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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP85N10-10-E3

Name: SUP85N10-10-E3
Brand: Vishay Siliconix
SKU: SUP85N10-10-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP85N10-10-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP85N10-10-E3.pdf

Description:: MOSFET N-CH 100V 85A TO220AB

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Product details

Overview

SUP85N10-10-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 100 V drain-source voltage, 85 A continuous drain current at TC = 25 °C, and 0.0105 Ω typical RDS(on) at VGS = 10 V. It operates up to 175 °C junction temperature and features a TO-220AB package with drain-connected tab, suited for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the SUP85N10-10-E3 datasheet, SUP85N10-10-E3 pinout, SUP85N10-10-E3 application, or SUP85N10-10-E3 equivalent, key selection criteria include its 100 V breakdown rating, low 10.5 mΩ on-resistance at 10 V gate drive, thermal robustness to 175 °C, and avalanche energy rating of 280 mJ - critical for inductive load switching reliability.

Technical Context

This device uses trench-gate silicon technology to achieve low RDS(on) while maintaining rugged avalanche performance. Its SOA curve supports pulsed operation up to 240 A with proper thermal management, and the body diode exhibits 1.0–1.5 V forward voltage at 85 A with 85–140 ns reverse recovery time.

The gate threshold voltage (1–3 V) enables compatibility with 3.3 V and 5 V logic-level drivers when used with appropriate gate resistance. Thermal resistance from junction-to-case is 0.6 °C/W, enabling high-power dissipation when mounted on heatsinks - essential for industrial motor control and UPS systems requiring sustained conduction.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V bus systems with 2× safety margin against transients
R_DS(on)	0.0105 Ω @ V_GS = 10 V - delivers <1 W conduction loss at 10 A, reducing heatsink requirements
I_D (cont)	85 A @ T_C = 25 °C - enables high-current switching in power supplies without parallel devices
E_AS	280 mJ - withstands repetitive inductive turn-off stress in motor drives without failure
T_J max	175 °C - allows operation in sealed enclosures or high-ambient industrial environments
Q_g	105–160 nC - determines gate driver power requirement and switching speed trade-off
C_iss	6550 pF - impacts Miller effect and requires careful gate drive design for fast transitions

Pinout & Package

Package: TO-220AB, through-hole, drain-connected metal tab for direct heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives gate drive signal; threshold 1–3 V; requires 105–160 nC total charge for full enhancement
D (Drain)	High-side current path	Connected internally to metal tab; must be electrically isolated from heatsink unless system ground referenced
S (Source)	Return path / reference node	Common return for gate drive and load current; defines local ground for driver circuitry

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.0105 Ω R_DS(on) at 100 V rating - superior conductivity vs. planar MOSFETs in same voltage class
175 °C maximum junction temperature	Supports operation in sealed industrial enclosures or automotive under-hood zones without derating
280 mJ single-pulse avalanche energy	Eliminates need for external snubbers in relay replacement or solenoid driving applications
Drain-connected tab (TO-220AB)	Provides low-thermal-resistance path (0.6 °C/W) to heatsink - critical for >50 W continuous dissipation
RoHS-compliant lead-free termination (E3)	Meets EU Directive 2011/65/EU without exemptions; compatible with Pb-free reflow and wave soldering

Applications

Motor Drive Half-Bridge	DC-DC Converter Primary Switch
Use Scenario: High-current brushed DC motor control in automated gate operators and conveyor systems. IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration, handling bidirectional 85 A peak currents with fast PWM switching. Use Value: 0.0105 Ω R_DS(on) minimizes I²R losses during 100% duty cycle stall conditions, extending thermal margin.	Use Scenario: Primary-side synchronous rectifier in 48 V input telecom DC-DC modules delivering 200 W output. IC Role / Device Role / Timing Role: High-efficiency main switch operating at 100–300 kHz with 10 V gate drive. Use Value: 6550 pF C_iss and 265 pF Crss> enable predictable turn-on/turn-off timing with standard gate drivers.
UPS Inverter Stage	Solenoid/Relay Replacement
Use Scenario: Output stage in line-interactive UPS inverters converting 48 V battery to 120/230 VAC via full-bridge topology. IC Role / Device Role / Timing Role: High-reliability power switch subjected to frequent short-circuit and overload events. Use Value: 280 mJ E_AS and 75 A I_AS ensure survival during AC line fault conditions without external protection.	Use Scenario: Solid-state replacement for 24 VDC industrial relays controlling hydraulic valves and pneumatic actuators. IC Role / Device Role / Timing Role: Inductive load switch with integrated body diode for freewheeling current recirculation. Use Value: 1.0–1.5 V V_SD and 85–140 ns t_rr reduce switching losses and EMI during valve de-energization.

Motor Drive Half-Bridge

DC-DC Converter Primary Switch

Use Scenario: High-current brushed DC motor control in automated gate operators and conveyor systems.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration, handling bidirectional 85 A peak currents with fast PWM switching.

Use Value: 0.0105 Ω R_DS(on) minimizes I²R losses during 100% duty cycle stall conditions, extending thermal margin.

Use Scenario: Primary-side synchronous rectifier in 48 V input telecom DC-DC modules delivering 200 W output.

IC Role / Device Role / Timing Role: High-efficiency main switch operating at 100–300 kHz with 10 V gate drive.

