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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP90142E-GE3

Name: SUP90142E-GE3
Brand: Vishay Siliconix
SKU: SUP90142E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP90142E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP90142E-GE3.pdf

Description:: MOSFET N-CH 200V 90A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SUP90142E-GE3 from Vishay Siliconix is an N-channel 200 V, 90 A power MOSFET in TO-220AB package, optimized for high-efficiency switch-mode power supplies and synchronous rectification with R_DS(on) = 0.0152 Ω @ V_GS = 10 V, Q_g = 58 nC, and 175 °C maximum junction temperature. It serves as a primary switching device in UPS, solar microinverters, and Class D audio amplifiers.

For engineers reviewing the SUP90142E-GE3 datasheet, SUP90142E-GE3 pinout, SUP90142E-GE3 application, or SUP90142E-GE3 equivalent, key selection criteria include its low R_DS(on)–Q_oss figure of merit, robust UIS rating (60 A single-pulse avalanche), and thermal performance with R_thJC = 0.4 °C/W - critical for high-current, high-temperature industrial and renewable energy designs.

Technical Context

This ThunderFET® MOSFET uses planar silicon technology with fully characterized avalanche capability and 100 % R_g testing. Its gate threshold voltage (V_GS(th) = 2–4 V) enables reliable turn-on with standard 10 V gate drivers, while low C_iss (3120 pF) and Cr_ss (24 pF) support fast switching with reduced EMI in hard-switched topologies.

The device features a co-packaged body diode with t_rr = 150–300 ns and Q_rr = 0.9–1.8 nC, making it suitable for synchronous rectification where reverse recovery behavior directly impacts efficiency. Thermal design is anchored by R_thJC = 0.4 °C/W and R_thJA = 40 °C/W (PCB mount), enabling high-power operation with appropriate heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports DC bus voltages up to 200 V in offline AC/DC and solar DC/AC inverters
R_DS(on) max @ 10 V	0.0152 Ω - enables ≤1.2 W conduction loss at 90 A continuous drain current
Q_g typ	58 nC - determines gate drive power requirement and switching speed in 100 kHz+ converters
I_D continuous @ T_C = 25 °C	90 A - defines maximum steady-state current handling with adequate case cooling
E_AS	180 mJ - quantifies single-pulse avalanche energy tolerance during transient overvoltage events
R_thJC	0.4 °C/W - allows precise junction temperature estimation when mounted on heatsink
V_SD @ I_F = 30 A	0.85–1.5 V - sets forward conduction loss of integrated body diode in freewheeling paths

Pinout & Package

Supplied in TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole configuration. Mounting requires mechanical isolation unless drain is referenced to heatsink potential.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Accepts 0–10 V logic-level signal; 3 Ω typical gate resistance limits ringing and simplifies driver design
D (Drain)	High-side power terminal	Connected to internal die substrate and metal tab; electrically common with heatsink mounting surface
S (Source)	Power return / reference node	Serves as local ground reference for gate drive; carries full load current and body diode return path

Key Features

Feature	Design Value
ThunderFET® optimization	Tuned for lowest R_DS(on)–Q_oss FOM, reducing combined conduction and switching losses in high-frequency SMPS
100 % R_g and UIS tested	Ensures gate robustness against transient stress and guarantees avalanche energy handling per unit
175 °C maximum T_J	Enables operation in thermally constrained environments such as enclosed UPS or motor drives without derating
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's green initiative for industrial and consumer applications
Body diode t_rr & Q_rr	150–300 ns t_rr and 0.9–1.8 nC Q_rr reduce switching loss and voltage overshoot in synchronous rectifier configurations

