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onsemi SZESD1014MUTAG

Part No.:
SZESD1014MUTAG
Manufacturer:
onsemi
Category:
TVS Diodes
Package:
10-UFDFN Exposed Pad
Datasheet:
AetrixSZESD1014MUTAG.pdf
Description:
4 LINE SURGE RATED RAIL-RAIL PRO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,000

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Product details

Overview

SZESD1014MUTAG from onsemi is a low-capacitance ESD protection diode array designed for high-speed data line protection, featuring 5.0 V breakdown voltage (VBR), ≤5.0 pF junction capacitance between I/O and GND, and 30 kV IEC 61000−4−2 contact ESD rating - deployed in USB 2.0, Gigabit Ethernet, and DVI interfaces.

For engineers reviewing the SZESD1014MUTAG datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage at 1 A (6.2 V), reverse working voltage (3.3 V), automotive-grade AEC−Q101 qualification, UDFN10 package footprint, and I/O-to-GND capacitance critical for signal integrity in >480 Mbps data paths.

Technical Context

This device implements a monolithic silicon avalanche diode array in a single UDFN10 package with five I/O lines, one VP supply pin, and an exposed thermal pad connected to GND. It operates as a bidirectional transient voltage suppressor with symmetrical clamping behavior across all I/O pins relative to ground.

The architecture supports simultaneous protection of multiple high-speed differential or single-ended lines without signal coupling, enabled by low inter-pin capacitance (≤3.0 pF I/O-to-I/O) and fast response time (<1 ns). Its 8/20 µs pulse handling capability (30 A peak) meets IEC 61000−4−2 Level 4 and IEC 61000−4−4 EFT requirements.

Key Specifications

ParameterValue and Actual Design Meaning
Breakdown Voltage (VBR)5.0–5.3 V at 1 mA - ensures reliable turn-on before damage to downstream 3.3 V logic.
Reverse Working Voltage (VRWM)3.3 V - matches standard USB 2.0 and Gigabit Ethernet DC bias levels.
Junction Capacitance (CJ)3.8–5.0 pF (I/O-to-GND @ 0 V, 1 MHz) - preserves signal integrity up to 1 GHz.
Clamping Voltage (VC)6.2 V @ 1 A (Pin 5 to GND) - limits transients below 6.5 V threshold of typical 3.3 V I/O cells.
ESD Rating (IEC 61000−4−2)30 kV contact discharge - exceeds Level 4 immunity for industrial and automotive ports.
Peak Pulse Current (IPP)30 A (8/20 µs waveform) - sustains multi-event surge stress in telecom and networking equipment.
Operating Temperature−40 °C to +125 °C - supports under-hood automotive and industrial ambient conditions.

Pinout & Package

Package: UDFN10 (2.6 mm × 2.6 mm, 0.5 mm pitch), thermally enhanced with exposed GND pad (Case 517AN).

Pin/TerminalCircuit RoleDesign Meaning
1, 3, 7, 9I/OFour independent protected data lines - each bidirectionally clamped to GND.
2, 4, 6, 8, 10N/CNo-connect terminals - electrically isolated; no internal connection or routing.
5VPPositive supply rail input - enables active clamping control for higher-energy transients.
Bottom PadGNDThermal and electrical reference plane - must be soldered for rated power dissipation and ESD path integrity.

Key Features

FeatureDesign Value
AEC−Q101 qualifiedValidated for automotive electronics per stress test requirements - supports infotainment and ADAS interface protection.
Pb−Free UDFN10 packageRoHS-compliant 2.6×2.6 mm footprint with 0.5 mm pitch - compatible with standard SMT reflow profiles.
Low I/O-to-GND capacitanceMax 5.0 pF enables use in USB 2.0 (480 Mbps), DVI, and Gigabit Ethernet without signal degradation.
30 kV IEC contact ESD ratingMeets highest industrial port immunity class - eliminates need for secondary board-level protection.
Clamping voltage ≤6.2 V @ 1 AProtects 3.3 V I/O structures without overstressing gate oxides or latch-up triggers.

