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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP90100E-GE3

Name: SUP90100E-GE3
Brand: Vishay Siliconix
SKU: SUP90100E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP90100E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP90100E-GE3.pdf

Description:: N-CHANNEL 200 V (D-S) MOSFET TO-

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Product details

Overview

SUP90100E-GE3 from Vishay Siliconix is an N-channel 200 V, 150 A (T_C = 25 °C), TO-220AB packaged power MOSFET with R_DS(on) of 0.0109 Ω at V_GS = 10 V and Q_g of 72.8 nC (typ). It delivers high-current switching in DC/DC converters and motor drive circuits where low conduction loss and robust avalanche capability are required.

For engineers reviewing the SUP90100E-GE3 datasheet, SUP90100E-GE3 pinout, SUP90100E-GE3 application, or SUP90100E-GE3 equivalent, key selection criteria include its 200 V V_DS, 175 °C max junction temperature, 245 mJ single-pulse avalanche energy, and verified 100 % R_g and UIS testing - critical for industrial power switching reliability.

Technical Context

This TrenchFET® MOSFET uses advanced silicon process technology to achieve ultra-low R_DS(on) while maintaining high voltage blocking and fast switching dynamics. Its low Q_gd (19.0 nC typ) minimizes Miller plateau time, reducing switching losses during hard-switching transitions in high-frequency power supplies.

The device features a fully rated body diode with t_rr = 118 ns (typ) and Q_rr = 0.632 μC (typ), enabling efficient synchronous rectification and OR-ing applications. Thermal design is supported by R_thJC = 0.4 °C/W and R_thJA = 40 °C/W (PCB mount), allowing high-power operation with standard heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports primary-side switching in 48 V–110 V DC bus systems and 200 V AC line-derived supplies
R_DS(on) max @ V_GS = 10 V	0.0109 Ω - enables ≤1.7 W conduction loss at 13 A continuous drain current
I_D continuous @ T_C = 25 °C	150 A - suitable for high-current motor drive half-bridges and battery e-fuse protection
Q_g typ	72.8 nC - determines gate drive power requirement; compatible with common 1–2 A peak gate drivers
E_AS	245 mJ - withstands repetitive inductive turn-off stress in DC/AC inverters without snubber
T_J max	175 °C - allows operation in sealed enclosures or high-ambient environments up to 125 °C ambient
R_thJC	0.4 °C/W - enables >300 W dissipation with modest heatsink (ΔT = 120 °C)

Pinout & Package

Supplied in TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, and heatsink-compatible outline per Vishay document 71195. Dimensions: 15.17 mm × 10.28 mm × 4.45 mm (L × E × A), with 3.74 mm Ø mounting hole.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; requires insulating pad when mounted to grounded heatsink
Source	Reference node for gate control and current return	Low-inductance connection point for sense resistor placement and gate driver ground reference
Gate	Control terminal for channel modulation	High-impedance input requiring <250 nA leakage handling; sensitive to ESD and ringing

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 25 % lower R_DS(on) vs. planar MOSFETs at same die size, improving power density in space-constrained converters
100 % R_g tested	Ensures consistent gate drive timing and eliminates batch-to-batch variation in switching speed and loss
100 % UIS tested	Guarantees minimum 245 mJ avalanche energy performance - no derating needed for inductive load switching
Very low Q_gd	Reduces Miller-induced shoot-through risk in half-bridge configurations and improves dV/dt immunity
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc. 99912

Applications

Switching Power Supply	Motor Drive Switch
Use Scenario: Primary-side switch in 1–3 kW telecom and server PSUs operating at 100–500 kHz. IC Role / Device Role / Timing Role: High-current, high-voltage power switch controlling energy transfer into transformer primary. Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, enabling >95 % efficiency at full load.	Use Scenario: Half-bridge leg in cordless power tool battery-driven BLDC motor controllers (18–60 V nominal). IC Role / Device Role / Timing Role: High-side or low-side switching element delivering 150 A peak phase current. Use Value: 175 °C T_J rating and robust UIS performance ensure reliability under stall and overload conditions.
DC/AC Inverter	OR-ing / e-Fuse
Use Scenario: Output stage switch in 1–5 kVA solar microinverters converting 200–400 V DC to 230 V AC. IC Role / Device Role / Timing Role: Unidirectional power switch in H-bridge topology handling bidirectional current via body diode commutation. Use Value: Fast, soft-recovery body diode (t_rr = 118 ns) reduces reverse recovery loss and EMI during freewheeling.	Use Scenario: Back-to-back configuration in redundant 48 V telecom power distribution for hot-swap and fault isolation. IC Role / Device Role / Timing Role: Bidirectional current-blocking switch enabling seamless source switchover and overcurrent shutdown. Use Value: Low R_DS(on) minimizes insertion loss (<50 mW at 10 A), preserving system efficiency and thermal margin.

Switching Power Supply

Motor Drive Switch

Use Scenario: Primary-side switch in 1–3 kW telecom and server PSUs operating at 100–500 kHz.

