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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP90N03-03-E3

Name: SUP90N03-03-E3
Brand: Vishay Siliconix
SKU: SUP90N03-03-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP90N03-03-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP90N03-03-E3.pdf

Description:: MOSFET N-CH 30V 90A TO220AB

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Product details

Overview

SUP90N03-03-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 30 V drain-source voltage, 90 A continuous drain current at TC = 25 °C, and 2.9 mΩ RDS(on) at VGS = 10 V. It features TO-220AB package with drain-connected tab, 100 % Rg and UIS tested, and RoHS-compliant lead-free construction. It serves as a high-current synchronous rectifier or OR-ing switch in server DC/DC power stages.

For engineers reviewing the SUP90N03-03-E3 datasheet, SUP90N03-03-E3 pinout, SUP90N03-03-E3 application, or SUP90N03-03-E3 equivalent, key selection criteria include its low on-resistance at 4.5 V gate drive (3.3 mΩ), 82 nC total gate charge, body diode recovery time of 52–78 ns, and thermal resistance RthJC of 0.5 °C/W - all critical for high-efficiency, high-density power conversion designs.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in unidirectional high-current power paths. Its gate threshold voltage (1.5–2.5 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while its 171–257 nC total gate charge supports controlled turn-on/turn-off in hard-switched topologies.

The device integrates a robust intrinsic body diode with 0.8–1.2 V forward voltage at 22 A and 52–78 ns reverse recovery time, making it suitable for freewheeling and bidirectional current handling in synchronous buck converters and OR-ing circuits without requiring external Schottky diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
VDS	30 V - Maximum blocking voltage in power switch applications; defines use in ≤24 V nominal bus systems.
RDS(on)	2.9 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 20 A, supporting high-efficiency 48 V-to-12 V or 12 V-to-5 V DC/DC stages.
ID (cont.)	90 A @ TC = 25 °C - Package-limited current rating; requires heatsinking above ~70 °C case temperature.
Qg	82 nC (typ.) @ VGS = 4.5 V - Determines gate driver power requirement and switching speed in 3.3 V control systems.
RthJC	0.5 °C/W - Enables direct heatsink mounting to tab for thermal management; supports >200 W dissipation with adequate cooling.
VGS(th)	1.5–2.5 V - Ensures reliable turn-on with standard logic-level gate drivers; avoids partial enhancement in noise-prone environments.
trr / Qrr	52–78 ns / 70–105 nC - Defines body diode recovery behavior during commutation; impacts EMI and shoot-through risk in synchronous rectification.

Pinout & Package

Supplied in TO-220AB package with drain-connected metal tab for thermal and electrical connection. Mounting hole provided for heatsink attachment. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (Pin 1)	Control terminal	Receives gate drive signal; 1.4–2.1 Ω gate resistance limits ringing and dV/dt-induced turn-on.
Drain (Pin 2 / Tab)	High-side power path	Electrically and thermally connected to metal tab; must be isolated from chassis unless system ground referenced.
Source (Pin 3)	Return path / reference node	Serves as local ground reference for gate drive; layout must minimize inductance to reduce switching overshoot.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers ultra-low RDS(on) at low VGS, enabling efficient operation with 3.3 V or 4.5 V gate drive without level-shifting.
100 % Rg and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress.
Drain-connected tab	Provides low-thermal-resistance path to heatsink (RthJC = 0.5 °C/W); simplifies thermal design in high-power OR-ing modules.
RoHS-compliant Pb-free	Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles and industrial environmental compliance requirements.