Applications

Uninterruptible Power Supplies (UPS)	Solar Microinverters
Use Scenario: High-efficiency DC/AC inversion stage in line-interactive and online UPS systems operating at 100–200 kHz switching frequency. IC Role / Device Role / Timing Role: Primary high-side switching MOSFET in half-bridge or full-bridge topology, handling bidirectional power flow during battery backup mode. Use Value: Low R_DS(on) minimizes conduction loss during extended battery discharge; 175 °C rating ensures reliability under sustained overload conditions.	Use Scenario: DC/AC inversion in residential solar microinverters, where each panel connects to a dedicated inverter module. IC Role / Device Role / Timing Role: Main switching element in interleaved flyback or H-bridge output stage, managing 200 V DC input and grid-synchronized 230 V AC output. Use Value: High avalanche energy (180 mJ) withstands lightning-induced transients on PV strings; low Q_g enables efficient zero-voltage switching (ZVS) implementation.
Class D Audio Amplifiers	Industrial Motor Drive Switches
Use Scenario: Output power stage in high-fidelity, high-power (>500 W) Class D amplifiers used in professional audio and active speaker systems. IC Role / Device Role / Timing Role: Half-bridge high- and low-side switch delivering PWM audio signals to loudspeaker loads with minimal distortion. Use Value: Fast switching (t_r/t_f = 125/80 ns typ.) preserves audio signal integrity; low C_iss/C_rss reduces electromagnetic interference in sensitive analog environments.	Use Scenario: Inverter leg switch in 3-phase BLDC or induction motor drives rated up to 5 kW, operating at 8–20 kHz PWM frequency. IC Role / Device Role / Timing Role: High-current switching device controlling phase voltage in variable-frequency drives (VFDs) with regenerative braking capability. Use Value: Robust body diode (I_SM = 240 A pulsed) handles reverse recovery during commutation; R_thJC = 0.4 °C/W supports compact heatsink integration in enclosed enclosures.

Uninterruptible Power Supplies (UPS)

Solar Microinverters

Use Scenario: High-efficiency DC/AC inversion stage in line-interactive and online UPS systems operating at 100–200 kHz switching frequency.

IC Role / Device Role / Timing Role: Primary high-side switching MOSFET in half-bridge or full-bridge topology, handling bidirectional power flow during battery backup mode.

Use Value: Low R_DS(on) minimizes conduction loss during extended battery discharge; 175 °C rating ensures reliability under sustained overload conditions.

Use Scenario: DC/AC inversion in residential solar microinverters, where each panel connects to a dedicated inverter module.

IC Role / Device Role / Timing Role: Main switching element in interleaved flyback or H-bridge output stage, managing 200 V DC input and grid-synchronized 230 V AC output.

Use Value: High avalanche energy (180 mJ) withstands lightning-induced transients on PV strings; low Q_g enables efficient zero-voltage switching (ZVS) implementation.

Class D Audio Amplifiers

Industrial Motor Drive Switches

Use Scenario: Output power stage in high-fidelity, high-power (>500 W) Class D amplifiers used in professional audio and active speaker systems.

IC Role / Device Role / Timing Role: Half-bridge high- and low-side switch delivering PWM audio signals to loudspeaker loads with minimal distortion.

Use Value: Fast switching (t_r/t_f = 125/80 ns typ.) preserves audio signal integrity; low C_iss/C_rss reduces electromagnetic interference in sensitive analog environments.

Use Scenario: Inverter leg switch in 3-phase BLDC or induction motor drives rated up to 5 kW, operating at 8–20 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-current switching device controlling phase voltage in variable-frequency drives (VFDs) with regenerative braking capability.