IC Role / Device Role / Timing Role: High-current, high-voltage power switch controlling energy transfer into transformer primary.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, enabling >95 % efficiency at full load.

Use Scenario: Half-bridge leg in cordless power tool battery-driven BLDC motor controllers (18–60 V nominal).

IC Role / Device Role / Timing Role: High-side or low-side switching element delivering 150 A peak phase current.

Use Value: 175 °C T_J rating and robust UIS performance ensure reliability under stall and overload conditions.

DC/AC Inverter

OR-ing / e-Fuse

Use Scenario: Output stage switch in 1–5 kVA solar microinverters converting 200–400 V DC to 230 V AC.

IC Role / Device Role / Timing Role: Unidirectional power switch in H-bridge topology handling bidirectional current via body diode commutation.

Use Value: Fast, soft-recovery body diode (t_rr = 118 ns) reduces reverse recovery loss and EMI during freewheeling.

Use Scenario: Back-to-back configuration in redundant 48 V telecom power distribution for hot-swap and fault isolation.

IC Role / Device Role / Timing Role: Bidirectional current-blocking switch enabling seamless source switchover and overcurrent shutdown.

Use Value: Low R_DS(on) minimizes insertion loss (<50 mW at 10 A), preserving system efficiency and thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH150N20L2	200 V, 150 A, R_DS(on) = 0.011 Ω, Q_g = 95 nC, TO-247 package	Larger footprint, higher gate charge increases driver loss; better thermal spread due to TO-247	Preferred where PCB layout allows larger package and thermal performance outweighs gate drive overhead
STW150N20	200 V, 150 A, R_DS(on) = 0.012 Ω, Q_g = 68 nC, TO-247 package, no UIS rating specified	Lower Q_g but unverified avalanche ruggedness; not recommended for inductive switching without external clamping	Acceptable only in non-inductive or snubber-protected topologies where UIS is not mission-critical

Compared with IXTH150N20L2 and STW150N20, the SUP90100E-GE3 offers superior avalanche ruggedness (245 mJ verified), lower R_DS(on), and TO-220AB compatibility - making it optimal for cost-sensitive, space-constrained industrial inverters and motor drives requiring guaranteed inductive switching reliability.

Availability

SUP90100E-GE3 is available at Aetrix Electronics and suitable for switching power supply, motor drive, and battery management applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for SUP90100E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SUP90100E-GE3 belongs to Vishay's TrenchFET® Gen IV high-voltage power MOSFET family, engineered for high-efficiency, high-reliability switching in industrial power conversion and motor control systems.

FAQ

What is the maximum continuous drain current rating for SUP90100E-GE3 at 70 °C case temperature?

The SUP90100E-GE3 supports 150 A continuous drain current at T_C = 70 °C, matching its rating at 25 °C per Vishay's Absolute Maximum Ratings table. This reflects its robust thermal design and low R_DS(on), enabling sustained high-current operation without derating below 125 °C case temperature.

Does SUP90100E-GE3 have a specified reverse recovery time for its intrinsic body diode?

Yes, the SUP90100E-GE3 body diode has a typical reverse recovery time (t_rr) of 118 ns at I_F = 13 A and di/dt = 100 A/μs. This value is measured and specified in the datasheet, confirming suitability for synchronous rectification and freewheeling in hard-switched topologies.

Is SUP90100E-GE3 qualified for use in automotive applications?

No, SUP90100E-GE3 is not AEC-Q101 qualified. Vishay positions this part for industrial, computing, and consumer power applications. For automotive-grade alternatives, consult Vishay's AQ-series MOSFETs - SUP90100E-GE3 lacks automotive-specific qualification testing and documentation.

What is the gate threshold voltage range for SUP90100E-GE3?

The gate threshold voltage (V_GS(th)) for SUP90100E-GE3 is specified from 2 V to 4 V at V_DS = V_GS and I_D = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while maintaining noise immunity in noisy power environments.

How is thermal resistance defined for SUP90100E-GE3, and what does R_thJC = 0.4 °C/W mean in practice?

R_thJC = 0.4 °C/W means that for every watt dissipated at the die, the junction-to-case temperature rise is 0.4 °C - indicating highly efficient heat transfer from silicon to the TO-220AB tab. With a 120 °C ΔT budget (T_J = 175 °C, T_C = 55 °C), SUP90100E-GE3 can safely dissipate up to 300 W in well-heatsinked configurations.

SUP90100E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.9mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3930 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP90100E-GE3 FAQ

1.How can I place an order for SUP90100E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP90100E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP90100E-GE3 reliable?

The price and inventory of SUP90100E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP90100E-GE3 is usually 5 days.

3.What payment methods are accepted for SUP90100E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP90100E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP90100E-GE3?

SUP90100E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP90100E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP90100E-GE3?

For technical support, including SUP90100E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP90100E-GE3 requirements.

6.How does Aetrix verify that SUP90100E-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP90100E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP90100E-GE3 meets industry standards.

7.What is the process for return or replacement of SUP90100E-GE3?

All SUP90100E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP90100E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP90100E-GE3 part is unused and in its original packaging.

Return procedure for SUP90100E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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