Use Value: 6550 pF C_iss and 265 pF Crss> enable predictable turn-on/turn-off timing with standard gate drivers.

UPS Inverter Stage

Solenoid/Relay Replacement

Use Scenario: Output stage in line-interactive UPS inverters converting 48 V battery to 120/230 VAC via full-bridge topology.

IC Role / Device Role / Timing Role: High-reliability power switch subjected to frequent short-circuit and overload events.

Use Value: 280 mJ E_AS and 75 A I_AS ensure survival during AC line fault conditions without external protection.

Use Scenario: Solid-state replacement for 24 VDC industrial relays controlling hydraulic valves and pneumatic actuators.

IC Role / Device Role / Timing Role: Inductive load switch with integrated body diode for freewheeling current recirculation.

Use Value: 1.0–1.5 V V_SD and 85–140 ns t_rr reduce switching losses and EMI during valve de-energization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP85NF10	R_DS(on) = 0.012 Ω @ 10 V; Q_g = 120 nC; TO-220FP package (isolated tab)	Lower thermal resistance to heatsink not required; better suited for space-constrained layouts needing insulated mounting	Select when electrical isolation between drain and heatsink is mandatory, or when lower gate charge improves efficiency at high frequency
IRF540NPBF	R_DS(on) = 0.044 Ω @ 10 V; 33 A I_D; 175 °C T_J rating retained	Lower current/voltage capability; suitable only for <100 W loads with relaxed thermal constraints	Choose for cost-sensitive, lower-power designs where 85 A rating is unnecessary and board space is limited

Compared with STP85NF10 and IRF540NPBF, the SUP85N10-10-E3 delivers superior conduction efficiency (10.5 mΩ vs. 12/44 mΩ) and higher avalanche ruggedness (280 mJ vs. 190/120 mJ), making it optimal for high-reliability 48–100 V industrial power stages where thermal headroom and fault tolerance are critical.

Availability

SUP85N10-10-E3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for SUP85N10-10-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and reliability.

The SUP/SUB85N10-10 series targets high-current, high-temperature industrial power switching - designed specifically for motor control, UPS, and industrial SMPS where avalanche capability and 175 °C operation are non-negotiable.

FAQ

What is the maximum continuous drain current for SUP85N10-10-E3 at 125 °C case temperature?

The SUP85N10-10-E3 supports 60 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify heatsink performance to maintain TC ≤ 125 °C under full-load conditions.

Does SUP85N10-10-E3 have a built-in body diode, and what are its key characteristics?

Yes, the SUP85N10-10-E3 integrates a source-drain body diode with 85 A continuous current rating and 240 A pulsed capability. Its forward voltage is 1.0–1.5 V at 85 A, and reverse recovery time is 85–140 ns under IF = 50 A and di/dt = 100 A/μs. These parameters make it suitable for freewheeling in inductive switching applications without external diodes.

Is SUP85N10-10-E3 RoHS compliant, and what does the "E3" suffix indicate?

Yes, SUP85N10-10-E3 is RoHS compliant. The "E3" suffix denotes lead-free (Pb-free) terminations per EU Directive 2011/65/EU, using 100 % matte tin plating. It is qualified for standard Pb-free reflow and wave soldering processes, with no exemptions applied - distinct from the tin/lead-plated SUP85N10-10 variant.

What is the gate threshold voltage range for SUP85N10-10-E3, and how does it affect driver selection?

The gate threshold voltage (V_GS(th)) for SUP85N10-10-E3 is 1–3 V at ID = 250 μA. This low threshold enables use with 3.3 V microcontrollers or logic-level drivers, but full enhancement requires ≥10 V gate drive to achieve the rated 0.0105 Ω R_DS(on). A gate driver capable of sourcing/sinking ≥1 A peak current is recommended to manage its 105–160 nC total gate charge efficiently.

How does the avalanche rating of SUP85N10-10-E3 compare to standard power MOSFETs, and why does it matter?

The SUP85N10-10-E3 is rated for 280 mJ single-pulse avalanche energy (E_AS) and 75 A avalanche current (I_AS). This exceeds most general-purpose MOSFETs by 2–3× and is critical in inductive load switching (e.g., motors, solenoids) where voltage spikes exceed V_DS rating. It eliminates reliance on external clamping circuits, improving system reliability and reducing BOM count.

SUP85N10-10-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 160 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6550 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.75W (Ta), 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP85N10-10-E3 FAQ

1.How can I place an order for SUP85N10-10-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP85N10-10-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP85N10-10-E3 reliable?

The price and inventory of SUP85N10-10-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP85N10-10-E3 is usually 5 days.

3.What payment methods are accepted for SUP85N10-10-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP85N10-10-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP85N10-10-E3?

SUP85N10-10-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP85N10-10-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP85N10-10-E3?

For technical support, including SUP85N10-10-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP85N10-10-E3 requirements.

6.How does Aetrix verify that SUP85N10-10-E3 is sourced from the original manufacturer or authorized distributors?

All SUP85N10-10-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP85N10-10-E3 meets industry standards.

7.What is the process for return or replacement of SUP85N10-10-E3?

All SUP85N10-10-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP85N10-10-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP85N10-10-E3 part is unused and in its original packaging.

Return procedure for SUP85N10-10-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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