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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUV85N10-10-E3

Name: SUV85N10-10-E3
Brand: Vishay Siliconix
SKU: SUV85N10-10-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUV85N10-10-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUV85N10-10-E3.pdf

Description:: MOSFET N-CH 100V 85A TO220AB

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Product details

Overview

SUV85N10-10-E3 from Vishay Siliconix is a logic-level N-channel enhancement-mode power MOSFET in TO-220AB package, rated for 100 V V_DS, 85 A continuous drain current at T_C = 25 °C, and 10 mΩ R_DS(on) at V_GS = 10 V. It features repetitive avalanche rating, fast switching, and low gate charge (Q_g = 72 nC), making it suitable for high-efficiency DC-DC converters and motor control circuits.

For engineers reviewing the SUV85N10-10-E3 datasheet, SUV85N10-10-E3 pinout, SUV85N10-10-E3 application, or SUV85N10-10-E3 equivalent, key selection criteria include its 100 V blocking voltage, 10 mΩ on-resistance at 10 V gate drive, TO-220AB thermal performance (R_thJC = 0.9 °C/W), avalanche energy rating (E_AS = 420 mJ), and compatibility with standard logic-level gate drivers.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and high switching efficiency. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures reliable turn-on with 3.3 V or 5 V microcontroller outputs, while the integrated body diode supports freewheeling in inductive loads.

The device's dynamic parameters-including C_iss = 3800 pF, C_oss = 1100 pF, and Q_gd/Q_gs ratio of ~2.4-support stable operation in hard-switched topologies up to 200 kHz. Thermal design is enabled by low junction-to-case resistance (0.9 °C/W) and validated mounting torque (1.1 N·m).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports input rails up to 80 V DC in buck converters or 48 V bus systems with margin.
R_DS(on) @ V_GS = 10 V	10 mΩ - Enables ≤ 0.72 W conduction loss at 85 A, reducing heatsink requirements.
I_D (continuous, T_C = 25 °C)	85 A - Delivers high current in compact TO-220AB footprint without derating below 100 °C case temperature.
Q_g	72 nC - Compatible with standard gate drivers (e.g., IR2110, UCC27531) at ≤ 500 kHz switching.
E_AS	420 mJ - Withstands unclamped inductive energy in motor phase-leg or solenoid drive without failure.
R_thJC	0.9 °C/W - Allows direct heatsink mounting with thermal paste for < 50 °C junction rise at full load.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole configuration. Mounting screw: M3, torque 1.1 N·m. Tab electrically connected to drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (left, when label side faces viewer)	Gate (G)	Low-impedance control input; requires < 72 nC charge for full enhancement; sensitive to ESD.
Lead 2 (center)	Drain (D)	Main power output node; internally bonded to metal tab; must be electrically isolated from heatsink unless system ground referenced.
Lead 3 (right)	Source (S)	Power return path and gate reference; connects to PCB ground plane; carries full load current.

Key Features

Feature	Design Value
Logic-level gate drive	Turns fully on at V_GS = 4.5 V, enabling direct interface with 3.3 V/5 V MCUs without level-shifting.
Repetitive avalanche rated	Rated for I_AR = 85 A and E_AR = 25 mJ, supporting robust operation in inductive switching faults.
Low Q_gd/Q_gs ratio	Ratio of 2.4 minimizes Miller-induced shoot-through risk in half-bridge configurations.
Enhanced dV/dt immunity	Specified peak diode recovery dV/dt = 5.0 V/ns, reducing false triggering in noisy environments.

Applications

Brushless DC Motor Control	Industrial DC-DC Converters
Use Scenario: Three-phase inverter stage driving 24–48 V BLDC motors in HVAC blowers or power tools. IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-step commutation; handles 85 A peak phase current with < 10 mΩ conduction loss. Use Value: Reduces I²R losses by >35% vs. comparable 15 mΩ MOSFETs, lowering thermal stress and enabling smaller heatsinks.	Use Scenario: Primary-side synchronous rectifier or secondary-side switch in isolated 48 V to 12 V telecom DC-DC modules. IC Role / Device Role / Timing Role: Main power switch in active clamp forward or LLC resonant converter operating at 100–200 kHz. Use Value: 72 nC total gate charge enables efficient drive with < 1 W gate driver loss, improving overall converter efficiency to ≥95%.
Automotive Body Control Modules	High-Current Load Switching
Use Scenario: Power distribution unit (PDU) managing headlight, radiator fan, and seat heater loads in 12 V vehicle architectures. IC Role / Device Role / Timing Role: Protected high-side load switch with integrated current sensing and fault reporting via external circuitry. Use Value: 100 V rating provides surge immunity against load-dump transients (ISO 7637-2 Pulse 5a), eliminating need for external TVS.	Use Scenario: Solid-state replacement for electromechanical relays in battery disconnect, UPS transfer, or solar combiner boxes. IC Role / Device Role / Timing Role: Low-loss bidirectional current path with fast turn-off (< 45 ns fall time) for arc suppression. Use Value: 420 mJ single-pulse avalanche energy withstands inductive kickback from 100 A+ contactor coils without snubber networks.

Brushless DC Motor Control

Industrial DC-DC Converters

Use Scenario: Three-phase inverter stage driving 24–48 V BLDC motors in HVAC blowers or power tools.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-step commutation; handles 85 A peak phase current with < 10 mΩ conduction loss.

Use Value: Reduces I²R losses by >35% vs. comparable 15 mΩ MOSFETs, lowering thermal stress and enabling smaller heatsinks.

Use Scenario: Primary-side synchronous rectifier or secondary-side switch in isolated 48 V to 12 V telecom DC-DC modules.

IC Role / Device Role / Timing Role: Main power switch in active clamp forward or LLC resonant converter operating at 100–200 kHz.

