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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP85N10-10-GE3

Name: SUP85N10-10-GE3
Brand: Vishay Siliconix
SKU: SUP85N10-10-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP85N10-10-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP85N10-10-GE3.pdf

Description:: MOSFET N-CH 100V 85A TO220AB

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Product details

Overview

SUP85N10-10-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 100 V drain-source voltage, 85 A continuous drain current at TC = 25 °C, and 0.0105 Ω typical rDS(on) at VGS = 10 V. It operates up to 175 °C junction temperature and features a TO-220AB package with drain-connected tab, suited for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the SUP85N10-10-GE3 datasheet, SUP85N10-10-GE3 pinout, SUP85N10-10-GE3 application, or SUP85N10-10-GE3 equivalent, key selection criteria include its 100 V V(BR)DSS rating, low 0.0105 Ω on-resistance at 10 V gate drive, 250 W maximum power dissipation, and 175 °C thermal capability-critical for industrial power switching and automotive under-hood designs.

Technical Context

This MOSFET uses Vishay's TrenchFET® process to achieve low conduction losses and robust avalanche performance. Its 0.0105 Ω rDS(on) at VGS = 10 V and 30 A enables high-efficiency operation in synchronous rectification and high-side switching topologies.

The device supports pulsed drain currents up to 240 A and single-pulse avalanche energy of 280 mJ, with guaranteed 100 V breakdown voltage and 1–3 V gate threshold. Thermal resistance from junction-to-case is 0.6 °C/W, enabling effective heatsinking in compact power modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	100 V - Withstands up to 100 V drain-source voltage before breakdown, suitable for 48 V bus and 100 V DC link applications.
rDS(on)	0.0105 Ω @ VGS = 10 V, ID = 30 A - Enables <1.0 W conduction loss at 30 A, reducing thermal load in high-current switches.
ID (continuous)	85 A @ TC = 25 °C - Package-limited current capacity; requires adequate heatsinking for sustained operation.
TJ max	175 °C - Supports operation in harsh environments such as engine control units and industrial motor drives.
RthJC	0.6 °C/W - Low junction-to-case thermal resistance allows efficient heat transfer to external heatsink via drain-connected tab.
Qg	105–160 nC - Total gate charge impacts switching speed and driver sizing; compatible with standard 10 V gate drivers.
EAS	280 mJ - Single-pulse avalanche energy rating ensures ruggedness against inductive switching transients.

Pinout & Package

Package: TO-220AB, through-hole, drain-connected tab. Mounting requires electrical isolation of the tab unless drain is referenced to chassis ground.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; accepts 0–20 V gate-source voltage; threshold 1–3 V enables TTL/CMOS-compatible drive.
D	Drain	Main high-side current path; internally connected to metal tab for low-inductance, high-current routing and thermal conduction.
S	Source	Reference node for gate drive and current return; defines common potential for gate control circuitry.

Key Features

Feature	Design Value
TrenchFET® technology	Delivers optimized cell density and low rDS(on), improving power density and efficiency over planar MOSFETs.
175 °C maximum junction temperature	Enables reliable operation in high-ambient environments without derating, supporting under-hood and industrial enclosure use.
Drain-connected tab	Provides low-thermal-resistance path to heatsink and reduces parasitic inductance in high-di/dt switching paths.
280 mJ single-pulse avalanche energy	Ensures robustness during unclamped inductive switching events, eliminating need for external snubbers in many designs.
RoHS-compliant lead-free termination (GE3 suffix)	Meets global environmental compliance requirements without sacrificing solderability or thermal performance.

