Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP90N15-18P-E3

Name: SUP90N15-18P-E3
Brand: Vishay Siliconix
SKU: SUP90N15-18P-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SUP90N15-18P-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP90N15-18P-E3.pdf

Description:: MOSFET N-CH 150V 90A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,521

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SUP90N15-18P-E3 from Vishay Siliconix is a 150 V, 90 A N-channel power MOSFET in TO-220AB package, with R_DS(on) = 18 mΩ at V_GS = 10 V, logic-level gate drive capability (V_GS(th) max 4.0 V), and rated for repetitive avalanche energy up to 750 mJ - used in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the SUP90N15-18P-E3 datasheet, SUP90N15-18P-E3 pinout, SUP90N15-18P-E3 application, or SUP90N15-18P-E3 equivalent, key selection criteria include its low on-resistance at 10 V gate drive, fast switching performance (Q_g = 110 nC), rugged unclamped inductive switching capability, and thermal resistance (R_thJC = 0.55 °C/W) suited for high-current, medium-voltage switching.

Technical Context

This MOSFET employs third-generation TrenchFET® technology optimized for low conduction loss and high dV/dt immunity. Its gate threshold voltage range (2.0–4.0 V) ensures reliable turn-on with standard logic-level drivers, while the integrated body diode supports synchronous rectification and freewheeling in hard-switched topologies.

The device is characterized for operation up to T_J = 175 °C and features specified dynamic parameters including C_iss = 4900 pF, C_oss = 1120 pF, and C_rss = 280 pF at V_DS = 25 V - enabling accurate snubber design and EMI prediction in high-frequency SMPS applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - supports 120 VAC input-derived bus rails with margin for surge and ringing
R_DS(on) max	18 mΩ at V_GS = 10 V - enables ≤1.5 W conduction loss at 90 A continuous drain current
I_D continuous	90 A at T_C = 25 °C - requires heatsinking for sustained >40 A operation
Q_g	110 nC - determines gate driver power requirement and switching speed in 100–500 kHz converters
E_AS	750 mJ - allows safe operation under unclamped inductive load switching without external clamping
R_thJC	0.55 °C/W - enables efficient heat transfer to heatsink; junction-to-case path dominates thermal management
V_GS(th)	2.0–4.0 V - ensures full enhancement with 3.3 V or 5 V microcontroller GPIO or gate driver outputs

Pinout & Package

Supplied in TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical lead configuration. Mounting screw hole centered on tab for mechanical stability and thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to metal tab	Primary heat path to heatsink; must be electrically isolated unless system ground reference permits direct connection
Source	Reference node for gate control and current return path	Connects to power ground or low-side shunt; defines common reference for gate drive loop
Gate	Control electrode for channel modulation	High-impedance input requiring low-inductance routing and local decoupling to suppress ringing during fast switching

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on with 3.3 V or 5 V controllers - eliminates need for level-shifting or dedicated gate drivers in many embedded systems
Repetitive avalanche rated	Rated for 750 mJ single-pulse and 15 mJ repetitive avalanche - enables robustness in inductive load switching without external protection
Low R_DS(on) × Q_g figure of merit	1.98 Ω·nC - balances conduction and switching losses for high-efficiency 100–300 kHz power stages
Enhanced dV/dt immunity	Rated for 4.5 V/ns (min) - reduces risk of false turn-on in high-noise, high-dV/dt environments such as motor drives
RoHS-compliant, halogen-free	Meets JEDEC JS709B and IEC 61249-2-21 - supports compliance in industrial and automotive supply chains

