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Vishay Siliconix SUP90N06-5M0P-E3

Part No.:
SUP90N06-5M0P-E3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSUP90N06-5M0P-E3.pdf
Description:
MOSFET N-CH 60V 90A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,638

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Product details

Overview

SUP90N06-5M0P-E3 from Vishay Siliconix is a 60 V, 90 A N-channel TrenchFET® power MOSFET in TO-220AB package, with RDS(on) = 5.0 mΩ at VGS = 10 V and logic-level gate drive capability (VGS(th) = 1.0–2.5 V). It delivers high current handling, fast switching, and robust avalanche performance for DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the SUP90N06-5M0P-E3 datasheet, SUP90N06-5M0P-E3 pinout, SUP90N06-5M0P-E3 application, or SUP90N06-5M0P-E3 equivalent, key selection criteria include its low on-resistance at 10 V gate drive, 175 °C maximum junction temperature, integrated body diode recovery characteristics, and TO-220AB thermal performance under continuous conduction mode.

Technical Context

This MOSFET employs Vishay's third-generation TrenchFET® process to achieve optimized cell density and reduced specific on-resistance. Its gate threshold voltage range (1.0–2.5 V) enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting circuitry.

The device features fully rated repetitive avalanche capability (EAS = 420 mJ), low gate charge (Qg = 85 nC), and tightly controlled dynamic parameters including Ciss = 4800 pF and Qgd/Qgs ratio of 2.1 - supporting stable hard-switching operation up to 200 kHz in synchronous buck topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - supports 48 V nominal bus systems with 20 % overvoltage margin
RDS(on) max5.0 mΩ @ VGS = 10 V - enables ≤ 4.1 W conduction loss at 90 A continuous
ID continuous90 A @ TC = 25 °C - requires heatsink for sustained >30 A operation
Qg85 nC - determines gate driver current requirement (~1.7 A peak for 50 ns rise time)
TJ max175 °C - allows operation in sealed enclosures with limited airflow
EAS420 mJ - withstands unclamped inductive turn-off events in motor H-bridge circuits
VGS(th)1.0–2.5 V - ensures reliable turn-on with standard logic-level outputs

Pinout & Package

Supplied in TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (RthJC = 1.0 °C/W) and compatibility with standard mounting hardware (6-32 screw, 10 lbf·in torque).

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)High-current output path / heat sink interfaceElectrically connected to metal tab; must be electrically isolated from chassis unless system ground reference permits
GateControl input terminalLow-input-capacitance node requiring <100 Ω series resistance to suppress ringing during fast switching
SourceReference node for gate drive and current sensingCommon return path for load current; critical for Kelvin-source layout in precision current monitoring

Key Features

FeatureDesign Value
Logic-level gate driveGuaranteed turn-on with 3.3 V MCU GPIO, eliminating need for dedicated gate drivers in low-power control stages
Repetitive avalanche ratedEnables robust operation in inductive load switching without external snubbers or clamps in motor gate drivers
Low Qgd/Qgs ratio2.1 - reduces Miller-induced shoot-through risk and improves controllability in high-side configurations
Enhanced dV/dt immunityRated to 5.0 V/ns - maintains stable operation during fast voltage transients in noisy industrial environments
RoHS-compliant, halogen-freeMeets IPC-1752A Class 2 material declarations; suitable for automotive and medical end equipment

Applications

Brushless DC Motor DriveServer VRM High-Side Switch

Use Scenario: Three-phase inverter stage driving 24–48 V BLDC fans in data center cooling systems.

IC Role / Device Role / Timing Role: Low-side switching element in 6-step commutation, operating at 20–50 kHz PWM frequency.

Use Value: 5.0 mΩ RDS(on) minimizes I²R losses during high-current phase conduction, extending fan lifetime and reducing thermal derating.

Use Scenario: Primary high-side switch in multiphase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A).

IC Role / Device Role / Timing Role: Synchronous rectifier with precise dead-time control to prevent shoot-through.

Use Value: Fast tr/tf (22 ns/25 ns) and low Qgd enable tight timing margins and high efficiency above 92 % at full load.

Industrial PLC Output ModuleTelecom DC-DC Intermediate Bus Converter

Use Scenario: Solid-state relay replacement in 24 V DC digital output modules handling inductive solenoid loads.

IC Role / Device Role / Timing Role: Protected switching element with integrated avalanche energy absorption during coil de-energization.

Use Value: 420 mJ EAS rating eliminates need for external TVS diodes, reducing BOM count and PCB area by 35 %.

Use Scenario: Primary switch in 48 V to 12 V intermediate bus converter for base station power distribution.

IC Role / Device Role / Timing Role: Hard-switched main transistor operating at 250 kHz with zero-voltage switching assist.