Applications

USB 2.0 Interface ProtectionGigabit Ethernet PHY Protection

Use Scenario: Protecting D+ and D− lines of USB 2.0 host/device ports against user-handling ESD events.

IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed directly at connector entry point.

Use Value: 5.0 pF capacitance prevents signal rise-time degradation; 6.2 V clamping avoids violation of 3.3 V I/O absolute maximum ratings.

Use Scenario: Shielding MDI differential pairs and associated bias lines in 1000BASE-T Ethernet PHYs.

IC Role / Device Role / Timing Role: Low-capacitance parallel clamp on each conductor pair to maintain impedance continuity.

Use Value: ≤3.0 pF I/O-to-I/O capacitance preserves 100 Ω differential impedance; 30 kV ESD rating satisfies EN 61000-4-2 compliance testing.

DVI/HDMI Source Port ProtectionAutomotive Infotainment Display Link

Use Scenario: Safeguarding TMDS clock and data channels in digital video interface outputs.

IC Role / Device Role / Timing Role: Per-channel ESD clamp with minimal added jitter and skew.

Use Value: Sub-5 pF loading maintains <10 ps channel-to-channel skew budget; 30 A peak current handles lightning-induced surges.

Use Scenario: Protecting LVDS or FPD-Link II serial video bus lines between head unit and display.

IC Role / Device Role / Timing Role: AEC−Q101-qualified array suppressing ESD during vehicle assembly and service.

Use Value: −40 °C to +125 °C operation covers full automotive temperature range; UDFN10 footprint minimizes PCB area in space-constrained dash modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TPD4E05U06DQAR4-channel, 0.5 pF lower max I/O-GND capacitance (4.5 pF), same 3.3 V VRWM, but only 15 kV IEC contact rating.Preferred for ultra-high-speed SerDes links (>5 Gbps) where sub-4.5 pF is mandatory; insufficient for 30 kV industrial port compliance.Select when signal bandwidth >3 GHz dominates over system-level ESD robustness.
ESD5V3U1U-2/TRSingle-line device in SOD-523; 5.5 V VBR, 12 kV IEC contact rating, 12 pF max capacitance - not a functional replacement.Used for cost-sensitive, low-density protection; requires four discrete placements vs. single UDFN10 for four lines.Choose only for non-critical consumer ports where layout area and 30 kV immunity are not required.

Compared with TPD4E05U06DQAR and ESD5V3U1U-2/TR, SZESD1014MUTAG uniquely balances 30 kV system-level ESD immunity, 5.0 pF signal loading, and quad-channel integration in automotive-qualified UDFN10 - making it optimal for USB 2.0, DVI, and Gigabit Ethernet designs requiring both speed and ruggedness.

Availability

SZESD1014MUTAG is available at Aetrix Electronics and suitable for USB 2.0 interface protection, Gigabit Ethernet PHY safeguarding, and automotive infotainment display link applications requiring stable component supply and long-term lifecycle support.

Supply support for SZESD1014MUTAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, high-performance silicon solutions for automotive, industrial, cloud, medical, and IoT applications.

SZESD1014MUTAG belongs to onsemi's ESD protection diode array product line, engineered specifically for high-speed data line immunity in automotive and industrial systems where low capacitance, AEC−Q101 qualification, and IEC 61000−4−2 Level 4 compliance are mandatory.

FAQ

What is the maximum clamping voltage of SZESD1014MUTAG at 10 A peak pulse current?

The clamping voltage of SZESD1014MUTAG is 9.0 V when tested at 10 A peak pulse current (8/20 µs waveform) on any I/O pin to GND. This value is specified in the Electrical Characteristics table and ensures safe operation within the 3.3 V I/O tolerance margin of modern transceivers. The SZESD1014MUTAG maintains consistent clamping performance across its rated current range, supporting robust surge handling in real-world Ethernet and USB applications.