Applications

Switch-Mode Power Supply (SMPS)	Brushless DC Motor Drive
Use Scenario: Primary-side switch in 300–1000 W offline flyback or LLC resonant converters with universal AC input. IC Role / Device Role / Timing Role: High-side main switching element handling full primary current and voltage stress. Use Value: Low R_DS(on) minimizes conduction loss at high duty cycles; avalanche rating absorbs leakage inductance spikes without snubber.	Use Scenario: Low-side phase switch in 3-phase BLDC inverter driving 5–15 kW industrial fans or pumps. IC Role / Device Role / Timing Role: Synchronized PWM-controlled power switch in half-bridge leg, operating at 8–20 kHz. Use Value: Fast switching and low Q_g reduce transition losses; rugged dV/dt rating prevents shoot-through during high dv/dt commutation events.
Industrial DC Power Distribution	Hot-Swap Controller Protection
Use Scenario: OR-ing FET or main power switch in 48 V telecom/data center distribution boards. IC Role / Device Role / Timing Role: Bidirectional blocking switch managing load current and fault isolation. Use Value: Low R_DS(on) limits voltage drop and self-heating under 80 A steady-state load; TO-220AB package supports bolt-down heatsinking.	Use Scenario: Inrush current limiter and overcurrent protection switch in modular server backplane slots. IC Role / Device Role / Timing Role: Controlled turn-on/turn-off element limiting peak inrush and responding to fast overcurrent faults. Use Value: Precise V_GS(th) window enables accurate current-limit threshold setting; avalanche rating tolerates transient overvoltage during hot-plug events.

Switch-Mode Power Supply (SMPS)

Brushless DC Motor Drive

Use Scenario: Primary-side switch in 300–1000 W offline flyback or LLC resonant converters with universal AC input.

IC Role / Device Role / Timing Role: High-side main switching element handling full primary current and voltage stress.

Use Value: Low R_DS(on) minimizes conduction loss at high duty cycles; avalanche rating absorbs leakage inductance spikes without snubber.

Use Scenario: Low-side phase switch in 3-phase BLDC inverter driving 5–15 kW industrial fans or pumps.

IC Role / Device Role / Timing Role: Synchronized PWM-controlled power switch in half-bridge leg, operating at 8–20 kHz.

Use Value: Fast switching and low Q_g reduce transition losses; rugged dV/dt rating prevents shoot-through during high dv/dt commutation events.

Industrial DC Power Distribution

Hot-Swap Controller Protection

Use Scenario: OR-ing FET or main power switch in 48 V telecom/data center distribution boards.

IC Role / Device Role / Timing Role: Bidirectional blocking switch managing load current and fault isolation.

Use Value: Low R_DS(on) limits voltage drop and self-heating under 80 A steady-state load; TO-220AB package supports bolt-down heatsinking.

Use Scenario: Inrush current limiter and overcurrent protection switch in modular server backplane slots.

IC Role / Device Role / Timing Role: Controlled turn-on/turn-off element limiting peak inrush and responding to fast overcurrent faults.

Use Value: Precise V_GS(th) window enables accurate current-limit threshold setting; avalanche rating tolerates transient overvoltage during hot-plug events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP90NF15	R_DS(on) = 18 mΩ at V_GS = 10 V; Q_g = 120 nC; slightly higher C_oss (1250 pF)	Same voltage/current class but slower switching due to higher Q_g; less suitable for >250 kHz designs	Prefer when cost sensitivity outweighs switching efficiency; verify gate driver capability for higher Q_g
IXTH90N15L2	R_DS(on) = 17.5 mΩ; Q_g = 95 nC; enhanced SOA for linear-mode operation	Better suited for analog/linear-regulator use cases; not optimized for avalanche ruggedness	Select when operating in active region (e.g., electronic load); avoid where unclamped inductive switching occurs

Compared with STP90NF15 and IXTH90N15L2, the SUP90N15-18P-E3 offers superior balance of low Q_g, high avalanche energy, and tight V_GS(th) distribution - making it optimal for high-reliability, medium-frequency SMPS and motor control where both efficiency and ruggedness are critical.