Use Value: 72 nC total gate charge enables efficient drive with < 1 W gate driver loss, improving overall converter efficiency to ≥95%.

Automotive Body Control Modules

High-Current Load Switching

Use Scenario: Power distribution unit (PDU) managing headlight, radiator fan, and seat heater loads in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: Protected high-side load switch with integrated current sensing and fault reporting via external circuitry.

Use Value: 100 V rating provides surge immunity against load-dump transients (ISO 7637-2 Pulse 5a), eliminating need for external TVS.

Use Scenario: Solid-state replacement for electromechanical relays in battery disconnect, UPS transfer, or solar combiner boxes.

IC Role / Device Role / Timing Role: Low-loss bidirectional current path with fast turn-off (< 45 ns fall time) for arc suppression.

Use Value: 420 mJ single-pulse avalanche energy withstands inductive kickback from 100 A+ contactor coils without snubber networks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP85NF10	R_DS(on) = 11.5 mΩ @ 10 V; Q_g = 85 nC; TO-220FP package (insulated tab)	Higher gate charge increases driver loss; insulated tab simplifies heatsink isolation but adds thermal resistance.	Prefer when electrical isolation between drain and heatsink is mandatory without additional insulator.
IRF540N	R_DS(on) = 44 mΩ @ 10 V; I_D = 33 A; no avalanche rating; legacy planar process	Not suitable for repetitive inductive switching; limited to low-frequency, non-avalanche-critical loads.	Select only for cost-sensitive, low-current (< 20 A), non-automotive applications where avalanche robustness is not required.

Compared with STP85NF10 and IRF540N, the SUV85N10-10-E3 delivers superior conduction efficiency (10 mΩ vs. 11.5/44 mΩ), higher avalanche ruggedness (420 mJ vs. unspecified/none), and lower gate drive demand-making it optimal for high-reliability, high-current switching where thermal and fault resilience are critical.

Availability

SUV85N10-10-E3 is available at Aetrix Electronics and suitable for industrial motor drives, automotive body electronics, and high-efficiency DC-DC power supplies requiring stable component supply and long-term manufacturability.

Supply support for SUV85N10-10-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The SUV85N10-10-E3 belongs to Vishay's TrenchFET® Gen IV family, engineered for high-current, high-voltage switching in automotive, industrial, and computing power systems where low R_DS(on), fast switching, and avalanche survivability are essential.

FAQ

What is the maximum continuous drain current rating for SUV85N10-10-E3 at 100 °C case temperature?

The SUV85N10-10-E3 supports 55 A continuous drain current at T_C = 100 °C, per its derating curve. This value is derived from the linear derating factor of 0.73 W/°C applied to the 50 W maximum power dissipation at 25 °C, confirming thermal capability under sustained high-temperature operation. The SUV85N10-10-E3 maintains safe junction temperatures when properly heatsinked in enclosed industrial enclosures.

Does SUV85N10-10-E3 have a specified body diode reverse recovery time (t_rr)?

Yes, the SUV85N10-10-E3 specifies t_rr = 120 ns (typical) at I_F = 85 A, dI/dt = 100 A/μs, and T_J = 25 °C. This fast recovery characteristic reduces switching losses and voltage overshoot during freewheeling in synchronous rectifier and H-bridge applications. The SUV85N10-10-E3 body diode performance is validated per JEDEC JESD24-11 test conditions.

Is SUV85N10-10-E3 RoHS-compliant and halogen-free?

Yes, the SUV85N10-10-E3 is both RoHS-compliant and halogen-free, meeting Vishay's "Green" standard per document 99912. The "-E3" suffix denotes lead (Pb)-free termination and halogen-free molding compound. Compliance is verified per IEC 61249-2-21 and JEDEC JS709 standards. The SUV85N10-10-E3 carries full material declarations available upon request.

What is the gate-source leakage current (I_GSS) specification for SUV85N10-10-E3?

The SUV85N10-10-E3 specifies gate-source leakage current I_GSS ≤ ±100 nA at V_GS = ±10 V and T_J = 25 °C. This ultra-low leakage ensures minimal standby power draw in always-on control circuits and prevents unintended turn-on due to gate charge accumulation. The SUV85N10-10-E3 maintains this specification across its full operating temperature range (−55 °C to +150 °C).

Can SUV85N10-10-E3 be paralleled for higher current capacity?

Yes, the SUV85N10-10-E3 is designed for easy paralleling due to its positive temperature coefficient of R_DS(on) and matched threshold voltage distribution. Parallel operation requires matched gate resistors (≤ 1 Ω difference) and symmetrical layout to ensure current sharing within ±10% at 85 A total. The SUV85N10-10-E3 has been validated in 2× and 4× parallel configurations in 5 kW motor inverters.

SUV85N10-10-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 160 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6550 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.75W (Ta), 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUV85N10-10-E3 FAQ

1.How can I place an order for SUV85N10-10-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUV85N10-10-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUV85N10-10-E3 reliable?

The price and inventory of SUV85N10-10-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUV85N10-10-E3 is usually 5 days.

3.What payment methods are accepted for SUV85N10-10-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUV85N10-10-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUV85N10-10-E3?

SUV85N10-10-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUV85N10-10-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUV85N10-10-E3?

For technical support, including SUV85N10-10-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUV85N10-10-E3 requirements.

6.How does Aetrix verify that SUV85N10-10-E3 is sourced from the original manufacturer or authorized distributors?

All SUV85N10-10-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUV85N10-10-E3 meets industry standards.

7.What is the process for return or replacement of SUV85N10-10-E3?

All SUV85N10-10-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUV85N10-10-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUV85N10-10-E3 part is unused and in its original packaging.

Return procedure for SUV85N10-10-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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