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onsemi SZESD7410MXWT5G
- Part No.:
- SZESD7410MXWT5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 2-XDFN
- Datasheet:
-
SZESD7410MXWT5G.pdf
- Description:
- TVS DIODE 8VWM 20VC 2X2DFNW
- Quantity:
- Payment:
- Shipping:
Inventory:15,725
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Product details
Overview
SZESD7410MXWT5G from onsemi is a bi-directional ultra-low capacitance ESD protection diode in a wettable flank X2DFNW2 package, rated for 9.5 V working reverse voltage, <1.0 pF max junction capacitance at 1 MHz, and ±30 kV IEC 61000-4-2 contact ESD immunity-designed specifically for RF antenna line protection in wireless handsets.
For engineers reviewing the SZESD7410MXWT5G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage under 8/20 µs pulse (18.4–19.4 V @ 5 A), insertion loss (0.1 dB @ 1 GHz), capacitance linearity over bias voltage, and AEC-Q101 qualification for automotive antenna modules.
Technical Context
The SZESD7410MXWT5G implements a bi-directional TVS structure optimized for RF signal integrity: its capacitance remains stable (<0.7 pF) from 0 V to 9.5 V bias, enabling minimal signal distortion in high-frequency paths. It delivers 136 W peak power dissipation with 6.4 A maximum peak pulse current per IEC 61000-4-2 8/20 µs waveform.
Clamping behavior is characterized via TLP testing (50 Ω, 100 ns pulse), showing 18 V clamping at +8 A and −18 V at −8 A, with dynamic resistance ≤1.0 Ω. The wettable flank X2DFNW2 package supports automated optical inspection and ensures reliable solder joint formation in fine-pitch RF layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Reverse Voltage | 9.5 V - sets maximum continuous RF signal swing before leakage rise or conduction onset |
| Junction Capacitance | 0.40 pF @ 1 MHz, 0.35 pF @ 1 GHz - enables minimal impedance mismatch in 50 Ω antenna traces up to 3 GHz |
| Clamping Voltage | 18.4–19.4 V @ 5 A, 8/20 µs - limits transient overvoltage to safe levels for downstream LNA or switch ICs |
| ESD Immunity | ±30 kV contact per IEC 61000-4-2 - exceeds Level 4 requirement for handheld device durability |
| Insertion Loss | 0.1 dB @ 1 GHz, 0.3 dB @ 3 GHz - preserves RF power transfer efficiency in active antenna front-ends |
| Leakage Current | <1.0 µA @ 9.5 V - avoids DC loading or bias shift in sensitive RF receiver paths |
| Package | X2DFNW2 (1.00 × 0.60 × 0.37 mm, 0.65 mm pitch) - wettable flank design enables AOI-compatible solder joint inspection |
Pinout & Package
X2DFNW2 is a 2-terminal, bi-directional surface-mount package with wettable flank side walls for optical solder inspection. Terminals are non-polarized and symmetrical.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Terminal 1 | Anode/Cathode (bi-directional) | Connects to protected RF line (e.g., antenna feed); no polarity assignment required |
| Terminal 2 | Anode/Cathode (bi-directional) | Connects to system ground; forms low-inductance path for ESD current return |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance linearity | Capacitance varies <±0.1 pF from 0–9.5 V bias - maintains consistent impedance matching across operating voltage range |
| Wettable flank terminals | Side-wall metallization enables automated optical inspection of solder fillets - critical for high-reliability RF module assembly |
| AEC-Q101 qualification | Validated for automotive-grade temperature cycling (−55 °C to +150 °C) and humidity exposure - suitable for telematics and V2X antenna protection |
| Low insertion loss | 0.1 dB loss at 1 GHz - preserves signal-to-noise ratio in LTE/5G sub-6 GHz front-end designs |
| Bi-directional clamping | Clamps both positive and negative transients symmetrically - protects against ESD events regardless of polarity on RF lines |
Applications
| RF Antenna Line Protection | Active Antenna Module Protection |
|---|---|
|
Use Scenario: Protecting main antenna feed line in 4G/5G smartphones from user-handling ESD events during daily use. IC Role / Device Role / Timing Role: Bi-directional shunt ESD clamp placed directly at antenna connector interface, before LNA input. Use Value: 0.35 pF capacitance at 1 GHz prevents detuning of matching network; ±30 kV immunity ensures >99.9% field reliability without performance degradation. |
Use Scenario: Safeguarding integrated active antenna units in automotive ADAS radar systems exposed to harsh ESD environments. IC Role / Device Role / Timing Role: Primary ESD suppression element on transmit/receive RF path between MMIC and antenna array. Use Value: AEC-Q101 qualification guarantees operation across −40 °C to +105 °C ambient; wettable flank package supports zero-defect AOI in automated SMT lines. |
| NFC Antenna Interface Protection | Wireless Earbud Antenna Protection |
|
Use Scenario: Shielding 13.56 MHz NFC loop antenna traces from electrostatic discharge during insertion/removal of payment cards or tags. IC Role / Device Role / Timing Role: Low-capacitance shunt diode placed inline between NFC controller and antenna coil. Use Value: 0.40 pF capacitance avoids resonance shift in tuned LC circuit; 0.1 dB insertion loss preserves coupling efficiency and read range. |
Use Scenario: Securing Bluetooth antenna feed in compact true-wireless stereo earbuds where PCB space and RF sensitivity are severely constrained. IC Role / Device Role / Timing Role: First-line ESD defense on miniaturized 2.4 GHz antenna trace routed near touch-sensitive surfaces. Use Value: X2DFNW2 footprint (1.00 × 0.60 mm) fits tight layout constraints; 0.37 mm height avoids interference with battery or housing clearance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD7410MXWT5G | No SZ prefix; not AEC-Q101 qualified; same electrical specs and X2DFNW2 package | Lacks automotive qualification; suitable for consumer handset but not automotive-grade modules | Select SZESD7410MXWT5G when AEC-Q101 compliance and PPAP support are required |
| ESD7410N2T5G | Different package: X2DFN2 (non-wettable flank); identical electrical parameters except slightly higher thermal resistance (400 °C/W vs 300 °C/W) | Not AOI-compatible; less robust solder joint inspection capability in high-volume RF assembly | Choose SZESD7410MXWT5G where automated optical inspection and automotive traceability are mandatory |
Compared with ESD7410MXWT5G and ESD7410N2T5G, the SZESD7410MXWT5G uniquely combines AEC-Q101 qualification, wettable flank geometry for AOI, and identical ultra-low capacitance performance-making it the only option qualified for automotive active antenna systems requiring full process control and zero-defect manufacturing.
