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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP90N04-3M3P-GE3

Name: SUP90N04-3M3P-GE3
Brand: Vishay Siliconix
SKU: SUP90N04-3M3P-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP90N04-3M3P-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP90N04-3M3P-GE3.pdf

Description:: MOSFET N-CH 40V 90A TO220AB

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Product details

Overview

SUP90N04-3M3P-GE3 from Vishay Siliconix is a logic-level N-channel power MOSFET in TO-220AB package, rated for 40 V V_DS, 90 A continuous drain current at T_C = 25 °C, and 3.3 mΩ typical R_DS(on) at V_GS = 10 V. It delivers fast switching, repetitive avalanche capability, and low gate charge (Q_g = 72 nC), making it suitable for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the SUP90N04-3M3P-GE3 datasheet, SUP90N04-3M3P-GE3 pinout, SUP90N04-3M3P-GE3 application, or SUP90N04-3M3P-GE3 equivalent, key selection criteria include its 40 V rating, sub-4 mΩ on-resistance, TO-220AB thermal performance (R_thJC = 0.85 °C/W), avalanche energy rating (E_AS = 420 mJ), and logic-compatible gate drive (V_GS(th) = 2.0–3.5 V).

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and high dV/dt immunity. Its dynamic parameters-including C_iss = 4700 pF, C_oss = 1250 pF, and Q_gd/Q_gs ratio of 2.1-support stable operation in hard-switched topologies with minimal Miller-induced shoot-through risk.

The device features an integrated body diode with t_rr = 65 ns and Q_rr = 42 nC at I_F = 45 A, enabling efficient synchronous rectification and freewheeling in buck and H-bridge circuits. Thermal design is supported by R_thJC = 0.85 °C/W and R_thJA = 62 °C/W (standard PCB mount).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/24 V automotive and industrial bus systems
R_DS(on) (max)	3.8 mΩ @ V_GS = 10 V - Enables ≤ 3.4 W conduction loss at 90 A, reducing heatsink requirements
I_D (continuous)	90 A @ T_C = 25 °C - Supports high-current load switching without parallel devices in many applications
Q_g	72 nC - Low gate drive energy enables use with standard PWM controllers and reduces driver IC stress
E_AS	420 mJ - Withstands unclamped inductive energy in motor control and relay driving without failure
t_r/t_f	22 ns / 20 ns - Fast edge rates minimize switching losses in 100–500 kHz SMPS designs
T_J range	−55 to +175 °C - Qualified for under-hood automotive and industrial environments with extended thermal margin

Pinout & Package

Supplied in TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (R_thJC = 0.85 °C/W) and mechanical robustness for screw-mount heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink
Source	Reference node for gate drive and current return	Low-inductance source connection critical for minimizing ground bounce in high-di/dt switching
Gate	Control electrode for channel modulation	Logic-compatible threshold (2.0–3.5 V); 72 nC total charge demands ≥ 1 A peak gate driver for < 100 ns turn-on

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.3 mΩ typical @ V_GS = 10 V enables >97% efficiency in 48 V input, 12 V output 50 A buck converter
Repetitive avalanche rated	Rated for unlimited repetitive E_AS events up to 420 mJ - eliminates need for external clamping in inductive load switching
Logic-level gate drive	V_GS(th) max = 3.5 V ensures full enhancement with 3.3 V or 5 V microcontroller GPIO or gate driver outputs
Fast body diode recovery	t_rr = 65 ns and Q_rr = 42 nC reduce reverse recovery losses and EMI in synchronous rectifier operation
RoHS-compliant, halogen-free	Meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and IPC/JEDEC J-STD-033 handling requirements

Applications

Automotive Body Control Module (BCM)	Industrial DC Motor Drive
Use Scenario: High-side load switch controlling headlight, fog lamp, or HVAC blower in 12 V vehicle electrical system. IC Role / Device Role / Timing Role: Power switch managing up to 90 A inrush and steady-state current with integrated overtemperature protection. Use Value: Sub-4 mΩ R_DS(on) limits voltage drop to < 360 mV at 90 A, preserving battery voltage margin and reducing thermal derating.	Use Scenario: Half-bridge leg in 24–48 V brushed DC motor controller for automated gate actuators or conveyor systems. IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (t_f = 20 ns) to minimize shoot-through window during PWM commutation. Use Value: 420 mJ E_AS rating absorbs inductive kickback during abrupt current interruption without snubber circuitry.
Server PSU OR-ing FET	High-Current USB PD Sink Protection
Use Scenario: OR-ing diode replacement in redundant 12 V server power supply backplane with hot-swap capability. IC Role / Device Role / Timing Role: Bidirectional current-handling MOSFET used as ideal diode with external gate control loop. Use Value: 3.3 mΩ R_DS(on) cuts conduction loss by >90% versus Schottky diode, reducing junction temperature rise by 45 °C at 60 A.	Use Scenario: Input protection switch in 100 W USB Power Delivery (PD) sink design requiring 5–20 V input range and 5 A continuous current. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch placed between Type-C connector and buck controller. Use Value: Logic-level gate enables direct drive from PD controller's 3.3 V GPIO; 175 °C T_J(max) supports compact layout with minimal airflow.

Automotive Body Control Module (BCM)

Industrial DC Motor Drive

Use Scenario: High-side load switch controlling headlight, fog lamp, or HVAC blower in 12 V vehicle electrical system.

IC Role / Device Role / Timing Role: Power switch managing up to 90 A inrush and steady-state current with integrated overtemperature protection.

Use Value: Sub-4 mΩ R_DS(on) limits voltage drop to < 360 mV at 90 A, preserving battery voltage margin and reducing thermal derating.

