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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP90220E-GE3

Name: SUP90220E-GE3
Brand: Vishay Siliconix
SKU: SUP90220E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP90220E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP90220E-GE3.pdf

Description:: MOSFET N-CH 200V 64A TO220AB

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Product details

Overview

SUP90220E-GE3 from Vishay Siliconix is an N-channel 200 V, 64 A power MOSFET in TO-220AB package, featuring 0.0216 Ω R_DS(on) at V_GS = 10 V, 31.6 nC total gate charge, and 175 °C maximum junction temperature. It serves as a high-efficiency switching element in synchronous rectification and DC/DC converters operating under high thermal stress.

For engineers reviewing the SUP90220E-GE3 datasheet, SUP90220E-GE3 pinout, SUP90220E-GE3 application, or SUP90220E-GE3 equivalent, key selection criteria include its low R_DS(on)–Q_g figure-of-merit, robust avalanche energy rating (101 mJ), and validated 100 % UIS testing for reliable hard-switching operation in industrial power stages.

Technical Context

This MOSFET employs a planar silicon process optimized for high-voltage switching with enhanced body diode recovery (t_rr = 120–180 ns, Q_rr = 0.91–1.37 μC) and low reverse transfer capacitance (C_rss = 15 pF). Its gate threshold voltage range (2–4 V) supports standard 10 V gate drive while maintaining noise immunity.

The device is characterized for operation up to 175 °C junction temperature, with thermal resistance R_thJC = 0.65 °C/W enabling high-power dissipation when mounted on heatsinks. Its SOA curve defines safe pulsed operation up to I_DM = 100 A (100 μs) and V_DS derating per duty cycle and case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Supports primary-side switching in 100–120 VAC input PFC stages and 400 V bus DC/DC converters.
R_DS(on) max @ 10 V	0.0216 Ω - Enables ≤1.4 W conduction loss at 64 A continuous drain current under thermal design limits.
Q_g typ	31.6 nC - Determines gate drive power requirement (~316 μJ per 10 V switch cycle at 100 kHz).
I_D continuous @ T_C = 25 °C	64 A - Specifies maximum steady-state current with adequate heatsinking at case temperature ≤25 °C.
E_AS	101 mJ - Quantifies single-pulse avalanche ruggedness for inductive load switching without snubbers.
R_thJC	0.65 °C/W - Defines thermal path efficiency from junction to heatsink interface; enables ~355 W max PD at ΔT = 230 °C.
V_GS(th)	2–4 V - Ensures turn-on margin above logic-level drivers while avoiding false triggering from noise.

Pinout & Package

Package: TO-220AB, through-hole, single-channel N-channel MOSFET with drain-connected tab for direct heatsink mounting. Tab is electrically connected to drain (D).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives gate drive signal; requires ≥10 V for full enhancement; R_g = 0.6–6 Ω affects switching speed and ringing.
D (Drain)	High-side power output	Connected to internal die substrate and metal tab; must be isolated from heatsink unless electrically referenced to same potential.
S (Source)	Power return / reference node	Serves as common return for gate drive and load current; source inductance directly impacts switching stability and dV/dt immunity.

Key Features

Feature	Design Value
ThunderFET® technology	Optimized cell layout delivering 15 % lower R_DS(on)–Q_g FOM vs. prior-gen 200 V MOSFETs for improved efficiency in high-frequency SMPS.
100 % UIS tested	Each unit validated for unclamped inductive switching at rated I_AS = 45 A and E_AS = 101 mJ-critical for motor drive and flyback snubberless designs.
Body diode t_rr & Q_rr	t_rr = 120–180 ns, Q_rr = 0.91–1.37 μC-enables efficient synchronous rectification in LLC and phase-shifted full-bridge topologies.
175 °C T_J rating	Supports operation in sealed enclosures or high-ambient environments (e.g., solar microinverters, EV onboard chargers) without derating at full current.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B; suitable for automotive and industrial applications requiring green manufacturing.

Applications

Synchronous Rectification	DC/DC Converter
Use Scenario: Secondary-side switching in isolated 48 V–60 V output telecom and server PSUs operating at 300–500 kHz. IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce conduction loss; driven by controller's synchronous gate signal with precise timing relative to primary switch. Use Value: Achieves >2 % efficiency gain over 60 V Schottky due to R_DS(on) of 0.0216 Ω and fast body diode recovery (t_rr < 180 ns).	Use Scenario: High-current buck converter stage in industrial PLC power modules delivering 12 V/40 A from 48 V input. IC Role / Device Role / Timing Role: Low-side switch handling continuous 64 A current; synchronized with high-side FET via complementary PWM. Use Value: Conduction loss limited to 1.4 W at full load, enabling compact heatsink design and >95 % peak efficiency.
Solar Micro Inverter	Motor Drive Switch
Use Scenario: H-bridge leg in single-phase 250–300 V AC output microinverters interfacing with 60-cell PV panels. IC Role / Device Role / Timing Role: Half-bridge switch subjected to repetitive 200 V blocking and 30 A RMS current; operates with dead-time control to prevent shoot-through. Use Value: Avalanche-rated (E_AS = 101 mJ) withstands inductive kickback during fault conditions without external clamping.	Use Scenario: Inverter leg in 1–3 kW BLDC motor drives for HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: High-speed switching element in 3-phase bridge; handles pulsed currents up to 100 A (I_DM) during startup and overload. Use Value: 175 °C T_J rating allows sustained operation at 125 °C ambient without current derating, improving system power density.

Synchronous Rectification

DC/DC Converter

Use Scenario: Secondary-side switching in isolated 48 V–60 V output telecom and server PSUs operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce conduction loss; driven by controller's synchronous gate signal with precise timing relative to primary switch.

Use Value: Achieves >2 % efficiency gain over 60 V Schottky due to R_DS(on) of 0.0216 Ω and fast body diode recovery (t_rr < 180 ns).

Use Scenario: High-current buck converter stage in industrial PLC power modules delivering 12 V/40 A from 48 V input.

IC Role / Device Role / Timing Role: Low-side switch handling continuous 64 A current; synchronized with high-side FET via complementary PWM.

Use Value: Conduction loss limited to 1.4 W at full load, enabling compact heatsink design and >95 % peak efficiency.

Solar Micro Inverter

Motor Drive Switch

Use Scenario: H-bridge leg in single-phase 250–300 V AC output microinverters interfacing with 60-cell PV panels.

IC Role / Device Role / Timing Role: Half-bridge switch subjected to repetitive 200 V blocking and 30 A RMS current; operates with dead-time control to prevent shoot-through.

Use Value: Avalanche-rated (E_AS = 101 mJ) withstands inductive kickback during fault conditions without external clamping.

Use Scenario: Inverter leg in 1–3 kW BLDC motor drives for HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: High-speed switching element in 3-phase bridge; handles pulsed currents up to 100 A (I_DM) during startup and overload.

Use Value: 175 °C T_J rating allows sustained operation at 125 °C ambient without current derating, improving system power density.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	R_DS(on) = 0.022 Ω @ 10 V, Q_g = 35 nC, T_J = 175 °C, TO-220 package	Higher Q_g increases gate drive loss; identical avalanche rating but no 100 % UIS test documentation	Select when gate drive capability exceeds 31.6 nC and UIS validation is not required.
IXTP26N20P	R_DS(on) = 0.026 Ω @ 10 V, Q_g = 26 nC, T_J = 175 °C, TO-220 package	Lower Q_g improves switching efficiency but higher R_DS(on) raises conduction loss by ~20 % at 64 A	Select for high-frequency (>1 MHz) resonant converters where switching loss dominates.

Compared with STP20NM20 and IXTP26N20P, SUP90220E-GE3 delivers the lowest R_DS(on)–Q_g FOM among TO-220 200 V MOSFETs, making it optimal for thermally constrained, medium-frequency (100–300 kHz) hard-switched applications demanding both conduction and switching efficiency.

Availability

SUP90220E-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, DC/DC conversion, and motor drive applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and renewable energy systems.

Supply support for SUP90220E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.

The SUP90220E-GE3 belongs to Vishay's ThunderFET® family, engineered for high-efficiency, high-reliability power conversion in industrial, solar, and motor control systems where ruggedness and thermal stability are critical.

FAQ

What is the maximum continuous drain current rating for SUP90220E-GE3 at 125 °C case temperature?

The SUP90220E-GE3 has a continuous drain current rating of 37 A at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify heatsink performance to maintain T_C ≤ 125 °C under full-load conditions.

Does SUP90220E-GE3 have a fully rated avalanche capability, and how is it verified?

Yes, SUP90220E-GE3 is rated for single-pulse avalanche energy of 101 mJ (E_AS) with I_AS = 45 A, and every unit undergoes 100 % unclamped inductive switching (UIS) testing per datasheet S16-2291-Rev. A. This validation ensures robustness against inductive transients in motor drives and flyback converters without external protection components.

What is the typical gate charge profile of SUP90220E-GE3, and how does it affect switching behavior?

SUP90220E-GE3 has a typical total gate charge (Q_g) of 31.6 nC at V_DS = 100 V and V_GS = 10 V, with Q_gs = 8.6 nC and Q_gd = 7.6 nC. This distribution indicates moderate Miller plateau duration, supporting clean turn-on/turn-off transitions with standard gate drivers. The low Q_gd/Q_g ratio (≈24 %) reduces sensitivity to dV/dt-induced false turn-on.

Can SUP90220E-GE3 be used in synchronous rectification without external body diode optimization?

Yes, SUP90220E-GE3 is qualified for synchronous rectification due to its characterized body diode parameters: V_SD = 0.85–1.5 V at I_F = 12 A and t_rr = 120–180 ns. These values enable efficient replacement of Schottky diodes in 100–500 kHz converters without additional snubbing, provided gate timing accounts for reverse recovery delay.

Is the drain tab of SUP90220E-GE3 electrically isolated, and what mounting considerations apply?

No, the drain tab of SUP90220E-GE3 is electrically connected to the drain terminal. When mounted to a heatsink, electrical isolation (e.g., mica washer + thermal grease or insulated mounting kit) is mandatory unless the heatsink is referenced to the drain potential. Failure to isolate may cause short circuits in grounded-source configurations such as low-side switching.

SUP90220E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: ThunderFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 64A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1950 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP90220E-GE3 FAQ

1.How can I place an order for SUP90220E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP90220E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP90220E-GE3 reliable?

The price and inventory of SUP90220E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP90220E-GE3 is usually 5 days.

3.What payment methods are accepted for SUP90220E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP90220E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP90220E-GE3?

SUP90220E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP90220E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP90220E-GE3?

For technical support, including SUP90220E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP90220E-GE3 requirements.

6.How does Aetrix verify that SUP90220E-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP90220E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP90220E-GE3 meets industry standards.

7.What is the process for return or replacement of SUP90220E-GE3?

All SUP90220E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP90220E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP90220E-GE3 part is unused and in its original packaging.

Return procedure for SUP90220E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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