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onsemi SZESD7371XV2T5G
- Part No.:
- SZESD7371XV2T5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- SC-79, SOD-523
- Datasheet:
-
SZESD7371XV2T5G.pdf
- Description:
- TVS DIODE 5.3VWM 20VC SOD523
- Quantity:
- Payment:
- Shipping:
Inventory:2,190
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Product details
Overview
SZESD7371XV2T5G from onsemi is a unidirectional ESD protection diode in SOD−523 package, featuring 0.7 pF max junction capacitance (at 0 V, 1 MHz), 5.3 V stand-off voltage, <1 nA reverse leakage at VRWM, 11–15 V clamping voltage at 1 A IPP, and IEC 61000−4−2 Level 4 (±8 kV contact) compliance - optimized for RF antenna line protection in space-constrained wireless handsets.
For engineers reviewing the SZESD7371XV2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low capacitance linearity over bias voltage, dynamic resistance under 1 Ω, AEC−Q101 qualification, and SOD−523 footprint compatibility with high-frequency signal integrity requirements.
Technical Context
This device operates as a unidirectional transient voltage suppressor with cathode-anode polarity, designed to clamp ESD transients before they reach sensitive RF front-end components. Its low dynamic resistance (<1 Ω) and fast response ensure minimal voltage overshoot during ±8 kV IEC 61000−4−2 events.
The capacitance remains stable (0.39–0.7 pF) from 0 V to >5 V bias and across 1 MHz–1 GHz frequency range, enabling use in antenna feedlines without degrading insertion loss or impedance matching. It is rated for 1000 ESD strikes and qualified per AEC−Q101 for automotive-grade reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance (CJ) | 0.39–0.7 pF @ 0 V, 1 MHz–1 GHz - preserves RF signal integrity in antenna paths with minimal phase distortion |
| Stand-off Voltage (VRWM) | 5.3 V - blocks normal operating voltage while allowing conduction above breakdown threshold |
| Clamping Voltage (VC) | 11–15 V @ 1 A IPP - limits transient voltage seen by protected ICs to safe levels during ESD events |
| Leakage Current (IR) | <1 nA @ 5.3 V - avoids DC loading of high-impedance RF nodes or battery-sensitive circuits |
| ESD Rating | IEC 61000−4−2 Level 4: ±8 kV contact / ±15 kV air - meets industrial and automotive system-level immunity requirements |
| Breakdown Voltage (VBR) | 7.0 V @ 1 mA - defines precise turn-on threshold for predictable clamping behavior |
| Dynamic Resistance (RDYN) | 0.45 Ω - ensures low-voltage drop during high-current transients, reducing energy dissipation in diode |
Pinout & Package
SZESD7371XV2T5G is housed in an SOD−523 surface-mount package (1.20 × 0.80 × 0.60 mm), optimized for RF layout density and thermal performance on thin PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Protected Line Input (Anode of internal PN junction) | Connected to RF signal path (e.g., antenna feed); clamps positive transients to GND when forward-biased |
| 2 (Anode) | Ground Reference | Low-inductance connection to system ground plane required for effective ESD current shunting |
Key Features
| Feature | Design Value |
|---|---|
| Capacitance linearity over voltage | Stable 0.39–0.7 pF across 0–5.3 V bias - maintains impedance match and minimizes harmonic distortion in RF switching paths |
| Ultra-low dynamic resistance | 0.45 Ω - reduces clamping voltage rise under high dI/dt ESD pulses, improving protection margin |
| AEC−Q101 qualification | Validated for automotive applications including infotainment antennas and telematics modules requiring extended temperature and lifetime reliability |
| Pb-free, Halogen-free, RoHS-compliant | Meets global environmental regulations and reflow soldering standards (260°C, 10 s) without compromising RF performance |
Applications
| Antenna Line Protection | RF Front-End Switching |
|---|---|
Use Scenario: Protecting LTE/5G antenna feedlines in smartphones and IoT terminals from user-hand ESD events. IC Role / Device Role / Timing Role: Unidirectional ESD clamp placed between antenna switch output and RF transceiver input. Use Value: 0.7 pF max capacitance prevents detuning of 700 MHz–6 GHz antenna matching networks while clamping ±8 kV transients below 15 V. |
Use Scenario: Safeguarding SPDT RF switches (e.g., Qorvo QM11027) against ESD during board handling and field operation. IC Role / Device Role / Timing Role: Low-capacitance shunt diode on RF signal path between switch and PA/LNA stages. Use Value: Sub-1 Ω dynamic resistance ensures clamping occurs within first 1 ns of ESD pulse, preventing gate oxide damage in GaAs/GaN switches. |
| NFC Interface Protection | USB 2.0 High-Speed Data Lines |
Use Scenario: Shielding 13.56 MHz NFC reader ICs (e.g., NXP PN7160) from electrostatic discharge during card tap events. IC Role / Device Role / Timing Role: Bidirectional-capable unidirectional diode (cathode to data line, anode to GND) on differential NFC interface. Use Value: 0.43 pF typical capacitance at 0 V preserves 13.56 MHz carrier amplitude and phase accuracy required for ISO/IEC 14443 compliance. |
Use Scenario: Protecting USB 2.0 D+/D− lines in portable accessories where board space limits use of larger TVS arrays. IC Role / Device Role / Timing Role: Single-line ESD suppressor placed inline with each data line prior to USB controller PHY. Use Value: 5.3 V stand-off allows full 480 Mbps signaling swing (±400 mV) without leakage-induced jitter or signal attenuation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD7371XV2T1G | Same electrical specs and SOD−523 package; differs only in reel quantity (3,000 vs. 8,000 units) | No functional difference; suitable for lower-volume prototyping or pilot runs | Select when smaller tape-and-reel quantities align with production planning or evaluation needs |
| ESD7371P2T5G | Identical electrical parameters but in smaller SOD−923 package (0.80 × 0.60 × 0.37 mm) | Better suited for ultra-dense layouts (e.g., wearables), though requires updated stencil and placement calibration | Choose when PCB real estate is constrained beyond SOD−523 capability and assembly process supports 0201-class placement |
Compared with SZESD7371XV2T5G, ESD7371XV2T1G offers identical protection performance with reduced packaging volume, while ESD7371P2T5G delivers further size reduction at the cost of tighter assembly tolerances - both retain full AEC−Q101 qualification and RF linearity.
