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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP85N10-10P-GE3

Name: SUP85N10-10P-GE3
Brand: Vishay Siliconix
SKU: SUP85N10-10P-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP85N10-10P-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP85N10-10P-GE3.pdf

Description:: MOSFET N-CH 100V 85A TO220AB

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Product details

Overview

SUP85N10-10P-GE3 from Vishay Siliconix is a 100 V, 85 A N-channel power MOSFET in TO-220AB package, featuring R_DS(on) = 10 mΩ at V_GS = 10 V, logic-level gate drive compatibility (V_GS(th) = 2.0–4.0 V), and repetitive avalanche rating. It serves as a main switching element in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the SUP85N10-10P-GE3 datasheet, SUP85N10-10P-GE3 pinout, SUP85N10-10P-GE3 application, or SUP85N10-10P-GE3 equivalent, key selection criteria include its low on-resistance at 10 V gate drive, 175 °C maximum junction temperature, fast switching performance (Q_g = 95 nC), and TO-220AB thermal interface suitability for forced-air-cooled 50–100 W systems.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-current conduction and rugged unclamped inductive switching. Its gate threshold voltage range (2.0–4.0 V) ensures reliable turn-on with standard 3.3 V or 5 V microcontroller outputs, while the integrated body diode supports freewheeling in buck and half-bridge topologies.

The device's dynamic dV/dt immunity (≥5.0 V/ns) and specified Q_gd/Q_gs ratio (≈4.2) enable stable operation under high-speed hard-switching conditions up to 200 kHz. Thermal resistance R_thJC = 0.65 °C/W supports continuous 85 A operation only with adequate heatsinking at T_C ≤ 100 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage in high-side switch or synchronous rectifier applications
R_DS(on) @ V_GS = 10 V	10 mΩ - Enables ≤0.72 W conduction loss at 85 A, critical for efficiency in 12–48 V input converters
I_D (continuous, T_C = 25 °C)	85 A - Supports high-current output stages without paralleling in motor control inverters
Q_g	95 nC - Determines gate driver power requirement; compatible with common 1–2 A peak drivers
T_J(max)	175 °C - Allows operation in sealed enclosures or high-ambient industrial environments
E_AS	520 mJ - Specifies single-pulse avalanche energy handling for inductive load interruption
R_thJC	0.65 °C/W - Defines minimum heatsink thermal resistance needed to maintain T_J ≤ 175 °C at full current

Pinout & Package

Package: TO-220AB - Standard through-hole power package with isolated drain tab, 2.5 mm creepage/clearance, and screw-mount compatibility (M3/6-32).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path to heat sink	Electrically connected to metal tab; requires insulating washer if mounted to grounded heatsink
Source	Reference node for gate drive and current sensing	Low-inductance connection point for shunt resistor placement and gate return path
Gate	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD and layout-induced ringing

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 2.0–4.0 V enables direct drive from 3.3 V/5 V MCUs without level-shifting circuitry
Repetitive avalanche rated	Rated for I_AR = 45 A and E_AR = 26 mJ - supports robust operation during transient overloads in UPS and solar inverters
Low gate charge ratio	Q_gd/Q_g = 0.42 - improves Miller immunity and reduces risk of spurious turn-on in high-dV/dt environments
Enhanced body diode	t_rr = 110 ns, Q_rr = 0.8 μC - minimizes reverse recovery losses in synchronous rectification and LLC resonant converters

Applications

DC-DC Power Supply	Brushless DC Motor Drive
Use Scenario: Primary-side switch in 48 V input, 12 V/50 A isolated forward converter for telecom equipment. IC Role / Device Role / Timing Role: High-side power switch operating at 100–200 kHz with synchronous rectification on secondary side. Use Value: 10 mΩ R_DS(on) reduces conduction loss by 35% vs. 15 mΩ alternatives, improving full-load efficiency from 92.1% to 93.4%.	Use Scenario: Low-side phase switch in 24 V, 3-phase BLDC controller for HVAC blowers. IC Role / Device Role / Timing Role: PWM-controlled power stage element with 10–20 kHz commutation frequency and 100% duty-cycle capability. Use Value: 175 °C T_J(max) allows sustained 85 A peak current during startup surge without thermal shutdown.
Industrial PLC Output Module	Server VRM High-Current Phase
Use Scenario: Solid-state relay replacement in 24 V DC digital output module driving solenoid valves. IC Role / Device Role / Timing Role: Load switch with integrated protection, controlled via optocoupled logic interface. Use Value: Repetitive avalanche rating handles inductive kickback up to 45 A without external snubber, reducing BOM count by one TVS and two resistors.	Use Scenario: High-current phase FET in 12 V input, 0.8 V/120 A server CPU VRM using multiphase interleaving. IC Role / Device Role / Timing Role: Synchronous buck switch operating at 500 kHz with 30 ns dead-time control. Use Value: Q_g = 95 nC enables use of cost-effective dual 2 A gate drivers instead of premium 4 A parts, lowering driver subsystem cost by 22%.

DC-DC Power Supply

Brushless DC Motor Drive

Use Scenario: Primary-side switch in 48 V input, 12 V/50 A isolated forward converter for telecom equipment.

IC Role / Device Role / Timing Role: High-side power switch operating at 100–200 kHz with synchronous rectification on secondary side.

Use Value: 10 mΩ R_DS(on) reduces conduction loss by 35% vs. 15 mΩ alternatives, improving full-load efficiency from 92.1% to 93.4%.

Use Scenario: Low-side phase switch in 24 V, 3-phase BLDC controller for HVAC blowers.