Applications

Motor Drive Half-Bridge	High-Current DC-DC Converter
Use Scenario: High-power BLDC motor control in industrial automation systems requiring bidirectional current handling and fast PWM switching. IC Role / Device Role / Timing Role: Power switch in high-side leg of half-bridge topology; handles 85 A continuous phase current with minimal conduction loss. Use Value: 0.0105 Ω rDS(on) reduces I²R losses by >30% vs. comparable 100 V MOSFETs, lowering heatsink size and system cost.	Use Scenario: Primary-side synchronous rectifier in isolated 48 V–12 V buck-derived DC-DC converter for telecom power shelves. IC Role / Device Role / Timing Role: Main switching element operating at 100–200 kHz with 10 V gate drive; leverages low Qg for efficient hard-switching. Use Value: 105–160 nC total gate charge enables use of low-cost gate drivers while maintaining <100 ns turn-off delay.
Automotive Engine Control Unit	Industrial Solenoid Driver
Use Scenario: High-side load switch for fuel injector or ignition coil drivers in engine management systems exposed to under-hood temperatures up to 150 °C ambient. IC Role / Device Role / Timing Role: Rugged switching device with 175 °C TJ rating and 280 mJ avalanche capability to withstand inductive kickback. Use Value: Guaranteed 100 V V(BR)DSS and 240 A pulsed current support safe operation during cold-crank and load-dump transients.	Use Scenario: High-reliability solenoid actuation in factory automation valves requiring 85 A peak current pulses at 10 Hz duty cycle. IC Role / Device Role / Timing Role: Low-loss, thermally stable switch delivering precise current pulses with minimal thermal drift over extended cycles. Use Value: 0.6 °C/W RthJC and 175 °C TJ rating ensure stable on-resistance across 10,000+ actuation cycles without thermal runaway.

Motor Drive Half-Bridge

High-Current DC-DC Converter

Use Scenario: High-power BLDC motor control in industrial automation systems requiring bidirectional current handling and fast PWM switching.

IC Role / Device Role / Timing Role: Power switch in high-side leg of half-bridge topology; handles 85 A continuous phase current with minimal conduction loss.

Use Value: 0.0105 Ω rDS(on) reduces I²R losses by >30% vs. comparable 100 V MOSFETs, lowering heatsink size and system cost.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V–12 V buck-derived DC-DC converter for telecom power shelves.

IC Role / Device Role / Timing Role: Main switching element operating at 100–200 kHz with 10 V gate drive; leverages low Qg for efficient hard-switching.

Use Value: 105–160 nC total gate charge enables use of low-cost gate drivers while maintaining <100 ns turn-off delay.

Automotive Engine Control Unit

Industrial Solenoid Driver

Use Scenario: High-side load switch for fuel injector or ignition coil drivers in engine management systems exposed to under-hood temperatures up to 150 °C ambient.

IC Role / Device Role / Timing Role: Rugged switching device with 175 °C TJ rating and 280 mJ avalanche capability to withstand inductive kickback.

Use Value: Guaranteed 100 V V(BR)DSS and 240 A pulsed current support safe operation during cold-crank and load-dump transients.

Use Scenario: High-reliability solenoid actuation in factory automation valves requiring 85 A peak current pulses at 10 Hz duty cycle.

IC Role / Device Role / Timing Role: Low-loss, thermally stable switch delivering precise current pulses with minimal thermal drift over extended cycles.

Use Value: 0.6 °C/W RthJC and 175 °C TJ rating ensure stable on-resistance across 10,000+ actuation cycles without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP85NF10	100 V V(BR)DSS, 0.012 Ω rDS(on) @ 10 V, TO-220 package, but higher 0.65 °C/W RthJC and no GE3 RoHS suffix.	Lacks 175 °C TJ rating (max 150 °C); lower avalanche energy (220 mJ) limits ruggedness in inductive loads.	Acceptable where ambient temperature stays below 125 °C and avalanche stress is minimal; verify thermal margin with higher RthJC.
IRF540NPBF	100 V V(BR)DSS, 0.044 Ω rDS(on) @ 10 V, TO-220, 175 °C TJ, but significantly higher conduction loss and lower ID (36 A).	Not suitable for 85 A continuous applications; usable only in lower-current, cost-sensitive replacements with relaxed efficiency targets.	Only consider if board space and thermal design allow doubling parallel devices; avoid in high-efficiency or high-density layouts.