Use Value: Robust body diode (I_SM = 240 A pulsed) handles reverse recovery during commutation; R_thJC = 0.4 °C/W supports compact heatsink integration in enclosed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP90NF20	R_DS(on) = 0.022 Ω @ 10 V; Q_g = 120 nC; TO-220FP package (lower P_D)	Higher conduction loss and slower switching limit efficiency in >100 kHz designs	Prefer SUP90142E-GE3 for higher-frequency, higher-efficiency requirements; STP90NF20 suits cost-sensitive, lower-frequency motor controls
IXTH90N20L2	R_DS(on) = 0.018 Ω @ 10 V; Q_g = 65 nC; TO-247 package (higher thermal mass)	Larger footprint and higher gate charge increase layout complexity and drive loss	SUP90142E-GE3 offers better R_DS(on)–Q_g trade-off in TO-220AB; IXTH90N20L2 preferred only when TO-247 mechanical retention or higher I_DM is mandatory

Compared with STP90NF20 and IXTH90N20L2, SUP90142E-GE3 delivers the lowest R_DS(on)–Q_oss FOM in TO-220AB, enabling superior efficiency in space-constrained, high-frequency power stages - especially where thermal management relies on PCB copper area rather than massive heatsinks.

Availability

SUP90142E-GE3 is available at Aetrix Electronics and suitable for uninterruptible power supplies, solar microinverters, and Class D audio amplifiers requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant sourcing.

Supply support for SUP90142E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The SUP90142E-GE3 belongs to Vishay's ThunderFET® family, engineered specifically for high-efficiency, high-reliability power conversion in demanding switch-mode applications - emphasizing low FOM, rugged avalanche capability, and extended temperature operation.

FAQ

What is the maximum continuous drain current rating for SUP90142E-GE3 at 125 °C case temperature?

The SUP90142E-GE3 supports 52 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be validated against actual board layout, heatsinking, and ambient conditions. The full 90 A rating applies only at T_C = 25 °C with sufficient thermal management.

Does SUP90142E-GE3 have a fully characterized avalanche rating?

Yes, SUP90142E-GE3 is 100 % UIS (unclamped inductive switching) tested with a single-pulse avalanche current of 60 A and energy rating of 180 mJ. These values are guaranteed per unit and documented in the Absolute Maximum Ratings section - critical for reliability in inductive load switching and fault-tolerant power designs.

What is the gate-source threshold voltage range for SUP90142E-GE3?

The gate-source threshold voltage (V_GS(th)) for SUP90142E-GE3 is specified as 2 V minimum to 4 V maximum at V_DS = V_GS and I_D = 250 μA. This range ensures compatibility with standard 10 V gate drivers while providing margin against spurious turn-on due to noise or Miller coupling in high-dV/dt environments.

Can SUP90142E-GE3 be used in synchronous rectification applications?

Yes, SUP90142E-GE3 is suitable for synchronous rectification due to its low R_DS(on), fast body diode (t_rr = 150–300 ns, Q_rr = 0.9–1.8 nC), and rated source-drain diode current (I_S = 90 A). Its characteristics reduce conduction and switching losses compared to Schottky alternatives in 100–200 V output stages of DC/DC converters and LLC resonant converters.

What is the thermal resistance from junction to case (R_thJC) for SUP90142E-GE3?

The junction-to-case thermal resistance (R_thJC) for SUP90142E-GE3 is 0.4 °C/W, measured under steady-state conditions. This value enables accurate junction temperature prediction when the device is mounted to a heatsink via its isolated drain tab, supporting thermal design for high-power density applications like solar inverters and motor drives.

SUP90142E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: ThunderFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 15.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 87 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 31200 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP90142E-GE3 FAQ

1.How can I place an order for SUP90142E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP90142E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP90142E-GE3 reliable?

The price and inventory of SUP90142E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP90142E-GE3 is usually 5 days.

3.What payment methods are accepted for SUP90142E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP90142E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP90142E-GE3?

SUP90142E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP90142E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP90142E-GE3?

For technical support, including SUP90142E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP90142E-GE3 requirements.

6.How does Aetrix verify that SUP90142E-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP90142E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP90142E-GE3 meets industry standards.

7.What is the process for return or replacement of SUP90142E-GE3?

All SUP90142E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP90142E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP90142E-GE3 part is unused and in its original packaging.

Return procedure for SUP90142E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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