onsemi SZESD7241N2T5G

Overview

SZESD7241N2T5G from onsemi is a bi-directional ESD protection diode in X2DFN2 package, designed for ultra-low-capacitance RF signal line protection with 0.7 pF capacitance at 1 GHz, 38 V clamping voltage at 8 A TLP, and ±28 kV IEC61000-4-2 contact ESD rating - deployed in antenna feed lines of 5G handsets and NFC interfaces.

For engineers reviewing the SZESD7241N2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include sub-1.0 pF capacitance stability over bias, <0.6 dB insertion loss at 3 GHz, 24 V working voltage, and AEC-Q101 qualification for automotive RF front-end use.

Technical Context

This device implements a silicon avalanche diode structure optimized for low dynamic impedance (0.84 Ω) and linear CV response across 0–24 V reverse bias, enabling minimal RF signal distortion in high-frequency paths. Its bi-directional clamping behavior ensures symmetrical protection against both positive and negative transients without polarity dependence.

The X2DFN2 package features 0.65 mm pitch, 1.00 × 0.60 mm footprint, and wettable flank–compatible geometry (though not the MXWT5G variant), supporting automated optical inspection and high-density RF layout. Thermal resistance is 400 °C/W junction-to-ambient under standard FR-4 mounting.

Key Specifications

Pinout & Package

X2DFN2 package: 2-terminal, 1.00 mm × 0.60 mm × 0.37 mm body, 0.65 mm lead pitch, Pb-free, RoHS-compliant. Terminals are non-polarized and functionally symmetric for bi-directional ESD suppression.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESD7205MUTAG and SP1003-01UTG, SZESD7241N2T5G uniquely balances 24 V working voltage, ±28 kV ESD robustness, and 0.7 pF RF transparency - making it the only qualified option for 5G antenna line protection where voltage rating, frequency response, and automotive qualification intersect.

Availability

SZESD7241N2T5G is available at Aetrix Electronics and suitable for 5G handset antenna protection, NFC interface hardening, and automotive V2X RF port safeguarding requiring stable component supply across high-volume production cycles.

Supply support for SZESD7241N2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

SZESD7241N2T5G belongs to onsemi's ESD72xx family of ultra-low-capacitance TVS diodes engineered specifically for RF front-end protection - targeting design-in requirements for next-generation wireless handsets, telematics, and high-frequency IoT systems.

FAQ

What is the maximum clamping voltage of SZESD7241N2T5G under IEC61000-4-2 8 kV contact discharge?

The SZESD7241N2T5G does not specify clamping voltage under the full IEC61000-4-2 waveform in its datasheet. Instead, it provides TLP-derived clamping: 38 V at 8 A and 48 V at 16 A. These values correlate to the peak current portion of an 8 kV ESD event and serve as the engineering basis for system-level protection design. Actual oscilloscope waveforms for ±8 kV contact discharge are shown in Figures 7 and 8 of the SZESD7241N2T5G datasheet.

Is SZESD7241N2T5G compatible with reflow soldering per J-STD-020?

Yes, SZESD7241N2T5G is rated for lead solder temperature up to 260 °C for 10 seconds, fully compliant with J-STD-020 moisture sensitivity level (MSL) 1 requirements. The X2DFN2 package uses Pb-free terminations and supports standard SnAgCu reflow profiles with peak temperatures ≤260 °C and time above liquidus (TAL) ≤60 seconds - verified in onsemi's package reliability testing.

Does SZESD7241N2T5G support bi-directional signal paths such as RF differential pairs?

Yes, SZESD7241N2T5G is inherently bi-directional due to its symmetrical silicon avalanche structure. It provides identical clamping performance from Terminal 1 to Terminal 2 and Terminal 2 to Terminal 1, as confirmed by separate TLP IV curves in Figures 11 and 12 of the datasheet. This makes SZESD7241N2T5G suitable for protecting balanced RF lines like LTE MIMO antenna feeds without polarity concerns.

What is the leakage current specification for SZESD7241N2T5G at 24 V reverse bias?

The SZESD7241N2T5G specifies maximum reverse leakage current (IR) of 0.5 µA at VRWM = 24 V, measured per JEDEC JESD22-A114. This low leakage ensures negligible DC loading on RF bias networks and preserves quiescent current budgets in battery-powered 5G modules where the SZESD7241N2T5G is commonly deployed.

How does the capacitance of SZESD7241N2T5G vary with applied DC bias voltage?

SZESD7241N2T5G exhibits industry-leading capacitance linearity: 1.0 pF at 0 V, decreasing to 0.7 pF at 24 V reverse bias (per Figure 2). This monotonic, predictable CV curve minimizes detuning of impedance-matching networks in tunable antenna systems - a critical advantage over conventional ESD diodes whose capacitance may drop sharply near breakdown.