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onsemi SZESD7351HT1G
- Part No.:
- SZESD7351HT1G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- SC-76, SOD-323
- Datasheet:
-
SZESD7351HT1G.pdf
- Description:
- TVS DIODE 3.3VWM SOD323
- Quantity:
- Payment:
- Shipping:
Inventory:7,175
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Product details
Overview
SZESD7351HT1G from onsemi is a unidirectional ESD protection diode in SOD−323 package, featuring 3.3 V stand-off voltage, 0.6 pF max junction capacitance (I/O to GND), <1 ns response time, and IEC61000−4−2 Level 4 (±20 kV contact/air) compliance - designed for ultra-low-capacitance RF signal line protection in USB 2.0 high-speed and antenna interfaces.
For engineers reviewing the SZESD7351HT1G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage at 1 A (8.0 V), dynamic resistance (0.35 Ω), leakage current (<50 nA @ 3.3 V), AEC−Q101 qualification, and SOD−323 footprint compatibility with space-constrained RF layouts.
Technical Context
The SZESD7351HT1G is a single-channel, unidirectional TVS diode optimized for high-frequency signal integrity. Its low 0.43 pF typical capacitance at 0 V bias and stable sub-0.6 pF performance up to 1 GHz minimize insertion loss and signal distortion in RF paths.
It operates as a voltage-clamping device triggered above 5.0 V breakdown (IT = 1 mA), with clamping voltages of 8.0 V at 1 A and 10 V at 3 A per IEC61000−4−5 waveform - enabling robust transient suppression while maintaining low forward voltage drop (VF not specified, but implied by low RDYN).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Stand-off Voltage | 3.3 V - maximum continuous reverse voltage before conduction; ensures no interference with 3.3 V logic or RF bias rails. |
| Breakdown Voltage | 5.0 V min @ 1 mA - precise turn-on threshold guarantees early clamping during ESD transients. |
| Clamping Voltage | 8.0 V @ 1 A - limits peak voltage seen by protected IC during IEC61000−4−2 ESD event. |
| Junction Capacitance | 0.43–0.6 pF @ 0 V, 1 MHz–1 GHz - preserves signal integrity in USB 2.0 (480 Mbps) and cellular antenna lines. |
| Dynamic Resistance | 0.35 Ω - enables fast, low-impedance shunting of ESD current, reducing voltage overshoot. |
| ESD Rating | ±20 kV contact / ±20 kV air (IEC61000−4−2 Level 4) - meets highest system-level ESD immunity requirement. |
| Leakage Current | <50 nA @ 3.3 V - prevents DC loading of sensitive RF front-end or sensor bias networks. |
Pinout & Package
SZESD7351HT1G is housed in a Pb-free SOD−323 (Case 477) surface-mount package measuring 1.70 × 1.25 × 0.85 mm. The device uses a two-terminal unidirectional configuration with polarity band marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Banded) | Cathode | Connected to protected I/O line; conducts during positive transients when anode is grounded. |
| 2 | Anode | Connected to ground reference; establishes low-impedance path for ESD current dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.43 pF typical (0.6 pF max) - avoids resonance and attenuation in >100 MHz RF signal paths. |
| Sub-1 ns response | <1 ns turn-on time - intercepts ESD pulses before downstream ICs experience overstress. |
| AEC−Q101 qualified | Automotive-grade reliability with PPAP capability - supports deployment in infotainment and telematics modules. |
| Low dynamic resistance | 0.35 Ω - minimizes clamping voltage rise under high-current ESD events (e.g., 3 A). |
| Pb-free, RoHS compliant | Halogen-free/BFR-free construction - satisfies environmental compliance for global electronics manufacturing. |
Applications
| USB 2.0 High-Speed Data Lines | Cellular Antenna Feed Lines |
|---|---|
|
Use Scenario: Protecting D+ and D− differential pairs in portable USB peripherals against user-handling ESD. IC Role / Device Role / Timing Role: Unidirectional clamping diode placed between data line and ground, operating below 3.3 V system rail. Use Value: 0.6 pF capacitance prevents signal integrity degradation at 480 Mbps, while 8.0 V clamping safeguards USB transceivers. |
Use Scenario: Shielding LTE/5G antenna switch outputs from ESD during SIM card insertion or housing contact. IC Role / Device Role / Timing Role: Low-capacitance shunt protector on RF transmit/receive path, referenced to RF ground plane. Use Value: Sub-0.6 pF capacitance maintains VSWR and return loss; ±20 kV ESD rating exceeds handheld device requirements. |
| NFC Antenna Circuits | RF Front-End Switching Paths |
|
Use Scenario: Safeguarding 13.56 MHz NFC loop antennas and matching networks from electrostatic discharge. IC Role / Device Role / Timing Role: Series-connected ESD clamp on antenna feed, leveraging low leakage (<50 nA) to avoid detuning. Use Value: 0.43 pF typical capacitance ensures minimal impact on resonant frequency stability and coupling efficiency. |
Use Scenario: Protecting SPDT/SP4T RF switches in smartphone diversity receive chains from board-level ESD. IC Role / Device Role / Timing Role: Ground-referenced shunt diode on RF input/output pins, activated only during overvoltage events. Use Value: 0.35 Ω dynamic resistance enables rapid energy diversion without degrading isolation or insertion loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD7351HT1G | Same die, non-automotive grade; identical electrical specs and SOD−323 package. | No AEC−Q101 qualification or PPAP support; suitable for consumer/commercial use only. | Select when automotive qualification is unnecessary and cost sensitivity is higher. |
| TPD2E001DRYR | 0.8 pF max capacitance, 5.5 V stand-off, 12 V clamping @ 1 A; dual-channel in SOT−563. | Higher capacitance limits use to lower-frequency interfaces (e.g., I²C); dual-channel reduces component count. | Choose for multi-line protection where 0.8 pF is acceptable and dual-channel layout simplifies routing. |
Compared with ESD7351HT1G and TPD2E001DRYR, the SZESD7351HT1G offers the lowest capacitance (0.6 pF max) and automotive qualification, making it optimal for high-frequency, safety-critical RF paths where signal fidelity and AEC−Q101 compliance are mandatory.
