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onsemi SZESD7351XV2T5G
- Part No.:
- SZESD7351XV2T5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- SC-79, SOD-523
- Datasheet:
-
SZESD7351XV2T5G.pdf
- Description:
- TVS DIODE 3.3VWM 10VC SOD523
- Quantity:
- Payment:
- Shipping:
Inventory:5,438
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Product details
Overview
SZESD7351XV2T5G from onsemi is a unidirectional ESD protection diode in SOD−523 package, featuring 3.3 V stand-off voltage, 0.6 pF max junction capacitance at 1 MHz, 8.0 V clamping voltage at 1 A IPP, <1.0 nA reverse leakage at VRWM, and <1 ns response time-designed for RF antenna line and USB 2.0 high-speed interface protection.
For engineers reviewing the SZESD7351XV2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low capacitance for signal integrity, IEC61000−4−2 Level 4 (±20 kV contact/air) compliance, AEC−Q101 qualification for automotive use, and SOD−523 footprint constraints in space-constrained layouts.
Technical Context
This device operates as a unidirectional transient voltage suppressor with cathode-anode polarity, leveraging silicon avalanche breakdown to clamp ESD transients before sensitive RF front-end components. Its low dynamic resistance (<0.35 Ω) and sub-1 ns response ensure minimal voltage overshoot during fast-rising ESD events per IEC61000−4−2.
The 3.3 V working peak reverse voltage aligns with 3.3 V logic and RF bias rails, while its 5.0 V typical breakdown voltage at 1 mA provides margin above VRWM. Capacitance remains stable below 0.6 pF up to 1 GHz, preserving impedance matching in antenna and high-frequency signal paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Stand-off Voltage | 3.3 V - Blocks normal 3.3 V system bias without conduction |
| Clamping Voltage | 8.0 V @ 1 A IPP - Limits transient voltage to safe level for downstream ICs |
| Junction Capacitance | 0.43–0.6 pF @ 0 V, 1 MHz–1 GHz - Minimizes signal distortion in RF/USB 2.0 lines |
| Reverse Leakage | <1.0 nA @ 3.3 V - Prevents DC loading on sensitive RF bias nodes |
| ESD Rating | ±20 kV contact/air (IEC61000−4−2 Level 4) - Meets industrial and automotive immunity requirements |
| Response Time | <1 ns - Engages before ESD pulse peak reaches protected circuitry |
| Dynamic Resistance | 0.35 Ω - Reduces clamping voltage rise under high-current transients |
Pinout & Package
SZESD7351XV2T5G is housed in a Pb-free, halogen-free SOD−523 package (1.20 × 0.80 × 0.60 mm), optimized for ultra-compact PCB layouts and automated placement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode | Connected to protected I/O line; conducts during positive ESD event on I/O |
| Pin 2 | Anode | Connected to GND; completes clamping path during ESD discharge |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.43 pF typical at 0 V - Enables use on 480 Mbps USB 2.0 and multi-GHz antenna traces without insertion loss degradation |
| AEC−Q101 qualified | Validated for automotive temperature range (−55 °C to +150 °C) and reliability stress tests - supports infotainment and ADAS RF modules |
| Low clamping voltage | 8.0 V @ 1 A - Protects 3.3 V I/O pins of baseband processors and RF transceivers within safe voltage margins |
| Fast response time | <1 ns - Activates ahead of IEC61000−4−2 0.7–1 ns rise-time waveform peak |
| Pb-free & RoHS compliant | Meets global environmental regulations and reflow soldering standards (260 °C, 10 s) - compatible with lead-free assembly processes |
Applications
| RF Antenna Line Protection | USB 2.0 High-Speed Interface |
|---|---|
Use Scenario: ESD protection on cellular/WiFi/GPS antenna feedlines in smartphones and IoT modules. IC Role / Device Role / Timing Role: Unidirectional clamping diode placed between antenna switch and transceiver RF port. Use Value: 0.43 pF capacitance preserves VSWR and return loss; ±20 kV ESD rating prevents latch-up or damage during handling and field operation. | Use Scenario: Signal line protection on D+ and D− differential pairs in portable USB peripherals and host controllers. IC Role / Device Role / Timing Role: Low-capacitance TVS diode connected from each data line to ground. Use Value: Sub-0.6 pF capacitance avoids signal edge degradation at 480 Mbps; 8.0 V clamping ensures PHY-level I/O stays within safe operating area. |
| NFC Circuit Protection | Automotive Infotainment RF Front-End |
Use Scenario: ESD safeguard for 13.56 MHz NFC reader/writer coils and matching networks. IC Role / Device Role / Timing Role: Bidirectional-capable unidirectional diode (cathode-to-line) guarding analog front-end inputs. Use Value: Low leakage (<1 nA) prevents DC offset drift in sensitive receiver amplifiers; AEC−Q101 qualification enables use in certified automotive NFC modules. | Use Scenario: Protection of LTE/V2X antenna ports and tuner inputs in automotive head units and telematics control units. IC Role / Device Role / Timing Role: Automotive-grade ESD suppressor mounted directly at RF connector entry point. Use Value: −55 °C to +150 °C operating range matches under-hood thermal profiles; 0.35 Ω dynamic resistance minimizes clamping voltage overshoot during load-dump-adjacent ESD events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD7351XV2T1G | Same electrical specs and SOD−523 package; differs only in reel quantity (3,000 vs. 8,000) | No functional difference; used where smaller batch procurement is preferred | Select when standard tape-and-reel volume (3k) better matches production planning cycles |
| TPD2E001DRYR | 0.8 pF max capacitance, 5.5 V stand-off, ±8 kV IEC61000−4−2 contact rating, SOT−553 package | Lower ESD rating and higher capacitance limit use to non-critical USB or GPIO lines | Choose only if lower cost or SOT−553 footprint compatibility outweighs need for ±20 kV and 0.6 pF performance |
Compared with ESD7351XV2T1G, SZESD7351XV2T5G offers identical protection performance but larger reel packaging for high-volume manufacturing; versus TPD2E001DRYR, it delivers superior ESD robustness and RF signal fidelity at the cost of tighter layout tolerance and higher unit price.