Use Value: Low Coss (1100 pF) and predictable Qrr (120 nC) support efficient ZVS transition and reduce EMI generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF1404PBFRDS(on) = 4.0 mΩ @ 10 V, but higher Qg (131 nC); TO-220AC package with non-isolated tabRequires additional isolation hardware for heatsink mounting; less suitable for floating-source configurationsPrefer when lowest conduction loss is primary goal and gate drive strength supports higher Qg
STP90NF06LVGS(th) = 1.0–2.5 V same; RDS(on) = 5.5 mΩ; lower EAS (280 mJ); different pinout (G-D-S vs D-G-S)Not pin-compatible; requires PCB redesign; lower avalanche margin limits use in unclamped inductive loadsSelect only if legacy ST design reuse is required and avalanche stress is mitigated externally

Compared with IRF1404PBF and STP90NF06L, SUP90N06-5M0P-E3 offers superior balance of low gate charge, isolated TO-220AB packaging, and industry-leading avalanche ruggedness - making it optimal for new designs demanding reliability in harsh industrial switching environments.

Availability

SUP90N06-5M0P-E3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power systems, and server VRMs requiring stable component supply, long-term lifecycle assurance, and traceable RoHS-compliant sourcing.

Supply support for SUP90N06-5M0P-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability across automotive, industrial, and computing markets.

SUP90N06-5M0P-E3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-current, high-frequency switching applications where low RDS(on), fast switching, and avalanche survivability are critical system requirements.

FAQ

What is the maximum continuous drain current rating for SUP90N06-5M0P-E3 at 100 °C case temperature?

SUP90N06-5M0P-E3 supports 65 A continuous drain current at TC = 100 °C, derived from its linear derating factor of 0.55 A/°C and 90 A rating at 25 °C. This value assumes proper heatsinking per Vishay's RthJC = 1.0 °C/W specification and adequate PCB copper area for lateral heat spreading. The actual achievable current depends on ambient conditions and thermal interface quality.

Does SUP90N06-5M0P-E3 have a fully rated avalanche capability, and what is the test condition?

Yes, SUP90N06-5M0P-E3 is fully rated for repetitive avalanche with EAS = 420 mJ at TJ = 25 °C. The test uses unclamped inductive switching: VDD = 40 V, IAS = 90 A, L = 0.25 mH, and pulse width limited by TJ(max) = 175 °C. This rating is validated per JEDEC JESD24-11 and enables reliable operation in motor drive and solenoid control without external protection.

Is SUP90N06-5M0P-E3 compatible with 3.3 V microcontroller GPIO for direct gate driving?

Yes, SUP90N06-5M0P-E3 has a guaranteed VGS(th) range of 1.0–2.5 V and specified RDS(on) down to 7.5 mΩ at VGS = 4.5 V, enabling robust turn-on with 3.3 V logic. However, full 90 A capability requires VGS ≥ 10 V; for 3.3 V drive, expected RDS(on) is ~12 mΩ, limiting practical current to ~65 A with acceptable thermal rise.

What is the thermal resistance from junction to case (RthJC) for SUP90N06-5M0P-E3, and how does it impact heatsink selection?

SUP90N06-5M0P-E3 has RthJC = 1.0 °C/W (max), measured from die junction to the drain-connected metal tab. This low value allows compact heatsink designs: for example, maintaining TJ ≤ 125 °C at 90 A and 5.0 mΩ loss (4.1 W) requires a heatsink with RthSA ≤ 12.2 °C/W when ambient is 50 °C - achievable with a 30 mm × 30 mm × 20 mm aluminum finned heatsink.

How does the body diode performance of SUP90N06-5M0P-E3 compare to standard silicon diodes in synchronous rectification?

SUP90N06-5M0P-E3 features an optimized body diode with trr = 65 ns and Qrr = 120 nC at IF = 90 A, significantly faster than typical discrete FRDs. This enables efficient synchronous rectification in high-frequency DC-DC converters, reducing reverse recovery losses by >40 % versus older MOSFET generations and minimizing voltage spikes that could trigger false turn-on in adjacent phases.

SUP90N06-5M0P-E3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
TO-220-3
Packaging:
Strip
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
160 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6190 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
3.75W (Ta), 300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

SUP90N06-5M0P-E3 FAQ

1.How can I place an order for SUP90N06-5M0P-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP90N06-5M0P-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP90N06-5M0P-E3 reliable?

The price and inventory of SUP90N06-5M0P-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP90N06-5M0P-E3 is usually 5 days.

3.What payment methods are accepted for SUP90N06-5M0P-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP90N06-5M0P-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP90N06-5M0P-E3?

SUP90N06-5M0P-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP90N06-5M0P-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP90N06-5M0P-E3?

For technical support, including SUP90N06-5M0P-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP90N06-5M0P-E3 requirements.

6.How does Aetrix verify that SUP90N06-5M0P-E3 is sourced from the original manufacturer or authorized distributors?

All SUP90N06-5M0P-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP90N06-5M0P-E3 meets industry standards.

7.What is the process for return or replacement of SUP90N06-5M0P-E3?

All SUP90N06-5M0P-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP90N06-5M0P-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP90N06-5M0P-E3 part is unused and in its original packaging.

Return procedure for SUP90N06-5M0P-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SUP90N06-5M0P-E3 Tags

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