Applications

Server OR-ing	High-Current DC/DC Converter
Use Scenario: Parallel redundant 12 V power supplies feeding a server motherboard, where only the highest-voltage supply powers the load. IC Role / Device Role / Timing Role: N-channel MOSFET used as active OR-ing switch, replacing Schottky diodes to reduce forward voltage drop and heat generation. Use Value: 2.9 mΩ RDS(on) cuts conduction loss by >70 % vs. typical 0.4 V Schottky, enabling >98 % efficiency at 60 A and eliminating forced-air cooling.	Use Scenario: Synchronous rectifier in secondary side of isolated 48 V-to-12 V telecom DC/DC converter operating at 300 kHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by PWM controller's gate drive output. Use Value: 82 nC Qg at 4.5 V allows clean switching with standard gate drivers; 52–78 ns trr prevents cross-conduction during dead-time transitions.
Hot-Swap Controller Interface	Industrial Motor Drive Protection
Use Scenario: Inrush current limiting and fault isolation in 24 V hot-swap module for programmable logic controllers. IC Role / Device Role / Timing Role: High-side power switch controlled by hot-swap controller IC to enable/discharge load capacitance safely. Use Value: 90 A ID rating and 30 V VDS support 20 A sustained loads with margin; 100 % UIS tested withstands load-dump transients up to 64.8 mJ.	Use Scenario: Overcurrent protection switch in 24 V BLDC motor gate driver power rail. IC Role / Device Role / Timing Role: High-current shutoff device activated by fault comparator during phase current over-limit events. Use Value: 0.5 °C/W RthJC enables rapid thermal response; 36 A IAS rating handles short-circuit energy without destruction during fault clearing.

Server OR-ing

High-Current DC/DC Converter

Use Scenario: Parallel redundant 12 V power supplies feeding a server motherboard, where only the highest-voltage supply powers the load.

IC Role / Device Role / Timing Role: N-channel MOSFET used as active OR-ing switch, replacing Schottky diodes to reduce forward voltage drop and heat generation.

Use Value: 2.9 mΩ RDS(on) cuts conduction loss by >70 % vs. typical 0.4 V Schottky, enabling >98 % efficiency at 60 A and eliminating forced-air cooling.

Use Scenario: Synchronous rectifier in secondary side of isolated 48 V-to-12 V telecom DC/DC converter operating at 300 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by PWM controller's gate drive output.

Use Value: 82 nC Qg at 4.5 V allows clean switching with standard gate drivers; 52–78 ns trr prevents cross-conduction during dead-time transitions.

Hot-Swap Controller Interface

Industrial Motor Drive Protection

Use Scenario: Inrush current limiting and fault isolation in 24 V hot-swap module for programmable logic controllers.

IC Role / Device Role / Timing Role: High-side power switch controlled by hot-swap controller IC to enable/discharge load capacitance safely.

Use Value: 90 A ID rating and 30 V VDS support 20 A sustained loads with margin; 100 % UIS tested withstands load-dump transients up to 64.8 mJ.

Use Scenario: Overcurrent protection switch in 24 V BLDC motor gate driver power rail.

IC Role / Device Role / Timing Role: High-current shutoff device activated by fault comparator during phase current over-limit events.

Use Value: 0.5 °C/W RthJC enables rapid thermal response; 36 A IAS rating handles short-circuit energy without destruction during fault clearing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	Higher RDS(on) = 4.7 mΩ @ 10 V; lower ID = 202 A but higher Qg = 131 nC; TO-220 package.	Less suitable for 4.5 V gate drive due to higher VGS(th) (2–4 V); higher switching loss in high-frequency DC/DC.	Prefer SUP90N03-03-E3 when low gate charge and logic-level drive are required; IRF1404PBF better for cost-sensitive, lower-frequency applications.
STP90NF03L	Similar RDS(on) = 3.3 mΩ @ 4.5 V; same TO-220 package; slightly lower ID = 80 A; no 100 % UIS test stated.	Lacks documented UIS ruggedness; may require additional snubbing in inductive load switching.	SUP90N03-03-E3 preferred where unclamped inductive switching reliability is critical; STP90NF03L acceptable for well-clamped, low-di/dt applications.