Availability
SZESD7351XV2T5G is available at Aetrix Electronics and suitable for RF antenna line protection, USB 2.0 high-speed interface safeguarding, and automotive infotainment RF front-end designs requiring stable component supply and AEC−Q101 assurance.
Supply support for SZESD7351XV2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The SZESD7351 Series is part of onsemi's ESD protection portfolio, engineered specifically for ultra-low-capacitance, high-frequency signal line protection in space-constrained, high-reliability systems including automotive RF modules and mobile connectivity interfaces.
FAQ
What is the primary function of the SZESD7351XV2T5G?
The SZESD7351XV2T5G is a unidirectional ESD protection diode designed to safeguard voltage-sensitive RF and high-speed digital signal lines from electrostatic discharge events. It clamps transient voltages to 8.0 V at 1 A peak pulse current while maintaining ultra-low 0.43–0.6 pF capacitance-ensuring signal integrity on antenna feeds and USB 2.0 differential pairs. Its SOD−523 footprint supports miniaturized PCB layouts.
Is SZESD7351XV2T5G qualified for automotive applications?
Yes, SZESD7351XV2T5G carries the "SZ" prefix indicating AEC−Q101 qualification and PPAP capability. It is rated for junction temperatures from −55 °C to +150 °C and meets IEC61000−4−2 Level 4 (±20 kV contact/air), making it suitable for automotive infotainment, telematics, and V2X RF front-end protection where reliability under harsh thermal and ESD conditions is mandatory.
What is the pin configuration and polarity of SZESD7351XV2T5G?
SZESD7351XV2T5G uses a 2-pin SOD−523 package with defined polarity: Pin 1 is the cathode (marked with polarity band), and Pin 2 is the anode. When installed, the cathode connects to the protected I/O line and the anode to ground-enabling unidirectional clamping of positive transients on the signal path while blocking normal 3.3 V bias current.
How does the capacitance of SZESD7351XV2T5G affect high-frequency performance?
SZESD7351XV2T5G exhibits 0.43 pF typical junction capacitance at 0 V bias and 1 MHz, rising only marginally to 0.6 pF up to 1 GHz. This ultra-low, frequency-stable capacitance prevents impedance mismatch and insertion loss degradation on RF antenna lines and USB 2.0 traces-preserving signal rise/fall times and eye diagram integrity at 480 Mbps and beyond.
What are the key differences between SZESD7351XV2T5G and ESD7351XV2T1G?
SZESD7351XV2T5G and ESD7351XV2T1G share identical electrical specifications, SOD−523 package, and AEC−Q101 qualification. The sole difference is packaging: SZESD7351XV2T5G ships in 8,000-unit tape-and-reel format, whereas ESD7351XV2T1G uses 3,000-unit reels. Both are drop-in replacements electrically and mechanically; selection depends solely on production volume and logistics requirements.
SZESD7351XV2T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- SC-79, SOD-523
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 5V
- Voltage - Clamping (Max) @ Ipp:
- 10V
- Current - Peak Pulse (10/1000µs):
- 3A
- Power - Peak Pulse:
- 36W
- Power Line Protection:
- No
- Applications:
- RF Antenna
- Capacitance @ Frequency:
- 0.43pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-523
SZESD7351XV2T5G FAQ
1.How can I place an order for SZESD7351XV2T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for SZESD7351XV2T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SZESD7351XV2T5G reliable?
The price and inventory of SZESD7351XV2T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SZESD7351XV2T5G is usually 5 days.
3.What payment methods are accepted for SZESD7351XV2T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SZESD7351XV2T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SZESD7351XV2T5G?
SZESD7351XV2T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SZESD7351XV2T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SZESD7351XV2T5G?
For technical support, including SZESD7351XV2T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SZESD7351XV2T5G requirements.
6.How does Aetrix verify that SZESD7351XV2T5G is sourced from the original manufacturer or authorized distributors?
All SZESD7351XV2T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SZESD7351XV2T5G meets industry standards.
7.What is the process for return or replacement of SZESD7351XV2T5G?
All SZESD7351XV2T5G units undergo pre-shipment inspection (PSI). If there is an issue with SZESD7351XV2T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SZESD7351XV2T5G part is unused and in its original packaging.
Return procedure for SZESD7351XV2T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SZESD7351XV2T5G Tags
-
ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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