Is SZESD1014MUTAG suitable for protecting HDMI 1.4 TMDS lines?

Yes, SZESD1014MUTAG is suitable for HDMI 1.4 TMDS line protection due to its ≤5.0 pF I/O-to-GND capacitance and 3.3 V reverse working voltage, which align with HDMI 1.4 DC bias and bandwidth requirements. Its 30 kV IEC 61000−4−2 rating exceeds typical HDMI port immunity needs. The SZESD1014MUTAG's quad-channel configuration allows protection of three TMDS data pairs plus clock using a single device, minimizing board space versus discrete solutions.

Does SZESD1014MUTAG require external biasing or control signals?

No, SZESD1014MUTAG operates passively and requires no external biasing, control signals, or power supply beyond the VP pin, which is internally tied to the protection network and must be connected to the local 3.3 V rail. All I/O pins function bidirectionally without polarity constraints. The SZESD1014MUTAG integrates all necessary avalanche structures monolithically - simplifying design and eliminating configuration overhead in USB, Ethernet, or DVI layouts.

What is the thermal pad connection requirement for SZESD1014MUTAG?

The exposed bottom thermal pad of SZESD1014MUTAG must be soldered to a solid GND plane to ensure rated 450 W peak power dissipation and effective heat transfer during ESD events. Thermal vias beneath the pad are recommended to enhance thermal conduction to inner-layer ground planes. Failure to connect the pad compromises both clamping consistency and reliability - the SZESD1014MUTAG's datasheet specifies this as mandatory for compliance with AEC−Q101 stress testing and IEC surge standards.

How does the AEC−Q101 qualification impact SZESD1014MUTAG's use in non-automotive applications?

AEC−Q101 qualification certifies SZESD1014MUTAG for extended temperature operation (−40 °C to +125 °C), enhanced reliability, and rigorous stress testing - benefits that directly improve field robustness in industrial, networking, and medical equipment. While not required outside automotive, the SZESD1014MUTAG's qualification provides design margin for harsh environments. Customers deploying SZESD1014MUTAG in base stations or factory automation gain proven longevity without additional qualification effort.

SZESD1014MUTAG Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Package/Case:
10-UFDFN Exposed Pad
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Steering (Rail to Rail)
Unidirectional Channels:
4
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
3.3V (Max)
Voltage - Breakdown (Min):
5V
Voltage - Clamping (Max) @ Ipp:
11V
Current - Peak Pulse (10/1000µs):
30A (8/20µs)
Power - Peak Pulse:
450W
Power Line Protection:
Yes
Applications:
-
Capacitance @ Frequency:
3.8pF @ 1MHz
Operating Temperature:
-40°C ~ 125°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
10-UDFN (2.6x2.6)

SZESD1014MUTAG FAQ

1.How can I place an order for SZESD1014MUTAG through Aetrix?

Please submit a Request for Quotation (RFQ) for SZESD1014MUTAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SZESD1014MUTAG reliable?

The price and inventory of SZESD1014MUTAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SZESD1014MUTAG is usually 5 days.

3.What payment methods are accepted for SZESD1014MUTAG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SZESD1014MUTAG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SZESD1014MUTAG?

SZESD1014MUTAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SZESD1014MUTAG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SZESD1014MUTAG?

For technical support, including SZESD1014MUTAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SZESD1014MUTAG requirements.

6.How does Aetrix verify that SZESD1014MUTAG is sourced from the original manufacturer or authorized distributors?

All SZESD1014MUTAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SZESD1014MUTAG meets industry standards.

7.What is the process for return or replacement of SZESD1014MUTAG?

All SZESD1014MUTAG units undergo pre-shipment inspection (PSI). If there is an issue with SZESD1014MUTAG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SZESD1014MUTAG part is unused and in its original packaging.

Return procedure for SZESD1014MUTAG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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