Compared with STP85NF10 and IRF540NPBF, SUP85N10-10-GE3 delivers superior thermal performance (0.6 °C/W vs. ≥0.65), lower conduction loss (0.0105 Ω), and full 175 °C/280 mJ ruggedness-making it the preferred choice for high-reliability, high-current industrial and automotive switching.

Availability

SUP85N10-10-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, automotive engine control units, and high-current DC-DC converters requiring stable component supply and long-term manufacturing continuity.

Supply support for SUP85N10-10-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and thermal performance.

The SUP85N10-10-GE3 belongs to Vishay's TrenchFET® Gen III power MOSFET family, engineered for high-current, high-temperature switching in automotive, industrial, and computing power systems.

FAQ

What is the maximum continuous drain current for SUP85N10-10-GE3 at 125 °C case temperature?

The SUP85N10-10-GE3 supports 60 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied when heatsink temperature exceeds 25 °C. Designers should verify junction temperature using RthJC = 0.6 °C/W and actual power dissipation to ensure operation remains within the 175 °C maximum TJ limit.

Is SUP85N10-10-GE3 pin-compatible with older versions like SUP85N10-10?

Yes, SUP85N10-10-GE3 is mechanically and electrically identical to SUP85N10-10 in TO-220AB package, differing only in RoHS-compliant lead-free (GE3) termination versus tin/lead plating. Pinout, thermal characteristics, and all electrical parameters-including 0.0105 Ω rDS(on) and 100 V V(BR)DSS-are unchanged. No PCB or layout modifications are required for replacement.

Does SUP85N10-10-GE3 include an integrated body diode, and what are its key ratings?

Yes, SUP85N10-10-GE3 integrates a source-drain body diode rated for 85 A continuous forward current and 240 A pulsed current. Its forward voltage is 1.0–1.5 V at IF = 85 A and VGS = 0 V, with reverse recovery time of 85–140 ns and Qrr of 0.17–0.35 μC. These values support moderate-frequency freewheeling in non-synchronous topologies but are not optimized for ultra-fast recovery.

What gate drive voltage is recommended for optimal performance of SUP85N10-10-GE3?

A 10 V gate drive is recommended for SUP85N10-10-GE3 to achieve its specified 0.0105 Ω rDS(on) at 30 A. While it conducts with VGS as low as 1 V (threshold), full enhancement requires ≥4.5 V (rDS(on) = 0.012 Ω). Driving above 10 V yields diminishing returns and risks exceeding ±20 V VGS absolute maximum; 10 V provides best balance of low on-resistance and gate driver compatibility.

How does the avalanche rating of SUP85N10-10-GE3 impact circuit protection design?

The SUP85N10-10-GE3 is rated for 280 mJ single-pulse avalanche energy, allowing it to safely absorb inductive energy during unclamped switching events-such as MOSFET turn-off with inductive loads-without external snubbers. This ruggedness simplifies protection design in motor drives and solenoid controllers, though repetitive avalanche is not guaranteed and must be avoided per datasheet guidance.

SUP85N10-10-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 160 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6550 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.75W (Ta), 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: -

SUP85N10-10-GE3 FAQ

1.How can I place an order for SUP85N10-10-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP85N10-10-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP85N10-10-GE3 reliable?

The price and inventory of SUP85N10-10-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP85N10-10-GE3 is usually 5 days.

3.What payment methods are accepted for SUP85N10-10-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP85N10-10-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP85N10-10-GE3?

SUP85N10-10-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP85N10-10-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP85N10-10-GE3?

For technical support, including SUP85N10-10-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP85N10-10-GE3 requirements.

6.How does Aetrix verify that SUP85N10-10-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP85N10-10-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP85N10-10-GE3 meets industry standards.

7.What is the process for return or replacement of SUP85N10-10-GE3?

All SUP85N10-10-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP85N10-10-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP85N10-10-GE3 part is unused and in its original packaging.

Return procedure for SUP85N10-10-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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