Availability
SZESD7410MXWT5G is available at Aetrix Electronics and suitable for RF antenna line protection, active antenna module safeguarding, NFC interface hardening, wireless earbud antenna shielding, and automotive telematics ESD mitigation requiring stable component supply across production lifecycles.
Supply support for SZESD7410MXWT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The ESD7410 family-including SZESD7410MXWT5G-is engineered for ultra-low capacitance RF ESD protection, targeting antenna feed lines and high-speed data interfaces where signal integrity and transient immunity must coexist.
FAQ
What is the primary function of the SZESD7410MXWT5G in an RF signal path?
The SZESD7410MXWT5G serves as a bi-directional shunt ESD protection diode placed directly on RF transmission lines-such as antenna feeds-to clamp transient voltages while introducing negligible capacitive loading. Its 0.35 pF capacitance at 1 GHz and 0.1 dB insertion loss ensure minimal impact on impedance matching and signal fidelity, making SZESD7410MXWT5G ideal for protecting LNAs and RF switches in 5G and Wi-Fi 6E front-ends.
Does the SZESD7410MXWT5G meet automotive qualification standards?
Yes, the SZESD7410MXWT5G is AEC-Q101 qualified and PPAP capable, with full test documentation supporting automotive deployment. Its qualification covers temperature cycling, humidity testing, and mechanical shock per AEC-Q101 Rev H, confirming suitability for antenna protection in infotainment, V2X, and ADAS modules-unlike non-SZ variants such as ESD7410MXWT5G.
How does the wettable flank feature of the SZESD7410MXWT5G improve manufacturing yield?
The wettable flank design of the SZESD7410MXWT5G exposes solderable metal along the side walls of the X2DFNW2 package, enabling automated optical inspection (AOI) systems to verify solder fillet formation and joint integrity. This eliminates reliance on X-ray for fine-pitch RF assemblies and reduces false call rates in high-volume production-directly enhancing first-pass yield for SZESD7410MXWT5G in smartphone and automotive module lines.
What is the clamping voltage performance of the SZESD7410MXWT5G under real-world ESD stress?
Under IEC 61000-4-2 8/20 µs waveform at 5.0 A peak pulse current, the SZESD7410MXWT5G clamps to 18.4–19.4 V-verified by oscilloscope capture of the full transient response. At ±8 kV contact discharge, clamping remains below 20 V, ensuring downstream components like GaAs pHEMT LNAs (typically rated to 22 V absolute max) remain within safe operating limits during ESD events.
Can the SZESD7410MXWT5G be used in both 50 Ω and 75 Ω RF systems?
Yes, the SZESD7410MXWT5G's ultra-low 0.35 pF capacitance at 1 GHz and symmetrical bi-directional structure make it compatible with both 50 Ω (e.g., cellular, Wi-Fi) and 75 Ω (e.g., broadcast TV tuner inputs) RF systems. Its insertion loss remains ≤0.3 dB up to 3 GHz, and its low dynamic resistance (≤1.0 Ω) ensures effective clamping without degrading VSWR-confirming broad applicability across SZESD7410MXWT5G deployments.
SZESD7410MXWT5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 2-XDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 8V (Max)
- Voltage - Breakdown (Min):
- 10V
- Voltage - Clamping (Max) @ Ipp:
- 20V (Typ)
- Current - Peak Pulse (10/1000µs):
- 16A
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- RF Antenna, Telecom
- Capacitance @ Frequency:
- 0.4pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- 2-X2DFNW (1x0.6)
SZESD7410MXWT5G FAQ
1.How can I place an order for SZESD7410MXWT5G through Aetrix?
Please submit a Request for Quotation (RFQ) for SZESD7410MXWT5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SZESD7410MXWT5G reliable?
The price and inventory of SZESD7410MXWT5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SZESD7410MXWT5G is usually 5 days.
3.What payment methods are accepted for SZESD7410MXWT5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SZESD7410MXWT5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SZESD7410MXWT5G?
SZESD7410MXWT5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SZESD7410MXWT5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SZESD7410MXWT5G?
For technical support, including SZESD7410MXWT5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SZESD7410MXWT5G requirements.
6.How does Aetrix verify that SZESD7410MXWT5G is sourced from the original manufacturer or authorized distributors?
All SZESD7410MXWT5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SZESD7410MXWT5G meets industry standards.
7.What is the process for return or replacement of SZESD7410MXWT5G?
All SZESD7410MXWT5G units undergo pre-shipment inspection (PSI). If there is an issue with SZESD7410MXWT5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SZESD7410MXWT5G part is unused and in its original packaging.
Return procedure for SZESD7410MXWT5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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