Compared with IRF1404PBF and STP90NF03L, the SUP90N03-03-E3 delivers superior 4.5 V drive capability, lower gate charge for faster switching, and factory-verified UIS ruggedness - making it optimal for high-reliability, high-efficiency server and telecom power systems where thermal and transient margins are constrained.

Availability

SUP90N03-03-E3 is available at Aetrix Electronics and suitable for server OR-ing, high-current DC/DC converters, and industrial hot-swap modules requiring stable component supply, long-term lifecycle assurance, and traceable RoHS-compliant sourcing.

Supply support for SUP90N03-03-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on performance, reliability, and thermal efficiency.

The SUP90N03-03-E3 belongs to Vishay's TrenchFET® Gen III power MOSFET family, engineered specifically for high-current, low-voltage DC/DC conversion and power distribution in datacenter, telecom, and industrial equipment.

FAQ

What is the maximum continuous drain current rating for SUP90N03-03-E3?

The SUP90N03-03-E3 is rated for 90 A continuous drain current at case temperature TC = 25 °C, limited by package thermal capacity. At TC = 70 °C, the rating remains 90 A, but ambient-limited operation drops to 28.8 A at TA = 25 °C on a 1" × 1" FR4 board. Derating curves confirm usable current down to ~30 A at TC = 125 °C.

Does SUP90N03-03-E3 support 3.3 V logic-level gate drive?

Yes, SUP90N03-03-E3 supports 3.3 V logic-level gate drive due to its gate threshold voltage range of 1.5–2.5 V and specified RDS(on) of 3.3 mΩ at VGS = 4.5 V. While full 90 A conduction requires ≥10 V for minimal on-resistance, 3.3 V can reliably switch moderate loads (<20 A) with predictable turn-on behavior and low shoot-through risk.

What is the thermal resistance from junction to case (RthJC) for SUP90N03-03-E3?

The SUP90N03-03-E3 has a typical junction-to-case thermal resistance (RthJC) of 0.5 °C/W, with a maximum of 0.6 °C/W. This value is measured under steady-state conditions and reflects the low-thermal-impedance path from die to the drain-connected TO-220AB tab, enabling effective heatsink coupling for high-power operation.

Is SUP90N03-03-E3 suitable for synchronous rectification in DC/DC converters?

Yes, SUP90N03-03-E3 is well-suited for synchronous rectification due to its low RDS(on) (2.9 mΩ at 10 V), fast body diode recovery (trr = 52–78 ns), and low Qrr (70–105 nC). These parameters reduce conduction and switching losses compared to Schottky diodes, especially in high-current, high-frequency 12 V and 5 V output stages.

What does "100 % Rg and UIS tested" mean for SUP90N03-03-E3?

"100 % Rg and UIS tested" means every SUP90N03-03-E3 unit undergoes production screening for gate resistance (1.4–2.1 Ω) and unclamped inductive switching (UIS) robustness. UIS testing verifies survival under worst-case inductive turn-off stress (IAS = 36 A, EAS = 64.8 mJ), ensuring field reliability in motor drives and power supply fault conditions.

SUP90N03-03-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 28.8A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 257 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12065 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.75W (Ta), 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP90N03-03-E3 FAQ

1.How can I place an order for SUP90N03-03-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP90N03-03-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP90N03-03-E3 reliable?

The price and inventory of SUP90N03-03-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP90N03-03-E3 is usually 5 days.

3.What payment methods are accepted for SUP90N03-03-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP90N03-03-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP90N03-03-E3?

SUP90N03-03-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP90N03-03-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP90N03-03-E3?

For technical support, including SUP90N03-03-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP90N03-03-E3 requirements.

6.How does Aetrix verify that SUP90N03-03-E3 is sourced from the original manufacturer or authorized distributors?

All SUP90N03-03-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP90N03-03-E3 meets industry standards.

7.What is the process for return or replacement of SUP90N03-03-E3?

All SUP90N03-03-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP90N03-03-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP90N03-03-E3 part is unused and in its original packaging.

Return procedure for SUP90N03-03-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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