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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP85N15-21-E3

Name: SUP85N15-21-E3
Brand: Vishay Siliconix
SKU: SUP85N15-21-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP85N15-21-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP85N15-21-E3.pdf

Description:: MOSFET N-CH 150V 85A TO220AB

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Product details

Overview

SUP85N15-21-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 150 V (V_DS), 85 A continuous drain current at T_C = 25 °C, and 0.021 Ω r_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature and features drain-connected tab in TO-220AB package, designed for primary-side switching in high-efficiency SMPS.

For engineers reviewing the SUP85N15-21-E3 datasheet, SUP85N15-21-E3 pinout, SUP85N15-21-E3 application, or SUP85N15-21-E3 equivalent, key selection criteria include its 150 V breakdown voltage, low on-resistance at elevated temperature, avalanche energy rating of 125 mJ, thermal resistance R_thJC = 0.4 °C/W, and RoHS-compliant lead-free termination.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for high-voltage, high-current switching with minimized conduction and switching losses. Its gate charge profile (Q_g = 76–110 nC, Q_gd = 26 nC) supports fast turn-on/turn-off in hard-switched topologies, while the integrated body diode exhibits t_rr = 130–200 ns and Q_rr = 0.52–1.2 µC under defined conditions.

The device is characterized across temperature (–55 to +175 °C) with guaranteed r_DS(on) up to 175 °C and V_(BR)DSS stability over junction temperature. Safe Operating Area (SOA) curves define pulse limits up to 180 A, and avalanche ruggedness is validated per single-pulse EAS = 125 mJ with L = 0.1 mH.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Withstands up to 150 V drain-source potential without breakdown, suitable for 120 VAC input-derived bus rails.
r_DS(on)	0.021 Ω @ V_GS = 10 V, I_D = 30 A - Enables <1.8 W conduction loss at 85 A when derated for temperature.
I_D (continuous)	85 A @ T_C = 25 °C - Supports high-current primary-side switching in industrial and telecom power supplies.
E_AS	125 mJ - Absorbs inductive energy during unclamped inductive switching, enhancing system robustness.
R_thJC	0.4 °C/W - Enables efficient heat transfer from junction to heatsink-mounted case, critical for thermal management.
Q_g	76–110 nC - Determines gate drive power requirement and switching speed in PWM controllers.
t_rr	130–200 ns - Limits reverse recovery losses and EMI generation when used in synchronous rectification or freewheeling paths.

Pinout & Package

Package: TO-220AB, with drain internally connected to the metal tab for direct heatsinking. Mounting requires electrically isolated hardware if tab is not tied to circuit ground or drain node.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level signal to fully enhance channel; threshold V_GS(th) = 2–4 V ensures reliable turn-on with standard drivers.
D (Drain)	High-side power terminal	Connected to metal tab; carries full load current and must be thermally coupled to heatsink; electrically referenced to output rail or bus.
S (Source)	Reference/return terminal	Serves as common return path for gate drive and load current; defines local ground reference for driver ICs and feedback circuits.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lower r_DS(on) per die area vs. planar MOSFETs, enabling higher current density and reduced PCB footprint.
175 °C maximum junction temperature	Supports operation in high-ambient environments (e.g., enclosed telecom chassis) without derating below 85 A at case temperature ≤ 25 °C.
Drain-connected tab	Provides low-thermal-resistance path (R_thJC = 0.4 °C/W) to external heatsink, eliminating need for separate thermal pad or interface material in many designs.
125 mJ single-pulse avalanche energy	Enables reliable operation under transient overvoltage or inductive kickback without external snubbers in flyback or forward converters.
RoHS-compliant lead-free termination	Meets EU Directive 2011/65/EU with Pb-free terminations (E3 suffix), supporting environmentally compliant manufacturing and end-of-life handling.

Applications

Server PSU Primary Switch	Industrial AC-DC Converter
Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating from 90–264 VAC input with 48 V/50 A output. IC Role / Device Role / Timing Role: Primary-side switching transistor in active-clamp forward or LLC resonant topology, switching at 100–300 kHz. Use Value: Low r_DS(on) and high E_AS reduce conduction loss and improve fault tolerance during line surges or startup transients.	Use Scenario: 1 kW industrial AC-DC front-end supplying 24 V DC to PLC I/O modules in factory automation cabinets. IC Role / Device Role / Timing Role: Main switch in asymmetric half-bridge configuration, handling 150 V bus with 85 A peak current pulses. Use Value: 175 °C rating allows sustained operation at 70 °C ambient without airflow, reducing cooling subsystem cost and complexity.
Telecom Rectifier Module	EV Charger Auxiliary Power Supply
Use Scenario: -48 V telecom rectifier module converting 230 VAC to -48 V/60 A for central office equipment. IC Role / Device Role / Timing Role: Primary-side MOSFET in phase-shifted full-bridge topology, operating at 150–200 kHz with ZVS. Use Value: Fast Q_gd/Q_g ratio and low C_oss support zero-voltage switching, minimizing switching loss and improving efficiency above 95 %.	Use Scenario: 300 W auxiliary power supply inside 22 kW EV on-board charger, powering MCU, gate drivers, and sensors. IC Role / Device Role / Timing Role: Primary switch in flyback converter fed from 400 V DC link derived from PFC stage. Use Value: Avalanche ruggedness eliminates need for external clamping diodes, simplifying BOM and improving reliability under no-load or short-circuit faults.

Server PSU Primary Switch

Industrial AC-DC Converter

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating from 90–264 VAC input with 48 V/50 A output.

IC Role / Device Role / Timing Role: Primary-side switching transistor in active-clamp forward or LLC resonant topology, switching at 100–300 kHz.