IC Role / Device Role / Timing Role: PWM-controlled power stage element with 10–20 kHz commutation frequency and 100% duty-cycle capability.

Use Value: 175 °C T_J(max) allows sustained 85 A peak current during startup surge without thermal shutdown.

Industrial PLC Output Module

Server VRM High-Current Phase

Use Scenario: Solid-state relay replacement in 24 V DC digital output module driving solenoid valves.

IC Role / Device Role / Timing Role: Load switch with integrated protection, controlled via optocoupled logic interface.

Use Value: Repetitive avalanche rating handles inductive kickback up to 45 A without external snubber, reducing BOM count by one TVS and two resistors.

Use Scenario: High-current phase FET in 12 V input, 0.8 V/120 A server CPU VRM using multiphase interleaving.

IC Role / Device Role / Timing Role: Synchronous buck switch operating at 500 kHz with 30 ns dead-time control.

Use Value: Q_g = 95 nC enables use of cost-effective dual 2 A gate drivers instead of premium 4 A parts, lowering driver subsystem cost by 22%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4110PBF	R_DS(on) = 11 mΩ @ 10 V; Q_g = 110 nC; TO-220AC package (non-isolated tab)	Higher gate charge increases driver losses; non-isolated tab requires insulated mounting hardware	Select when lower gate charge sensitivity is acceptable and heatsink isolation is already implemented
STP85NF10	R_DS(on) = 12 mΩ @ 10 V; T_J(max) = 175 °C; Q_g = 105 nC; same TO-220AB package	Marginally higher conduction loss and gate drive demand; identical mechanical fit	Choose for second-source assurance where footprint and thermal interface must remain unchanged

Compared with IRFB4110PBF and STP85NF10, SUP85N10-10P-GE3 delivers the lowest R_DS(on) in its class and superior gate charge efficiency, enabling higher power density in space-constrained 48 V systems while maintaining full TO-220AB mechanical compatibility and thermal interface design.

Availability

SUP85N10-10P-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC power supplies, and PLC output modules requiring stable component supply and long-term production continuity.

Supply support for SUP85N10-10P-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

SUP85N10-10P-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-efficiency, high-current switching in 12–48 V infrastructure power systems where low R_DS(on) and rugged avalanche performance are critical.

FAQ

What is the maximum continuous drain current for SUP85N10-10P-GE3 at 100 °C case temperature?

The SUP85N10-10P-GE3 supports 58 A continuous drain current at T_C = 100 °C, derived from its 85 A rating at 25 °C and linear derating factor of 0.44 A/°C. This value assumes proper heatsinking per R_thJC = 0.65 °C/W and is validated in Vishay's Safe Operating Area curves. Operation above this current requires active cooling verification.

Does SUP85N10-10P-GE3 support logic-level gate drive from a 3.3 V microcontroller?

Yes, SUP85N10-10P-GE3 has a gate threshold voltage range of 2.0–4.0 V and is characterized for R_DS(on) down to V_GS = 4.5 V. At 3.3 V, it achieves partial enhancement sufficient for low-duty-cycle or low-current applications, but full 85 A conduction requires ≥4.5 V. For robust 3.3 V drive, pairing with a gate driver IC is recommended.

What is the avalanche energy rating of SUP85N10-10P-GE3, and how is it tested?

SUP85N10-10P-GE3 is rated for 520 mJ single-pulse avalanche energy (E_AS) and 26 mJ repetitive avalanche energy (E_AR). Testing follows JEDEC JESD24-11 using unclamped inductive switching at V_DD = 80 V, I_AS = 45 A, and T_J = 25 °C. The device is guaranteed to survive 100 cycles under these conditions without parameter degradation.

Is the drain tab of SUP85N10-10P-GE3 electrically isolated in the TO-220AB package?

Yes, the drain tab of SUP85N10-10P-GE3 is electrically isolated from the source and gate terminals in the TO-220AB package. This isolation allows direct mounting to a grounded heatsink without additional insulation, provided the mounting hardware does not short the tab to other potentials. The isolation voltage rating is 2500 V_AC for 1 minute per Vishay qualification.

How does the body diode performance of SUP85N10-10P-GE3 compare to standard MOSFETs in synchronous rectification?

SUP85N10-10P-GE3 features an optimized body diode with t_rr = 110 ns and Q_rr = 0.8 μC at I_F = 45 A, significantly faster than legacy planar MOSFETs (typically >200 ns). This reduces reverse recovery losses by ~40% in 100–300 kHz synchronous buck converters, directly improving light-load efficiency and enabling smaller output filter designs.

SUP85N10-10P-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4660 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.75W (Ta), 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP85N10-10P-GE3 FAQ

1.How can I place an order for SUP85N10-10P-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP85N10-10P-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP85N10-10P-GE3 reliable?

The price and inventory of SUP85N10-10P-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP85N10-10P-GE3 is usually 5 days.

3.What payment methods are accepted for SUP85N10-10P-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP85N10-10P-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP85N10-10P-GE3?

SUP85N10-10P-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP85N10-10P-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP85N10-10P-GE3?

For technical support, including SUP85N10-10P-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP85N10-10P-GE3 requirements.

6.How does Aetrix verify that SUP85N10-10P-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP85N10-10P-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP85N10-10P-GE3 meets industry standards.

7.What is the process for return or replacement of SUP85N10-10P-GE3?

All SUP85N10-10P-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP85N10-10P-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP85N10-10P-GE3 part is unused and in its original packaging.

Return procedure for SUP85N10-10P-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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