Availability
SZESD7351HT1G is available at Aetrix Electronics and suitable for USB 2.0 interface protection, cellular antenna line safeguarding, and NFC circuit ESD hardening requiring stable component supply across production ramps and long-lifecycle programs.
Supply support for SZESD7351HT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The SZESD7351HT1G belongs to onsemi's ESD7351 Series - engineered specifically for ultra-low-capacitance, high-reliability ESD protection in RF-sensitive applications such as mobile antenna systems and high-speed serial interfaces.
FAQ
What is the clamping voltage of SZESD7351HT1G at 1 A and 3 A?
The SZESD7351HT1G has a clamping voltage of 8.0 V at 1 A and 10 V at 3 A under IEC61000−4−5 waveform conditions. These values reflect its ability to limit transient overvoltage during ESD events while maintaining low dynamic resistance (0.35 Ω), ensuring robust protection for downstream RF ICs without excessive voltage overshoot. The SZESD7351HT1G datasheet specifies these parameters at TA = 25°C.
Is SZESD7351HT1G qualified for automotive applications?
Yes, SZESD7351HT1G is AEC−Q101 qualified and PPAP capable, as confirmed in the official onsemi datasheet (Rev. 6, February 2024). The "SZ" prefix explicitly denotes automotive-grade variants meeting stringent reliability, temperature (−55°C to +150°C), and process control requirements. This makes SZESD7351HT1G suitable for infotainment, telematics, and ADAS subsystems where ESD protection must survive harsh environments.
What package type does SZESD7351HT1G use, and what are its dimensions?
SZESD7351HT1G uses the SOD−323 package (Case 477), with mechanical dimensions of 1.70 mm × 1.25 mm × 0.85 mm. It features a two-terminal, unidirectional configuration with cathode marked by a polarity band on pin 1. This compact footprint supports high-density PCB layouts in space-constrained RF modules and mobile devices where board area is at a premium.
How does the capacitance of SZESD7351HT1G affect high-frequency signal integrity?
SZESD7351HT1G delivers 0.43 pF typical (0.6 pF max) junction capacitance at 0 V bias, measured from I/O to GND. This ultra-low value minimizes insertion loss and phase distortion in signals up to 1 GHz - critical for USB 2.0 (480 Mbps), LTE antenna feeds, and NFC (13.56 MHz) circuits. The SZESD7351HT1G maintains stable capacitance across frequency, preserving impedance matching and return loss in RF front-ends.
What is the leakage current specification for SZESD7351HT1G at its stand-off voltage?
SZESD7351HT1G exhibits a maximum reverse leakage current of 50 nA at its 3.3 V working peak reverse voltage (VRWM), with typical values below 1.0 nA. This low leakage prevents unintended loading of bias networks in RF amplifiers, antenna tuners, or sensor interfaces - ensuring stable DC operating points and avoiding drift in precision analog paths. The SZESD7351HT1G datasheet confirms this under TA = 25°C conditions.
SZESD7351HT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- SC-76, SOD-323
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 5V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- RF Antenna
- Capacitance @ Frequency:
- 0.43pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-323
SZESD7351HT1G FAQ
1.How can I place an order for SZESD7351HT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for SZESD7351HT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SZESD7351HT1G reliable?
The price and inventory of SZESD7351HT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SZESD7351HT1G is usually 5 days.
3.What payment methods are accepted for SZESD7351HT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SZESD7351HT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SZESD7351HT1G?
SZESD7351HT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SZESD7351HT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SZESD7351HT1G?
For technical support, including SZESD7351HT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SZESD7351HT1G requirements.
6.How does Aetrix verify that SZESD7351HT1G is sourced from the original manufacturer or authorized distributors?
All SZESD7351HT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SZESD7351HT1G meets industry standards.
7.What is the process for return or replacement of SZESD7351HT1G?
All SZESD7351HT1G units undergo pre-shipment inspection (PSI). If there is an issue with SZESD7351HT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SZESD7351HT1G part is unused and in its original packaging.
Return procedure for SZESD7351HT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SZESD7351HT1G Tags
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