Use Value: Low r_DS(on) and high E_AS reduce conduction loss and improve fault tolerance during line surges or startup transients.

Use Scenario: 1 kW industrial AC-DC front-end supplying 24 V DC to PLC I/O modules in factory automation cabinets.

IC Role / Device Role / Timing Role: Main switch in asymmetric half-bridge configuration, handling 150 V bus with 85 A peak current pulses.

Use Value: 175 °C rating allows sustained operation at 70 °C ambient without airflow, reducing cooling subsystem cost and complexity.

Telecom Rectifier Module

EV Charger Auxiliary Power Supply

Use Scenario: -48 V telecom rectifier module converting 230 VAC to -48 V/60 A for central office equipment.

IC Role / Device Role / Timing Role: Primary-side MOSFET in phase-shifted full-bridge topology, operating at 150–200 kHz with ZVS.

Use Value: Fast Q_gd/Q_g ratio and low C_oss support zero-voltage switching, minimizing switching loss and improving efficiency above 95 %.

Use Scenario: 300 W auxiliary power supply inside 22 kW EV on-board charger, powering MCU, gate drivers, and sensors.

IC Role / Device Role / Timing Role: Primary switch in flyback converter fed from 400 V DC link derived from PFC stage.

Use Value: Avalanche ruggedness eliminates need for external clamping diodes, simplifying BOM and improving reliability under no-load or short-circuit faults.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP85NF15	Same V_DS = 150 V, r_DS(on) = 0.022 Ω, but R_thJC = 0.55 °C/W and E_AS = 100 mJ.	Limited thermal performance in high-power-density layouts; lower avalanche margin may require snubber in high-inductance circuits.	Prefer SUP85N15-21-E3 where thermal headroom or unclamped inductive switching is critical.
IRFP4668PBF	V_DS = 150 V, r_DS(on) = 0.019 Ω, but rated only to 150 °C TJ and Q_g = 135 nC - higher drive loss.	Not rated for 175 °C operation; unsuitable for sealed enclosures or high-ambient industrial use without significant derating.	Select SUP85N15-21-E3 for extended temperature range and lower gate charge in high-frequency designs.

Compared with STP85NF15 and IRFP4668PBF, the SUP85N15-21-E3 offers superior thermal resistance (0.4 °C/W), higher junction temperature rating (175 °C), and greater avalanche energy (125 mJ), making it optimal for compact, high-reliability, high-ambient power conversion where thermal and transient robustness are prioritized.

Availability

SUP85N15-21-E3 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC converters, and telecom rectifier modules requiring stable component supply and long-term manufacturability.

Supply support for SUP85N15-21-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The SUP85N15-21-E3 belongs to Vishay's TrenchFET® Gen II high-voltage power MOSFET family, engineered for primary-side switching in high-efficiency, high-reliability offline power conversion systems.

FAQ

What is the maximum continuous drain current rating for SUP85N15-21-E3 at 125 °C case temperature?

The SUP85N15-21-E3 supports 50 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects increased r_DS(on) and thermal constraints at elevated temperatures, and must be applied in thermal design calculations alongside R_thJC = 0.4 °C/W and ambient conditions.

Does SUP85N15-21-E3 have a built-in body diode, and what are its key parameters?

Yes, the SUP85N15-21-E3 integrates a source-drain body diode rated for 85 A continuous and 180 A pulsed current. Its forward voltage is 1.0–1.5 V at I_F = 85 A and V_GS = 0 V, with reverse recovery time t_rr = 130–200 ns and Q_rr = 0.52–1.2 µC under specified test conditions (I_F = 50 A, di/dt = 100 A/µs).

Is SUP85N15-21-E3 suitable for use in zero-voltage switching (ZVS) topologies?

Yes, the SUP85N15-21-E3 supports ZVS operation due to its low C_oss = 530 pF and favorable Q_gd/Q_g ratio (26/76–110 nC). These characteristics reduce switching loss and enable soft switching in phase-shifted full-bridge or LLC resonant converters operating up to 300 kHz, provided gate drive strength and layout minimize parasitic inductance.

What is the gate threshold voltage range for SUP85N15-21-E3, and how does it affect drive requirements?

The gate threshold voltage V_GS(th) for SUP85N15-21-E3 is 2–4 V at I_D = 250 µA. This range ensures compatibility with standard 10 V gate drivers while providing noise immunity against false turn-on. Full enhancement requires ≥10 V V_GS to achieve rated r_DS(on), and drive circuits must supply sufficient peak current to charge Q_g = 76–110 nC within desired switching times.

How does the avalanche rating of SUP85N15-21-E3 impact system-level reliability?

The SUP85N15-21-E3 is rated for 125 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH. This specification validates its ability to safely absorb inductive energy during abnormal events like transformer saturation or output short circuits, reducing dependency on external protection components and improving field reliability in mission-critical power systems.

SUP85N15-21-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 21mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4750 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.4W (Ta), 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP85N15-21-E3 FAQ

1.How can I place an order for SUP85N15-21-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP85N15-21-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP85N15-21-E3 reliable?

The price and inventory of SUP85N15-21-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP85N15-21-E3 is usually 5 days.

3.What payment methods are accepted for SUP85N15-21-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP85N15-21-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP85N15-21-E3?

SUP85N15-21-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP85N15-21-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP85N15-21-E3?

For technical support, including SUP85N15-21-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP85N15-21-E3 requirements.

6.How does Aetrix verify that SUP85N15-21-E3 is sourced from the original manufacturer or authorized distributors?

All SUP85N15-21-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP85N15-21-E3 meets industry standards.

7.What is the process for return or replacement of SUP85N15-21-E3?

All SUP85N15-21-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP85N15-21-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP85N15-21-E3 part is unused and in its original packaging.

Return procedure for SUP85N15-21-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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