Availability
SZESD7371XV2T5G is available at Aetrix Electronics and suitable for RF antenna protection, high-speed USB 2.0 interfaces, and NFC reader designs requiring stable component supply, consistent AEC−Q101 qualification, and ultra-low capacitance ESD suppression.
Supply support for SZESD7371XV2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
SZESD7371XV2T5G belongs to the ESD7371 Series - a family of ultra-low-capacitance, AEC−Q101-qualified ESD protection diodes engineered specifically for RF signal path integrity in next-generation wireless handsets and compact connected devices.
FAQ
What is the package type and dimensions of SZESD7371XV2T5G?
SZESD7371XV2T5G uses the SOD−523 package with mechanical dimensions of 1.20 mm × 0.80 mm × 0.60 mm. This ultra-compact outline enables placement directly adjacent to RF connectors and antenna switches without compromising board layout density. The device features cathode marking on pin 1 and is Pb-free, halogen-free, and RoHS-compliant.
Does SZESD7371XV2T5G meet automotive qualification standards?
Yes, SZESD7371XV2T5G is AEC−Q101 qualified and PPAP capable, confirming its suitability for automotive applications such as telematics antennas, infotainment RF modules, and ADAS sensor interfaces. The "SZ" prefix explicitly denotes automotive-grade manufacturing control and site-specific change management per onsemi's quality system.
What is the maximum clamping voltage of SZESD7371XV2T5G under ESD stress?
SZESD7371XV2T5G clamps to 11–15 V at 1 A peak pulse current (IPP), and up to 14–20 V at 3 A IPP, per IEC 61000−4−5 waveform testing. These values reflect actual measured voltage across the device during standardized ESD transients and define the upper voltage limit imposed on protected circuitry during ±8 kV contact discharge events.
Can SZESD7371XV2T5G be used for bidirectional signal lines like USB D+ and D−?
SZESD7371XV2T5G is unidirectional, with cathode (pin 1) connected to the signal line and anode (pin 2) to ground. For true bidirectional protection on differential lines, two devices are required - one per line - or a dedicated bidirectional array must be selected. Its low capacitance and leakage make it appropriate for individual high-speed data line protection when polarity is controlled.
How does the capacitance of SZESD7371XV2T5G vary with applied voltage?
SZESD7371XV2T5G exhibits industry-leading capacitance linearity: 0.39–0.7 pF across 0–5.3 V reverse bias, verified at 1 MHz and <1 GHz. This stability ensures minimal variation in impedance matching and insertion loss across operating voltage ranges - critical for maintaining return loss and VSWR in 5G antenna feedlines and RF switch paths.
SZESD7371XV2T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- SC-79, SOD-523
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5.3V (Max)
- Voltage - Breakdown (Min):
- 7V
- Voltage - Clamping (Max) @ Ipp:
- 20V
- Current - Peak Pulse (10/1000µs):
- 3A
- Power - Peak Pulse:
- 35W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 0.43pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-523
SZESD7371XV2T5G FAQ
1.How can I place an order for SZESD7371XV2T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for SZESD7371XV2T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SZESD7371XV2T5G reliable?
The price and inventory of SZESD7371XV2T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SZESD7371XV2T5G is usually 5 days.
3.What payment methods are accepted for SZESD7371XV2T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SZESD7371XV2T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SZESD7371XV2T5G?
SZESD7371XV2T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SZESD7371XV2T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SZESD7371XV2T5G?
For technical support, including SZESD7371XV2T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SZESD7371XV2T5G requirements.
6.How does Aetrix verify that SZESD7371XV2T5G is sourced from the original manufacturer or authorized distributors?
All SZESD7371XV2T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SZESD7371XV2T5G meets industry standards.
7.What is the process for return or replacement of SZESD7371XV2T5G?
All SZESD7371XV2T5G units undergo pre-shipment inspection (PSI). If there is an issue with SZESD7371XV2T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SZESD7371XV2T5G part is unused and in its original packaging.
Return procedure for SZESD7371XV2T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SZESD7371XV2T5G Tags
-
ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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