onsemi SZESD7371HT1G

Overview

SZESD7371HT1G from onsemi is a unidirectional ESD protection diode in SOD−323 package, featuring 0.7 pF max junction capacitance, 5.3 V stand-off voltage, and <1 nA reverse leakage at VRWM. It delivers 11–15 V clamping voltage at 1 A IPP and is AEC−Q101 qualified for automotive RF antenna line protection.

For engineers reviewing the SZESD7371HT1G datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low capacitance linearity over bias voltage, IEC61000−4−2 Level 4 (±8 kV contact) compliance, and SOD−323 footprint suitability for space-constrained RF front-end layouts.

Technical Context

This unidirectional TVS diode operates with reverse-biased junction behavior: clamping begins at 7.0 V breakdown (IT = 1 mA), sustains 5.3 V working peak reverse voltage, and maintains sub-1 nA leakage up to VRWM. Its dynamic resistance of 0.45 Ω enables fast transient response under IEC61000−4−2 stress.

The device leverages silicon planar construction optimized for RF signal integrity-capacitance remains stable from 0 V to 6 V bias (0.39–0.7 pF), minimizing insertion loss across 100 MHz–10 GHz bands. It is rated for ±8 kV contact/air discharge per IEC61000−4−2 and supports 3 A peak pulse current with 14–20 V clamping.

Key Specifications

Pinout & Package

SZESD7371HT1G is housed in a surface-mount SOD−323 package (Case 477), with cathode marked by polarity band. The two-terminal configuration supports unidirectional protection between I/O and ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESD7371HT1G and SP1001-01UTG, SZESD7371HT1G uniquely combines AEC−Q101 qualification, 5.3 V VRWM headroom, and verified 0.43 pF capacitance linearity - making it the only option qualified for automotive-grade RF antenna protection where both reliability and signal integrity are mandatory.

Availability

SZESD7371HT1G is available at Aetrix Electronics and suitable for automotive telematics, smartphone RF front-end, and industrial wireless terminal designs requiring stable component supply and long-term lifecycle assurance.

Supply support for SZESD7371HT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

SZESD7371HT1G belongs to the ESD7371/SZESD7371 Series - engineered specifically for ultra-low-capacitance ESD protection in RF signal paths, with emphasis on antenna line, switch, and NFC interface robustness.

FAQ

What is the primary circuit role of SZESD7371HT1G?

SZESD7371HT1G functions as a unidirectional shunt ESD protection diode, placed between an RF signal line and ground to clamp transient voltages above 5.3 V. Its low capacitance and fast response protect sensitive RF components like LNAs, PAs, and switches without degrading signal integrity. The SZESD7371HT1G achieves this via silicon planar junction design with 0.45 Ω dynamic resistance and sub-1 nA leakage.

Does SZESD7371HT1G meet automotive qualification standards?

Yes, SZESD7371HT1G is AEC−Q101 qualified and PPAP capable, validated for operation across −40°C to +125°C ambient temperature. This certification covers thermal cycling, humidity testing, and ESD survivability per automotive requirements. The SZESD7371HT1G is explicitly designated for automotive and other applications requiring unique site and control change protocols, as indicated by the "SZ" prefix.

What is the maximum clamping voltage of SZESD7371HT1G under IEC61000−4−2 stress?

SZESD7371HT1G clamps to 11–15 V at 1 A peak pulse current (IPP), corresponding to an 8 kV contact discharge event per IEC61000−4−2 Level 4. At 3 A IPP, clamping rises to 14–20 V. These values are measured using TLP methodology and reflect worst-case voltage seen by downstream circuitry during standardized ESD strikes - critical for ensuring safe operation of 3.3 V or 5 V RF ICs protected by SZESD7371HT1G.

Can SZESD7371HT1G be used on high-frequency signals above 3 GHz?

Yes, SZESD7371HT1G is characterized for stable performance up to 10 GHz, with capacitance varying only from 0.39 pF (0 V bias) to 0.7 pF (6 V bias). Measured RF insertion loss is <0.2 dB at 3.5 GHz and <0.5 dB at 6 GHz, confirming suitability for 5G NR, Wi-Fi 6E, and UWB antenna interfaces. The SZESD7371HT1G's linearity and low loss make it appropriate for direct placement on RF feedlines without matching network adjustment.

What package type and dimensions does SZESD7371HT1G use?

SZESD7371HT1G uses the SOD−323 package (Case 477), measuring 1.70 mm × 1.25 mm × 0.85 mm. It features a two-pin configuration with cathode identified by a polarity band. This compact footprint allows placement directly at RF connectors or IC pads, minimizing parasitic inductance. The SZESD7371HT1G's SOD−323 body is Pb-free, halogen-free, and RoHS compliant, supporting standard reflow profiles per J-STD-020.