Availability

SUP90N15-18P-E3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power systems, and high-current DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SUP90N15-18P-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The SUP90N15-18P-E3 belongs to Vishay's TrenchFET® Gen IV high-current power MOSFET family, engineered for demanding industrial and telecom power conversion where low R_DS(on), fast switching, and avalanche survivability are essential.

FAQ

What is the maximum continuous drain current rating for SUP90N15-18P-E3 at 100 °C case temperature?

The SUP90N15-18P-E3 supports 60 A continuous drain current at T_C = 100 °C, derated linearly from 90 A at 25 °C using a 0.60 W/°C thermal slope. This rating assumes proper heatsinking and mounting per Vishay's recommended torque (1.1 N·m) and thermal interface material. The SUP90N15-18P-E3 datasheet specifies this limit in the Absolute Maximum Ratings table under "Continuous drain current" with thermal derating factor.

Does SUP90N15-18P-E3 support logic-level gate drive at 3.3 V?

Yes, SUP90N15-18P-E3 is characterized for logic-level operation with V_GS(th) ranging from 2.0 V to 4.0 V, and R_DS(on) is guaranteed ≤32 mΩ at V_GS = 4.5 V and I_D = 30 A. While full 90 A conduction requires ≥10 V, 3.3 V drive enables partial enhancement suitable for low-power control or pre-biasing - confirmed in the "Static Characteristics" section of the SUP90N15-18P-E3 datasheet.

What is the avalanche energy rating for SUP90N15-18P-E3, and how is it tested?

The SUP90N15-18P-E3 is rated for 750 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = 100 V, I_AS = 90 A, and T_J = 25 °C. Testing follows the unclamped inductive switching (UIS) method per JEDEC standard JESD24-1, with pulse width controlled to limit junction temperature rise. This rating is explicitly listed in the Absolute Maximum Ratings table for the SUP90N15-18P-E3.

Is the drain tab of SUP90N15-18P-E3 electrically isolated from the mounting surface?

No - the drain (D) is internally connected to the metal tab in the TO-220AB package of SUP90N15-18P-E3. Electrical isolation from the heatsink must be achieved using an insulating washer and shoulder washer kit, or a thermally conductive but electrically isolating pad. This construction is standard for Vishay's TO-220AB power MOSFETs and is documented in the SUP90N15-18P-E3 package outline drawing and thermal section.

What are the key differences between SUP90N15-18P-E3 and IRL620 in terms of voltage, current, and application scope?

SUP90N15-18P-E3 (150 V, 90 A, R_DS(on) = 18 mΩ) targets high-power industrial switching, whereas IRL620 (200 V, 5.2 A, R_DS(on) = 0.8 Ω) serves low-current logic-level applications like signal switching or small solenoid drivers. Their voltage classes, current capacities, and R_DS(on) differ by over one order of magnitude - making them non-interchangeable. The SUP90N15-18P-E3 datasheet confirms no functional or parametric overlap with IRL620 beyond shared N-channel MOSFET topology.

SUP90N15-18P-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4180 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 3.75W (Ta), 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP90N15-18P-E3 FAQ

1.How can I place an order for SUP90N15-18P-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP90N15-18P-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP90N15-18P-E3 reliable?

The price and inventory of SUP90N15-18P-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP90N15-18P-E3 is usually 5 days.

3.What payment methods are accepted for SUP90N15-18P-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP90N15-18P-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP90N15-18P-E3?

SUP90N15-18P-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP90N15-18P-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP90N15-18P-E3?

For technical support, including SUP90N15-18P-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP90N15-18P-E3 requirements.

6.How does Aetrix verify that SUP90N15-18P-E3 is sourced from the original manufacturer or authorized distributors?

All SUP90N15-18P-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP90N15-18P-E3 meets industry standards.

7.What is the process for return or replacement of SUP90N15-18P-E3?

All SUP90N15-18P-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP90N15-18P-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP90N15-18P-E3 part is unused and in its original packaging.

Return procedure for SUP90N15-18P-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …