onsemi SZESD7361XV2T1G

Overview

SZESD7361XV2T1G from onsemi is a unidirectional ESD protection diode in SOD−523 package, designed for high-speed data lines requiring ultra-low capacitance (0.55 pF max), 16 V working reverse voltage, and ±15 kV IEC 61000−4−2 contact ESD protection-used in NFC antenna interfaces and wireless charging coil signal paths.

For engineers reviewing the SZESD7361XV2T1G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage at 8 A (31 V), dynamic resistance (0.735 Ω), insertion loss at 5 GHz (2 dB), AEC−Q101 qualification, and SOD−523 footprint compatibility with space-constrained RF front-ends.

Technical Context

This device implements a single-channel unidirectional TVS structure optimized for RF-sensitive signal lines. Its low-junction-capacitance design minimizes signal distortion while maintaining robust transient suppression across IEC 61000−4−2, −4−4, and −4−5 standards.

The clamping behavior is characterized via TLP testing (Z₀ = 50 Ω, tₚ = 100 ns), delivering 31 V clamping at 8 A and 34 V at 16 A. Dynamic resistance of 0.735 Ω ensures rapid voltage stabilization during fast-rising ESD transients.

Key Specifications

Pinout & Package

SZESD7361XV2T1G is housed in a 2-pin SOD−523 surface-mount package (1.0 mm × 0.6 mm × 0.4 mm), optimized for high-density RF layouts and reflow-compatible assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESD7361HT1G and TPD2E001DRYR, SZESD7361XV2T1G uniquely balances sub-1.0 mm² area, 16 V VRWM, and 0.55 pF capacitance-making it optimal for miniaturized NFC/wireless charging modules where both voltage margin and RF transparency are critical.

Availability

SZESD7361XV2T1G is available at Aetrix Electronics and suitable for NFC antenna protection, wireless charging control interfaces, and automotive infotainment USB ports requiring stable component supply, long-term lifecycle support, and AEC−Q101–compliant sourcing.

Supply support for SZESD7361XV2T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in automotive, industrial, cloud, and IoT power and sensing solutions.

SZESD7361XV2T1G belongs to onsemi's ESD7361 series of ultra-low-capacitance TVS diodes, engineered specifically for protecting high-frequency analog and digital signal lines in portable, automotive, and industrial RF systems.

FAQ

What is the primary circuit role of SZESD7361XV2T1G in a design?

SZESD7361XV2T1G serves as a unidirectional shunt ESD protection device placed between a high-speed signal line and ground. It remains non-conductive under normal operation (VRWM = 16 V), then rapidly clamps transient voltages above breakdown (VBR = 16.5 V) to protect sensitive RF ICs. Its 0.55 pF capacitance ensures minimal impact on signal integrity in NFC and wireless charging applications.

Does SZESD7361XV2T1G meet automotive qualification standards?

Yes, SZESD7361XV2T1G is AEC−Q101 qualified and PPAP capable, with an operating junction temperature range of −55°C to +125°C. The "SZ" prefix explicitly denotes automotive-grade manufacturing controls and site-specific change management-making SZESD7361XV2T1G suitable for infotainment, telematics, and body electronics where ESD reliability is mandated.

What is the clamping voltage of SZESD7361XV2T1G under real-world ESD stress?

SZESD7361XV2T1G delivers 31 V clamping voltage at 8 A peak pulse current (IPP) and 34 V at 16 A, measured using TLP methodology (Z₀ = 50 Ω, 100 ns pulse). This clamping performance is validated per IEC 61000−4−2 Level 4 (±15 kV contact), ensuring downstream components like NFC controllers remain within safe voltage limits during ESD events.

Can SZESD7361XV2T1G be used on differential high-speed lines like USB 2.0?

SZESD7361XV2T1G is a single-channel unidirectional diode intended for single-ended signal-to-ground protection. For differential lines such as USB 2.0 D+/D−, two SZESD7361XV2T1G devices are required-one per line-or a dual-channel alternative like TPD2E001DRYR should be evaluated. Its 0.55 pF capacitance and 2 dB insertion loss at 480 MHz support USB 2.0 eye diagram compliance when applied per-line.

How does the SOD−523 package of SZESD7361XV2T1G compare to SOD−323 in layout impact?

The SOD−523 package of SZESD7361XV2T1G measures 1.0 mm × 0.6 mm × 0.4 mm-significantly smaller than the SOD−323 (1.70 mm × 1.25 mm × 0.85 mm). This enables tighter routing in space-constrained RF sections, reduces parasitic inductance, and improves high-frequency ESD response. However, thermal dissipation is lower, making SOD−523 optimal for low-duty-cycle ESD events rather than sustained power surges.