low rDS(on) minimizes I²R heating during continuous 85 A operation; 175 °C rating sustains performance inside IP65-rated enclosures. | Use Scenario: Primary-side synchronous rectifier in 48 V input, 12 V output telecom power supply. IC Role / Device Role / Timing Role: Main power switch in non-isolated buck converter operating at 200–500 kHz. Use Value: Low Qg and Crss reduce switching losses; SOA compliance ensures reliability under load-step transients. |
| Automotive Body Control Modules | Uninterruptible Power Supplies |
Use Scenario: Load switch for 12 V battery-fed HVAC blower and window lift subsystems. IC Role / Device Role / Timing Role: High-current electronic fuse replacing mechanical relays in centralized power distribution units. Use Value: Avalanche ruggedness absorbs inductive spikes from motor commutation; VGS(th) stability enables robust operation across -40 to 125 °C ambient. | Use Scenario: Inverter leg switch in 2 kVA online UPS delivering clean 230 V AC from 48 V DC battery bank. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in full-bridge topology with active clamp. Use Value: 240 A pulsed current rating supports surge loads; low RthJC simplifies thermal design in space-constrained rack-mount chassis. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | rDS(on) = 4.7 mΩ @ 10 V; RthJC = 0.8 °C/W; EAS = 190 mJ | Lower avalanche energy and higher thermal resistance limit use in high-reliability inductive switching | Preferable where cost sensitivity outweighs avalanche margin and thermal performance |
| STP85NF55-08 | rDS(on) = 8.0 mΩ @ 10 V; VDS = 55 V; TJ max = 175 °C; Qg = 140 nC | Higher voltage rating trades off on-resistance; lower Qg improves switching efficiency at lower currents | Preferred when system bus exceeds 42 V or gate drive is limited to < 100 mA peak |
Compared with IRF1404PBF and STP85NF55-08, the SUP85N04-03 offers superior conduction efficiency at 40 V systems and best-in-class avalanche ruggedness, making it optimal for thermally constrained, high-pulse-current industrial loads where reliability under transient stress is critical.
Availability
SUP85N04-03 is available at Aetrix Electronics and suitable for industrial motor drives, high-efficiency DC-DC converters, and automotive body control modules requiring stable component supply and long-term manufacturing continuity.
Supply support for SUP85N04-03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and ruggedness.
The SUP85N04-03 belongs to Vishay's TrenchFET® Gen III power MOSFET family, engineered specifically for high-current, high-temperature switching in industrial power conversion and motor control where low conduction loss and avalanche survivability are mandatory.
FAQ
What is the maximum continuous drain current rating for SUP85N04-03 at 125 °C case temperature?
The SUP85N04-03 maintains a continuous drain current rating of 85 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects package-limited current handling rather than die limitation, and remains unchanged from its 25 °C rating due to the device's 175 °C junction temperature capability and low RthJC of 0.6 °C/W.
Is SUP85N04-03 suitable for logic-level gate drive from a 3.3 V microcontroller?
No - the SUP85N04-03 is not fully logic-level compatible with 3.3 V drive. Its VGS(th) range is 1–3 V, but rDS(on) is only guaranteed at 4.5 V (5.3 mΩ) and 10 V (3.5 mΩ). At 3.3 V, the device operates in weak inversion with significantly elevated on-resistance and unpredictable switching behavior; a gate driver or level shifter is required for reliable operation.
Does SUP85N04-03 have a built-in ESD protection diode on the gate?
No - the SUP85N04-03 does not integrate gate ESD protection. The datasheet specifies IGSS ≤ 100 nA at ±20 V, confirming absence of internal clamping structures. External gate protection (e.g., 12 V Zener between G and S) is recommended in automated assembly or high-static environments to prevent gate oxide damage during handling or PCB insertion.
Can SUP85N04-03 replace a TO-263 version like SUB85N04-03 in the same PCB footprint?
No - SUP85N04-03 uses TO-220AB, while SUB85N04-03 uses TO-263 (D²PAK); their footprints and thermal mounting methods are incompatible. Though electrically identical, the TO-220AB has a protruding tab requiring screw-mount isolation, whereas TO-263 is surface-mount with exposed drain pad. Board redesign is required for substitution.
What is the safe operating area (SOA) limitation for SUP85N04-03 at 100 VDS and 10 A?
At VDS = 100 V and ID = 10 A, the SUP85N04-03 exceeds its 40 V V(BR)DSS rating and is outside its defined SOA. The device is not rated for operation above 40 V - attempting 100 V will cause immediate avalanche breakdown and likely catastrophic failure. SOA curves in the datasheet apply only up to 40 V and confirm that 10 A is permissible only below ~12 V at DC operation.
SUP85N04-03-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 250 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6860 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.75W (Ta), 250W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SUP85N04-03-E3 FAQ
1.How can I place an order for SUP85N04-03-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUP85N04-03-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUP85N04-03-E3 reliable?
The price and inventory of SUP85N04-03-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP85N04-03-E3 is usually 5 days.
3.What payment methods are accepted for SUP85N04-03-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP85N04-03-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUP85N04-03-E3?
SUP85N04-03-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUP85N04-03-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUP85N04-03-E3?
For technical support, including SUP85N04-03-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP85N04-03-E3 requirements.
6.How does Aetrix verify that SUP85N04-03-E3 is sourced from the original manufacturer or authorized distributors?
All SUP85N04-03-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP85N04-03-E3 meets industry standards.
7.What is the process for return or replacement of SUP85N04-03-E3?
All SUP85N04-03-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP85N04-03-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUP85N04-03-E3 part is unused and in its original packaging.
Return procedure for SUP85N04-03-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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