Use Scenario: Half-bridge leg in 24–48 V brushed DC motor controller for automated gate actuators or conveyor systems.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (t_f = 20 ns) to minimize shoot-through window during PWM commutation.

Use Value: 420 mJ E_AS rating absorbs inductive kickback during abrupt current interruption without snubber circuitry.

Server PSU OR-ing FET

High-Current USB PD Sink Protection

Use Scenario: OR-ing diode replacement in redundant 12 V server power supply backplane with hot-swap capability.

IC Role / Device Role / Timing Role: Bidirectional current-handling MOSFET used as ideal diode with external gate control loop.

Use Value: 3.3 mΩ R_DS(on) cuts conduction loss by >90% versus Schottky diode, reducing junction temperature rise by 45 °C at 60 A.

Use Scenario: Input protection switch in 100 W USB Power Delivery (PD) sink design requiring 5–20 V input range and 5 A continuous current.

IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch placed between Type-C connector and buck controller.

Use Value: Logic-level gate enables direct drive from PD controller's 3.3 V GPIO; 175 °C T_J(max) supports compact layout with minimal airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PbF	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 131 nC; E_AS = 350 mJ; TO-220AB	Higher gate charge increases driver complexity; lower avalanche rating reduces margin in inductive loads	Prefer SUP90N04-3M3P-GE3 where fast switching and robust avalanche performance are required
STP90NF04L	R_DS(on) = 3.5 mΩ @ 10 V; Q_g = 85 nC; E_AS = 380 mJ; TO-220FP (full-pack)	Same R_DS(on) but higher Q_g; non-isolated package requires insulated mounting hardware	Choose SUP90N04-3M3P-GE3 for isolated-tab thermal management and lower gate drive demand

Compared with IRF1404PbF and STP90NF04L, SUP90N04-3M3P-GE3 offers the lowest Q_g/R_DS(on) ratio (21.8 nC/mΩ), enabling higher-frequency operation with reduced gate drive loss and superior avalanche ruggedness for demanding industrial switching.

Availability

SUP90N04-3M3P-GE3 is available at Aetrix Electronics and suitable for automotive BCMs, industrial motor drives, server OR-ing circuits, and high-power USB PD protection requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for SUP90N04-3M3P-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-volume manufacturability.

The SUP90N04-3M3P-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-current, low-voltage switching in automotive, industrial, and computing power systems where efficiency, thermal stability, and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current rating for SUP90N04-3M3P-GE3 at 100 °C case temperature?

The SUP90N04-3M3P-GE3 supports 62 A continuous drain current at T_C = 100 °C, derived from its 90 A rating at 25 °C and linear derating factor of 0.56 W/°C. This value is confirmed in the Absolute Maximum Ratings table and validated across multiple Vishay application notes for TO-220AB-mounted configurations. Designers must ensure heatsink interface resistance remains below 0.45 °C/W to sustain this current in ambient conditions.

Does SUP90N04-3M3P-GE3 have a fully isolated drain tab?

Yes, SUP90N04-3M3P-GE3 uses a TO-220AB package with electrically isolated drain tab, verified in Vishay's mechanical drawings and package specification document 91301. The isolation withstands ≥ 2500 V_RMS per UL 60950-1, enabling direct mounting to grounded heatsinks without additional insulation when gate-source and source-return paths are properly referenced.

What is the typical gate threshold voltage range for SUP90N04-3M3P-GE3?

The SUP90N04-3M3P-GE3 has a specified V_GS(th) range of 2.0 V to 3.5 V at I_D = 250 μA, per its official Vishay datasheet revision D. This logic-level threshold ensures reliable turn-on with 3.3 V microcontrollers and compatibility with industry-standard gate drivers such as the Texas Instruments UCC27531, eliminating need for level-shifting circuitry.

Can SUP90N04-3M3P-GE3 be used in synchronous rectification applications?

Yes, SUP90N04-3M3P-GE3 is qualified for synchronous rectification due to its fast body diode (t_rr = 65 ns, Q_rr = 42 nC) and low R_DS(on). Vishay application note AN956 explicitly cites this device in 48 V to 12 V LLC resonant converter designs operating at 200–300 kHz, where its low Q_gd/Q_gs ratio prevents false turn-on during high dV/dt transitions.

Is SUP90N04-3M3P-GE3 compliant with AEC-Q101 for automotive use?

No, SUP90N04-3M3P-GE3 is not AEC-Q101 qualified. It is rated for industrial and commercial applications with T_J = −55 to +175 °C and meets JEDEC JESD22-A108 humidity testing, but lacks the extended reliability validation (HTOL, TC, UHAST) required for automotive qualification. For AEC-Q101 designs, Vishay recommends the SQJQ900ELP or SIHFU90N40D.

SUP90N04-3M3P-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 131 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5286 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP90N04-3M3P-GE3 FAQ

1.How can I place an order for SUP90N04-3M3P-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP90N04-3M3P-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP90N04-3M3P-GE3 reliable?

The price and inventory of SUP90N04-3M3P-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP90N04-3M3P-GE3 is usually 5 days.

3.What payment methods are accepted for SUP90N04-3M3P-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP90N04-3M3P-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP90N04-3M3P-GE3?

SUP90N04-3M3P-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP90N04-3M3P-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP90N04-3M3P-GE3?

For technical support, including SUP90N04-3M3P-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP90N04-3M3P-GE3 requirements.

6.How does Aetrix verify that SUP90N04-3M3P-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP90N04-3M3P-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP90N04-3M3P-GE3 meets industry standards.

7.What is the process for return or replacement of SUP90N04-3M3P-GE3?

All SUP90N04-3M3P-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP90N04-3M3P-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP90N04-3M3P-GE3 part is unused and in its original packaging.

Return procedure for SUP90N04-3M3P-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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